Abstract: A carrier laser device assembly is provided in which a visible region of a laser that includes an output portion and/or output portion of a waveguide of the laser is visible to an imaging system when the laser is attached to a carrier. The laser may be burned-in and/or tested prior to attachment to a photonic integrated circuit. The output portion and/or output portion of waveguide may be aligned with a corresponding input portion and/or input portion of a waveguide of the PIC as the laser assembly is being attached to the PIC via imaging of the visible portion by the imaging system.

Abstract: An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.

Abstract: An optical switch is configured by providing a planar lightwave circuit layer on a top surface of a Si substrate. The circuit layer forms, on the top surface of the substrate, an optical waveguide including an underclad layer, an optical waveguide core, and an overclad layer. The optical waveguide is provided to have a structure configuring a Mach-Zehnder interferometer. A heater is provided at a position just above an arm of the core on the top surface of the clad layer, and power supply electric wires are electrically connected to both ends of the heater. In a local portion including an interface between the clad layer and the top surface of the substrate, trench structure portions as concave grooves are provided.

Abstract: A method of forming semiconductor device includes forming an active layer in a substrate including forming components of one or more transistors; forming an MD and gate (MDG) layer over the active layer including forming a gate line; forming a metal-to-S/D (MD) contact structure; and forming a waveguide between the gate line and the MD contact structure; forming a first interconnection layer over the MDG layer including forming a first via contact structure over the gate line; forming a second via contact structure over the MD contact structure; and forming a heater between the first and second via contact structures and over the waveguide.

Abstract: An optically transparent protective coating is described that remains stable at elevated temperatures associated with optical fiber-based sensor applications and is sufficiently transparent to allow for conventional fiber Bragg gratings (FBGs) to be formed by directly writing through the coating. In particular, vinyl group-containing silicone polymers have been found to provide the UV transparency required for a write-through coating (WTC) and promising mechanical properties for protecting the optical fibers, while also being able to withstand elevated temperatures for extended periods of time.

Abstract: To reduce the size while being able to accurately monitor light of a plurality of wavelengths. An optical multiplexing circuit includes: a plurality of branching units each configured to divide light output from a corresponding one of a plurality of input waveguides; a multiplexing unit configured to multiplex beams each being one beam of the light divided by each of the plurality of branching units; an output waveguide configured to output the light multiplexed by the multiplexing unit; and a plurality of monitoring waveguides each configured to output another beam of the light divided by each of the plurality of branching units, wherein at least one monitoring waveguide of the plurality of monitoring waveguides includes a bent waveguide constituted by a rib-shaped waveguide.

Abstract: Disclosed is a polymeric waveguide for propagating light therein along width and length dimensions of the polymeric waveguide. The polymeric waveguide has a first curved surface on one side thereof and a second curved surface on an opposite second side thereof, and a refractive index spatially varying through a thickness thereof between the first curved surface and the second curved surface. The polymeric waveguide is curved in a cross-section comprising at least one of the width and length dimensions.

Abstract: The present disclosure provides a MEMS-based variable optical attenuator (VOA) array, sequentially including an optical fiber array, a micro-lens array, and a MEMS-based micro-reflector array to form a VOA array having several optical attenuation units. The MEMS-based micro-reflectors can change the propagation direction of a beam, causing a misalignment coupling loss to the beam and thereby achieving optical attenuation, with a broad range of dynamic attenuation, low polarization dependent loss and wavelength dependent loss, good repeatability, short response time (at the millisecond level), etc. Arrayed device elements are used as assembly units of the present disclosure, and the assembly of arrayed elements facilitates tuning in batches. Accordingly, automation levels are improved, and the production costs are reduced.

Abstract: Optical waveguides may include a substrate and a silicon based optical waveguide supported on the substrate. The silicon based optical waveguide may include a central ridge portion and a plurality of spaced apart wing portions connected through connecting portions. The number of wing portions may be greater than two. The central ridge portion may have a central ridge lateral width extent greater than a lateral width extent of at least one of the wing portions. Optical waveguides may include a substrate, a silicon based optical waveguide supported on the substrate, and a concentrator supported on the substrate and positioned within a lateral width extent of the silicon based optical waveguide and outside of a height extent of the silicon based optical waveguide. The optical waveguides may be included as part of an optical modulator.

Abstract: A coupled-core multicore optical fiber has a plurality of cores that are doped with alkali metals or chlorine to achieve low attenuation and a large effective area. The cores may be embedded in a common cladding region that may be fluorine doped. The cores may also be doped with chlorine, either with the alkali metals described above or without the alkali metals.

Abstract: The invention relates to a method for homogenization of the output beam profile of a multimode optical waveguide (10). The method comprises the following method steps: splitting input radiation (2) of coherent light over two or more beam paths (I-IV), modulating the radiation in at least one of the beam paths (I-IV), combining the beam paths (I-IV) by superimposing the modulated radiation onto the input (9) of the multimode waveguide (10), where the radiation forms a temporally variable interference pattern, and propagating the radiation using the multimode waveguide (10). The invention furthermore relates to a device for carrying out the method.

Abstract: A multicore optical fiber includes an inner glass region having a plurality of core regions surrounded by a common outer cladding, the inner glass region further having at least one marker and an outer diameter in the range of 120 microns and 130 microns, wherein each core region is comprised of a germania-doped silica core and a fluorine-doped silica trench, wherein the trench volume of the fluorine-doped silica trench is greater than 50% ? microns2. The fiber has an outer coating layer surrounding the inner glass region, the outer coating layer having a primary coating layer and a secondary coating layer with a diameter of the secondary coating layer equal to or less than 200 microns, wherein each core region has a mode field diameter greater than 8.2 microns at 1310 nm, a cable cutoff wavelength of less than 1260 nm, and zero dispersion wavelength of less than 1335 nm.

Abstract: A method to form a three-dimensional photonic crystal template with a gradient structure involves irradiating a photoresist composition of a thickness of at least 15 ?m from at least four laser beams to yield a periodic patterned with a percolating matrix of mass in constructive volumes of a cured photoresist composition and destructive volumes of voids free of condensed matter where the proportion of constructive volume displays a gradient from the irradiated surface to the substrate after development. For a given light intensity, photoinitiator concentration in the photoresist composition, and a given thickness, by irradiating for a relatively short period, a three-dimensional photonic crystal template displaying a gradient having greater constructive volume proximal the air interface forms and a relatively long irradiation period results in a gradient having greater constructive volume proximal the substrate.

Abstract: Disclosed is an optical cable for distributed sensing. The optical cable comprises a first metal tube with at least two optical fibers loosely arranged therein and a second metal tube with at least two tight buffered optical fibers tightly arranged within an inner surface of the second metal tube. A third metal tube having an inner surface collectively surrounds and operatively contacts the first metal tube and said second metal tube. At least one of the first metal tube and the second metal tube is fixed by means of an adhesive compound to the inner surface of the third metal tube.

Abstract: An on-chip optical switch based on an echelle grating and a phase tuning element is described herein. The phase tuning element may change a refractive index of the material through which an optical signal propagates, thereby causing a change in the angle of propagation of the optical signal. By dynamically tuning the phase change element, the refractive index change may be controlled such that the deviation of the optical signal causes the optical signal to be focused on a particular coupling waveguide out of an array of coupling waveguides. The echelle grating with the active phase change element form a configurable optical switch capable of switching an optical signal between two or more coupling waveguides, that may be respectively connected to different optical signal processing pathways.

Abstract: A semiconductor package includes a first mold layer at least partially encasing at least one photonic integrated circuit. A redistribution layer structure is fabricated on the first mold layer, the redistribution layer structure including dielectric material and conductive structures. A second mold layer at least partially encasing at least one semiconductor chip is fabricated on the redistribution layer structure. The redistribution layer structure provides electrical pathways between the at least one semiconductor chip and the at least one photonic integrated circuit. One or more voids are defined in the second mold layer in an area above an optical interface of the at least one photonic integrated circuit such that light is transmittable through dielectric material above the optical interface.

Abstract: A method for fabricating a photonic package device is provided. The method includes patterning a semiconductor layer of a semiconductor-on-insulator (SOI) substrate into a waveguide structure and at least one first semiconductor pillar; forming a metal-dielectric stack over the waveguide structure and the first semiconductor pillar; etching an opening in the metal-dielectric stack to expose the first semiconductor pillar; etching an insulator layer of the SOI substrate to form at least one insulator cap below the first semiconductor pillar; and etching a base semiconductor substrate of the SOI substrate to form at least one second semiconductor pillar below the insulator cap.

Abstract: A miniaturized integrated frequency locked optical whispering evanescent resonator comprises: an optical source; an optical path having a first end and a second end, the optical path coupled to the optical source at the first end; an optical resonator disposed along a side of the optical path between the first and second ends, the optical resonator coupled to the optical path through an evanescent field to excite an optical whispering-gallery mode; an optical receiver coupled to the second end of the optical path; and a digital data processor configured to communicate with the optical receiver and the optical source, wherein the digital data processor comprises a frequency locking system and a data acquisition system, wherein the frequency locking system tunes the frequency of the optical source to the optical whispering-gallery mode of the optical resonator, and wherein the resonator weighs less than 15 kg and is containable within a volume less than 30 liters.

Abstract: In various embodiments, the beam parameter product and/or beam shape of a laser beam is adjusted by directing the laser beam across a path along the input end of a cellular-core optical fiber. The beam emitted at the output end of the cellular-core optical fiber may be utilized to process a workpiece.

Abstract: Embodiments herein describe using a double wafer bonding process to form a photonic device. In one embodiment, during the bonding process, an optical element (e.g., a high precision optical element) is optically coupled to an optical device in an active surface layer. In one example, the optical element comprises a nitride layer which can be patterned to form a nitride waveguide, passive optical multiplexer or demultiplexer, or an optical coupler.