Patents Examined by James Menefee
  • Patent number: 7103077
    Abstract: A system for measuring the energy of an ultra-short pulse in a laser beam includes a half-wave plate for orienting the polarization of the beam. A polarizing beam splitter is used to reflect a portion of each pulse of the beam and a remainder of the beam is transmitted toward a target. Energy in the reflected portion is measured by a laser energy meter (“LEM”) to determine the energy in the remainder of the beam. An output signal from the LEM is used to obtain an error signal that can then be used to rotate the half-wave plate to control the energy level in the remainder of the beam. In an alternate embodiment, a fixed-ratio beam splitter and a second LEM are used to measure and control the energy in the remainder of the laser beam.
    Type: Grant
    Filed: April 29, 2004
    Date of Patent: September 5, 2006
    Assignee: 20/10 Perfect Vision Optische Geraete GmbH
    Inventors: Michael Schuhmacher, Markus Schiller
  • Patent number: 7103075
    Abstract: A solid laser apparatus has a wavelength converter temperature controller 40 arranged for driving a Peltier device 41 to control the temperature Tc of a wavelength converter 5 so that the acceptable wavelength range of the wavelength converter 5 adapts to the wavelength range of reflected light from the grating part 6 at the temperature Ti and a laser controller 60 arranged for driving a semiconductor light amplifier device 1 to maintain the intensity of the extraordinary component passed through the polarizer 52 and measured by a photometer device 57.
    Type: Grant
    Filed: May 18, 2004
    Date of Patent: September 5, 2006
    Assignee: Shimadzu Corporation
    Inventors: Koji Tojo, Takashi Fujita, Ichiro Fukushi
  • Patent number: 7103076
    Abstract: An ultrashort pulsed laser device includes: a pump laser diode having linear polarization; a solid laser medium oscillating with linear polarization; an optical fiber maintaining a polarization direction; and a saturable absorber mirror. The solid laser medium is disposed between the optical fiber and the saturable absorber mirror. Laser light emitted from the pump laser diode optically is coupled with a first end face of the optical fiber, and laser light emitted from a second end face of the optical fiber pumps the solid laser medium. The first end face of the optical fiber and the saturable absorber mirror constitute a laser resonator. With this configuration, mode lock can be realized stably at a repetition frequency of several hundred MHz.
    Type: Grant
    Filed: October 22, 2003
    Date of Patent: September 5, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yasuo Kitaoka, Kazuhisa Yamamoto
  • Patent number: 7098064
    Abstract: Immediately after stacking of a barrier layer formed of GaAsP of a multiple-strain quantum well active layer 105 at a growth temperature of 650° C., a second upper guide layer 126 formed of AlGaAs is stacked. This second upper guide layer 126 is grown while the temperature is kept at 650° C., which is a growth temperature suitable for P-based layers. By reducing the desorption of P from the barrier layer, the roughness level of the interface between the barrier layer and the second upper guide layer 126 is lowered to 20 ? or less. Thereafter, a first upper guide layer 106 is stacked. Growth temperature of this first upper guide layer 106, which is 650° C. at a start of the growth, is started to be increased concurrently with the growth, and gradually elevated until an end of the growth so as to reach 750° C. at the end of the growth.
    Type: Grant
    Filed: September 23, 2003
    Date of Patent: August 29, 2006
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Shuichi Hirukawa
  • Patent number: 7099358
    Abstract: A gain medium 12 and a tunable filter are provided in an optical path of laser oscillation. The tunable filter has an optical beam deflector for periodically changing an optical beam at a constant angular speed, a prism 26 on which deflected light is made incident, and a diffraction grating 27. Appropriate selection of the apex angle ? of the prism 26 and an angle ? formed by the prism 26 and the diffraction grating 27 can provide a tunable laser light source for changing the oscillation frequency at high speed and a constant variation rate.
    Type: Grant
    Filed: January 27, 2006
    Date of Patent: August 29, 2006
    Assignee: Santec Corporation
    Inventor: Changho Chong
  • Patent number: 7099357
    Abstract: A wavelength-tunable laser apparatus includes a semiconductor substrate, a Fabry-Perot (FP) laser, and a planar lightwave circuit. The FP laser is formed on the semiconductor substrate at one side thereof, and has a plurality of longitudinal modes. The planar lightwave circuit is formed on the semiconductor substrate at the other side thereof, and includes a waveguide and a clad surrounding the waveguide with a grating carved into a portion of the waveguide. Light outputted from the FP laser is coupled to the waveguide, the grating reflects a plurality of light beams of different wavelengths, and the FP laser is wavelength-locked by one of the light beams reflected from the grating.
    Type: Grant
    Filed: November 25, 2003
    Date of Patent: August 29, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Se-Yoon Kim
  • Patent number: 7099363
    Abstract: A surface-emitting laser has a lower multilayer film reflecting mirror, an active layer, a current confinement layer, a clad layer, an upper multilayer film reflecting mirror, and an upper electrode formed in the order described on the upper surface of a substrate having a lower electrode formed on the lower surface thereof. The current confinement layer includes a conductive part and an insulating part surrounding the conductive part with the conductive part being defined by a sidewall surface that widens along a direction toward the active layer.
    Type: Grant
    Filed: December 4, 2002
    Date of Patent: August 29, 2006
    Assignee: Fujitsu Limited
    Inventor: Koji Otsubo
  • Patent number: 7099364
    Abstract: A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.
    Type: Grant
    Filed: September 17, 2004
    Date of Patent: August 29, 2006
    Assignee: Sony Corporation
    Inventors: Yoshiaki Watanabe, Hironobu Narui, Yoshinori Yamauchi, Yuichi Kuromizu, Yoshiyuki Tanaka
  • Patent number: 7099360
    Abstract: An optical transmitter includes an external cavity laser array formed in a PLC, a trench-based detector array and an AWG. The external cavity laser is formed using an array of substantially similar laser gain blocks and an array of gratings formed in waveguides connected to the gain blocks. Each grating defines the output wavelength for its corresponding external cavity laser. Each detector of the detector array includes a coupler to cause a portion of a corresponding laser output signal of the laser array to propagate through a first sidewall of a trench and reflect off a second sidewall of the trench to a photodetector. In one embodiment, the photodetector outputs a signal indicative of the power level of the reflected signal, which a controller uses to control the laser array to equalize the power of the laser output signals.
    Type: Grant
    Filed: February 3, 2003
    Date of Patent: August 29, 2006
    Assignee: Intel Corporation
    Inventors: Achintya K. Bhowmik, Nagesh K. Vodrahalli, Gennady Farber, Hai-Feng Liu, Hamid Eslampour, Ut Tran, William B. Wong, Ruolin Li, Jesper Jayaswal-Arentoff
  • Patent number: 7095766
    Abstract: A high-speed, directly modulated ridge waveguide laser includes: a ridge structure at a junction surface of the laser chip; and a plurality of pads only on non-active areas of the junction surface, where the plurality of pads protrude beyond an edge of the ridge structure. The laser chip can thus be held by a manufacturing tool, such that the manufacturing tool abuts the pads without abutting the ridge structure. In this manner, the ridge structure of the laser is protected from damage due to contacts by manufacturing tools, increasing the device yield of a wafer. By providing the pads only on the non-active areas of the junction surface, parasitic capacitance for contacts in the active areas can be properly controlled.
    Type: Grant
    Filed: June 24, 2003
    Date of Patent: August 22, 2006
    Assignee: Emcore Corporation
    Inventors: Bernd Witzigmann, Trinh D. Nguyen, Charles Su-Chang Tsai
  • Patent number: 7095775
    Abstract: The invention herein is directed to a dual-chamber combustion laser assembly having lighter weight (per unit flow area), a more compact, flexible configuration for packaging in spacecraft, aircraft, or ground mobile vehicles, higher mass efficiency from lower heat loss and proven power extraction efficiency of linear lasers, superior output beam quality by incremental compensation of gain medium optical path disturbances and by reduction in time-dependent variations in structural and gain medium characteristics, lower cost and shorter fabrication time for modular dual flow laser and linear optics, more efficient pressure recovery with side-wall isolation nozzles and compact diffuser configurations, and increased small signal gains for more efficient extraction of overtone power.
    Type: Grant
    Filed: October 18, 2005
    Date of Patent: August 22, 2006
    Assignee: Science Applications International Corporation
    Inventors: Gary Francis Morr, Sheri Lynne Woelfle
  • Patent number: 7088754
    Abstract: The present invention provides a semiconductor laser devices of hologram laser type, constructed so that the configuration of the optical elements barely changes even if its package expands due to a rise in temperature or moisture absorption. In the semiconductor laser device, a body frame made of an insulating resin contains a semiconductor laser element, a mirror, a photo-detecting element for reading signals, a mirror-mounting base and a detector-mounting base. Also, a holographic element is mounted on the top of the sidewall of the body frame. The mirror-mounting base and the detector-mounting base are made of a resin, wherein each base is integrally formed with the base plate of the body frame and is separated from the sidewall of the body frame.
    Type: Grant
    Filed: December 19, 2003
    Date of Patent: August 8, 2006
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Kazunori Matsubara
  • Patent number: 7088751
    Abstract: A solid-state laser apparatus includes a cavity 17 for storing a laser diode 40 and a laser medium 6 to be excited by the laser diode 40, and a storage unit 70, for communicating with the cavity 17 and for internally storing a drying agent 71. A moisture permeable film 72 is formed at openings 73 whereat the cavity 17 and the storage unit 70 communicate with each other.
    Type: Grant
    Filed: March 8, 2001
    Date of Patent: August 8, 2006
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kenichi Matsui, Akihiro Otani
  • Patent number: 7088759
    Abstract: A laser system (52A) is illustrated having a laser cavity (54) that generates a laser beam (78). An outcoupling resonator box (62) has a reflective mirror (70) therein. A return resonator box (64) has a reflective mirror (72) therein. A first solid window assembly (66) is disposed between the outcoupling resonator box (62) and the laser cavity (54). A second solid window assembly (68) is disposed between the return resonator box (64) and the laser cavity (54) so that the beam (78) is directed through the solid window assemblies (66), (68) during operation of the laser system, thereby isolating the usually caustic environment of laser cavity (54) from that of mirrors (70), (72) that are housed in said resonator boxes (62), (64), without the use of isolation valves and optical tunnels as in traditional arrangements.
    Type: Grant
    Filed: March 24, 2003
    Date of Patent: August 8, 2006
    Assignee: The Boeing Company
    Inventors: Jean Welhouse Orr, Yan Sau Tam
  • Patent number: 7088745
    Abstract: A diode laser system providing a high-power laser beam with good spatial coherence, which can be focused to a small spot size over long distances and which has a good pointing stability. The laser system comprises a laser diode (301) adapted to emit a first light beam, where the first light beam comprises a plurality of spatial modes, selection means (304) adapted to select a predetermined part of the first light beam, and a reflector (306), where the laser diode and the reflector define a cavity and where the reflector is adapted to reflect the selected part of the first light beam back into the laser diode as a second light beam. The laser system is characterised in that the selection means is adapted to select a part of the first light beam corresponding to a spatial mode with a higher mode number than a spatial mode with maximum gain.
    Type: Grant
    Filed: September 5, 2001
    Date of Patent: August 8, 2006
    Assignee: Esko-Graphics A/S
    Inventor: Paul Michael Petersen
  • Patent number: 7085303
    Abstract: A laser includes a chamber having a front mirror and a back mirror defining a optical propagation path. An optical gain medium such as a solid state disk, rod or slab is located between the front and back mirrors within the chamber to produce a laser light along the optical propagation path. A birefringent lens formed from an optically active material is located within the chamber to simultaneously focus the laser light and to affect the polarity of the laser light as the light passes through the birefringent lens.
    Type: Grant
    Filed: October 16, 2003
    Date of Patent: August 1, 2006
    Assignee: The Boeing Company
    Inventors: Jeffrey H. Hunt, Vytas T. Gylys, Bruce Cameron
  • Patent number: 7082147
    Abstract: A system for laser light delivery from an organic fiber laser, including a multi-layered vertical cavity film structure, wherein the multi-layered vertical cavity film structure is excited by an energy source; and an optical fiber integrated with the multi-layered vertical cavity film structure, such that the multi-layered vertical cavity film structure is deposited on the optical fiber; and wherein the delivery of laser light occurs at an end of the optical fiber as emitted laser
    Type: Grant
    Filed: March 24, 2003
    Date of Patent: July 25, 2006
    Assignee: Eastman Kodak Company
    Inventors: John P. Spoonhower, Thomas M. Stephany, Anne M. Miller
  • Patent number: 7079561
    Abstract: A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.
    Type: Grant
    Filed: April 14, 2005
    Date of Patent: July 18, 2006
    Assignee: Fuji Xerox Co., Ltd
    Inventors: Akira Sakamoto, Hideo Nakayama, Yasuaki Miyamoto, Jun Sakurai
  • Patent number: 7079559
    Abstract: A semiconductor laser device with a first side and a second side, comprising (a) an active region, (b) a P layer, wherein the P layer contains a first contact area, (c) an N layer, wherein said N layer contains a second contact area, wherein the contact area of the first contact area of the P layer and the second contact layer of the N layer reside on the first side of the laser device.
    Type: Grant
    Filed: February 25, 2003
    Date of Patent: July 18, 2006
    Assignee: Tyco Electronics Corporation
    Inventors: Tansen Varghese, William Ring
  • Patent number: 7079562
    Abstract: A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.
    Type: Grant
    Filed: April 14, 2005
    Date of Patent: July 18, 2006
    Assignee: Fuji Xerox Co., Ltd.
    Inventors: Akira Sakamoto, Hideo Nakayama, Yasuaki Miyamoto, Jun Sakurai