Abstract: The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.

Abstract: A method of maintaining desirable optical performance of an optoelectronic apparatus at extreme temperatures is disclosed. At a first temperature, a first bias current at which the laser generates optical signals at a first level is determined. At a second temperature outside of a predefined range of the first temperature, a second bias current at which the laser generates optical signals at a second level is determined. If the second temperature is greater than the higher end-point temperature of the predefined range, the second predefined level is defined to be less than the first predefined level. If the second temperature is less than the lower end-point temperature of the predefined range, the second predefined range is defined to be greater than the first predefined level.

Abstract: A semiconductor laser device includes a p-InP cladding layer, an active region, a first n-InP cladding layer, a second n-InP cladding layer, and an n-InGaAsP cladding layer with a thickness between 0.05 ?m and 0.3 ?m, sandwiched by the first and second n-laP cladding layers and laminated at a position closer to the active region than a position at which optical intensity of a near-field pattern of laser light emitted from the active region becomes substantially zero. The semiconductor laser device exhibits a small reduction in the optical output even when a large current flows, and has a high slope efficiency without changing the near-field pattern a great deal.

Abstract: The laser type semiconductor optical component comprises: a semiconductor material substrate, a bottom cladding layer containing n-type carriers, an active layer forming one of more quantum wells, and a top cladding layer containing p-type carriers. To increase the emission power of the laser without increasing the vertical divergence of the beam, the bottom cladding layer has a higher refractive index than the top cladding layer. The lasers for pumping optical fiber amplifiers.

Abstract: A Littman configuration type wavelength tuning mechanism comprising an LD block (1), a grating (3) and a wavelength adjusting mirror (4). In the wavelength tuning mechanism, turning means realizing a Littman configuration of said grating with regard to said wavelength adjusting mirror is realized by an armless structure to be turned about the virtual pivot (2-2) of said wavelength adjusting mirror.

Abstract: A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.

Abstract: Monolithic integrated vertical-cavity surface-emitting laser devices are disclosed including an edge-emitting semiconductor pump laser (PL), an optically-pumped vertical-cavity surface-emitting laser (VCSEL), and a means for deflecting and shaping the output beam of the pump laser to optically excite the VCSEL. The optically-pumped VCSEL structure may be adapted to include a resonant cavity with multiple fixed wavelengths, or a resonance cavity whose wavelength is continuously tunable. Wafer level manufacturing techniques are also disclosed.

Abstract: A laser oscillator includes: electrode tubes 15, for employing a discharge to excite a laser gas 10, and for generating a laser beam 11; a box 13, for storing parts, such as the electrode tubes 15; and an optical catalyst layer 20, which is formed on the inner walls of the box 13.

Abstract: Known laser diode selections are limited to those designed for high power applications (high gain) or those designed for stable single mode operation in an external cavity (low gain). Exponential gain of laser diodes implemented according to embodiments of the present invention is improved (i.e., optimized) to provide both high output power and stability in an external cavity. This is accomplished by controlling the number of quantum wells, light confinement factor, and the transparency current of the laser diode.

Abstract: A two-dimensional LD (laser diode) array light-emitting device constituted by stacking light-emitting units each having a LD bar and a cooling assembly for cooling the LD bar with a simplified electrical connection structure to reduce manufacturing cost. The cooling assembly is electrically connected with one electrode of the LD bar through the die spacer so that a part of the cooling assembly serves as one electrode of the light-emitting unit. The other electrode of the LD bar is electrically connected with a webbed extending section of a conductive layer of a TAB (tape-automated bonding) sheet so that the conductive layer serves as the other electrode of the light-emitting unit. A space between the adjacent cooling assemblies for arranging the LD bar is adjusted by the spacer sheet intervened between the TAB sheet and the cooling assembly.

Abstract: A semiconductor laser diode and method are described, wherein the path of the current through the device between the positive and negative conductors is controlled. Lateral spread of the gain current in the active region is prevented by implanting protons in areas of the active layer flanking a desired gain region. The implanted regions become less conductive, and prevent lateral spread of the gain current. The position of the implanted regions can be selected so that the gain current only crosses a portion of the active layer that supports desired lateral modes of the laser light.

Abstract: A nitride-based semiconductor laser device capable of preventing deterioration in the vicinity of a facet is obtained. This nitride-based semiconductor laser device comprises a first conductivity type first cladding layer consisting of a nitride-based semiconductor formed on a substrate, an active layer formed on the first cladding layer, a second conductivity type second cladding layer consisting of a nitride-based semiconductor formed on the active layer and a high-resistance region formed at least portions of the active layer and the second cladding layer in the vicinity of the facet. The high-resistance region has higher resistance than the remaining regions, whereby a current hardly flows to the high-resistance region. Thus, temperature increase is suppressed in the vicinity of the facet, whereby deterioration can be prevented in the vicinity of the facet.

Abstract: An edge emitting semiconductor laser suppresses the “beam steering” to raise its maximum output with a simple configuration. An optical waveguide serving as a resonator includes an active layer and a cladding layer. A first edge, to which one end of the waveguide is connected, serves as an emission edge. A second edge, to which the other end of the waveguide is connected, is located at an opposite side to the first edge. The waveguide includes at least two parts having different widths, one of the at least two parts being a fundamental mode section. Current injection suppressing means is provided for suppressing or controlling current injection into the active layer in at least part of the fundamental mode section. The current injection suppressing means is preferably made by a current blocking layer, a current-limiting masking layer, or a passive wave-guiding region.

Abstract: A diode-pumped solid-state laser has been invented that provides long Q-switched pulses at high repetition rate with high stability. The laser incorporates Nd:YVO4 as the gain medium.

Abstract: An optical beacon is comprised of a telescope having a primary focal plane or Coudé focal plane, a plurality of fiber coupled laser sources for generating a plurality of beams, a collimator for collimating the plurality of beams, and optics for combining and focusing the plurality of collimated beams onto the primary or Coudé focal plane of the telescope. The telescope propagates the optical beacon, which is arranged into a ring of incoherent plurality of collimated beams. The apparatus further comprises fiber splitters coupled to each laser source to provide at least eight beams from at least four laser sources. The optics comprises a prism assembly, a combiner lens, a focusing lens and a field lens for focusing the plurality of collimated beams onto the primary focal plane or Coudé focal plane of the telescope.

Abstract: A tunable optical source comprises a laser diode and an external optical feedback device. The feedback device has a waveguiding portion fabricated at least in part out of a glass material having both organic and inorganic components. A control device is provided for controlling the refractive index of the glass material so as to change the wavelength of feedback to the laser diode. The glass material may for example have thermo-optic properties and the control device might then be a heating device for heating the glass material. The feedback device can have more than one portion, a second portion for example having controllable coupling characteristics for coupling optical radiation into or out of the feedback device. It also preferably has a portion for controlling optical path length in the feedback device.

Abstract: A laser driver circuit includes a biasing current source, a threshold current source, and a modulation current source, wherein the threshold current source produces a threshold current in response to an input signal with an interval exceeding an interval of a modulation current such that said interval of the threshold current includes the interval of said modulation current. The laser driver circuit drives the laser diode by a sum of a continuous bias current, the threshold current and the modulation current.

Abstract: A heat radiator for dissipating heat from an electronic device, which is mounted on a board or which is installed in a casing, to the outside thereof is basically composed of a substrate having plenty of through holes, which are produced by press molding and sintering. The substrate having a low thermal expansion coefficient is made of a copper-tungsten alloy or a copper-molybdenum alloy in which the copper content is smaller than the tungsten content or molybdenum content. The through holes each having a circular shape or a rectangular shape are infiltrated with the compound having a high thermal conductivity and composed of a copper-tungsten alloy or a copper-molybdenum alloy in which the copper content is greater than the tungsten content or molybdenum content. Thus, the heat radiator allows thermal conduction along axial directions of the through holes while substantially avoiding unwanted thermal expansion thereof.

Abstract: A grating-stabilized semiconductor laser comprises a semiconductor laser gain medium, an integrated low-index waveguide, and a waveguide grating segment providing optical feedback for laser oscillation. The laser may be adapted for multi-mode or single-mode operation. A multiple-mode laser may oscillate with reduced power and/or wavelength fluctuations associated with longitudinal mode wavelength shifts, relative to Fabry-Perot lasers lacking gratings. A single-mode laser may include a compensator, wavelength reference, and detector for generating an error signal, and a feedback mechanism for controlling the compensator for maintaining the laser wavelength locked to the reference. The laser may include means for altering, enhancing, tuning, and/or stabilizing the waveguide grating reflectivity spectral profile. The laser may be adapted for optical transverse-coupling to another waveguide.

Abstract: The present invention provides gas discharge laser systems capable of reliable long-term operation in a production line capacity at repetition rates in the range of 6,000 to 10,0000 pulses power second. Preferred embodiments are configured as KrF, ArF and F2 lasers used for light sources for integrated circuit lithography. Improvements include a modified high voltage power supply capable for charging an initial capacitor of a magnetic compression pulse power system to precise target voltages 6,000 to 10,0000 times per second and a feedback control for monitoring pulse energy and determining the target voltages on a pulse-by-pulse basis. Several techniques are disclosed for removing discharge created debris from the discharge region between the laser electrodes during the intervals between discharges. In one embodiment the width of the discharge region is reduced from about 3 mm to about 1 mm so that a gas circulation system designed for 4,000 Hz operation could be utilized for 10,000 Hz operation.