Abstract: A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.

Abstract: A correction circuit is provided, which may reduce dullness of a light output waveform due to wavelength detuning. The correction circuit includes an RC time constant circuit. The RC time constant circuit is used to correct a waveform of a current pulse outputted from a current source, the current source driving a surface-emitting semiconductor laser in a pulsed manner, so that a pulse waveform of light output of the semiconductor laser is approximately a rectangle.

Abstract: A laser diode capable of performing self-pulsation operation, and capable of sufficiently reducing the coherence of laser light and stably obtaining low-noise laser light is provided. A laser diode includes: a laser chip including at least one laser stripe which extends in a resonator length direction between a first end surface and a second end surface opposed to each other, in which the laser stripe includes a gain region and a saturable absorption region in the resonator length direction, and the width of the laser stripe in the saturable absorption region is larger than the width of the laser stripe in the gain region.

Abstract: A fan for circulating laser gas in a gas laser, the fan having a shaft which is supported by at least one radial bearing and at least one axial gas bearing. The axial gas bearing has at least two rotating bearing faces, one or both being structured with a groove pattern, and at least two stationary bearing faces that are arranged at both sides of a plate.

Abstract: A gain-module for use in an OPS-laser includes a multilayer semiconductor gain-structure surmounting a multilayer compound mirror-structure. Within the multilayer compound mirror-structure is a relatively thick layer of diamond which serves as a heat-spreader.

Abstract: An optical transmission apparatus is provided with an optical filter on a transmission line between a reception end of a transmission line and an OSC receiver. The optical filter has transmission characteristics such as to pass main signal light and optical supervisory channel light (OSC light), and to cut off noise light contained in at least one end portion band on a short wavelength side and a long wavelength side of an OSC transmission band used for reception of OSC light. By such a configuration, even in a case where the OSC light is Raman amplified and transmitted, the influence of noise light due to Raman amplification can be reduced, and OSC light can be received reliably, enabling high dependability to be realized.

Abstract: A diode pumped solid-state laser for high shock, high vibration environments such as those found in laser ignition systems for artillery systems which internally integrate into the breech of an artillery system such as a 155 mm howitzer. The diode pumped solid-state laser employs a unique gain medium mounting which permits its use in such high shock/high vibration environments. Contributing further to robustness is a monolithic design based on diode arrays mounted in a linear configuration along with an advanced polycrystalline gain medium laser rod. Advantageously, and in sharp contrast to laser ignition systems incorporating flash lamps, the diode pumped solid-state laser of the present invention permits a seamless integration into a howitzer artillery weapons system without other complex mounting provisions or shock isolation system(s).

Abstract: A tanning device has one or more reflective surface areas. The reflective surface areas may be used for redirecting light rays toward one or more parts of a user's body.

Abstract: Methods, systems, and computer program products are provided for measuring modal dispersion in a bi-directional dual-multimode fiber optic network (BDON). A modal dispersion measurement system includes a computer processor that is programmed to receive a first pulse width of a first pulse. The first pulse may be communicated over the BDON that is coupled to the processor. A second pulse width of a second pulse is received, the second pulse width being indicative of the modal dispersion. The second pulse width and the first pulse width are compared by the computer processor to determine a distortion error. A measurement of the modal dispersion is validated in accordance to the distortion error.

Abstract: A semiconductor laser has a first diffractive grating area. The first diffractive grating area has a plurality of segments. Each segment has a first area including a diffractive grating and a second area that is space area combined to the first area. Optical lengths of at least two of the second areas are different from each other. A refractive-index of each of the segments are changeable.

Abstract: There is provided a semiconductor light-emitting device including a temperature detecting section which is allowed to accurately estimate an element temperature. The semiconductor light-emitting device includes: one or a plurality of surface-emitting semiconductor light-emitting sections and one or a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the surface-emitting semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light to outside. The semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate.

Abstract: A surface-emitting semiconductor laser device that includes an edge-emitting laser formed in layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.

Abstract: The invention relates to a laser amplification system for generating retrievable laser pulses having at least one laser source, in particular with a pulse selector arranged downstream thereof for the targeted selection of amplifiable laser pulses, a laser medium for amplifying laser pulses generated by the laser source and a loss modulator, wherein the loss modulator is arranged and connected such that said modulator modulates the amplification of the laser pulses by the laser medium by loss generation so that the retrievable laser pulses are provided with a predefined pulse time and/or pulse energy. Before an amplification process for one of the laser pulses, the current amplification of the laser medium is determined and the loss generation is controlled by the loss modulator depending on the current amplification of the laser medium.

Abstract: An 830 nm broad area semiconductor laser having a distributed Bragg reflector (DBR) structure. The semiconductor laser supports multiple horizontal transverse modes of oscillation extending within a plane perpendicular to a crystal growth direction of the laser, in a direction perpendicular to the length of the resonator of the laser. The resonator includes a diffraction grating in the vicinity of the emitting facet of the laser. The width of the diffraction grating in a plane perpendicular to the growth direction and perpendicular to the length of the resonator is different at first and second locations along the length of the resonator. The width of the diffraction grating along a direction which is perpendicular to the length of the resonator increases with increasing distance from the front facet of the semiconductor laser.

Abstract: A laser diode drive includes a first photo diode connection terminal to connect a first photo diode that detects light emission amounts of multiple laser diodes, multiple second photo diode connection terminals to connect multiple second photo diodes that detect light emission amounts of the respective multiple laser diodes, multiple APC controllers to control the light emission amounts of the multiple laser diodes based on monitor currents from the first photo diode or the second photo diodes, multiple switches to connect and disconnect the respective APC controllers with a monitor current path formed between the first photo diode connection terminal and the multiple APC controllers, and a detector to detect whether or not the first photo diode is connected to the first photo diode connection terminal and cause all of the switches to disconnect when the first photo diode is not connected to the first photo diode connection terminal.

Abstract: Disclosed is a semiconductor laser driving unit that outputs a driving current for driving a semiconductor laser. A value of a correction current is set in such a manner as to determine a rising characteristic and/or a falling characteristic of an output of the driving current in accordance with a value of the driving current.

Abstract: A nitride semiconductor laser chip is provided that offers sufficient reliability even at high output. The nitride semiconductor laser chip has a nitride semiconductor layer formed on a substrate, a resonator facet formed on the nitride semiconductor layer, and a coating film formed on the resonator facet and containing Ar. The coating film has, in a region contiguous with the resonator facet and in the vicinity thereof, a low-Ar region with a low Ar content and, on the side of this low-Ar region opposite from the resonator facet, a high-Ar region with a higher Ar content than the low-Ar region.

Abstract: The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser wavelength may be controlled.

Abstract: A modulating light having a wavelength of 600 nm to 1000 nm excluding a range of 870 nm to 910 nm is irradiated to a portion around hair roots such that a light absorptive component existing in a human body around the hair roots absorbs the light for modulating hair growth. The light having the wavelength in the above range enhances hair growth free from causing inflammation, yet safely and gentle to skin.

Abstract: The present invention is directed to a semiconductor laser device comprising a first resonator section for resonating an optical resonator signal for providing an optical output signal at an output of said laser device, wherein said first resonator section is arranged for selectively resonating at a plurality of discrete output wavelengths, and wherein said laser device further comprises a second resonator section operatively connected to said first resonator section, said second resonator section being arranged for providing an optical feedback signal at a feedback wavelength to said first resonator section for locking said first resonator section into resonating at a selected output wavelength of said discrete output wavelengths, which selected output wavelength corresponds to said feedback wavelength for providing said optical output signal.