Abstract: A solar energy collection system can include support devices configured to accommodate misalignment of components during assembly. For example, the system can include piles fixed to the earth and an adjustable bearing assembly at the upper end of the pile. The adjustable bearing assembly can include at least one of a vertical adjustment device, a lateral adjustment device and an angular adjustment device. The solar energy collection system can also include a plurality of solar energy collection device pre-wired together and mounted to a support member so as to form modular units. The system can also include enhanced supports for wire trays extending between rows of solar energy collection devices.

Abstract: An optical system for light energy concentration may comprise a light concentrator including two or more light-converging elements, a light splitting element to receive the converging light from the light-converging elements and to produce light having a first spectral component and light having a second spectral component, and a light directing element to direct the light having the first spectral component through a light guide and to direct the light having the second spectral component to a location external to the light guide.

Abstract: In an example, the present invention provides a solar tracker apparatus. In an example, the apparatus comprises a center of mass with an adjustable hanger assembly configured with a clam shell clamp assembly on the adjustable hanger assembly and a cylindrical torque tube comprising a plurality of torque tubes configured together in a continuous length from a first end to a second end such that the center of mass is aligned with a center of rotation of the cylindrical torque tubes to reduce a load of a drive motor operably coupled to the cylindrical torque tube. Further details of the present example, among others, can be found throughout the present specification and more particularly below.

Abstract: This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.

Abstract: A wire management device is disclosed. The device comprises a clip comprising an upper planar member and a lower planar member, each planar member having an inner and outer surface, wherein the inner surface of the upper planar member includes a post extending toward the inner surface of the lower planar member, a stem extending from the outer surface of the lower planar member, the stem including two outwardly-extending flanges, each of the first and second outwardly-extending flanges including an edge portion extending toward the outer surface of the lower planar member, and a transverse passage extending along the outer surface of the lower planar member, the transverse passage extending across the stem, wherein the stem has a recessed portion along the transverse passage.

Abstract: An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the butler layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.

Abstract: Systems and methods are operable to generate electric power from heat. An exemplary direct thermal electric converter embodiment includes at least a first recombination material having a first recombination rate, a second recombination material adjacent to the first recombination material and having a second recombination rate, wherein the second recombination rate is different from the first recombination rate, and a third recombination material adjacent to the second recombination material and having a third recombination rate substantially the same as the first recombination rate. Application of heat generates at least first charge carriers that migrate between the first recombination material and the second recombination material, and generates at least second charge carriers that migrate between the third recombination material and the second recombination material. The migration of the first charge carriers and the migration of the second charge carriers generates an electrical current.

Abstract: A method for manufacturing a thermoelectrical device includes providing a substrate and also forming at least one deep trench into the substrate. The method further includes forming at least one thermocouple which comprises two conducting paths, wherein a first conducting path comprises a first conductive material and a second conducting path comprises a second conductive material, such that at least the first conducting path is embedded in the deep trench of the substrate.

Abstract: A bipolar solar cell includes a backside junction formed by a silicon substrate and a first doped layer of a first dopant type on the backside of the solar cell. A second doped layer of a second dopant type makes an electrical connection to the substrate from the front side of the solar cell. A first metal contact of a first electrical polarity electrically connects to the first doped layer on the backside of the solar cell, and a second metal contact of a second electrical polarity electrically connects to the second doped layer on the front side of the solar cell. An external electrical circuit may be electrically connected to the first and second metal contacts to be powered by the solar cell.

Abstract: A solar cell can include a built-in bypass diode. In one embodiment, the solar cell can include an active region disposed in or above a first portion of a substrate and a bypass diode disposed in or above a second portion of the substrate. The first and second portions of the substrate can be physically separated with a groove. A metallization structure can couple the active region to the bypass diode.

Abstract: A nanomesh phononic structure includes: a sheet including a first material, the sheet having a plurality of phononic-sized features spaced apart at a phononic pitch, the phononic pitch being smaller than or equal to twice a maximum phonon mean free path of the first material and the phononic size being smaller than or equal to the maximum phonon mean free path of the first material.

Abstract: Disclosed is a solar battery which: is made from a silicon semiconductor; has a high quantum-conversion efficiency; requires a small number of production steps during manufacturing; and is capable of being recycled in view of environmental load and material recycling. Specifically, a solar battery according to an embodiment of the present invention has a basic structure of a P—SiN—N junction in which minute silicon clusters are inserted in a P—N junction, and includes a quantum dot layer having a multiple energy level structure consisting of an energy level of a valence band and an energy level of a conduction band, and intermediate energy levels located between both the bands. The quantum dot layer is composed by periodically arranging silicon quantum dots consisting of silicon clusters with an average particle diameter of 2.5 nm or less and an inter-quantum-dot distance of 1 nm or less.

Abstract: The present invention generally provides multistage thermoelectric coolers and methods for their fabrication. For example, in one aspect, a multistage thermoelectric cooler is disclosed that includes at least two cooling stages, each of which comprises a p-type leg portion and an n-type leg portion coupled to form a p-n junction. The p-n junctions of the two stages are thermally and electrically coupled such that at least a portion of a current flowing, during operation of the device, through one stage is coupled to the other. Further, at least one of the p- or n-type leg portions of one stage forms a unitary structure with a corresponding p- or n-type leg portion of the other stage.

Abstract: Manufacture for an improved stacked-layered thin film solar cell. Solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.

Abstract: A solar cell includes an integrated structure. The integrated structure includes a first electrode layer, a P-type silicon layer, an N-type silicon layer, and a second electrode layer arranged in the above sequence. At least one curved surface is defined on the integrated structure. The integrated structure includes a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer; and a photoreceptive surface exposing the P-N junction. The photoreceptive surface is one the at least one curved surface of the integrated structure and is configured to receive incident light beams.

Abstract: A solar cell includes an integrated structure and a reflector. The integrated structure includes a first electrode layer, a P-type silicon layer, an N-type silicon layer, and a second electrode layer arranged in the above sequence; a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer; a photoreceptive surface exposing the P-N junction. The photoreceptive surface is on a curved surface of the integrated structure and is configured to receive incident light beams. The reflector is on another side of the integrated structure, opposite to the photoreceptive surface.

Abstract: A dye sensitized solar cell, wherein a compacting compound whose molecular structure comprises a terminal group, a hydrophobic part and an anchoring group is co-adsorbed together with the dye on the semi-conductive metal oxide layer of the photoanode, forming a dense mixed self-assembled monolayer.

Abstract: A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

Abstract: Materials and methods for fabrication of rear tabbing, front busbar, and fine grid line layers for silicon based photovoltaic cells are disclosed. Materials include conductive metallization pastes that contain core-shell nickel based particles.

Abstract: Disclosed is a modularized AMTEC cell which does not require a separate collector by using a metal support as an internal electrode, has durability and stability even at a high temperature and a high pressure, very easily joins the cell to a housing by inserting the cell into an insulating portion and sealing, minimizes the number of the parts and expands easily the system scale through the serial-parallel structure.