Abstract: A method for improving a nominal output of a thin-film solar module with a laminated composite of two substrates which are connected to each other by at least one adhesive layer and between which there are solar cells connected in series is described. The method relates to solar cells being illuminated with an artificial light with an irradiance of at least 5 kW/m2.

Abstract: Solar cell receiver subassemblies for use in a concentrating solar system that concentrates the solar energy onto a solar cell for converting solar energy to electricity. The subassemblies may include an optical element defining an optical channel and forming an optical path. The subassemblies may also include a solar cell receiver comprising a support and a solar cell mounted on the support adjacent to the optical element and in the optical path of the optical channel. The solar cell may include one or more III-V compound semiconductor layers and may be capable of generating in excess of 20 watts of peak DC power. The subassemblies may also include a heat shield mounted over and peripherally adjacent to exterior sides of the optical element to cover and block concentrated light from reaching a surface of the support adjacent to the solar cell.

Abstract: A solar tracker is provided to fix an altitude angle until the altitude of the sun secedes from a predetermined range after matching the altitude through once driving of one shaft that tracks the altitude angle and to drive only the other shaft that tracks an east-west azimuth angle in daily repetition in a state where the altitude angle of the sun, which is repeatedly changed according to seasons of the year in the range of the winter solstice having the lowest altitude angle and the summer solstice having the highest altitude angle, has an extremely small diurnal change, whereas the azimuth angle of the sun is repeatedly changed in one direction, that is, from sunup to sundown, in a day. Accordingly, consumption of firm power of a driving unit for tracking the sun can be minimized, and the operating and management costs of the device can be reduced.

Abstract: A solar cell according to an embodiment includes a pattern layer arranged on a substrate and including a uneven pattern; a back electrode arranged on the pattern layer; a light absorption layer arranged on the back electrode; a buffer layer on the light absorption layer; and a front layer arranged on the buffer layer. The method fabricating a solar cell according to an embodiment includes forming a pattern layer including a uneven pattern on a substrate; forming a back electrode on the pattern layer; forming a light absorption layer on the back electrode; forming a buffer layer on the light absorption layer; and forming a front electrode on the buffer layer.

Abstract: A device containing a solar cell is provided in the form of a stacked package that has a planar arrangement of conductive laminates at or below the surface of a heat sink. The planar alignment allows placement of electrical connections below the surface of the heat sink and reduces the vertical profile of the device, making it easier to be hermetically sealed. In specific embodiments the solar cell substrate is embedded within the heat sink during the manufacturing phase, eliminating the need for a thermally conductive substrate between the solar cell and the heat sink.

Abstract: A solar cell having a first subcell including a germanium (Ge) substrate having a diffusion region doped with n-type dopants including phosphorus and arsenic, wherein the upper portion of such diffusion region has a higher concentration of phosphorus (P) atoms than arsenic (As) atoms, and a second subcell including a layer of either gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) disposed over the substrate.

Abstract: A dye-sensitized solar cell module comprising: a plurality of electrically series-connected solar cells having a first conductive layer formed on an insulating substrate; a photoelectric conversion device formed on the first conductive layer; and a second conductive layer formed on the photoelectric conversion device, wherein the photoelectric conversion device has a photoelectric conversion layer having a porous semiconductor layer adsorbing a dye, a carrier transporting layer and a catalyst layer and the dye-sensitized solar cell module is characterized in that the second conductive layer of the above-described one solar cell contacts the first conductive layer of an adjacent another solar cell and the photoelectric conversion device of the above-described adjacent another solar cell contacts the second conductive layer of the above-described one solar cell.

Abstract: Provided is a thin film photoelectric conversion device with maximized output characteristic, which is achieved by improving an uneven current value of a photoelectric conversion cell caused by an uneven film thickness and an uneven film quality of a photoelectric conversion semiconductor layer, which may be generated in scaling up an integrated-type thin film photoelectric conversion device. The thin film photoelectric conversion device includes: a substrate, a transparent electrode layer, a photoelectric conversion unit, and a back electrode layer. An increasing rate ?Zt of the film thickness Zt of the transparent electrode layer along X and an increasing rate ?Zs of the film thickness Zs of the photoelectric conversion unit along X have different signs, wherein one line segment in a parallel direction to a main surface of the substrate is taken as X?.

Abstract: The disclosure relates to multiple quantum well (MQW) structures for intrinsic regions of monolithic photovoltaic junctions within solar cells which are substantially lattice matched to GaAs or Ge. The disclosed MQW structures incorporate quantum wells formed of quaternary InGaAsP, between barriers of InGaP.

Abstract: A solar energy harvesting system including a sunlight concentrating member (e.g., a lens array) for focusing direct sunlight at predetermined focal points inside a waveguide containing a stimuli-responsive material (SRM) that is evenly distributed throughout the waveguide material such that the SRM assumes a relatively high transparency state away from the focused sunlight, and small light-scattering portions of the SRM change to a relatively opaque (light scattering) state only in focal zone regions adjacent to the concentrated sunlight. The outer waveguide surfaces are locally parallel (e.g., planar) and formed such that sunlight scattered by the light-scattering SRM portions is transmitted by total internal reflection through the remaining transparent waveguide material, and outcoupled to one or more solar energy receivers (e.g., PV cells) that are disposed outside the waveguide (e.g., along the peripheral edge).

Abstract: An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the buffer layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.

Abstract: Methods of fabricating multijunction solar cells that may include providing a substrate, and depositing a nucleation first layer over and directly in contact with the substrate. The methods may also include depositing a second layer containing an arsenic dopant over the nucleation layer. The nucleation layer may serve as a diffusion barrier to the arsenic dopant such that diffusion of the arsenic dopant into the substrate is limited in depth by the nucleation layer. The methods may also include depositing a sequence of layers over the second layer forming at least one solar subcell.

Abstract: A stacked package for a solar cell is provided with a planar arrangement of conductive laminates on the surface of the heat sink. The layered conductive laminate offers multi-directional orientation of the solar cell within the package by eliminating any orientation requirements between the chip and the substrate, and offers multiple options for placement of standard or flipped bypass diodes. The packaged solar cell of the invention provides a smaller horizontal and vertical profile than standard solar cell packages, making it easier to hermetically seal the package.

Abstract: The disclosure provides a thermoelectric composite sandwich structure with an integrated honeycomb core and method for making. The thermoelectric composite sandwich structure comprises two prepreg composite face sheets and an integrated honeycomb core assembled between the face sheets. The honeycomb core comprises a plurality of core elements bonded together with a core adhesive. Each core element has a first side substantially coated with a negative Seebeck coefficient conductive material having a plurality of first spaced gaps, and each core element further has a second side substantially coated with a positive Seebeck coefficient conductive material having a plurality of second spaced gaps. The honeycomb core further comprises a plurality of electrical connections for connecting in series the first side to the second side. A temperature gradient across the honeycomb core generates power.

Abstract: A thermoelectric device and a method of manufacturing the same are provided. The thermoelectric device may include a nanowire having nanoparticles which are disposed on one of an exterior surface of the nanowire and an interior of the nanowire.

Abstract: A micron gap thermo-photo-voltaic device including a photovoltaic substrate, a heat source substrate, and a plurality of spacers separating the photovoltaic substrate from the heat source substrate by a submicron gap. Each spacer includes an elongated thin-walled structure disposed in a well formed in the heat source substrate and having a top surface less than a micron above the heat source substrate. Also disclosed are methods of making the spacers.

Abstract: A thermoelectric bias voltage generator having a substrate, an active device formed in a semiconductor region of the substrate, and a thermoelectric junction disposed on the substrate and connected to the active device to provide the bias voltage for the active device.

Abstract: A solar receiver unit including a housing defining a recess, a cell assembly received in the recess, the cell assembly including a solar cell, and a light shield received in the recess and including a body and at least two tabs, the body defining a window therein, the tabs extending outward from the body and being engaged with the recess, wherein the window is aligned with the solar cell.

Abstract: A thermoelectric semiconductor component, comprising an electrically insulating substrate surface and a plurality of spaced-apart, alternating p-type (4) and n-type semiconductor structural elements (5) which are disposed on said surface and which are connected to each other in series in an electrically conductive manner alternatingly at two opposite ends of the respective semiconductor structural elements by conductive structures, in such a way that a temperature difference (2?T) between the opposite ends produces an electrical voltage between the conductive structures or that a voltage difference between the conductive structures (7, 9; 13, 15) produces a temperature difference (2?T) between the opposite ends, characterized in that the semiconductor structural elements have a first boundary surface between a first and a second silicon layer, the lattice structures of which are considered ideal and are rotated by an angle of rotation relative to each other about a first axis perpendicular to the substrate su

Abstract: A solar cell includes a p-n junction formed by joining a p-type semiconductor and an n-type semiconductor. The p-type semiconductor is a chalcopyrite compound semiconductor with a band gap of 1.5 eV or more within which an intermediate level exists with a half bandwidth of 0.05 eV or more. The intermediate level is different from an impurity level. The chalcopyrite compound semiconductor includes a first element having first electronegativity of 1.9 or more in Pauling units, the first element occupying a lattice site of the semiconductor. A portion of the first element is substituted with a second element having second electronegativity different from the first electronegativity, the second element being a congeneric element of the first element. The intermediate level is created by substituting the first element with the second element.