Abstract: Embodiments in accordance with the present invention provide for norbornane-type ballast materials, norbornane-type photoactive compounds derived from such ballast materials and alkali-soluble positive-tone polymer compositions that encompass such norbornane-type photoactive compounds and one of a PBO or PNB resin.

Abstract: A resist composition for immersion exposure, including a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, an acid generator component (B) that generates acid upon exposure, and a fluorine-containing compound (C) represented by general formula (c-1) (in formula (c-1), R1 represents an organic group which may contain a polymerizable group; X represents a divalent organic group having an acid dissociable portion; and R2 represents an organic group having a fluorine atom).

Abstract: Compounds of the formula (I), wherein X is a single bond, CRaRb O, S, NRC, NCORC, CO, SO or SO2; L, L1, L2, L3, L4, L5, L6, L7 and L8 are for example hydrogen, R1 or COT; T denotes T1 or O-T2; T1 and T2 for example are hydrogen, C1-C20alkyl, C3-C12cycloalkyl, C2-C20alkenyl, C5-C12cycloalkenyl, C6-C14aryl, C3-C12heteroaryl, C1-C20alkyl substituted by one or more D, C2-C20alkyl interrupted by one or more E, C2-C20alkyl substituted by one or more D and interrupted by one or more E or Q; R1, R2, R3, R4, Ra, Rb and Rc are T1; D is for example R5, OR5, SR5 or Q1; E is for example O, S, COO or Q2; R5 and R6 for example are hydrogen, C1-C12alkyl or phenyl; Q is for example C6-C12bicycloalkyl, C6-C12bicycloalkenyl or C6-C12tricycloalkyl; Q1 is for example, C6-C14aryl or C3-C12heteroaryl; Q2 is for example C6-C14arylene or C3-C12heteroarylene; Y is an anion; and M is a cation; provided that at least one of L, L1, L2, L3, L4, L5, L6, L7 and L8 is other than hydrogen; and provided that (i) at least one of T1 or T2 is a g

Abstract: A first photoresist is applied over an optically dense layer and lithographically patterned to form an array of first photoresist portions having a pitch near twice a minimum feature size. The pattern in the first photoresist portions, or a first pattern, is transferred into the ARC layer and partly into the optically dense layer. A second photoresist is applied and patterned into another array having a pitch near twice the minimum feature size and interlaced with the first pattern. The pattern in the second photoresist, or a second pattern, is transferred through the ARC portions and partly into the optically dense layer. The ARC portions are patterned with a composite pattern including the first pattern and the second pattern. The composite pattern is transferred through the optically dense layer and into the underlayer to form a sublithographic pattern in the underlayer.

Abstract: A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.

Abstract: Provided are radiation-sensitive polymers and compositions which may be used in photolithographic processes. The polymers and compositions provide enhanced sensitivity to activating radiation.

Abstract: Disclosed is a positive photosensitive resin composition that includes (A) a polybenzoxazole precursor including a repeating unit represented by the following Chemical Formula 1; (B) a photosensitive diazoquinone compound; (C) a silane compound; (D) a phenol compound; and (E) a solvent. In the above Chemical Formula 1, each substituent is the same as defined in the specification.

Abstract: A second photoresist having a second photosensitivity is formed on a substrate. A first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on the second photoresist. Preferably, the first photoresist is a gray resist that becomes transparent upon exposure. At least one portion of the first photoresist is lithographically exposed employing a first reticle having a first pattern to form at least one transparent lithographically exposed resist portion, while the second photoresist remains intact. The second photoresist is lithographically exposed employing a second reticle including a second pattern to form a plurality of lithographically exposed shapes in the second photoresist. The plurality of lithographically exposed shapes have a composite pattern which is the derived from the second pattern by limiting the second pattern only within the area of the at least one transparent lithographically exposed resist pattern.

Abstract: A positive lift-off resist composition is provided comprising (A) an alkali-soluble novolac resin, (B) a quinonediazidosulfonate photosensitive agent, (C) an alkali-soluble cellulose resin, and (D) an aromatic hydroxy compound having a formula weight of 180-800. The composition has shelf stability, high sensitivity, and a film retention after development of at least 95% and is used to form a lift-off resist pattern of fully undercut profile.

Abstract: The present invention provides a positive-type radiation-sensitive composition containing (A) a siloxane polymer, and (B) a quinone diazide compound, in which the content of aryl groups relative to Si atoms in the siloxane polymer (A) is greater than 60% by mole and no greater than 95% by mole.

Abstract: A method for fabricating a semiconductor device that includes: providing a substrate prepared with a photoresist layer; providing a photomask comprising a first and a second pattern having a respective first and second pitch range; providing a composite aperture comprising a first and a second off-axis illumination aperture pattern, the first off-axis aperture pattern having a configuration that improves the process window of the first pitch range and the second off-axis aperture pattern having a configuration that improves the process window for a second pitch range; exposing the photoresist layer on the substrate with radiation from an exposure source through the composite aperture and the photomask; and developing the photoresist layer to pattern the photoresist layer.

Abstract: A method for patterning a substrate with extreme ultraviolet (EUV) radiation is provided. The method includes contacting a surface of the substrate with at least one surface modification agent that reacts with and bonds to the surface 402 of the substrate 401 to provide a modified surface. A layer of photoresist is formed on the modified surface, followed by exposing the layer of photoresist to a pattern of EUV radiation. The surface modification agent has a general formula: X-L-Z, where X is a leaving group; L is a linkage group including a substituted or un-substituted carbon chain having 1 to 20 carbons, a sulfur moiety, a silicon moiety, or combinations thereof; and Z is at least one of an acid functional group, a photoactive acid generator group or a halide.

Abstract: The present invention provides a salt represented by the formula (I): wherein Q1 and Q2 independently each represent a fluorine atom or a C1-C6 perfluoroalkyl group, L1 represents a C1-C17 divalent saturated hydrocarbon group in which one or more —CH2— can be replaced by —O— or —CO—, ring W represents a C3-C36 aliphatic ring in which one or more —CH2— can be replaced by —O—, —S—, —CO— or —SO2— and in which one or more hydrogen atoms can be replaced by a hydroxyl group, a C1-C12 alkyl group, a C1-C12 alkoxy group, a C3-C12 alicyclic hydrocarbon group or a C6-C10 aromatic hydrocarbon group, Rf is independently in each occurrence a fluorine atom or a C1-C6 fluorinated alkyl group, n represents an integer of 1 to 10, and Z+ represents an organic counter ion.

Abstract: A surface-treating agent for forming a resist pattern, includes: a compound represented by formula (1) as defined in the specification, wherein the surface-treating agent is used in a step between a formation of a first resist pattern on a first resist film and a formation of a second resist film on the first resist pattern to form a second resist pattern, and a pattern-forming method uses the surface-treating agent.

Abstract: A chemically amplified positive resist composition comprises an acid-decomposable keto ester compound of steroid skeleton which is insoluble in alkaline developer, but turns soluble in alkaline developer under the action of acid. The composition is exposed to EB, deep-UV or EUV and developed to form a pattern with a high resolution and improved LER.

Abstract: Disclosed is a positive photosensitive resin composition that includes: (A) a polybenzoxazole precursor including a repeating unit represented by the Chemical Formula 1, a repeating unit represented by the Chemical Formula 2, or a combination thereof, and a thermally polymerizable functional group at least one terminal end of the polybenzoxazole precursor; (B) a photosensitive diazoquinone compound; (C) a silane compound; (D) a phenol compound including a cross-linking functional group; and (E) a solvent.

Abstract: The present invention provides a salt represented by the formula (I): wherein R1 and R2 independently each represent a C1-C6 alkyl group or R1 and R2 are bonded each other to form a C5-C20 aliphatic ring together with the carbon atom to which they are bonded, R3 and R4 independently each represent a fluorine atom or a C1-C6 perfluoroalkyl group, X1 represents a C1-C17 divalent saturated hydrocarbon group in which one or more —CH2— can be replaced by —O— or —CO— and which may be substituted with one or more fluorine atoms, and Z1+ represents an organic counter ion.

Abstract: A lithographic printing plate precursor includes a support and a layer containing a polymer compound having at least one support-adsorbing group at a terminal of a main chain.

Abstract: A negative resist composition including an alkali-soluble resin component (A), an acid generator component (B) that generates acid upon exposure, and a cross-linking component (C), the alkali-soluble resin component (A) including a polymeric compound (F) having a structural unit (f1) containing a base dissociable group and a structural unit (f2) containing a cross-linking group-containing group.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) containing a compound having a cation moiety represented by general formula (I) (in the formula, R5 represents a hydrogen atom or an organic group of 1 to 30 carbon atoms which may have a substituent; and Q5 represents a single bond or a divalent linking group).