Abstract: A vertical cavity surface emitting semiconductor laser (VCSEL) device has p-type and n-type DBRs sandwiching therebetween a resonant cavity including an active layer. Each the DBRs has a plurality of layer pairs each including a Alx1Ga1-x1As high-reflectivity layer and an Alx2Ga1-x2As low-reflectivity layer and an Alx3Ga1-x3As slope content layer interposed between each of the high-reflectivity layers and adjacent low-reflectivity layer. The slope content layers in the vicinity of the active layer has an Al content x3 wherein 0<x3?0.3 and 0.55?x3<1 and an impurity concentration of 3×1017 cm?3 or above.

Abstract: An optical pickup apparatus and a laser diode chip which can simplify and miniaturize a construction of the apparatus is provided for using a plurality of laser beams of different wavelengths. The laser diode chip is a chip for the optical pickup apparatus in which a plurality of light emitting portions for emitting the laser beams of the different wavelengths in the same emitting direction are formed on a substrate. Light emitting points of the plurality of light emitting portions are located at positions which are different in the emitting direction.

Abstract: A simple and effective coherent radiation device generates laser-like radiation from an optical parametric oscillator (OPO) that is formed by a dielectric-modulation structure in a nonlinear optical material. The nonlinear optical material used in the OPO can be a birefringence phase-matched material or a quasi-phase-matched material.

Abstract: A semiconductor device having a single-crystal substrate made of a material different from nitride III-V compound semiconductors, and a device made on one major surface of said single-crystal substrate by using III-V compound semiconductors, including electrical connection to said device being made through a via hole formed in said single-crystal substrate and method of making the same.

Abstract: To provide a semiconductor laser device that is capable of outputting high power laser light and is suitable for optical recording, optical communication, welding, and the like, and a multiple wavelength laser light emitting apparatus employing the semiconductor laser device. The semiconductor laser device includes an optical element that at least partially reflects a laser beam emitted from an end face of a laser light oscillator in a semiconductor laser array element so that the laser beam is incident on another laser light oscillator. Due to this, even when laser light oscillators are disposed with such a pitch that does not pose problems in manufacturing, a laser beam emitted from an end face of one laser light oscillator and a laser beam emitted from an end face of another laser light oscillator are phase-locked. By condensing these laser beams, the semiconductor laser device can output higher power laser light than conventional.

Abstract: A vertical cavity laser (VCL) including a first mirror formed adjacent a substrate, an optical cavity formed adjacent the first mirror, a second mirror formed adjacent the optical cavity, a first current and/or optical aperture formed within the cavity, within the mirror or at the surface of the mirror, and an antiguide for reducing, balancing, or reversing the index step created by the first current and/or optical aperture. The VCL may further include a second optical aperture for confining the optical mode to provide single mode operation.

Abstract: A package accommodates an LD device for emitting laser light with the center wavelength of which is in a range of 1300 to 1440 nm and airtight seals a light path extending from the LD device to an incident end of an optical fiber. The package is filled with a nitrogen gas at a standard atmospheric pressure with the amount of moisture limited to a value lower than 100000 ppm by volume or less. Therefore, the amount of moisture in the light path for laser light within the package is limited to 100000 ppm by volume or less.

Abstract: Two thin-clad laser diodes are disposed to form a stack-type device that emits two beams. The beams are substantially parallel and in proximity such that they share many fiberoptic systems designed for a single beam. In one embodiment the device functions as a dual-wavelength fiber-pigtailed light source. In another embodiment a feedback mechanism is provided to couple the diodes. Other embodiments include structures and methods for output power enhancement and tunable lasers.

Abstract: Disclosed are semiconductor laser devices which hardly have degradation when used to generate high power of 200 mW or greater over a long period of time. An exemplary semiconductor laser device comprising a semiconductor substrate, and a layer structure formed on the semiconductor substrate and having an active layer with a quantum well layer formed of a ternary system mixed crystal of a III-V compound semiconductor. The material of the quantum well layer is formed in an equilibrium phase which is thermodynamically stable at both the growth temperature and the operating temperature. The material preferably has a substantially homogeneous disordered microstructure. In a preferred embodiment, the material comprises GaAsSb. The quantum well layer exhibits improved thermodynamic stability, and the device can emit light in the 980 nm band at high power levels for longer periods of time without failure in comparison to conventional InGaAs 980 nm pumping lasers.

Abstract: A diffraction grating is provided in the vicinity of a GRIN-SCH-MQW active layer formed between a radiation side reflection coating provided on a radiation end face of a laser beam and a reflection coating provided on a reflection end face of the laser beam, and on the radiation side reflection coating side. An n-InP layer which covers the upper part of the diffraction grating is also provided, so that the current from the p-side electrode is prevented from being injected to the vicinity of the diffraction grating by the n-InP layer. An n-InPGaAsP diffusion prevention layer forms a non-current injection area so as to suppress alloying with the p-side electrode.

Abstract: A higher intensity eye safe laser is provided for long range target designation or illumination as well as long range eye safe communications by providing a single beam line combination of an optical parametric oscillator and optical parametric amplifier which are used to double the output of the optical parametric oscillator while limiting beam spread to less than 1.2 milliradians assuming a 20 mm clear aperture. The OPO/OPA combination requires no conditioning, isolation or synchronization optics and provides a factor of two improvements in beam quality as compared to an equivalent optical parametric oscillator, with the subject system providing a compact robust configuration. The high conversion is provided by the use of a simple optical parametric oscillator seeding an optical parametric amplifier without double passing the pump pulse in the optical parametric oscillator.

Abstract: An apparatus comprising a first reference element having an output power that varies monotonically with input frequency over an operating frequency range and receiving at least a portion of an output beam of light from an optical source. A second reference element having an output power that is frequency dependent receives at least a portion of the output beam of light. A first optical detector measures the power of a first reference beam of light from the first reference element. A second optical detector measures the power of a second reference beam of light from the second reference element. Electronic circuitry is coupled to the first and second optical detectors for receiving first and second reference signals therefrom and producing a coarse error signal for permitting coarse adjustment and a fine error signal for permitting fine adjustment of the frequency of the output beam of light.

Abstract: The present invention is a Raman laser and methods related thereto. In the preferred embodiments, the Raman laser comprises a laser pump signal in a fiber waveguide which is optically coupled to a micro-resonator through a fiber taper. The micro-resonator is constructed from a material that has a high Q when it is formed into a micro-resonator and is phase matched to the waveguide. The lasing frequency can be determined based upon the pump input or the micro-resonator material. In the preferred embodiments, the micro-resonator is constructed from a fused silica material. The present invention provides a compact laser with improved emissions and coupling efficiencies and the ability to use stimulated Raman scattering effects to create lasers having frequencies that are otherwise difficult to obtain. Alternative configurations include multiple micro-resonators on a single fiber waveguide and/or utilizing multiple waveguides attached to one or more micro-resonators.

Abstract: An optical system has a diode pump source, and a gain media made of a material with an anisotropic absorption. The gain media is cut at an angle to produce substantially polarization-independent absorption of a pump beam. An optical coupler is positioned between the diode pump source and the gain media. The optical coupler produces a pump beam that has substantially equal amounts of pump power along any two orthogonal axis that are orthogonal to the pump beam in the gain medium. The wavelength range allowed for the pump source is extended.

Abstract: A system and method for selectively process material on a processing surface of a printing form to create a fine structure or pattern for images or text. At least one fiber laser comprising a pump source and a laser fiber is provided. A laser gun is mounted adjacent the printing form and has at least a focusing optics. The fiber laser outputs a laser beam which is diffraction-limited to permit the focusing optics to focus the laser beam onto the processing surface of the printing form as a spot having a spot size sufficiently small to process the processing surface to create the fine structure or pattern images or text.

Abstract: An optical system for a laser comprises at least means for imaging a laser beam onto a first optical material (1, 1b). These imaging means comprise at least one optical image system (2) for focusing said laser beam onto the first optical material (1, 1b) and at least one optical means for changing the angle of the propagation axis of the laser beam, whereby the optical imaging system is positioned between the optical means and the first optical material, and may be described by formula (I) whereby D is substantially zero ( AB CD ) - matrix .

Abstract: A modular, compact and widely tunable laser system for the efficient generation of high peak and high average power ultrashort pulses. Modularity is ensured by the implementation of interchangeable amplifier components. System compactness is ensured by employing efficient fiber amplifiers, directly or indirectly pumped by diode lasers. Peak power handling capability of the fiber amplifiers is expanded by using optimized pulse shapes, as well as dispersively broadened pulses. After amplification, the dispersively stretched pulses can be re-compressed to nearly their bandwidth limit by the implementation of another set of dispersive delay lines. To ensure a wide tunability of the whole system, Raman-shifting of the compact sources of the ultrashort pulses in conjunction with frequency-conversion in nonlinear optical crystals can be implemented, or an Anti-Stokes fiber in conjunction with fiber amplifiers and Raman-shifters are used.

Abstract: A laser and method for making the same are disclosed. The laser includes a p-layer, an n-layer, and an active region located between the p-layer and the n-layer. The active region includes a quantum well layer sandwiched between first and second barrier layers. The quantum well layer includes an InP-based material. The first and second barrier layers also include an InP-based material. The barrier layers are homogeneous layers of the InP-based material. The barrier layers are preferably deposited by chemical vapor deposition from precursors that include a surfactant element that inhibits the formation of P—P dimers on a surface of the barrier layer during the deposition process. In one embodiment, the surfactant element is chosen from the group consisting of Sb, Si, and Te, and the barrier material includes InGaP or AlInP.

Abstract: A method of biasing a laser that includes determining a threshold current of a laser and setting a bias current for the laser as a factor of the threshold current.

Abstract: In one aspect, the invention provides a laser diode assembly, comprising a carrier, a laser diode, a first bonding member, and a second bonding member. The carrier has a conductive layer formed thereon that is sized for attaching at least two bonding members thereto. The laser diode is operably coupled to the carrier and has first and second conductive pads formed thereon. The first and second conductive pads are each sized for attaching at least one bonding member thereto. The first bonding member couples the first conductive pad to the conductive layer of the carrier, and the second bonding member couples the second conductive pad to the conductive layer of the carrier.