Abstract: A method of producing a semiconductor device comprising a semiconductor substrate exhibiting defect density of 10.sup.5 /cm.sup.2 or more when the central portion of the substrate is observed through an optical microscope after the substrate is heat-treated at 1,050.degree. C. for 18 hours and etched along a section thereof across the thickness thereof.

Abstract: A process and apparatus for simultaneous feedstock material granulation and classification are provided which utilize applied heat to cause feedstock material to agglomerate, forming a uniformly sized granular product. The feedstock is fed onto a tilted rotating granulator-classifier, forming a moving bed of feedstock. Hot streams of combustion products or other heated gases are applied to a portion of the granulator-classifier and heat is thus percolated through the moving bed of feedstock. The feedstock is heated to a point wherein it begins to soften, or sinter. As the heated particles cascade downward over the granulator-classifier, the smaller particles adhere to the larger particles forming hardened, uniform granules which spill out of the granulator-classifier when they reach a desired size. The granulator-classifier may be provided with annular tiers which cause an increased efficiency in the uniform sizing of the granules as well as the agglomeration process.

Abstract: Process for producing ternary or quaternary semiconductor compounds, particularly of formula Cd Hg Te or Cd Hg Te Se.It comprises the following stages:forming a homogeneous mixture having a precise composition and corresponding to the compound to be obtained, of Cd Te and Hg Te powders in the case of the ternary compound Cd Hg Te and Cd Te Se and Hg Te or Cd Te and Hg Te Se powders in the case of the quaternary compound Cd Hg Te Se;the mixture is compacted by applying a pressure;the thus compacted mixture undergoes thermal interdiffusion treatment;the recrystallization of the compound in monocrystalline form takes place by a single passage through the solvent zone.

Abstract: A method for producing a large area of single domain magnetic bistability is shown including the steps of selecting the properties of films of magnetic materials such that the saturation field (H.sub.s) that is less than the value of the anisotropy field (H.sub.k) reduced by the value of a demagnetization factor (4.pi.) times the magnetization value (M.sub.s) as stated in the equation:H.sub.s <H.sub.k -4.pi.M.sub.s.Isolated areas are created in these films by means which do not introduce changes in the magnetic properties, such as stress anisotropy effects. Large area stable domains exist in material whose measured magnetic properties meet this relationship independent of temperature and without a requirement for a magnetic bias.

Abstract: A method of fabricating a polycrystalline silicon wafer, which method includes the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray. The wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold.

Abstract: A process for the production of columnarly grown blocks of silicon containing coarsely crystalline regions comprising cooling a silicon melt in a mold, selectively effecting solidification at the melt surface and advancing the solidification front downwardly. The blocks can be sawed into chips, useful for solar cells.

Abstract: A method of manufacturing a semiconductor device which comprises the step of applying a silicon carbide film having a prescribed perforated pattern as a masking film selectively to etch a silicon dioxide film or diffuse an impurity into a substrate.

Abstract: A method of two dimensional chemical flood testing includes evacuating a porous medium contained in a test cell. The porous medium in the test cell is irradiated with a beam of microwave energy at a plurality of predetermined locations on said test cell. The microwave energy that has passed through the porous medium at each location is detected at the location. The porous medium in the test cell is filled with brine. The irradiating and detecting steps are repeated, the porous medium is then flooded with crude oil, or a substitute, and again the irradiating and detecting steps are repeated. The porous medium is flooded with brine and again the irradiating and detecting steps are repeated. A calibration curve for each location is derived from the detected microwave energy at the location from the prior irradiating and detecting steps.

Abstract: Large single crystals of berlinite are grown onto seed crystals by maintaining the crystals at a fixed elevated temperature in a pressure vessel containing a nutrient of coarse berlinite crystalline powder, held at a fixed lower temperature, and concentrated phosphoric acid. Because berlinite shows retrograde solubility, the nutrient goes into solution, and berlinite deposits on the higher-temperature growing crystal. The vessel is rocked to promote motion of saturated solution to the crystal and depleted solution to the nutrient. Large single crystals of alpha-gallium orthophosphate may be grown using the same apparatus and a similar process. The resultant crystals may be cut into wafers useful in surface acoustic wave devices.

Abstract: For recrystallizing a layer of polysilicon extending over a layer of silicon dioxide on a substrate of silicon single crystal, the silicon dioxide layer is interrupted at seeding locations which are spaced apart in at least one direction and at which the polysilicon layer comes into contact with the substrate, a beam of charged particles is impacted and focused on the polysilicon layer, the substrate and beam are relatively displaced so that the beam of charged particles scans at least a portion of the polysilicon layer in the direction in which the seeding locations are spaced apart, the speed with which the beam relatively scans the polysilicon layer is determined so that the polysilicon layer is subjected to zone melting at the area of impact thereon for growing silicon single crystals by lateral epitaxial recrystallization of the polysilicon from the seeding locations, and charge buildup on the layer of silicon dioxide is avoided to prevent interference with focusing of the beam.

Abstract: A method for forming a layer of monocrystalline diamond cubic material on a mask comprises initially providing a substrate having a monocrystalline surface which is parallel to a {100}-type crystallographic plane. A mask is then formed on the substrate, the mask including at least two apertures and each aperture including an edge which is oriented between 8.degree. and 14.degree. from a particular <001> direction on the surface. The aperture edges are mutually parallel and in mutual opposition and the mask apertures each expose a monocrystalline surface portion of the substrate. The diamond cubic material is then epitaxially grown through the apertures and over the mask so as to form a monocrystalline layer of substantially uniform quality overlying the mask between the edges of the apertures.

Abstract: A melt recharge method is disclosed which uses a self-actuated charge container open at one end except for deformable support members which are positioned to support the charge material. The support members are formed of a material which has sufficient rigidity at room temperature to support the charge material but which when heated above its annealing temperature loses its rigidity and can no longer support the charge material which therefore falls into the existing melt. Upon cooling, the support members regain their rigidity and can be reformed for reuse.

Abstract: This invention involves a method and apparatus for drawing crystalline bodies from a melt by means of an open-ended drawing nozzle which determines the cross-sectional geometry of the crystalline body. The drawing nozzle is composed of a material which is resistant to the melt. The feed of melt proceeds from a reservoir situated at the lower end of the drawing nozzle and the melt is conveyed to the upper opening thereof by capillary action. In keeping with the present invention, there is provided a drawing nozzle which has an upper opening merging into a contoured surface such that the meniscus formed at the interface between the crystalline and molten phases is freely displaceable on the contoured surface into which the upper opening discharges.

Abstract: An apparatus and method are described for incorporating doping material into a single silicon crystal by an improved float zone (FZ) crystal growth method. A solid fused silica doping rod is inserted into a floating zone of molten silicon in a controlled manner, preferably via a generally radial hole through a radio-frequency induction coil. Oxygen doping, in a concentration of 1-25 ppm, is achieved by using a fused silica doping rod. N- or p-type dopants may be contained in the silica rod as impurities to provide n- or p-type doping concurrently with the oxygen doping.

Abstract: The present invention relates to a chromatographic apparatus for analyzing a sample of an aqueous solution containing a plurality of micro-concentration components. In the apparatus an aqueous solution sample and an eluting solution are introduced into a separating column having a length of 20 to 90 mm, which is filled with a predetermined separating carrier and placed in a thermostatic oven which also contains a detecting cell connected to the separating column, by means of a constant flow, pulse free feeding pump.

Abstract: Circulating water for a power plant contains clams and other particles that would clog condensor tubes. Four filter units have inlets and outlets connected in parallel to a lake and the power plant, respectively. The parallel connection permits isolation of one unit for servicing while the remaining units filter the circulating water. A selected unit is isolated by blocking the inlet and outlet. A drain is opened, and backwash water is pumped to sprayers in the selected unit. Nozzles on the sprayers direct water at filter screens in the unit to wash clams and other particles collected on the screens to the drain for disposal. While the unit is thus isolated, workmen may open manholes and enter the unit interior for maintenance. The selected unit is placed online by partially opening the unit inlet to fill the unit and purge air through the open vent. When the unit is full, the vent is closed, and the inlet and outlet are fully opened.

Abstract: Berlinite crystalline powder of uniform particle size and high purity is prepared by repeated thermal cycling to react a mixture of aluminum hydroxide or aluminum oxide and an excess of concentrated phosphoric acid in a sealed pressure vessel. The vessel is preferably held in a horizontal orientation and rotated about a longitudinal axis during the reaction. The product powder is useful in growing large single crystals that have surface acoustic wave applications. Crystalline powder of alpha-gallium orthophosphate may be prepared using the same apparatus and a similar procedure.

Abstract: A method of removing refractory material from a component comprises contacting the refractory material with a chemically active agent whereby to convert the refractory material to a more easily removable substance, and removing the more easily removable substance. The method enables alumina cores defining cooling passages in cast blades for use in gas turbine engines to be removed at practically useful rates.

Abstract: A method of producing globulous products of a subliming substance, which includes the steps of melting the subliming substance, discharging the subliming substance through a nozzle so as to form a plurality of droplets of 0.3 to 5 mm diameter, discharging a non-soluble inert coolant liquid having a boiling point lower than the subliming substance and atomized to a size of 10 to 2500.mu. so as to contact and cool the droplets, and forming the globulous products so as to have a diameter of 0.3 to 5 mm.

Abstract: The invention relates to a method and an apparatus for the mass separation of a liquid mixture through fractional crystallization, wherein the crystal layer is crystallized on the indirectly cooled wall of the crystallization zone. The mass transfer occurs in thin boundary layers which are produced by rising gas bubbles which glide as closely as possible along the heat-dissipating surfaces. The method is well suited for products which form only a soft crystal layer with a rough surface. It is carried out in a vertical pipe heat exchanger into the pipes of which (6) there extend into the lower part thereof gas-inlet pipes (7) which are mounted in the middle and are secured with centering pins (8). The maximum inside diameter of the pipes is dependent upon the optimum thickness of the crystal layer and of the concentration of the crystallizable component in the feedstock.