Abstract: Thin films of lithium-containing materials and methods for fabricating them are generally described. In some embodiments, the formation of a first vapor is induced from a first target and the formation of a second vapor is induced from a second target, resulting in the formation of a thin film. In some embodiments, at least a portion of the formation of the first vapor and the formation of the second vapor occurs under vacuum conditions. In some embodiments, the thin film has a relatively high ionic conductivity, mixed ionic/electronic conductivity, or other properties beneficial for applications such as active electrode materials or solid-state electrolytes.

Abstract: Provided is a sputtering apparatus which is capable of suppressing a local temperature rise at an outer peripheral part of a to-be-processed substrate. The sputtering apparatus SM has: a vacuum chamber in which a target and the to-be-processed substrate Sw are disposed face-to-face with each other; a shield plate for enclosing a film forming space between the target and the to-be-processed substrate; and a cooling unit for cooling the shield plate. The shield plate has a first shield plate part which is disposed around the to-be-processed substrate and which has a first opening equivalent in contour to the to-be-processed substrate. The cooling unit includes a first coolant passage which is disposed in the first shield plate part and which has a passage portion extending all the way to the first shield plate part positioned around the first opening.

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets.

Abstract: Systems, methods, and devices are described herein for identifying, monitoring, isolating, or selecting a cell having a predefined characteristic in a mixed population of cells utilizing a combination of any one or more of iDEP, a region of localized field enhancement, a variable frequency electric field, a wide bandwidth amplifier, and/or an imaging apparatus.

Abstract: Aspects of the subject disclosure may include, for example, a method in which a selection is made for a first major constituent, a second major constituent and a minor constituent for forming a desired material. The method can include mixing the first major constituent, the second major constituent and the minor constituent in a single mixing step to provide a mixture of constituents. The method can include drying the mixture of constituents to provide a dried mixture of constituents and calcining the dried mixture of constituents to provide a calcinated mixture of constituents. The method can include processing the calcinated mixture of constituents (by a process including vacuum annealing and hot-pressing) to provide a sputtering target. Other embodiments are disclosed.

Abstract: Cathode structures are disclosed for use with pulsed cathodic arc deposition systems for forming diamond-like carbon (DLC) films on devices, such as on the sliders of hard disk drives. In illustrative examples, a base layer composed of an electrically- and thermally-conducting material is provided between the ceramic substrate of the cathode and a graphitic paint outer coating, where the base layer is a silver-filled coating that adheres to the ceramic rod and the graphitic paint. The base layer is provided, in some examples, to achieve and maintain a relatively low resistance (and hence a relatively high conductivity) within the cathode structure during pulsed arc deposition to avoid issues that can result from a loss of conductivity within the graphitic paint over time as deposition proceeds. Examples of suitable base material compounds are described herein where, e.g., the base layer can withstand temperatures of 1700° F. (927° C.).

Abstract: The present disclosure discloses a film-forming device belongs to the field of film forming technology comprising: a film-forming chamber configured to form a film on a substrate disposed inside the film-forming chamber; a transfer assembly configured to transport a shielding plate into the film-forming chamber along a conveying path, move the shielding plate to a first position, and remove the shielding plate from the film-forming chamber along the conveying path; and a cleaning assembly disposed at the conveying path outside the film-forming chamber for cleaning the shielding plate removed from the film-forming chamber.

Abstract: A magnet unit for a magnetron sputtering apparatus is disposed above the target has: a yoke made of magnetic material and is disposed to lie opposite to the target; and plural pieces of magnets disposed on a lower surface of the yoke, wherein a leakage magnetic field in which a line passing through a position where the vertical component of the magnetic field becomes zero is closed in an endless manner, is caused to locally act on such a lower space of the target as is positioned between the center of the target and a periphery thereof, the magnet unit being driven for rotation about the center of the target. In a predetermined position of the yoke there is formed a recessed groove in a circumferentially elongated manner along an imaginary circle with the center of the target serving as a center.

Abstract: A deposition system and a method of operation thereof are disclosed. A PVD chamber is disclosed comprising a plurality of cathode assemblies, a rotating shield below the plurality of cathode assemblies to expose one of the plurality cathode assemblies through the shroud and through a shield hole of the shield, the shield comprising a top surface including a raised peripheral frame. A shield mount sized and shaped to engage with the raised peripheral frame to secure the shield mount to the shield.

Abstract: A sensor element includes a layered body that includes a measurement-object gas flowing portion which a measurement object gas is introduced and flowed in and a reference electrode that is formed inside of the layered body and a reference gas introducing layer made of a porous material that introduces a reference gas being used as a standard for detection of a specific gas concentration in the measurement-object gas and that flows the reference gas to the reference electrode, the reference gas introducing layer including an inlet portion serving as an inlet of the reference gas and one or more gas flowing spaces provided over a region from the inlet portion to the reference electrode in a direction in which the reference gas is flowed.

Abstract: A method for preparing a super-lubricative multi-layer composite fullerene-like carbon layer/graphene-like boron nitride thin film is provided. A substrate is ultrasonically cleaned in absolute ethyl alcohol and acetone sequentially for 15 min. The substrate is cleaned by argon plasma bombardment for 15 min. A fullerene-like carbon layer A having an onion-like structure is prepared by high-vacuum medium-frequency magnetron sputtering for 30 s. A graphene-like boron nitride layer B is prepared by high-vacuum medium-frequency magnetron sputtering and coating device to sputter the elemental boron target for 30 s. Steps (3) and (4) are repeated 80 times to overlay the fullerene-like carbon layer A and the graphene-like boron nitride layer B in an alternate way. The super-lubricative multi-layer composite fullerene-like carbon layer/graphene-like boron nitride thin film has a large load capacity, and excellent wear resistance, high temperature resistance and super lubrication.

Abstract: A sensor element 101 includes an element main body 101a that includes oxygen ion-conductive solid electrolyte layers (1 to 6), and a porous protective layer 90 that covers at least part of the element main body 101a. The porous protective layer 90 includes a porous inner protective layer 92 and a porous outer protective layer 91 disposed on the outer side of the inner protective layer 92 and having a smaller average pore diameter than the inner protective layer 92.

Abstract: A sputter deposition method includes sputtering a first target material onto a web substrate moving through a first process module while heating the substrate, providing the substrate from the first process module to a connection unit containing a roller assembly including a plurality of cylindrical rollers, bending the substrate at an angle of 10° to 40° around the roller assembly in the connection unit, providing the substrate from the connection unit to a second process module, and sputtering a second target material onto the substrate moving through the second process module while heating the substrate.

Abstract: A film forming apparatus for forming a film by reactive sputtering includes a processing chamber, a sputter mechanism, a sputtered particle shielding member, a reaction chamber, a substrate support, a substrate moving mechanism, a sputtered particle passage hole, and a reactive gas introducing unit. While moving a substrate by the substrate moving mechanism, sputtered particles, that are released to the discharge space by the sputter mechanism and pass through the sputtered particle passage hole to be injected to the reaction chamber, are reacted with a reactive gas introduced into the reaction chamber, and a reactive sputtering film generated by the reaction is formed on the substrate.

Abstract: A potential measurement device includes a plurality of read-out electrodes arranged in an array shape and that detects a potential at a potential generation point generated due to a chemical change, and a reference electrode that detects a reference potential. The reference electrode is arranged within the array of the read-out electrodes. With this configuration, a low-noise potential measurement device in which noise superimposed on a wire from each of the read-out electrodes to an amplifier and noise superimposed on a wire from the reference electrode to the amplifier, i.e., wiring noise, can be reduced is achieved.

Abstract: There is provided a BN-containing ferromagnetic material sputtering target which is capable of suppressing generation of particles during sputtering. A sputtering target containing from 1 to 40 at. % of B and from 1 to 30 at. % of N and comprising a structure including at least one ferromagnetic metal-containing metal phase and at least one nonmagnetic material phase, wherein an X-ray diffraction profile obtained by analyzing the structure with an X-ray diffraction method exhibits a diffraction peak derived from cubic boron nitride.

Abstract: A heater unit includes a heater 72 having first bend portions 95 (95a to 95d) and second bend portions 96 (96a to 96f). The first bend portions 95 are turns present in a maximum-temperature area (first area 90a) where the maximum temperature is reached during heating among areas 88 where the turns have a narrower pitch and having apexes facing each other in the short-length direction (left-right direction) of a ceramic substrate. The second bend portions 96 are turns present in areas 89 where the turns have a wider pitch and having apexes facing each other in the short-length direction. The distance X1 [mm] between the first bend portions 95 facing each other is larger than the distance X2 [mm] between the second bend portions 96 facing each other.

Abstract: Two-piece shutter disk assemblies for use in process chambers are provided herein. In some embodiments, a shutter disk assembly for use in a process chamber includes an upper disk member having a top surface and a bottom surface, wherein a central alignment recess is formed in a center of the bottom surface, and a lower carrier member having a solid base having an upper support surface, wherein the upper support surface includes a first central self-centering feature disposed in the recess formed in the center of the bottom surface and an annular outer alignment feature that protrudes upward from a top surface of the lower carrier and forms a pocket, wherein the upper disk member is disposed in the pocket.

Abstract: A gas concentration detection apparatus is provided with a measuring gas chamber, a solid electrolyte body, a pump cell, a sensor cell, a pump cell controller and a sensor cell detection section. The pump cell controller applies an elimination voltage to the pump cell at a start-up point, before a gas concentration is detected. The water in the measuring gas chamber is decomposed and hydrogen is generated by application of the elimination voltage. Oxygen occluded in a sensor electrode of the sensor cell is removed by the hydrogen.

Abstract: The invention relates to an electrochemical measuring cell for measuring the content of chlorine compounds in water, having an electrolyte chamber (2) which receives an electrolyte, a measuring electrode (3) which delimits the electrolyte chamber, a reference electrode (5), and a counterelectrode (4). Said electrochemical measuring cell is characterised in that the measuring electrode (3) is a rigid, porous platinum membrane having a pore size of 0.15 ?m to 0.25 ?m, which produces the contact with the electrolyte and the water.