Abstract: An immersion-type exposure apparatus includes a measurement area for measuring a substrate, an exposure area, which differs from the measurement area, for exposing the substrate via a projection optical system, plural stages configured to hold the substrate and to be movable between the exposure area and the measurement area, and a controller configured to control the driving of the plural stages, wherein in a case that one stage of the plural stage is positioned in the exposure area, and immersion liquid that is supplied onto the one stage is retained in exposure area and delivered to another stage, the controller is configured to determine a delivery position of the immersion liquid for the other stage based on at least a first processing position of the other stage.

Abstract: Provided is a lithography apparatus that includes a plurality of patterning devices each of which is configured to perform patterning for a substrate supplied from a preprocessing apparatus; and a controller configured to control the plurality of patterning devices such that a plurality of substrates respectively belonging to a plurality of lots is subjected to parallel processings by the plurality of patterning devices based on a plurality of recipe information respectively corresponding to the plurality of lots, and transmit information regarding a schedule of the parallel processings to the preprocessing apparatus.

Abstract: A liquid supply system for an immersion lithographic apparatus provides a laminar flow of immersion liquid between a final element of the projection system and a substrate. A control system minimizes the chances of overflowing and an extractor includes an array of outlets configured to minimize vibrations.

Abstract: A system and method are provided for determining deformation of a patterning device and/or shift position of the patterning device relative. The system includes a first sensing sub-system that measures respective positions of a plurality of reference marks on the patterning device, and a second sensing sub-system that measures positions of the edge of the patterning device relative to the support. The system further includes a controller to determine an absolute position of the patterned portion and change in the absolute position based on measured respective positions of marks on the patterning device, determine a change in a relative position of the edge of the patterned device based on the measured edge positions, and estimate a change in a position of the patterning device relative to the support and a change in a pattern distortion of the patterned portion of the patterning device over a time period.

Abstract: A lithographic apparatus includes a reflector to redirect a radiation beam, e.g. an EUV beam. The position of the reflector is controlled using a controller and a positioning system. The positioning system includes a non-compensating actuator device and a compensating actuator device to compensate for parasitic forces of the non-compensating actuator device. The positioning system and controller can provide a more accurate position of the reflector, reduce deformation of the reflector and reduce the magnitude of forces transmitting through the reflector.

Abstract: An illumination optical apparatus has an optical unit. The optical unit has a light splitter to split an incident beam into two beams; a first spatial light modulator which can be arranged in an optical path of a first beam; a second spatial light modulator which can be arranged in an optical path of a second beam; and a light combiner which combines a beam having passed via the first spatial light modulator, with a beam having passed via the second spatial light modulator; each of the first spatial light modulator and the second spatial light modulator has a plurality of optical elements arranged two-dimensionally and controlled individually.

Abstract: An optical component includes at least one micro-opto-electro-mechanical system (MOEMS) with a front side and a rear side. The optical component also includes at least one printed circuit board arranged on the rear side of the at least one MOEMS. The at least one printed circuit board has lateral contacts. The at least one printed circuit board may be equipped with electronic parts and cooling elements. The at least one MOEMS projects laterally beyond the at least one printed circuit board.

Abstract: A method for displacing an optical component is disclosed, in which the electrical power maximally required when displacing the component is less than the sum of the maximum electrical powers of the at least two actuators used for the displacement.

Abstract: A lithographic apparatus with a cover plate formed separately from a substrate table and means for stabilizing a temperature of the substrate table by controlling the temperature of the cover plate is disclosed. A lithographic apparatus with thermal insulation provided between a cover plate and a substrate table so that the cover plate acts as a thermal shield for the substrate table is disclosed. A lithographic apparatus comprising means to determine a substrate table distortion and improve position control of a substrate by reference to the substrate table distortion is disclosed.

Abstract: A projection exposure apparatus for microlithography includes a projection lens which includes a plurality of optical elements for imaging mask structures onto a substrate during an exposure process. The projection exposure apparatus also includes at least one manipulator configured to change, as part of a manipulator actuation, the optical effects of at least one of the optical elements within the projection lens by changing a state variable of the optical element along a predetermined travel. The projection exposure apparatus further includes an algorithm generator configured to generate a travel generating optimization algorithm, adapted to at least one predetermined imaging parameter, on the basis of the at least one predetermined imaging parameter.

Abstract: An apparatus and method are used to form patterns on a substrate. The apparatus comprises a projection system, a patterning device, a low-pass filter, and a data manipulation device. The projection system projects a beam of radiation onto the substrate as an array of sub-beams. The patterning device modulates the sub-beams to substantially produce a requested dose pattern on the substrate. The low-pass filter operates on pattern data derived from the requested dose pattern in order to form a frequency-clipped target dose pattern that comprises only spatial frequency components below a selected threshold frequency. The data manipulation device produces a control signal comprising spot exposure intensities to be produced by the patterning device, based on a direct algebraic least-squares fit of the spot exposure intensities to the frequency-clipped target dose pattern. In various examples, filters can also be used.

Abstract: A method is provided that comprises printing FEM wafers having different predefined focus offsets and multiple corresponding sites, measuring signals from the sites, and quantifying a focus inaccuracy by comparing the measured signals from the corresponding sites across the wafers.

Abstract: A lithographic apparatus includes a first table to support a substrate; a second table, not being configured to support a substrate, including a sensor unit to sense a property of a patterned beam of radiation from a projection system, the second table to move under the projection system when the first table is moved out from under the projection system during a substrate exchange, the first and second tables being independently movable from each other; and a liquid supply system to supply a liquid to a space between the projection system and the substrate, the first table, and/or the second table, wherein the second table is configured to provide a confining surface at a bottom of a liquid confinement structure when the first table is removed from under the projection system so as to prevent the liquid from leaking out into the remainder of the lithographic apparatus.

Abstract: A method includes producing a pulsed light beam; directing the pulsed light beam toward a substrate mounted to a stage of a lithography exposure apparatus; scanning a pulsed light beam and the substrate relative to each other, including projecting the pulsed light beam onto each sub-area of the substrate and moving one or more of the pulsed light beam and the substrate relative to each other; determining a value of a vibration of the stage for each sub-area of a substrate; for each sub-area of the substrate, determining an amount of adjustment to a bandwidth of the pulsed light beam, the adjustment amount compensating for a variation in the stage vibration so as to maintain a focus blur within a predetermined range of values across the substrate; and changing the bandwidth of the pulsed light beam by the determined adjustment amount to thereby compensate for the stage vibration variations.

Abstract: This conveying hand is used for conveying a conveyed object in an adsorbed state with a negative pressure, and comprises a pad having a contact portion that contacts the conveyed object and a concave portion having an internal space that can be evacuated; a base that moves while loading the pad; a first elastic member that movably supports the pad on the base in the direction of gravity of the conveyed object and restricts a movement of the pad on the base in the direction perpendicular to the direction of gravity; and a second elastic member that seals a space communicating with the internal space of the concave portion and movably supports the pad on the base in the direction of gravity.

Abstract: A continuous flow projection lithography system to form microstructures using an optical array incorporated in a continuous coating process is provided. A mask is placed at a distance from the array. Each element of the array projects one image of the mask onto a substrate, effectively forming an array thereon. A coating process allows flows that can be used to define functional regions of particles or supporting layers that prevent adhesion of crosslinked polymers to surfaces.

Abstract: A system for coupling a mask to a mask holder. The system includes a base, an aperture; mask holder cover supporting elements arranged to move between a first position and a third position while supporting the mask holder cover; mask supporting elements arranged to move between a fourth position and a sixth position while supporting the mask; mask holder base supporting elements arranged to support the mask holder base. When the mask holder cover supporting elements are at the first position and the mask supporting elements are at the third position the mask holder cover, the mask and the base are spaced apart from each other. When the mask holder cover supporting elements are at the third position and the mask supporting elements are at the sixth position the mask holder cover, the mask and the base are connected to each other.

Abstract: A facet mirror, such as for use as an optical component in a projection exposure apparatus for EUV microlithography, includes at least two mirror modules having individual mirrors and mirror module surfaces and at least on one side a non-reflective edge region and a module edge. Adjacent individual mirrors in the mirror modules are a distance from each other that is less than half the width of the non-reflective edge region. The at least two adjacent module edges of adjacent mirror modules are offset with respect to each other by a height h along the surface normal of one of the two mirror module surfaces.

Abstract: Systems and methods for monitoring the focus of an EUV lithography system are disclosed. Another aspect includes a method having operations of measuring a first shift value for a first patterned set of sub-structures of a focus test structure on a wafer and measuring a second shift value for a second patterned set of sub-structures of the test structure on the wafer. The test structure may be formed on the wafer using asymmetric illumination, with the first patterned set of sub-structures having a first pitch and the second patterned set of sub-structures having a second pitch that is different from the first pitch. The method may further include determining a focus shift compensation for an illumination system based on a difference between the first shift value and the second shift value.

Abstract: A product structure (407, 330?) is formed with defects (360-366). A spot (S) of EUV radiation which is at least partially coherent is provided on the product structure (604) to capture at least one diffraction pattern (606) formed by the radiation after scattering by the product structure. Reference data (612) describes a nominal product structure. At least one synthetic image (616) of the product structure is calculated from the captured image data. Data from the synthetic image is compared with the reference data to identify defects (660-666) in the product structure. In one embodiment, a plurality of diffraction patterns are obtained using a series overlapping spots (S(1)-S(N)), and the synthetic image is calculated using the diffraction patterns and knowledge of the relative displacement. The EUV radiation may have wavelengths in the range 5 to 50 nm, close to dimensions of the structures of interest.