Abstract: Disclosed is a vacuum deposition apparatus which suppresses mutual interference of magnetic fields generated by multiple magnetic-field applying mechanisms for evaporation sources. The vacuum deposition apparatus includes a deposition chamber; a magnetic-field applying mechanism of sputtering evaporation source disposed in the deposition chamber; a magnetic-field applying mechanism of arc evaporation source disposed in the same deposition chamber; and magnetic-field shielding units arranged so as to cover partially or entirely at least one of these magnetic-field applying mechanisms for evaporation sources (preferably the magnetic-field applying mechanism of sputtering evaporation source). Portions (portions to face a target material upon dosing) of openable units of magnetic-field shielding units are preferably made from a non-magnetic material.

Abstract: Provided is a sputtering target characterized by containing Ag and C. The sputtering target contains Ag in addition to Fe, Pt and C. By allowing the sputtering target to contain Ag, the sputtering target has high density. As a result, when the sputtering target is placed in a vacuum atmosphere in the sputtering process, the amount of a gas emitted from the sputtering target can be reduced, and the properties of a thin film formed by sputtering can be improved. Moreover, even when the sputtering target is produced by low-temperature sintering, it has high density.

Abstract: A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.

Abstract: In a method for coating a substrate in a vacuum chamber having a rotating magnetron, wherein a substrate is guided past the magnetron in a substrate transport direction and is coated by a material, which has been isolated from a target connected to the magnetron, and, optionally with the material reacting with a reactive gas present in the vacuum chamber, homogeneity of the coating layer on a substrate is improved by stabilizing the working point by way of the target rotation. This is achieved in that a periodic change of a first process parameter caused by the target revolution is compensated for by a periodic change of a second process parameter having a determined level and/or by employing two magnetrons having different rotational speeds.

Abstract: An IBAD apparatus includes, a target, a sputter ion source irradiating the target with sputter ions to sputter some of constituent particles of the target, a film formation region in which a base material for depositing thereon the particles sputtered from the target is disposed, and an assist ion beam irradiation device irradiating assist ion beams from a direction oblique to the direction of a normal of the film formation surface of the base material disposed in the film formation region, where the sputter ion source includes a plurality of ion guns arranged so as to be able to irradiate the target from an end portion on one side to an end portion on the other side with sputter ion beams, and current values for generating the sputter ion beams of the plurality of ion guns are set respectively.

Abstract: A process for coating a part comprises the steps of providing a chamber which is electrically connected as an anode, placing the part to be coated in the chamber, providing a cathode formed from a coating material to be deposited and platinum, and applying a current to the anode and the cathode to deposit the coating material and the platinum on the part.

Abstract: Provided is a sputtering target with low generation of particles having a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50%, wherein a center-line average surface roughness Ra is 0.1 ?m or less, a ten-point average roughness Rz is 0.4 ?m or less, a distance between local peaks (roughness motif) AR is 120 ?m or less, and an average length of waviness motif AW is 1500 ?m or more. Provided are a sputtering target wherein the generation of nodules and particles upon sputtering can be prevented or inhibited by improving the target surface, which contains large amounts of substances without ductility; and a surface processing method thereof.

Abstract: The subject of the invention is an essentially ceramic target for a sputtering device, especially for magnetically enhanced sputtering, said target comprising predominantly nickel oxide, the nickel oxide NiOx being oxygen-deficient with respect to the stoichiometric composition.

Abstract: A non-axisymmetric electromagnet coil used in plasma processing in which at least one electromagnet coil is not symmetric with the central axis of the plasma processing chamber with which it is used but is symmetric with an axis offset from the central axis. When placed radially outside of an RF coil, it may reduce the azimuthal asymmetry in the plasma produced by the RF coil. Axisymmetric magnet arrays may include additional axisymmetric electromagnet coils. One axisymmetric coil is advantageously placed radially inside of the non-axisymmetric coil to carry opposed currents. The multiple electromagnet coils may be embedded in a molded encapsulant having a central bore about a central axis providing the axisymmetry of the coils.

Abstract: The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.

Abstract: The present invention discloses an improved method of LED reflector manufacturing process where the method includes providing a substrate, wherein said substrate comprises a reflector unit, and a Light Emitting Diode; providing a shield member with ferromagnetic property; placing said shield member over the desired area of over the substrate; providing a magnet where said shield member is attracted to; placing said magnet immediately below the substrate wherein said magnet is capable of immobilizing the shield member over the substrate; performing a vacuum deposition coating; and removing the magnet and the shield member.

Abstract: The present disclosure includes a method for control of a film composition with co-sputter physical vapor deposition. In one implementation, the method includes: positioning first and second PVD guns above a substrate, selecting first and second collimators having first and second sets of physical characteristics, positioning the first and second collimators between the first and second PVD guns and the substrate, sputtering at least one material from the first and second PVD guns through the first and second collimators upon application of a first power and second power, wherein the first PVD gun has a first deposition rate from the first collimator at the first power, and the second PVD gun has a second deposition rate from the second collimator at the second power.

Abstract: A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.

Abstract: A method and sputter-deposition system for depositing a layer composed of a mixture of materials and having a predetermined refractive index are provided. The sputter-deposition system includes a plurality of target cathodes, each of which comprises a target material having a different composition, that are powered by a single DC power supply. The plurality of target cathodes are cosputtered to deposit a layer composed of a mixture of materials on a substrate. The composite refractive index of the layer is controlled by adjusting an operating parameter of the plurality of target cathodes. Suitable operating parameters include cathode power, cathode voltage, cathode current, an angle between a cathode support and the substrate, and a flow rate of a reactive gas.

Abstract: A method of manufacturing a magnetoresistive (MR) effective element having a pair of magnetic layers and a nonmagnetic intermediate layer including a ZnO film, wherein a relative angle of magnetization directions of the pair of magnetic layers varies according to an external magnetic field. The method includes a step for introducing a mix gas of oxygen gas and argon gas into a depressurized chamber, wherein a first target of ZnO, a second target of Zn and a substrate having a right-below layer are disposed in the chamber, and a step for depositing the ZnO film on the right-below layer by applying each of a first and second direct current (DC) application power to spaces between the first and second targets and the substrate respectively after the mix gas introducing step, wherein the first and second targets are set at negative potential, and the substrate is set at positive potential.

Abstract: Embodiments disclosed herein generally relate to a method for seasoning a sputtering target in-situ with a substrate to be processed. New semiconductor compounds containing oxygen, nitrogen, and an element such as zinc, cadmium, tin, indium, and gallium are beginning to replace silicon as the material for active channels in TFTs. The new semiconductor compounds may be deposited by a reactive sputtering process. During the sputtering process, reactive gas reacts with the metal from the sputtering target and deposits on the substrate. Some of the reactive gas may react at the surface and lead to a buildup of a compound at the target surface. Because oxygen and nitrogen are quite reactive, an oxide or nitride compound may develop at the target surface. The oxide or nitride may be removed by seasoning the sputtering target. The seasoning may occur while the substrate is within the processing chamber.

Abstract: To provide a cylindrical sputtering target, whereby cracking during sputtering can be remarkably reduced. A cylindrical sputtering target, wherein a cylindrical target material made of ITO or AZO has a relative density of at least 90%; the angle between the grinding direction on its outer circumferential surface and a straight line parallel with its cylindrical axis (out of such angles, ? represents an angle between 0° and 90°) satisfies 45°<??90° or tan ?>?R/L (where R is an outside diameter of the cylindrical target material, and L is the length of the cylindrical target material); and the surface roughness Ra of the outer circumferential surface of the cylindrical target material is at most 3 ?m.

Abstract: Apparatus and methods are provided that enable processing of patterned layers on substrates using a detachable mask. Unlike prior art where the mask is formed directly over the substrate, according to aspects of the invention the mask is made independently of the substrate. During use, the mask is positioned in close proximity or in contact with the substrate so as to expose only portions of the substrate to processing, e.g., sputtering or etch. Once the processing is completed, the mask is moved away from the substrate and may be used for another substrate. The substrate may be cycled for a given number of substrates and then be removed for cleaning or disposal.

Abstract: The subject invention provides conductive stripes, suitable for use as electrodes, and methods of making conductive stripes.

Abstract: A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure.