Patents Examined by John Brayton
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Patent number: 9991090Abstract: The present invention discloses an electron microscope and FIB system for processing and imaging of a variety of materials using two separate laser beams of different characteristics. The first laser beam is used for large bulk material removal and deep trench etching of a workpiece. The second laser beam is used for finer precision work, such as micromachining of the workpiece, small spot processing, or the production of small heat affected zones. The first laser beam and the second laser beam can come from the same laser source or come from separate laser sources. Having one laser source has the additional benefits of making the system cheaper and being able to create separate external and internal station such that the debris generated from bulk material removal from the first laser beam will not interfere with vacuum or components inside the particle beam chamber.Type: GrantFiled: November 15, 2012Date of Patent: June 5, 2018Assignee: FEI CompanyInventor: Kelly Bruland
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Patent number: 9892891Abstract: Provided is a Li-containing phosphoric-acid compound sintered body of both high relative density and very small crystal grain diameter with reduced incidence of defects (voids) such as air holes, the Li-containing phosphoric-acid compound sintered body causing a Li-containing phosphoric-acid compound thin film useful as a solid electrolyte for a secondary cell or the like to be stabilized without any incidence of target cracking or irregular electrical discharge, and offering high-speed film-forming capability. This Li-containing phosphoric-acid compound sintered body contains no defects measuring 50 ?m or larger within a 1 mm2 cross-sectional region in the interior thereof, while having an average crystal grain diameter of no more than 15 ?m and a relative density of at least 85%.Type: GrantFiled: April 10, 2013Date of Patent: February 13, 2018Assignee: KOBELCO RESEARCH INSTITUTE, INC.Inventors: Yuichi Taketomi, Yuki Tao, Moriyoshi Kanamaru
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Patent number: 9885107Abstract: The purpose of the present invention is to prevent a drop in secondary electron emission characteristics due to the inside wall of a chamber being covered by a noble metal film continuously formed by plasma sputtering, and so generate and maintain the plasma. After a noble metal film is formed on a given substrate and before a film is formed on a subsequent substrate, a secondary electron emission film comprising a material having a secondary electron emission coefficient higher than that of the noble metal is formed on the inner wall of the chamber.Type: GrantFiled: December 10, 2012Date of Patent: February 6, 2018Assignee: CANON ANELVA CORPORATIONInventors: Shunichi Wakayanagi, Eisaku Watanabe
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Patent number: 9875922Abstract: A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such that each is cantilevered on one rail assemblies and support a plurality of chucks. The rail assemblies are coupled to an elevation mechanism that places the rails in upper position for processing and at lower position for returning the chuck assemblies for loading new wafers. A pickup head assembly loads wafers from a conveyor onto the chuck assemblies. The pickup head has plurality of electrostatic chucks that pick up the wafers from the front side of the wafers. Cooling channels in the processing chucks are used to create air cushion to assist in aligning the wafers when delivered by the pickup head.Type: GrantFiled: April 14, 2016Date of Patent: January 23, 2018Assignee: INTEVAC, INC.Inventors: Terry Pederson, Henry Hieslmair, Moon Chun, Vinay Prabhakar, Babak Adibi, Terry Bluck
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Patent number: 9831073Abstract: Described is a design and method for producing a sputtering target assembly with low deflection made from target material solder bonded to composite backing plate with coefficient of thermal expansion (CTE) matching the target material. The composite backing plate is composite configuration composed of at least two different materials with different CTE. The composite backing plate, after plastic deformation, if necessary, has a CTE matching the target material and low and desirable deflection in the bonding process, and therefore, resulting in a low deflection and low stress target material bonded to composite backing plate assembly. The method includes manufacturing composite backing plate with a flat bond surface, heat treating of target blank and composite backing plate to achieve desirable shape of bond surfaces, solder bonding target to a backing plate, and slowly cooling the assembly to room temperature.Type: GrantFiled: February 12, 2013Date of Patent: November 28, 2017Assignee: Tosoh SMD, Inc.Inventors: Yongwen Yuan, Eugene Y. Ivanov
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Patent number: 9824856Abstract: A deposition method is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a deposition film, the deposition method including: a first deposition film-depositing step that deposits a first deposition film on the specimen using the ion beam that is defocused with respect to the specimen; and a second deposition film-depositing step that deposits a second deposition film on the first deposition film using the ion beam that is smaller in defocus amount than that used in the first deposition film-depositing step.Type: GrantFiled: December 2, 2015Date of Patent: November 21, 2017Assignee: JEOL Ltd.Inventor: Misumi Kadoi
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Patent number: 9818586Abstract: Provided is an arc evaporation source equipped with a target, a ring-shaped magnetic field guide magnet and a back side magnetic field generation source. The magnetic field guide magnet is aligned in a direction perpendicular to the evaporation face of the target and has a polarity that is the magnetization direction facing forward or backward. The back side magnetic field generation source is disposed at the rear of the magnetic field guide magnet, which is at the side of the back side of the target, and forms magnetic force lines running in the direction of magnetization of the magnetic field guide magnet. The target is disposed such that the evaporation face is positioned in front of the magnetic field guide magnet.Type: GrantFiled: June 11, 2013Date of Patent: November 14, 2017Assignee: Kobe Steel, Ltd.Inventors: Shinichi Tanifuji, Kenji Yamamoto
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Patent number: 9809878Abstract: In-line metallizer assemblies can include an external rotating actuator exchange that can be operable to exchange one or more parts between a conveyor system and a vacuum chamber, and an internal rotating actuator exchange within the vacuum chamber that can be operable to receive the one or more parts from the external rotating actuator exchange, transition the one or more parts to a sputter coater integrated with the vacuum chamber for metallizing, and return metallized one or more parts to the external rotating actuator exchange such that the external rotating actuator exchange can return the metallized one or more parts to the conveyor system.Type: GrantFiled: May 1, 2015Date of Patent: November 7, 2017Assignee: Marca Machinery, LLCInventors: Jeffrey J. Black, Stanton A. Brooks
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Patent number: 9793126Abstract: The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material.Type: GrantFiled: September 20, 2013Date of Patent: October 17, 2017Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Sang Ki Nam, Alexei Marakhtanov, Eric A. Hudson
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Patent number: 9779921Abstract: An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction.Type: GrantFiled: June 25, 2015Date of Patent: October 3, 2017Assignee: CANON ANELVA CORPORATIONInventors: Yoshimitsu Shimane, Satoshi Uchino, Susumu Akiyama, Kazuaki Matsuo, Nobuo Yamaguchi
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Patent number: 9773653Abstract: Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least chromium oxide, wherein the ferromagnetic material sputtering target contains one or more types among Y, Mg, and Al in a total amount of 10 wtppm or more and 3000 wtppm or less, and has a relative density of 97% or higher. The provided ferromagnetic material sputtering target containing chromium oxide can maintain high density, has uniformly pulverized oxide phase grains therein, and enables low generation of particles.Type: GrantFiled: January 28, 2013Date of Patent: September 26, 2017Assignee: JX Nippon Mining & Metals CorporationInventors: Hideo Takami, Atsutoshi Arakawa
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Patent number: 9771647Abstract: A cathode assembly for a magnetron sputtering system includes a target comprising sputterable material having an at least partially exposed, substantially planar sputtering or erosion surface and a target support configured to support and move the target during sputtering. In certain exemplary embodiments the cathode assembly further comprises a magnetic field source, e.g., a magnet array behind the target. The target support is configured to move the sputtering surface of the target by rotating or spinning the target in the plane of the sputtering surface, moving the target linearly back-and-forth or otherwise. The target support is configured to move the target relative to the magnetic field source, which may be stationary during sputtering, e.g., relative to the cathode assembly and vacuum chamber in which the sputtering is performed. A sputtering system including such a cathode assembly also is provided. A method of sputtering is further provided, employing such a cathode assembly.Type: GrantFiled: December 4, 2009Date of Patent: September 26, 2017Inventors: Michael A. Scobey, Shaun Frank McCaffery
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Patent number: 9773654Abstract: Provided is a Fe—Co-based alloy sputtering target material having a composition represented as an atomic ratio by the compositional formula: (Fea—Co100-a)100-b-c-d—Tab—Nbc-Md, wherein 0<a?80, 0?b?10, 0?c?15, 5?b+c?15, 2?d?20, 15?b+c+d?25, and M represents one or more elements selected from the group consisting of Mo, Cr and W, with the balance consisting of unavoidable impurities, wherein the sputtering target material has a bending fracture strain ?fB at 300° C. of 0.4% or more.Type: GrantFiled: January 27, 2016Date of Patent: September 26, 2017Assignee: HITACHI METALS, LTD.Inventors: Jun Fukuoka, Kazuya Saito, Kouichi Sakamaki, Tomoyuki Hata
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Patent number: 9767988Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.Type: GrantFiled: August 28, 2012Date of Patent: September 19, 2017Assignee: Advanced Energy Industries, Inc.Inventors: Victor Brouk, Daniel J. Hoffman, Daniel Carter
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Patent number: 9761368Abstract: Disclosed are magnetic structures, including on-chip inductors comprising laminated layers comprising, in order, a barrier and/or adhesion layer, a antiferromagnetic layer, a magnetic growth layer, a soft magnetic layer, an insulating non-magnetic spacer, a soft magnetic layer, a magnetic growth later, an antiferromagnetic layer. Also disclosed are methods of making such structures.Type: GrantFiled: December 22, 2015Date of Patent: September 12, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hariklia Deligianni, William J. Gallagher, Eugene J. O'Sullivan, Naigang Wang
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Patent number: 9748080Abstract: According to the present invention, a Cu—Ga alloy sputtering target which is a sintered body has a composition with 29.5 atom % to 43.0 atom % of Ga and a balance of Cu and inevitable impurities. A Cu—Ga alloy crystal particle in the sintered body has a structure in which ? phase particles are dispersed in a ?1-phase crystal particle. A method for producing the sputtering target includes a step of performing normal pressure sintering by heating a molded body formed of a powder mixture of a pure Cu powder and a Cu—Ga alloy powder in a reducing atmosphere, and a step of cooling the obtained sintered body at a cooling rate of 0.1° C./min to 1.0° C./min, at a temperature having a range of 450° C. to 650° C.Type: GrantFiled: November 18, 2014Date of Patent: August 29, 2017Assignee: MITSUBISHI MATERIALS CORPORATIONInventors: Yuuki Yoshida, Kouichi Ishiyama, Satoru Mori
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Patent number: 9741536Abstract: Curtaining artifacts on high aspect ratio features are reduced by reducing the distance between a protective layer and feature of interest. For example, the ion beam can mill at an angle to the work piece surface to create a sloped surface. A protective layer is deposited onto the sloped surface, and the ion beam mills through the protective layer to expose the feature of interest for analysis. The sloped mill positions the protective layer close to the feature of interest to reduce curtaining.Type: GrantFiled: October 4, 2013Date of Patent: August 22, 2017Assignee: FEI CompanyInventors: Sang Hoon Lee, Stacey Stone, Jeffrey Blackwood, Michael Schmidt
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Patent number: 9741368Abstract: A method of forming a PMR writer is disclosed wherein at least one of a recessed center section in the write pole trailing edge and a center recessed trailing shield is used to improve the field gradient at track edge. In all embodiments, there is a non-uniform write gap formed between the trailing edge and the trailing shield. The recessed portion of the write pole trailing edge and/or center recess of the trailing shield has a thickness from 10 to 40 nm in a down-track direction and a width in a cross-track direction of 20 to 200 nm. The distance between the center recess and a corner of the trailing edge is from 20 to 80 nm. A sequence of steps is provided to fabricate the two embodiments of the present invention.Type: GrantFiled: September 23, 2013Date of Patent: August 22, 2017Assignee: Headway Technologies, Inc.Inventor: Lijie Guan
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Patent number: 9725799Abstract: A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 ?m.Type: GrantFiled: December 5, 2014Date of Patent: August 8, 2017Assignee: Applied Materials, Inc.Inventors: Jennifer Y. Sun, Vahid Firouzdor, Biraja Prasad Kanungo, Tom K. Cho, Vedapuram S. Achutharaman, Ying Zhang
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Patent number: 9728382Abstract: Evaporation source, in particular for use in a sputtering process or in a vacuum arc evaporation process, preferably a cathode vacuum arc evaporation process. The evaporation source includes an inner base body which is arranged in an outer carrier body and which is arranged with respect to the outer carrier body such that a cooling space in flow communication with an inlet and an outlet is formed between the base body and the carrier body. In accordance with the invention, the cooling space includes an inflow space and an outflow space, and the inflow space is in flow communication with the outflow space via an overflow connection for the cooling of the evaporation source such that a cooling fluid can be conveyed from the inlet via the inflow space the overflow connection and the outflow space to the outlet.Type: GrantFiled: January 24, 2014Date of Patent: August 8, 2017Assignee: OERLIKON SURFACE SOLUTIONS AG, PFAEFFIKONInventors: Joerg Vetter, Stefan Esser, Juergen Mueller, Georg Erkens