Abstract: Photovoltaic devices and methods of making the same, are disclosed herein. The cell comprises a photovoltaic device that comprises a first electrically conductive layer comprising a photo-sensitized electrode; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution comprising at least one asphaltene fraction, wherein the metal-oxide particles are optionally dispersed in a surfactant; and a second electrically conductive layer comprising a counter-electrode, wherein the second electrically conductive layer comprises one or more conductive elements comprising carbon, graphite, soot, carbon allotropes or any combinations thereof.

Abstract: A back contact solar cell comprises an active semiconductor absorber for use in a back contact solar cell having a light capturing front side and a backside opposite the light capturing front side. A first interdigitated metallization is positioned over the backside of the active semiconductor absorber. The first interdigitated metallization forming base and emitter contact metallization of the back contact solar cell. A backplane is positioned over the backside of the active semiconductor absorber and the first interdigitated metallization. A second interdigitated metallization is positioned over the backplane. The second interdigitated metallization is connected to the first interdigitated metallization for extracting photovoltaic power from the active semiconductor absorber. The second interdigitated metallization has base and emitter busbars over the backplane for electrical connection.

Abstract: A thermally driven power generator having a base and a heat source placed within the base. The thermally driven power generator further having a heat collector is adapted to collect the heat from the heat source through a plurality of fins and a heat sink adapted to release heat into the environment. The thermally driven power generator further having a thermal electric power generation module is sandwiched between the heat collector and a heat sink; the thermal electric power generation module is designed to convert heat collected by the heat collector to electrical power. A tray assembly for a thermally driven power generator, the tray assembly having: a transport tray; and a magnetic element integrated with the transport tray, the magnetic element designed to attract a wick keeper of a candle such that the wick is held in place.

Abstract: A single-step wet etch process is provided to isolate multijunction solar cells on semiconductor substrates, wherein the wet etch chemistry removes semiconductor materials nonselectively without a major difference in etch rate between different heteroepitaxial layers. The solar cells thus formed comprise multiple heterogeneous semiconductor layers epitaxially grown on the semiconductor substrate.

Abstract: The present invention provides a photovoltaic device having an optical component that is capable of concentrating solar energy and method of making the same. More specifically, the present invention provides for an on-line produced patterned glass component that is capable of concentrating solar energy and allows for significantly less photovoltaic material to be used in a photovoltaic device. The present invention also provides for an on-line method of making the patterned glass and a method for making a photovoltaic device incorporating the patterned glass described herein.

Abstract: A photovoltaic device includes a silicon substrate of a first conduction type that includes an impurity diffusion layer on one surface side; a light-receiving-surface side electrode that includes a plurality of grid electrodes electrically connected to the impurity diffusion layer; and a back-surface side electrode formed on the other surface side of the silicon substrate wherein the impurity diffusion layer includes a first impurity diffusion layer and a second impurity diffusion layer, and wherein the first impurity diffusion layer is formed so that a direction perpendicular to a longitudinal direction of the grid electrodes is a longitudinal direction thereof, and so that an area ratio of the first impurity diffusion layer to a band region is equal to or lower than 50%.

Abstract: A thin film photoelectric converter including a transparent conductive layer, a laser light absorption layer, a back electrode layer, a semiconductor photoelectric conversion layer and a transparent electrode layer stacked on a translucent substrate. The laser light absorption layer is parted into regions by first kind parting line grooves, and the photoelectric conversion layer is parted into regions by third kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer and the photoelectric conversion layer. The transparent electrode layer is parted into regions by fourth kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer, the photoelectric conversion layer and the transparent electrode layer. A receiving side transparent electrode region of one cell is electrically connected to a back electrode region of an adjacent cell through the first kind groove, the transparent conductive layer and the third kind groove.

Abstract: The present invention provides a solar cell module which keeps backing film from being scratched and prevents the occurrence of scratches. The solar cell module (10) of the present invention is provided with a surface protecting member (12), backing film (13), a plurality of solar cells (11) arranged between the surface protecting member (12) and the backing film (13) and electrically connected by means of wiring members (16), a filler material (14) for sealing the solar cells (11) between the surface protecting member (12) and the backing film (13), and transition wiring (20) electrically connected with the wiring members (16). Here, at least the end portion of transition wiring (20) positioned in a corner portion of the solar cell module is arranged so as to be positioned closer to the surface protecting member (12) than other portions of the transition wiring (20).

Abstract: A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.

Abstract: An airborne photovoltaic solar system, comprising a parabolic reflector-concentrator (110, 1210), spread by wind, a solar panel (102, 1202) raised to high altitude using at least one lighter than air balloon (103, 1201), tracking the sun using aerodynamic surfaces and/or changes in buoyancy, relying on wind and/or cold air to cool the solar panel in one embodiment, as well as related methods and variations and alternatives.

Abstract: The present invention has an object to provide a photoelectric conversion device which can be manufactured through a simple manufacturing process, achieve photoelectric conversion over a wide range of wavelength regions, and attain high photoelectric conversion efficiency even in the infrared wavelength region, a photodetection device, and a photodetection method.

Abstract: A method of forming a photovoltaic device that includes providing an absorption layer of a first crystalline semiconductor material having a first conductivity type, and epitaxially growing a second crystalline semiconductor layer of a second conductivity type that is opposite the first conductivity type. The first conductivity type may be p-type and the second conductivity type may be n-type, or the first conductivity type may be n-type and the second conductivity type may be p-type. The temperature of the epitaxially growing the second crystalline semiconductor layer does not exceed 500° C. Contacts are formed in electrical communication with the absorption layer and the second crystalline semiconductor layer.

Abstract: The present invention provides a solar cell including a substrate, a first front bus, and a first rear bus. The substrate has a front surface and a rear surface. The first front bus is located on the front surface of the substrate along a first direction for collecting current generated by the substrate, and for providing a first front contact electrode. The first rear bus is located on the rear surface of the substrate along a second direction different from the first direction for collecting current generated by the substrate, and for providing a first rear contact electrode.

Abstract: A solar cell has a passivation film formed on a crystalline silicon substrate that has at least a p-n junction, and an electrode formed by printing and heat-treating a conductive paste. The solar cell has a first electrode comprising an extraction electrode, which extracts photogenerated carriers from the silicon substrate, formed so as to contact the silicon substrate and a second collector electrode, which collects the carriers collected at the extraction electrode, formed so as to contact the first electrode. Other than the point of contact between the first electrode and the second electrode, at least, the second electrode contacts the silicon substrate only partially or not at all. By leaving the passivation film between the collector electrode and the silicon, either completely or partially, the solar cell reduces charge losses at electrode/silicon interfaces, improves the short-circuit current and open voltage, and yields improved characteristics.

Abstract: A silicon solar cell having a silicon substrate includes p-type and n-type emitters on a surface of the substrate, the emitters being doped nano-particles of silicon. To reduce high interface recombination at the substrate surface, the nano-particle emitters are preferably formed over a thin interfacial tunnel oxide layer on the surface of the substrate.

Abstract: Providing a dye-sensitized solar cell having high durability and thermal resistance, and preventing elution of a platinum group catalyst from a catalytic electrode: by surface-treating the catalytic electrode with (a) a specific sulfur material having a molecular weight of 32 to 10,000 containing a sulfur atom having an oxidation number of ?2 to 0, (b) another specific sulfur material containing no sulfur atom having an oxidation number of ?2 to 0, but containing a sulfur atom having an oxidation number of +1 to +4 [with the proviso that the sulfur material (b) is such a material that a surface of the surface-treated catalyst electrode has a photoelectron peak within a binding energy range of 161 to 165 eV in an X-ray photoelectron spectrum], or (c) a mixture of the sulfur materials (a) and (b); and/or by adding the sulfur material into the electrolyte layer.

Abstract: A photoelectric conversion module in which an output voltage defect is suppressed is obtained by forming in parallel over a substrate n number (n is a natural number) of integrated photoelectric conversion devices each including a plurality of cells that are connected in series, and electrically connecting in parallel n?1 number or less of integrated photoelectric conversion devices with normal electrical characteristics and excluding an integrated photoelectric conversion device with a characteristic defect such as a short-circuit between top and bottom electrodes or a leak current due to a structural defect or the like formed in a semiconductor layer or the like.

Abstract: A dye-sensitized solar cell including an inorganic dye containing all of Pb, Hg and S as a photo-sensitive dye and a manufacturing method of the same are provided.

Abstract: Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires are described. The thermal conductivity and the thermoelectric power are controlled substantially independently of the electrical conductivity of the nanowires by controlling dimensions and doping, respectively, of the nanowires. A thermoelectric device comprising p-doped and n-doped semiconductor nanowire thermocouples is also shown, together with a method to fabricate alternately p-doped and n-doped arrays of silicon nanowires.

Abstract: The invention relates to a thermoelectric device, comprising a first circuit (1), called hot circuit, through which a first fluid can flow, and, a second circuit (2), called cold circuit, through which a second fluid can flow at a temperature lower than that of the first fluid, and elements (3p, 3n), called thermoelectric elements, that can be used to generate an electric current in the presence of a temperature gradient. According to the invention, it comprises fins (5f) in a heat exchange relationship with said hot circuit (1) and/or said cold circuit (2), the thermoelectric elements (3p, 3n) being in contact at least with said fins (5f), said fins having tracks (32) for conducting the current generated by said thermoelectric elements.