Abstract: Provided are 4-(alkoxyhydroxy)styryl triazine photoinitiator compounds having the formula: ##STR1## wherein n is 3 or 4, as well as photopolymerizable compositions and photographic elements containing such photoinitiator compounds. These photoinitiator compounds improve the reproduction quality of photographic elements such as lithographic printing plates since the photosensitive compositions in which they are incorporated are resistant to surface blooming.

Abstract: A method for electrically connecting a thin film electrode to a connecting terminal on an active matrix in the manufacture of a thin film actuated mirror is disclosed. The method includes the steps of: forming a thin film sacrificial layer having an empty cavity on top of the active matrix; forming an elastic, a second thin film and a thin film electrodisplacive layers, successively, on top of the thin film sacrificial layer including the empty cavity; forming a contact hole extending from top of the thin film electrodisplacive layer to top of the connecting terminal; forming a first thin film layer on top of the thin film electrodisplacive layer including the contact hole; patterning the first thin film, the thin film electrodisplacive, the second thin film and the elastic layers, respectively; and removing the thin film sacrificial layer, thereby forming the thin film actuated mirror.

Abstract: The present inventors have discovered that fine patterns of metal or insulator can be formed on printed circuit board using conventional lithographic steppers with inverted projection lenses. The inverted projection lenses act as enlargement lenses rather than reducing lenses and exhibit a large depth of focus sufficient to accommodate the deviations of PC board from planarity. The inverted lens reduces the size of the image needed at the mask, permitting multiple mask levels to be combined on a single glass. This reduces the cost of the mask set and permits the use of smaller glass masks having greater accuracy and dimensional stability than the convention mylar masks used for PC board.By inverting the projection lenses on near-obsolete steppers, applicants were able to form metal patterns on PC board of finer dimension than heretofore reported. Inverting a 5.times. ZEISS lens on a GCA 6300A stepper, applicants were able to form vias of less than 25 .mu.

Abstract: Disclosed is a method for the optimum utilization of disk-shaped base material in the manufacture of optoelectronic components with variable-period grating. The method helps avoid material losses by arranging optoelectronic components on a disk-shaped base material in an optimum manner and is based on obtaining variants of nominally identical individual component patterns by mathematical rotation and mirroring, forming a unit cell through shifting of the individual component pattern variants, and reproducing the unit cell in the x and y directions until the active surface of the mask or the entire surface of the disk-shaped base material is tightly covered. The method may be used for the manufacture of photonic components based on DFB, DBR, or sampled grating structures.

Abstract: It is an object of the present invention to obtain a resist pattern of a high dimensional accuracy. In order to accomplish this object, a pattern lithography method according to the present invention comprises the steps of: forming a resist film 2 on a substrate 1 to be processed; applying a hydrous polymer solution 4 on the resist film 2; cross-linking polymers in the hydrous polymer solution to form a hydrogel film 4a of a predetermined thickness; and pattern-exposing the resist film 2 through the hydrogel film, and then, removing the hydrogel film 4a.

Abstract: An assemblage useful for autoradiography comprising, in order, a sample layer containing a radioactively labeled biological sample in contact with a phosphor layer, a film layer and a reflector layer. The phosphor layer is preferably a gadolinium oxysulfide containing layer and the film is preferably a photographic film containing a tabular grain emulsion.

Abstract: The negative-working resist composition which comprises a (meth)acrylate copolymer comprising (a) a vinyl monomer unit which contains in a side chain thereof at least one carbon--carbon double bond which does not concern itself with any polymerization reaction, but is able to be crosslinked with a crosslinking agent, (b) an acrylamide or methacrylamide monomer unit, (c) an acrylic acid or methacrylic acid monomer unit and (d) an acrylic acid or methacrylic acid adamantyl monomer unit as well as a crosslinking agent capable of being decomposed upon exposure to a patterning radiation and then causing crosslinking of said copolymer upon heating. The resist composition is particularly suitable for excimer laser lithography using an aqueous basic solution as a developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.

Abstract: A photosensitive composition comprising(a) a resin selected from the group consisting of novolak resins and polyvinylphenol resins;(b) an amino compound derivative capable of curing the resin;(c) at least one member selected from the group consisting of cyanine compounds of the following formula (I) and polymethine compounds of the following formula (II), as a compound showing absorption in a near infrared wavelength region: ##STR1## (d) a photosensitive acid-forming agent.

Abstract: The invention is generally accomplished by a method of sensitizing comprising providing tabular silver bromoiodide grains or bromoiodide grains doped with Se and Iridium bringing said grains into contact with a benzothiazolium salt or hydrolyzed benzothiazolium salt comprising ##STR1## wherein R.sub.1 is hydrogen, alkyl of from 1 to 8 carbon atoms, or aryl of from 6 to 10 carbon atoms,R.sub.4 and R.sub.5 are independently hydrogen or halogen atoms, aliphatic or aromatic hydrocarbon moieties optionally linked through a divalent oxygen or sulfur atom; or cyano, amino, amido, sulfonamido, sulfamoyl, ureido, thioureido, hydroxy, --C(O)M, or --S(0).sub.2 M groups, wherein M is chosen to complete an aldehyde, ketone, acid, ester, thioester, amide, or salt;Y.sub.1 is a charge balancing counter ion; andQ is a substituent of the formula:--LCONHS0.sub.2 R, --LCONHS0.sub.2 NHCOR alkyl, sulfoalkyl, phosphoalkyl, hydroxyalkyl, or L--CONH.sub.

Abstract: A new method to improve the adhesion of a photoresist layer to an underlying dielectric layer in the fabrication of integrated circuit devices is described. Semiconductor device structures are provided in and on a semiconductor substrate. A dielectric layer is deposited over the semiconductor device structures wherein the depositing is performed in a deposition chamber. The dielectric layer is treated with a N.sub.2 O plasma treatment while the substrate is still within the deposition chamber. The substrate is removed from the deposition chamber. A photoresist mask is formed over the dielectric layer with an opening above the semiconductor device structures to be electrically contacted wherein the plasma treatment improves adhesion of the photoresist mask to the dielectric layer when compared to a conventional integrated circuit device. A contact opening is etched through the dielectric layer not covered by the mask to the semiconductor device structures to be electrically contacted.

Abstract: A negative photosensitive lithographic printing plate comprising an aluminum or organic polymer support having a surface roughness Ra of 0.25 to 0.60 .mu.m and having provided thereon a photopolymerizable photosensitive layer comprising a polymerizable monomer, a photopolymerization initiator and a sensitizer having an absorbing wavelength of 400 to 1,000 nm, wherein the support has a functional group on its surface at the side of the photosensitive layer, and wherein the functional group has an unsaturated bond which can undergo a radical addition reaction and an Si atom which covalently bonds to an aluminum atom, an Si atom, or a carbon atom in the support via an oxygen atom.

Abstract: A silver halide photographic material is disclosed, comprising a support having thereon at least one silver halide photographic emulsion layer of a silver halide emulsion, wherein the emulsion layer comprises monodisperse cubic silver halide grains which contain at least one metal atom of group VIII in the Periodic Table, and the silver halide emulsion is spectrally sensitized so as to have a sensitization maximum at a wavelength of 750 nm or more and further contains at least one of compounds represented by the following formulae (I-a), (I-b) and (I-c): ##STR1## wherein Z represents an alkyl group containing 1 to 18 carbon atoms, an aryl group containing 6 to 18 carbon atoms, or a heterocyclic group; Y represents atoms necessary to complete an aromatic ring containing 6 to 18 carbon atoms, or a hetero ring; M represents a metal atom or an organic cation; and n represents an integer of from 2 to 10.

Abstract: A method for forming upon a reflective layer, such as a reflective conducting layer, within an integrated circuit an Anti-Reflective Coating (ARC) which simultaneously possesses adhesion promotion characteristics for an organic layer to be formed upon the reflective layer. There is first formed upon a semiconductor wafer a reflective integrated circuit layer which may be a hydrophilic reflective integrated circuit layer or a hydrophobic integrated circuit layer. The semiconductor wafer is then immersed into and withdrawn from a Langmuir trough having formed therein a Langmuir-Blodgett (LB) monolayer film of a dye surfactant molecule ordered upon a surface of water. Upon withdrawing the wafer from the Langmuir trough, there is formed upon the reflective integrated circuit layer an ordered LB film of the dye surfactant molecule. The chromophore groups within the dye surfactant molecule and ordered LB film provide ARC characteristics to the reflective layer.

Abstract: The improved photoresist stripping liquid composition comprises (a) 2-30 wt % of a hydroxylamine, (b) 2-35 wt % of water, (c) 2-20 wt % of an amine having an acid dissociation constant (pKa) of 7.5-13 in aqueous solution at 25.degree. C., (d) 35-80 wt % of a water-soluble organic solvent and (e) 2-20 wt % of a corrosion inhibitor and the. method using this composition are capable of not only efficient removal of modified photoresist films that have been formed by dry etching, ashing, ion implantation and other treatments under hostile conditions but also effective prevention of the corrosion that would otherwise occur in substrates irrespective of whether they are overlaid with Al or Al alloy layers or Ti layers.

Abstract: The present invention discloses a lithographic printing plate developable on a lithographic printing press equipped with means for delivering lithographic ink and aqueous fountain solutions to the printing plate, the lithographic printing plate having in order (a) a printing plate substrate; and (b) a photoresist photohardenable upon imagewise exposure to actinic radiation, the photoresist comprising (i) a macromolecular organic binder; (ii) a photopolymerizable ethylenically unsaturated monomer having at least one terminal ethylenic group capable of forming a high polymer by chain-propagated polymerization, (iii) a polymerization initiator activatable by actinic radiation, and (iv) an amphoteric hydrogen bond-forming developability stabilizer, the hydrogen bond-forming developability stabilizer being non-volatile miscible in the photoresist and soluble in said lithographic ink and fountain solutions; the amphoteric hydrogen bond-forming developability stabilizer possessing a strong hydrogen bond-forming func

Abstract: A photosensitive sheet is composed of a plastic film, a subbing layer for nonelectrolytic plating provided thereon consisting of a hydrophilic resin having swelling property and fine particles of a metal or a metallic compound, a nonelectrolytically plated layer provided on the subbing layer and the photoresist layer provided on the nonelectrolytically plated layer. A metal pattern is performed by the steps of: exposing patternwise to light the photoresist layer of the photosensitive sheet, developing the exposed photoresist layer to form a resist pattern on the nonelectrolytically plated layer; forming an electrolytically plated layer on the nonelectrolytically plated layer in the area having no resist; superposing the photosensitive sheet on a substrate; and separating the plastic film from the substrate, keeping both the resist pattern and the electrolytically plated layer on the substrate, to form a metal pattern on the substrate.

Abstract: A photosensitive liquid solution is used to make thin films for use in integrated circuits. The photosensitive liquid solution contains a photo initiator, and solvent, and a mixture of metals bonded to free-radical-susceptible monomers. The metals are mixed in amounts corresponding to the desired stoichiometry of a metal oxide thin film that derives from the. The photosensitive liquid solution is applied to a substrate, soft baked, and exposed to ultraviolet radiation under a photo mask. The ultraviolet radiation patterns the soft-baked film through a free radical polymerization chain reaction. A solvent etch is used to remove the unpolymerized portion of the polymerized film. The remaining thin film pattern is annealed to provide a patterned metal oxide film.

Abstract: To present a manufacturing method of semiconductor device capable of preventing deactivation phenomenon of acid of chemically amplified resist when the foundation layer is a silicon nitride film, and obtaining a favorable resist shape, and enhanced in stability of resist patter. A silicon nitride film (3) is exposed to an oxygen atmosphere at 800.degree. to 1200.degree. C., and a thermal oxide film (4) in a thickness of about 40 to 50 angstroms (4 to 5 nm) is formed on the silicon nitride film (3), and then a resist layer (5) is formed. It hence eliminates the problems of instability of dimensions and shape of the silicon nitride film due to tail or under-cut formed in the sectional shape of the resist layer, and simultaneously solves the problem of instability of the resist pattern by peeling of the resist layer due to deterioration of adhesion between the resist layer and silicon nitride film.

Abstract: The present invention is a covered microchannel comprising: a) a substrate; b) an etched material adhered to the substrate; and c) a silicon-carbon material adhered to the etched material in such a manner to form a covered microchannel; wherein the silicon-carbon material comprises SiO.sub.1.8-2.4 C.sub.0.3-1.0 and H.sub.0.7-4.0 containing at least one of the following functional groups:--Si--O--Si--, --Si--CH.sub.2 --, --Si--H, or --Si--OH.The covered microchannel can be prepared by the steps of: a) coating a filler material onto a substrate having a groove, wherein the filler material covering the substrate fills the groove; b) removing filler material from the substrate but not from the groove; c) coating the substrate and the filler with an adhering, formable, capping material; and d) removing the filler from the groove. An etched laminate can also be used to prepare the covered microchannel.

Abstract: An assembly for high volume production of printed circuit cables consisting of: a plurality of printed circuit cables 10 cut from a polyimide base sheet 30 coated with a layer of copper and further coated with a photo-imaging material layer, wherein copper layer and photo-imaging material layer are photo-etched away at certain locations, a cover layer 34 applied on top of said printed circuit cables 10, cover layer 34 extending laterally from printed circuit cables 10, and forming tabs 16 at a plurality of locations, and a panel 20 having a plurality of apertures 15 cut therein, apertures 15 each dimensioned to receive a printed circuit cable 10 therein, and tabs 16 being connected to panel 20. A worknest 50 having certain areas 52 raised to different heights, worknest 50 adapted to be positioned under and provide support to the plurality of printed circuit cables 10. A cutting device 60 being adapted to cut tabs 16 thereby enabling printed circuit cables 10 to be removed from panel 20.