Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1?) containing an acid dissociable, dissolution inhibiting group within the structure thereof and including a structural unit (a0) represented by general formula (a0-1) (R2 represents a divalent linking group, and A? represents an oxygen atom, a sulfur atom, or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom) and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group; or a polymeric compound (A1) including the structural unit (a0) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group.

Abstract: Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.

Abstract: The positive photosensitive resin composition of the present invention has a polyamide resin and a photosensitive agent, wherein the polyamide resin has a specific structure. The cured film of the present invention has a cured product of the positive photosensitive resin composition. The protecting film and insulating film of the present invention has the cured film each. The semiconductor device and display device of the present invention has the cured film each.

Abstract: There is provided a composition for forming a resist underlayer film having a large selection ratio of dry etching rate, exhibiting desired values of the k value and the refractive index n at a short wavelength, for example, in an ArF excimer laser, and further, exhibiting solvent resistance. A resist underlayer film forming composition for lithography comprises a linear polymer having, in a main chain thereof, at least one of an aromatic ring-containing structure and a nitrogen atom-containing structure; and a solvent, wherein to the aromatic ring or the nitrogen atom, at least one alkoxyalkyl group or hydroxyalkyl group is directly bonded.

Abstract: A radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent. The solid component contains a compound B which has (a) a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a di- to tetrafunctional aromatic ketone or aromatic aldehyde each having 5 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and (b) a molecular weight of 400 to 2000. The composition containing the compound B is useful as an acid-amplified, non-polymeric resist material, because it is highly sensitive to radiation such as KrF excimer lasers, extreme ultraviolet rays, electron beams, and X-rays, and provides resist patterns with a high resolution, high heat resistance, and high etching resistance.

Abstract: A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.

Abstract: A positive resist composition including: a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid-generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), the organic solvent (S) including an alcohol-based organic solvent having a boiling point of at least 150° C.; and a method of forming a resist pattern including: applying the positive resist composition on a substrate on which a first resist pattern is formed to form a second resist film; and subjecting the second resist film to selective exposure and alkali developing to form a resist pattern.

Abstract: An imide compound represented by the formula (I): wherein R1 represents a C1-C20 aliphatic hydrocarbon group etc., W1 represents —CO—O— etc., Q1 and Q2 each independently represent a fluorine atom etc., and A represents a group represented by the formula (I-1): wherein A1 represents —CH2—CH2— etc., and a chemically amplified resist composition containing the same.

Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid, and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) having an aromatic group, a structural unit (a5) represented by general formula (a5-1) shown below, and a structural unit (a1) containing an acid-dissociable, dissolution-inhibiting group. In the formula (a5-1), R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof.

Abstract: Disclosed is a photosensitive resin composition, comprising 0.1 to 20 parts by weight of a polygonal oligomeric silsesquioxane derivative, and 5 to 30 parts by weight of a compound generating acid by light, based on 100 parts by weight of a polyamide derivative.

Abstract: A salt represented by the formula (a1): wherein Q1 and Q2 each independently represent a fluorine atom or a C1-C4 perfluoroalkyl group, X1 represents —CO—O—Xa1— or —CH2—O—Xa2— wherein Xa1 and Xa2 independently each represent a C1-C15 alkylene group and one or more —CH2— in the alkylene group can be replaced by —O— or —CO—, Y1 represents a C3-C36 alicyclic hydrocarbon group or a C6-C24 aromatic hydrocarbon group, and the alicyclic hydrocarbon group and the aromatic hydrocarbon group can have one or more substituents, and one or more —CH2— in the alicyclic hydrocarbon group can be replaced by —O— or —CO—, and Z+ represents an organic cation.

Abstract: Disclosed are a photosensitive compound and a method of manufacturing the same. The photosensitive is composed of a naphthoquinonediazide sulfonic ester compound having at least one naphthoquinonediazide sulfoxy group, and having either at least one carboxy group with 1 to 8 carbon atoms or at least one alkoxy group with 1 to 8 carbon atoms, in one molecule.

Abstract: A positive-type photosensitive resin composition includes (A) a polyamide resin that includes a structural unit shown by the following formula (1) and a structural unit shown by the following formula (2), and (B) a photosensitive compound, the polyamide resin (A) having a weight average molecular weight (Mw) of 5000 to 80,000, and a cured film obtained by curing the positive-type photosensitive resin composition at 250° C. having a tensile modulus of elasticity of 2.0 to 4.0 GPa and a tensile elongation of 10 to 100%. According to the present invention, a positive-type photosensitive resin composition that can be cured at a low temperature and a highly reliable semiconductor device including a cured film of the positive-type photosensitive resin composition can be provided.

Abstract: The present invention provides a photoresist composition comprising: at least one selected from the group consisting of a monomer represented by the formula (I): wherein R1 represents a hydrogen atom or a methyl group, W1 represents a C3-C20 divalent saturated cyclic hydrocarbon group, A1 represents a single bond or *-O—CO—W1— wherein * represents a binding position to W1?N— and W1 represents a C1-C10 divalent saturated hydrocarbon group, a polymer consisting of a structural unit derived from the monomer represented by the formula (I) and a polymer consisting of a structural unit derived from the monomer represented by the formula (I) and a structural unit derived from a monomer represented by the formula (II): wherein R3 represents a hydrogen atom or a methyl group, A2 represents a single bond or *-O—CO—(CH2)n— wherein * represents a binding position to R4—, n represents an integer of 1 to 7 and R4 represents a C3-C20 saturated cyclic hydrocarbon group, a resin having an acid-labile group

Abstract: A photosensitive polymer composition, having (a) a polymer selected from polyimide precursors and polyimides having an acid group protected by a protecting group and having no amino group (—NH2) at the end; and (b) a compound that generates an acid when exposed to light and capable of deprotecting the protecting group from the acid group, is employed to form layers of a semiconductor device.

Abstract: A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.

Abstract: A polymeric compound including a structural unit (a0) represented by the structural unit (a0-1) shown below: (in the formula (a0-1), R1 represents a hydrogen atom, a lower alkyl group, or a halogenated lower alkyl group; R5 represents an alkyl group; R6 represents a substituent selected from the group consisting of an alkyl group, an alkoxy group, a halogen atom and a halogenated alkyl group; and e represents an integer of 0 to 5).

Abstract: A positive-type photosensitive composition including an alkali-soluble polymer formed through copolymerization of monomer (A) represented by the following General Formula (I) and other radical polymerizable monomer (B), a 1,2-quinonediazide compound, and a nanowire structure: where R1 represents a hydrogen atom or a methyl group, R2 represents a hydrogen atom or a C1 to C5 alkyl group, n is an integer of 1 to 5, and m is an integer of 1 to 7.

Abstract: A positive resist composition including a base component (A?) which exhibits increased solubility in an alkali developing solution under action of acid and generates acid upon exposure, the base component (A?) including a polymeric compound (A1?) having a structural unit (a5-1) represented by general formula (a5-1), a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) that generates acid upon exposure, the structural unit (a0-2) containing a group represented by general formula (a0-2?) (wherein X? represents an anion moiety represented by one of general formulas (1) to (5)).

Abstract: The object of the present invention is to provide a chemically amplified resist composition excellent in a resolution and a mask error enhancement factor. By employing the salt represented by the formulae (A1) as an acid generator of a resist composition, the above mentioned object is achieved. wherein Z+ represents an organic cation, Q1 and Q2 each independently represent a fluorine atom or a perfluoroalkyl group, Ra2 represents a divalent alicyclic hydrocarbon group pr the like, Ra2 represents an elimination group represented by the formulae (II-1) or (II-2). In the formulae (II-1) or (II-2), Ra3 and Ra4 each independently represent a hydrogen atom or an aliphatic hydrocarbon group, Ra5 represents an aliphatic hydrocarbon group, Ra6 represents a divalent aliphatic hydrocarbon group, and Ra7 represents an aliphatic hydrocarbon group.