Abstract: A method and apparatus are described for logging an open hole well, or the like, for the purpose of determining the presence of a given constituent in the various substrata and for providing means and method for determining the degree of presence of the constituent in a given formation where it has been located. A probe capable of being lowered into a bore hole includes a color video camera, a particular form of light source, apparatus for carrying and issuing a spray of cleaning substance and apparatus for carrying and issuing a chemical which facilitates the analysis of the degree of presence of the constituent. The probe is lowered to the bottom of the bore hole and then raised to a desired level. A cleaning jet sprays the surface to be inspected. The cleaned surface is then illustrated with light having a frequency in a predetermined frequency range and the reflected light is directed to the camera. The video signal is conducted to the surface where it is displayed.

Abstract: Process of growing polysilicon on a plurality of deposition members grouped in a double ring, i.e., an outer circle surrounding an inner circle of members.

Abstract: In one embodiment of the present invention, silicon spheres are fabricated by applying a slurry of metallurgical grade silicon, or other suitable material, on the surface of a substrate capable of maintaining integrity beyond the melting point of silicon. The layer of metallurgical grade silicon is then patterned to provide regions of metallurgical grade silicon of uniform size. The substrate and metallurgical grade silicon are then heated beyond the melting point of silicon. The metallurgical grade silicon then beads to the surface as relatively pure silicon and forms silicon spheres due to the high cohesion of silicon. The structure is then cooled below the melting point of silicon and the silicon spheres then crystallize. The silicon spheres are then removed from the surface of the substrate and are further processed using techniques disclosed in copending U.S. patent application Ser. Nos. 647,551 and 647,578 to further purify the crystalline silicon spheres.

Abstract: An IC wafer with a uniform distribution of impurities is obtained by a pretreatment comprising annealing a semiconductor substrate at a high temperature for a long period of time and then cooling rapidly before IC processing.

Abstract: Single crystal during growth is irradiated by an slitted X-ray beam and the diffracted X-ray beam from the crystal is monitored by an image amplifier with a two dimensional manner so that the diffracted X-ray can be monitored by the image amplifier even if there occurs change of the diameter of the crystal. A half portion of the single crystal during growth is irradiated by a slitted X-ray beam and the other half portion of the crystal is irradiated by the X-ray beam over the entire height of the crystal so that the Laue spots of the crystal growth is displayed on one half portion of the display of the image amplifier and a shape of the crystal being pulled up is monitored in another half portion of the display of the image amplifier.

Abstract: A process for producing a single crystal alloy object comprising providing a preform having coarse columnar crystals in a discard portion, isolating, by cutting, one of the columnar crystals to form a seed crystal connected to metal in a product portion of said preform, zone annealing the thus prepared preform to produce single crystal structure and discarding the discard portion of the preform.

Abstract: A substrate is coated with a film to be recrystallized. A pattern of crystallization barriers is created in the film, for example, by etching voids in the film. An encapsulation layer is generally applied to protect the film, fill the voids and otherwise enhance a recrystallization process. Recrystallization is carried out such that certain orientations pass preferentially through the barrier, generally as a result of growth-velocity anisotropy. The result is a film of a specific predetermined crystallographic orientation, a range of orientations or a set of discrete orientations.

Abstract: A method of growing an InGaAsP layer on a corrugated InP substrate as a part of a procedure for producing a DFB semiconductor laser includes the step of heating the substrate up to temperatures approaching 700.degree. C. while holding the substrate in an atmosphere which contains arsine and phosphine. The substrate is subsequently moved to InGaAsP and InP growth chambers for growth of these respective layers. The method of the invention is advantageous in that the corrugated structure of the substrate is maintained intact throughout the procedure.

Abstract: In the representative embodiment of the invention described in the specification, a boron coating is applied to a semiconductor body having a protective film of a compound of the semiconductor material by heating the semiconductor body to a temperature below 400.degree. C. in a vacuum chamber, introducing diborane gas into the chamber and causing a glow discharge between two electrodes in the chamber.

Abstract: A method and apparatus for stabilizing the edge positions of a ribbon drawn from a melt includes the use of wettable strings drawn in parallel up through the melt surface, the ribbon being grown between the strings. A furnace and various features of the crucible used therein permit continuous automatic growth of flat ribbons without close temperature control or the need for visual inspection.

Abstract: The constituent members of a semiconductor element-manufacturing apparatus which are formed by depositing a silicon carbide layer on a carbon substrate, and wherein a peak X-ray diffraction on the (200) plane of the silicon carbide layer has a half value width of 0.35.degree. or less as measured by the C.sub.u --K.sub..alpha. ray used in the X-ray diffraction analysis.

Abstract: The specification discloses a low temperature process for depositing an epitaxial layer of a selected oxide or a selected sulfide material on a chosen substrate. The substrate is exposed to a chosen vapor phase reactant in the presence of neutral, charge-free oxygen atoms or sulfur atoms to produce a reaction between the atomic species and the vapor phase reactant to form the desired oxide or sulfide and induce the crystalline growth thereof as an epitaxial layer on the surface of the substrate. The atomic oxygen or the atomic sulfur is formed at a low temperature by the photochemical dissociation of a selected oxygen-containing precursor or a selected sulfur-containing precursor, respectively.

Abstract: The process involves producing a monocrystal from the ferroelectric compound, annealing the monocrystal and cooling the latter in a zero longitudinal temperature gradient. The apparatus comprises means for producing the monocrystal and heating means for annealing the monocrystal in a zero temperature gradient, as well as for cooling the monocrystal in a zero longitudinal temperature gradient after annealing. The strain-free monocrystals may be used in the production of surface wave filters, modulators and optical amplifiers.

Abstract: An apparatus for solidification comprising a container for a liquid material which is to be solidified and an electric heater around the container and energized to melt the liquid material, a pair of magnets beside the container producing a stationary magnetic field, a source of electricity to supply substantially DC current to said heater and means for pulling a solid crystal from said liquid material.

Abstract: A method of selective area epitaxial growth using a scanning ion beam is described.

Abstract: A reactor for use in chemical or physical vapor transport film or crystal growth experiments includes a composite reaction tube which is comprised of an open stainless steel tube which is fused to a closed glass tube. The stainless steel portion of the reaction tube supplies mechanical strength and rigidity for sealing purposes while the glass portion of the composite tube permits visual observation of crystal growth within the composite tube.

Abstract: In the liquid phase epitaxy growth of Group III-V compound semiconductors using boat-slider apparatus, melt-carry-over is essentially eliminated by prebaking the metallic solvent (e.g., In shot) in the boat to form ingots and then etching the ingots in dilute nitric or hydrochloric acid prior to adding solutes (e.g., GaAs, InP, dopants). This process removes contaminants which coalesce on the ingots and cause poor wipe-off.

Abstract: A process and system for making semiconductor alloys and members with high reaction gas conversion efficiencies and at high deposition rates utilizes microwave energy to form a deposition plasma. The microwave energy forms depositing species and molecular ions of a semiconductor element and the potential of the plasma is controlled to alter the ion bombardment of the depositing species.The process and system include coupling microwave energy into a substantially enclosed reaction vessel containing a substrate and depositing semiconductor alloys onto the substrate from a reaction gas introduced into the vessel. The semiconductor alloys are particularly suited for relatively thick photoconductive members. The photoconductive member includes at least a bottom blocking layer and a photoconductive layer. The photoconductive member can be formed in a negative or positive charge type configuration. The members also can include a top blocking enhancement layer.

Abstract: A process for solidification of fluid such as silicon melt and so on is disclosed. In this case, liquid material having electrical conductivity is in a container and a unidirectional stationary magnetic field is applied to the liquid material. Thus, the dissolution of at least one elemental material of the container into the liquid material is conducted by diffusion thereof.

Abstract: A crystal growing furnace has lift and rotation control apparatus for both a growing crystal and a crucible containing a melt. A transducer and a servo motor are disposed above the furnace having respective shafts connected along a common horizontal axis on opposite sides of a longitudinal light tube wherein the light tube and transducer shaft can be axially positioned by the shaft of the servo motor. The light tube has a lens for focusing at times on a spot on a meniscus in the furnace and at times on the melt, a light sense detector is connected to the light tube for at times generating a servo motor control error signal to drive the servo motor incrementally to an angular position corresponding to growth in the diameter of the meniscus by tracking a spot on the meniscus. The transducer generates an output signal indicative of incremental angular movement in response to growing the crystal for governing the lift and rotation control apparatus.