Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

Abstract: A film-forming device that includes a cylindrical chamber capable of maintaining vacuum therein, a workpiece holder that is constructed to align and hold workpieces to be processed in multiple stages such that main surfaces of the workpieces are oriented in a vertical direction relative to a central axis of the chamber, a deposition material supply pipe, a modifier supply pipe, a carrier gas supply pipe, and an exhaust mechanism, wherein in a cross section of the chamber in a direction parallel to the main surfaces of the workpieces, the exhaust mechanism is located on a side opposite to an opening direction of gas outlets of the deposition, modifier, and carrier gas supply pipes, and a total gas flow from the deposition, modifier, and carrier gas supply pipes is symmetric about a centerline of the chamber.

Abstract: A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

Abstract: A placing table on an embodiment includes a supporting member and a base. The supporting member includes a placing region provided with a heater, and an outer peripheral region surrounding the placing region. The base includes a first region supporting the placing region thereon, and a second region surrounding the first region. In the second region, through holes are formed. Wirings electrically connected to the heater passes through the through holes of the second region.

Abstract: A gas distribution unit in connection with an atomic layer deposition reactor includes an inlet surface, an outlet surface, a process gas channel extending through the gas distribution unit and being open to the inlet surface and to the outlet surface, a barrier gas inlet fitting connected to the process gas channel between the inlet surface and the outlet surface for supplying barrier gas to the process gas channel, and a barrier gas outlet fitting connected to the process gas channel between the inlet surface and the barrier gas inlet fitting for discharging barrier gas from the process gas channel.

Abstract: A substrate processing apparatus includes a substrate processing unit, a partition wall, a first gas supply, and a second gas supply. The substrate processing unit performs a liquid processing on a substrate. The partition wall separates a first space defined from a carry-in/out port through which the substrate is loaded to the substrate processing unit, and a second space other than the first space. The first gas supply is connected to the partition wall, and supplies an atmosphere adjusting gas to the first space. The second gas supply is connected to a place different from the first gas supply in the partition wall, and supplies an atmosphere adjusting gas to the first space.

Abstract: Methods and systems for organic vapor jet deposition are provided, where an exhaust is disposed between adjacent nozzles. The exhaust may reduce pressure buildup in the nozzles and between the nozzles and the substrate, leading to improved deposition profiles, resolution, and improved nozzle-to-nozzle uniformity. The exhaust may be in fluid communication with an ambient vacuum, or may be directly connected to a vacuum source.

Abstract: A heat treatment apparatus includes: a vertically-extended processing container configured to accommodate a substrate; a gas supply including a gas supply pipe that extends along an inner wall surface of the processing container in a vertical direction; a heater having a heat insulating material provided around the processing container, and a heating element provided along the inner wall surface of the heat insulating material; and a cooler having a fluid flow path formed outside the heat insulating material, and a blowing-out hole penetrating the heat insulating material and configured to blow out a cooling fluid toward the gas supply pipe, the blowing-out hole having one end that communicates with the fluid flow path and a remaining end that communicates with a space between the processing container and the heat insulating material. A plurality of blowing-out holes is provided in the gas supply pipe in a longitudinal direction.

Abstract: A method of densifying an annular porous structure comprises stacking a plurality of annular porous structures to form a porous structure stack in a graphite susceptor, wherein the graphite susceptor is disposed within a vessel. The method includes disposing a graphite panel within the graphite susceptor and located radially inward from the porous structure stack. The method includes flowing a reactant gas into the vessel.

Abstract: A system and method for improved atomic layer deposition. The system includes a top showerhead plate, a substrate and a bottom showerhead plate. The substrate includes a porous microchannel plate and a substrate holder is positioned in the system to insure flow-through of the gas precursor.

Abstract: Embodiments described herein relate to apparatus and techniques for mechanical isolation and thermal insulation in a process chamber. In one embodiment, an insulating layer is disposed between a dome assembly and a gas ring. The insulating layer is configured to maintain a temperature of the dome assembly and prevent thermal energy transfer from the dome assembly to the gas ring. The insulating layer provides mechanical isolation of the dome assembly from the gas ring. The insulating layer also provides thermal insulation between the dome assembly and the gas ring. The insulating layer may be fabricated from a polyimide containing material, which substantially reduces an occurrence of deformation of the insulating layer.

Abstract: A thin film processing device includes a showerhead for performing thin film processing for a substrate on a susceptor that moves along a transport track, and one or more transporters for supporting the susceptor. The transporters can transport the susceptor along the transport track while floating with respect to the track and not contacting the track, and can also control the height of the susceptor so as to adjust the distance from the substrate to the showerhead; and a transporter control system for controlling the transporters.

Abstract: A valve device includes: valves configured to control a flow of processing gases supplied to a process vessel; a housing in which first flow paths through which the processing gases flow are formed; a heat diffuser configured to cover the housing and diffuse heat of the housing; a heating part configured to cover the housing covered with the heat diffuser and heat the housing via the heat diffuser; a supply configured to supply a coolant to a second flow path formed between the housing and the heat diffuser; and a controller configure to control the heating part to heat the housing to a first temperature when a predetermined process is performed on a target substrate, and before a start of a cleaning process of the process vessel, control the heating part to stop heating of the housing and control the supply to supply the coolant to the second flow path.

Abstract: The present disclosure relates to methods and apparatus for an atomic layer deposition (ALD) chamber. In one embodiment, a lid assembly is provided that includes a multi-channel showerhead having a plurality of first gas channels and a plurality of second gas channels that are fluidly isolated from each of the first gas channels, and a flow guide coupled to opposing sides of the multi-channel showerhead, each of the flow guides being fluidly coupled to the plurality of second gas channels.

Abstract: A device includes a nozzle including a discharge end for discharging a fluid, a shutter plate including an aperture, the shutter plate positioned at the discharge end of the nozzle, a plurality of tethers coupled to the shutter plate, and a plurality of electrostatic actuators. Each of the plurality of electrostatic actuators are coupled to one or more of the plurality of tethers. The plurality of electrostatic actuators are configured to move the shutter plate between an open position and a closed position relative the discharge end of the nozzle. In the open position, the aperture is in fluid communication with the discharge end of the nozzle to permit fluid from the discharge end of the nozzle to flow through the aperture. In the closed position, at least a portion of the shutter plate inhibits fluid from the discharge end of the nozzle from flowing through the aperture.

Abstract: Disclosed is an apparatus for distributing gas which is capable of uniformly injecting processing gas into a plurality of gas passages being communicated with a plurality of gas distribution holes, and an apparatus for processing substrate including the same, wherein the apparatus for distributing gas may include a body including a plurality of gas passages connected with a plurality of gas distribution holes for distributing processing gas; and at least one gas injection module connected with at least one lateral surface of the body and respectively communicated with the plurality of gas passages, wherein the gas injection module firstly buffers the processing gas supplied from the external, secondly buffers the firstly buffered processing gas, and injects the buffered processing gas into the plurality of gas passages.

Abstract: A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.

Abstract: A film deposition apparatus includes a process chamber, a rotary table, a first reaction gas supply part disposed in a first process region and configured to supply a first reaction gas, a second reaction gas supply part disposed in a second process region apart from the first reaction gas supply part in a circumferential direction of the rotary table and configured to supply a second reaction gas, and separation gas supply parts disposed in a separation region between the first reaction gas supply part and the second reaction gas supply part and configured to supply a separation gas for separating the first reaction gas and the second reaction gas. The separation gas supply parts are configured to supply, in addition to the separation gas, an additive gas for controlling adsorption of the first reaction gas or for etching a part of material components included in the first reaction gas.

Abstract: A sealing device configured for use in a vacuum chamber between a reaction region of the vacuum chamber and an exhaust port includes a ring-shaped body with an upper surface and a lower surface. A distance between the upper surface and the lower surface of the sealing device is a thickness of the ring-shaped body. The thickness of the ring-shaped body differs along a circumference of the ring-shaped body such that the ring-shaped body has a wedge shape. The thickness of the ring-shaped body, around its circumference is dependent upon a structure of the exhaust port.

Abstract: Embodiments of the disclosed subject matter provide a device including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, and a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel.