Abstract: An apparatus comprises a piezoelectric element and a mechanical energy storage unit. The mechanical energy storage unit can be configured to receive a force and store the force as stored mechanical energy. The apparatus further comprises a mass configured to receive the stored mechanical energy from the mechanical energy storage unit when the stored mechanical energy is released, move with a velocity as a result of receiving the stored mechanical energy, and deform the piezoelectric element based on the velocity of the mass.

Abstract: Provided is a piezoelectric laminate element that outputs a fixed output voltage even in response to a static load for which an output voltage could not be obtained using a conventional piezoelectric element. A piezoelectric laminate body in which a plurality of piezoelectric polymer film layers consisting of film such as polylactic acid film that exhibits piezoelectricity in the planar direction are laminated is used as a piezoelectric laminate element. The piezoelectric laminate body is given a cylindrical shape, rounded rectangle shape, or other partially curved shape. The output voltage follows the increase and decrease of the applied load, and if a fixed load is continuously applied, a fixed output voltage is continuously output, and a piezoelectric laminate element is obtained that outputs a fixed output voltage even if a load is static.

Abstract: According to one embodiment, a sensor module includes at least one sensor and at least one switch. The sensor includes a first piezoelectric element. The first piezoelectric element includes a first electrode. The first piezoelectric element is set with a resonance frequency to resonate at a vibration frequency of a detection target. The switch includes a second piezoelectric element. The second piezoelectric element includes a second electrode connected to the first electrode and a third electrode electrically separated from the second electrode.

Abstract: In a crystal resonator plate (2), a support part (24) extends from only one corner part positioned in the +X direction and in the ?Z? direction of a vibrating part (22) to an external frame part (23) in the ?Z? direction. The vibrating part (22) and at least part of the support part (24) form an etching region (Eg) having a thickness thinner than a thickness of the external frame part (23). A stepped part is formed at a boundary of the etching region (Eg), and a first lead-out wiring (223) is formed over the support part (24) to the external frame part (23) so as to overlap with the stepped part. At least part of the stepped part that is superimposed on the first lead-out wiring (223) is formed so as not to be parallel to the X axis in plan view.

Abstract: A piezoelectric thin film device 10 includes a conductive layer 4 and a piezoelectric thin film 2 laminated directly on a surface of the conductive layer 4. The piezoelectric thin film 2 contains a plurality of crystalline grains having a wurtzite structure, a (001) plane of at least a part of the crystalline grains is oriented in a normal direction DN of the surface of the conductive layer 4, and a median diameter of the plurality of crystalline grains in a direction parallel to the surface of the conductive layer 4 is 30 nm or more and 80 nm or less.

Abstract: Provided is an apparatus comprising a conductive particle interconnect (CPI) and an electroactive polymer (EAP) structure. The CPI includes an elastomeric carrier and a plurality of conductive particles dispersed therein. The EAP structure is disposed around at least a portion of the CPI. The EAP structure is configured to move between a first position and a second position in response to an electrical field. The CPI is configured to exhibit a first electrical resistance when the EAP structure is in the first position and a second, different electrical resistance when the EAP structure is in the second position.

Abstract: A structure includes a substrate including a wafer or a portion thereof; and a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the second portion comprising an outer surface having a surface roughness (Ra) of 4.5 nm or less. Methods for depositing a piezoelectric bulk material layer include depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.

Abstract: A vibrator device including a vibrator element, an IC substrate including a semiconductor substrate configured of a semiconductor having a first conductive type and a circuit electrically coupled to the vibrator element, the first conductive type being any one of an N-type and a P-type, and a lid directly bonded to the semiconductor substrate and configured of a semiconductor having the first conductive type.

Abstract: An elastic wave device includes a piezoelectric substrate including first and second primary surfaces opposing one another, a via electrode extending through the piezoelectric substrate, and a wiring electrode on the first primary surface of the piezoelectric substrate. The via electrode is connected at one end to the wiring electrode, and the via electrode includes a locking section at the one end, on the wiring electrode side. The locking section extends on the first primary surface of the piezoelectric substrate.

Abstract: A multi-layer piezoelectric ceramic component includes: a piezoelectric ceramic body having a cuboid shape, having upper and lower surfaces facing in a thickness direction, first and second end surfaces facing in a length direction, and a pair of side surfaces facing in a width direction, and including first and second regions; first internal electrodes in the first region; second internal electrodes in the second region; third internal electrodes in the first and second regions; a first terminal electrode formed on the first end surface and electrically connected to the first internal electrodes; a second terminal electrode formed on the first end surface and electrically connected to the second internal electrodes; a third terminal electrode formed on the second end surface and electrically connected to the third internal electrodes; a first surface electrode formed on the upper surface; and a second surface electrode formed on the lower surface.

Abstract: A bulk acoustic wave resonator is disclosed. The bulk acoustic wave resonator can include a ceramic substrate, and a piezoelectric layer on the ceramic substrate. The bulk acoustic wave resonator can also include first and second electrodes positioned on opposing sides of the piezoelectric layer. The bulk acoustic wave resonator can also include passivation layers that includes a first passivation layer and a second passivation layer. The first passivation layer can be positioned between the ceramic substrate and the first electrode. The second electrode can be positioned between the piezoelectric layer and the second passivation layer. The bulk acoustic wave resonator can further include a frame structure along an edge of an active region of the bulk acoustic wave resonator.

Abstract: A hybrid ferroelectric/non-ferroelectric piezoelectric microresonator is disclosed. The hybrid microresonator uses a ferroelectric layer as the actuator as ferroelectric materials typically have higher actuation coefficients than non-ferroelectric piezoelectric materials. The hybrid microresonator uses a non-ferroelectric piezoelectric layer as the sensor layer as non-ferroelectric piezoelectric materials typically have higher sensing coefficients than ferroelectric materials. This hybrid microresonator design allows the independent optimization of actuator and sensor materials. This hybrid microresonator design may be used for bulk acoustic wave contour mode resonators, bulk acoustic wave solidly mounted resonators, free-standing bulk acoustic resonators, and piezoelectric transformers.

Abstract: An oriented piezoelectric film comprises perovskite type crystals expressed by formula (1) shown below: (1?x)NaNbO3-xBaTiO3 (0.01?x?0.40)??(1) and (111) oriented in pseudocubic crystal notation.

Abstract: A vibration energy harvester includes: a fixed electrode unit having a plurality of comb-tooth electrodes; a movable electrode unit having a plurality of comb-tooth electrodes; a weight fixed to the movable electrode unit; and an adjusting weight mounting structure capable of mounting an adjusting weight for additionally adjusting a mass of the weight.

Abstract: A piezoelectric sensor comprising an insulator layer having opposing upper and lower surfaces, a first piezoelectric portion having a lower surface in contact with the upper surface of the insulator layer, a second piezoelectric portion having a lower surface in contact with the upper surface of the insulator layer and an insulator strip dividing the first and second piezoelectric portions, wherein the first portion and second piezoelectric portion are laterally positioned with respect to one another in the same generally planar layer.

Abstract: There is provided a piezoelectric laminate, including: a substrate; and a piezoelectric film formed on the substrate, wherein the piezoelectric film is a film containing an alkali niobium oxide of a perovskite structure represented by a composition formula of (K1-xNax)NbO3 (0<x<1), and having Young's modulus of less than 100 GPa.

Abstract: An elastic wave device includes a spacer layer on or above a support substrate and outside a piezoelectric film as seen in a plan view from a thickness direction of the support substrate. A cover layer is disposed on the spacer layer. A through electrode extends through the spacer layer and the cover layer and is electrically connected to the wiring electrode. The wiring electrode includes a first section overlapping the through electrode as seen in the plan view from the thickness direction, a second section overlapping the piezoelectric film as seen in the plan view from the thickness direction, and a step portion defining a step in the thickness direction between the first section and the second section. The spacer layer includes an end portion embedded in the cover layer.

Abstract: A multi-layer piezoelectric ceramic component includes: a piezoelectric ceramic body having a cuboid shape having upper and lower surfaces facing in a thickness direction, first and second end surfaces facing in a length direction, and a pair of side surfaces facing in a width direction; first internal electrodes formed in the piezoelectric ceramic body and drawn to the first end surface; second internal electrodes formed in the piezoelectric ceramic body and drawn to the second end surface; a first terminal electrode formed on the first end surface; and a second terminal electrode formed on the second end surface, the first and second internal electrodes each having a width equal to a distance between the pair of side surfaces, at least one of the pair of side surfaces including a groove extending in non-parallel with the length direction.

Abstract: An energy harvester includes a pendular unit subjected with a piezoelectric beam coupled to an inertial mass. On the clamped side of the beam, a beam frame includes two pressing elements between which the beam is taken in sandwich, each including i) an intermediate part, an internal face of which presses on a corresponding face of the beam, and ii) a pressure plate, an internal face of which presses on an external face of the intermediate part, a printed circuit board being interposed between them. The intermediate parts and the pressure plates are passed through by at least one common transverse bore receiving a locking pin. The intermediate parts, the pressure plates and the pin are each massive metal parts ensuring a direct electrical and mechanical contact with the electrodes of the beam and with the printed circuit boards.

Abstract: A nanomechanical magnetoelectric antenna includes a thin film heterostructure that has a magnetic element and a piezoelectric element. The heterostructure is suspended on a substrate and is capable of resonating at acoustic resonance frequencies. In the transmission mode of the antenna, oscillating mechanical strain produced by voltage-induced acoustic waves is transferred to the thin film heterostructure through strain mediated magnetoelectric coupling. This gives rise to magnetization oscillation or magnetic current that radiates electromagnetic waves at the acoustic resonance frequencies. In the receiving mode, the heterostructure senses magnetic components of electromagnetic waves arriving at the antenna, converting these into a piezoelectric voltage output.