Abstract: A photographic element having a light sensitive layer and containing a dye of the formula (I): ##STR1## wherein: X.sub.1 and X.sub.2 each independently represents the atoms necessary to complete a 5- or 6-membered heterocyclic nucleus;X.sub.3 represents the atoms necessary to form a 5- or 6-membered ring structure, which may be substituted;R.sub.1 and R.sub.2 each independently represents a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group;R.sub.3 represents H, a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group;r and s independently are 0 or 1; andW represents one or more counterions as needed to balance the charge of the molecule.

Abstract: A method of producing a semiconductor substrate, particularly one having a buffer coat layer and sealed in a mold resin, is disclosed. The method patterns a polyimide film, etches an insulating film or passivation film using the resulting polyimide pattern as a mask, and then ashes the polyimide pattern by oxygen plasma to thereby obviate the influence of an etchant used for etching. Therefore, the method is capable of reducing the corrosion of portions where a metallic wiring pattern is exposed to the outside. Because the oxygen ashing step is followed by heat treatment, the influence of oxygen which would lower the adhesion strength between the polyimide pattern and a mold resin is eliminated. As a result, tight adhesion of the polyimide pattern to the mold resin is insured. Further, when a first heat treatment is effected after the patterning of the polyimide film, a solvent in the polyimide film is evaporated.

Abstract: The accuracy of photolithographic processing, particularly in forming small diameter through holes and/or trenches in a dielectric layer, is improved by polishing the wafer backside prior to photolithography. It was found that particles adhering to and/or scratches on the wafer backside resulting from prior processing steps cause inaccurate photolithographic processing, particularly at a submicron level. Backside polishing, as by chemical-/mechanical polishing, removes such adhering particles and/or scratches, thereby improving photolithographic accuracy.

Abstract: A printing plate material producing concave-convex pattern on the surface with a low laser energy output and having high scratch resistance is provided by formation of a photosensitive layer comprising a nitrocellulose, carbon black or other photoabsorber and a polyurethane elastomer on a support. The nitrocellulose has a nitrogen content of about 11 to 12.5% and a solution viscosity of about 1 to 1/8 second. The polyurethane elastomer is obtainable by allowing a polyester polyol to react with a polyisocyanate and a chain-extending agent. Relative to 100 parts by weight of the polyurethane elastomer, the amount of nitrocellulose is about 5 to 300 parts by weight and that of the photoabsorber is about 0.5 to 50 parts by weight. The photosensitive layer may have a glass transition temperature of not lower than 25.degree. C. The photosensitive layer may further comprise a plasticizer.

Abstract: A peel-developable lithographic printing plate is comprised of a substrate, a hydrophilic layer comprising a polymeric acid overlying the substrate, a radiation-sensitive image-forming layer overlying the hydrophilic layer and a stripping layer that is strippably adhered to the image-forming layer. The image-forming layer is comprised of a photo-polymerizable composition comprising a polymeric binder, a plurality of addition-polymerizable ethylenically-unsaturated compounds at least one of which possesses phosphorus-derived acidic functionality and a photopolymerization initiator. After imagewise exposure of the plate to activating radiation, the stripping layer is peeled from the image-forming layer with only the unexposed regions of the image-forming layer adhering thereto so as to reveal the underlying hydrophilic layer and thereby form a lithographic printing surface.

Abstract: To inhibit the migration of conductive layers in a multilayer chip carrier, e.g., a multilayer printed circuit board, an optically cured layer 13, which is an anti-migration layer, is formed in an insulating layer 12 located between a first conductive layer 8 and a second conductive layer 6. Such a structure is formed by thinning, e.g., grinding down, a first insulating layer, leaving about half the thickness of the first insulating layer. This first insulating layer is selectively optically irradiated with actinic radiation to form an optically cured layer. Via holes are etched into the non-irradiated portions of the first insulating layer. Thereafter, a second insulating layer is formed on the first insulating layer, and it too is selectively optically irradiated with actinic radiation. Via holes are etched into the non-irradiated portions of the second insulating layer, directly over the via holes in the first insulating layer, and the second insulating layer is also thinned.

Abstract: The invention relates to an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and uncondensed precursor polymer preferably terminated with an alkoxysilyl alkyl group.

Abstract: An image-forming element comprising a substrate, and an image-forming medium comprising (a) a compound absorbing at a first wavelength in the UV/blue region and (b) a dye absorbing at a second wavelength which is longer than the first wavelength, irradiation at said second wavelength bleaching absorption of said compound at said first wavelength, said element being free of thermally unstable urea and/or carbamate molecules.

Abstract: A friction charge-providing member for positively-chargeable toner is disclosed, which comprises a parent material having provided at least on the surface thereon a compound represented by formula (I) as a charge-controlling agent: ##STR1## wherein A and A' may be the same or different and each independently represents a hydrogen atom, a halogen atom, a nitro group, an alkyl group having 1 to 18 carbon atoms which may contain a substituent(s), an alkenyl group, an acyl group, a sulfonic acid group, a sulfamoyl group, a N-substituted sulfamoyl group, an alkylsulfonyl group having 1 to 5 carbon atoms, a carboxyl group, an alkylester group having 1 to 5 carbon atoms, a hydroxyl group, an alkoxyl group having 1 to 18 carbon atoms, an amino group, and a N-substituted amino group; B and B' may be the same or different and each independently represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 18 carbon atoms which may contain a substituent(s), an alkenyl group, an amino group, a N-substituted amin

Abstract: A silver halide photographic material comprising a support having thereon at least one silver halide emulsion layer containing silver halide grains, wherein the silver halide grains has been gold and chalcogen sensitized, and the partition rate of the gold in the silver halide grain side is not less than 10% and less than 40%, and a method for producing the silver halide photographic material.

Abstract: Disclosed is a method for forming a resist pattern in which a chemically amplified resist which has a photosensitive acid-generating agent with a catalytic function is used, has the step of: treating the surface of nitrided metal film or nitrided semimetal film deposited on a substrate by using a substance that reduces the basicity of a basic substance which exists on the surface of nitrided metal film or nitrided semimetal film or which is chemically coupled with the nitrided metal film or nitrided semimetal film.

Abstract: The invention provides a method which can suitably be used to mass-produce semiconductor devices. This method includes the following steps: a) providing a silicon surface with an anti-reflective layer which is made predominantly from a mixture of polyimide and polyamidic acid, b) providing the anti-reflective layer with a photosensitive layer which is subjected to patterned radiation and then developed thus forming an etch mask of the photosensitive layer and the anti-reflective layer, c) etching the freed parts of the silicon surface, and d) removing the etch mask. The method in accordance with the invention is characterized in that, prior to applying the anti-reflective layer, the silicon surface is exposed to an oxidative treatment in which, preferably, an aqueous solution of hydrogen peroxide with ammonia or sulphuric acid is used. By virtue of this measure in accordance with the invention, the undesired etching away of small silicon structures is precluded.

Abstract: A photographic element comprising a support having situated thereon at least one silver halide emulsion layer, the element containing an image modifying compound which comprises a magenta coupler moiety which upon reaction with oxidized color developing agent during processing forms a dye, said coupler moiety having attached to the coupling site, either directly or through a timing group, a 1,2,3-triazole moiety, the attachment being through the second nitrogen atom of the triazole moiety.

Abstract: A semiconductor manufacturer peels a photo-resist mask off by using organic alkaline solvent, and the residual alkaline solvent is neutralized with acid before a rinse in pure water so as to prevent a metal wiring from erosion due to strong alkaline solution produced from the residual organic alkaline solvent.

Abstract: Chip carrier packages, integrated circuits, wiring boards, and assemblies in computer systems are made having conductive adhesive interconnections. Electrically conductive polymer paste with metal particles and powders are used with photoimagable polymer films to form the interconnection structure. These articles are produced with screening and printing processes using a screening head and printing machine.

Abstract: A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity I.sub.sw =I.delta./I.sub.ave to 0.2 or smaller, where I.sub.ave is an average value of light intensity in the photoresist film, and I.delta. is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.

Abstract: A photo mask or other phototool is directly prepared by the imagewise illumination of an azo dye with a high intensity source of illumination so as to cause the removal of the dye from the imaging medium. Illumination is preferably carried out with a laser light source having an output at a wavelength of less than 530 nanometers and an energy density of at least 100 mj per centimeter squared. Disclosed are some specifically preferred azo dyes.

Abstract: A photographic element comprising at least one silver halide emulsion layer in which the silver halide is sensitized with a compound of the formula: ##STR1## wherein A is a silver halide adsorptive group that contains at least one atom of N, S, Se, or Te that promotes adsorption to silver halide, and L represents a linking group containing at least one C, N, S or O atom, k is 1 or 2, and XY is an fragmentable electron donor moiety in which X is an electron donor group and Y is a leaving group other than hydrogen, and wherein:1) XY has an oxidation potential between 0 and about 1-4 V; and2) the oxidized form of XY undergoes a bond cleavage reaction to give the radical X.sup..cndot. and the leaving fragment Y.In a preferred embodiment of the invention, the radical X.sup..cndot. has an oxidation potential .ltoreq.-0.7V.

Abstract: A photographic element comprises a support and at least one silver halide emulsion layer in which the silver halide is sensitized with a fragmentable electron donor of the formula X--Y, wherein X is an electron donor moiety and Y is a leaving group other than hydrogen, and wherein:1) X--Y has an oxidation potential between 0 and about 1.4 V; and2) the oxidized form of X--Y undergoes a bond cleavage reaction to give the radical X.sup..cndot. and the leaving fragment Y.In a preferred embodiment of the invention, the radical X.sup..cndot. has an oxidation potential .ltoreq.-0.7V.

Abstract: A multi-layered circuit substrate and a manufacturing method thereof comprising the steps of coating the upper surface of a substrate with a photosensitive insulating layer; exposing and developing the photosensitive insulating layer to form a photosensitive insulating layer of predetermined pattern and pattern spaces; forming a conductive layer by printing a conductive ink in the pattern spaces; and forming a plurality of layers by performing the previous steps, each layer comprising a photosensitive insulating layer of predetermined pattern and pattern spaces and a conductive layer formed in the pattern spaces.