Abstract: This description relates to active-pixel image sensors. Each pixel includes, at the surface of a semiconductor active layer, a photodiode region, a charge storage node and a transfer structure for transferring charges from the photodiode to the storage node after a charge integration time for charges generated by the light in the photodiode. The transfer structure includes a first transfer gate adjacent to the photodiode, a second transfer gate adjacent to the storage node, and an electron-multiplication amplifying structure located between the first and second transfer gates. The amplifying structure includes two separate accelerating gates and an intermediate diode region at a fixed surface potential, located between the two accelerating gates. A succession of alternating high and low potentials is applied to the accelerating gates while the charges are in transit in the transfer structure, before they are transferred to the storage node.

Abstract: A gas detection system with an inner ring cavity fiber laser using saturated absorption optical fiber is provided. The system comprising a ring fiber laser consisted of a pump source, a wavelength division multiplexer, a first active optical fiber, a first coupler, a fiber Bragg grating and a second coupler connected successively; an optical isolator coupled between said first active optical fiber and said first coupler; a second active grating connected between said fiber Bragg grating and said first coupler; a detection gas chamber connected between said first coupler and said second coupler; a first photoelectric detector for detecting the laser intensity outputted from said ring fiber laser to generate a first light intensity signal; a second photoelectric detector for receiving the intensity measuring beam passing through the detection gas chamber to generate a second light intensity signal; and a feedback control unit.

Abstract: According to one embodiment, a solid-state imaging device including a plurality of pixels two-dimensionally arranged at a preset pitch in a semiconductor substrate is provided. Each of the pixels is configured to include first and second photodiodes that photoelectrically convert incident light and store signal charges obtained by conversion, a first micro-lens that focuses light on the first photodiode, and a second micro-lens that focuses light on the second photodiode. The saturation charge amount of the second photodiode is larger than that of the first photodiode. Further, the aperture of the second micro-lens is smaller than that of the first micro-lens.

Abstract: The encoder includes a scale provided with first and second tracks, a sensor relatively movable with the scale and reading periodic patterns to output periodic signals, and a processor calculating a position in a relative movement direction of the scale and sensor by using the periodic signals. The first track includes first and second periodic patterns whose periods are mutually different, and the second track includes a third periodic pattern whose period is different from that of the second pattern and is an integral multiple or an integral fraction of that of the first periodic pattern. The processor calculates, by using a phase difference between the periodic signals corresponding to the first and third periodic patterns, the position in which a sensor reading error due to a relative displacement between the first and second tracks and the sensor is corrected.

Abstract: A solar thermal concentration system has a receiver, a rail system having a plurality of concentric rails circularly disposed about the receiver, a plurality of movable carts connected adjacent one another and spanning two concentric rails of the rail system, motor means on a movable cart dispersed in the plurality of movable carts, a heliostat mirror on a plurality of movable carts, and a controller for tracking the Sun and controlling a position of the array with respect to the receiver and the Sun. The plurality of movable carts over all of the concentric rails define an array of heliostat mirrors having a predetermined arc dimension configured to maximize mirror area based on cosine efficiency principle. Each heliostat mirror and each movable cart having motor means is in communication with the controller for moving the carts and heliostat mirrors with respect to the receiver and the Sun.

Abstract: A particle detection system is provided. The particle detection system includes at least one tapered optical fiber, a light source configured to transmit light through the at least one tapered optical fiber, a photodetector configured to measure a characteristic of the light being transmitted through the at least one optical fiber, and a computing device coupled to the photodetector and configured to determine whether a nanoparticle is present within an evanescent field of the at least one tapered optical fiber based on the measured light characteristic.

Abstract: An intensity of radiation emitted from at least two laser diodes of a projecting apparatus is optimized by providing an offset distance between at least two focal points of the at least two laser diodes and providing a maximum value for radiation intensity emitted by each of the laser diodes, irrespective of simultaneous transmission by one of the laser diodes with another of the laser diodes. The intensity of the radiation emitted from each of the at least two laser diodes is adjusted such that an aggregated value of the radiation intensity emitted by all of the laser diodes within a predefined period of time may exceed a threshold value allowed for the maximum permissible exposure to radiation.

Abstract: A radiation sensor is provided comprising: one or more first pixels and one or more second pixels. A first optical element is provided over the first and second pixels, having a first field of view. A second optical element is provided over the one or more second pixels, having a second field of view. The second optical element is positioned between the first optical element and the one or more second pixels, wherein the first field of view is substantially narrower than, and lies substantially within, the second field of view.

Abstract: An increased sense node capacitance, mainly for 3D time-of-flight (TOF) applications, includes a storage structure that combines the advantages of gate and diffusion capacitance in order to improve the overall capacitance. The storage structure provides higher capacitance per unit area and accordingly a better fill-factor/sensitivity of the pixel; improved noise behaviour because of the use of gate capacitances, better protection against interacting signals and thus better signal quality.

Abstract: In accordance with an embodiment, a pixel includes a first stage coupled to a second stage. The second stage includes a sampling capacitor and a subtraction capacitor.

Abstract: A physical information acquisition method in which a corresponding wavelength region of visible light with at least one visible light detection unit coupled to an image signal processing unit is detected, each said visible light detection unit comprising a color filter adapted to transmit the corresponding wavelength region of visible light; a wavelength region of infrared light with at least one infrared light detection unit coupled to the image signal processing unit is detected; and, with the signal processing unit, a first signal received from the at least one visible light detection unit by subtracting a product from said first signal is corrected, said product resulting from multiplication of a second signal received from the at least one infrared light detection unit and a predetermined coefficient factor.

Abstract: An optical module comprising a tunable interference filter including a first substrate, a second substrate facing the first substrate, a first reflective film formed on the first substrate, a second reflective film formed on the second substrate and facing the first reflective film, a gap changing unit changing a gap between the first reflective film and the second reflective film, and a driving electrode line electrically connected to the gap changing unit, a temperature sensor detecting temperature of the tunable interference filter and including a first sensor wiring and a second sensor wiring, the first sensor wiring being electrically connected to the driving electrode line, a switch electrically connected to the second sensor wiring, and a temperature detecting circuit electrically connected to the switch.

Abstract: An optical-interrupter provides a mechanically integrated electric light source and electric light sensor positioned across a gap to transmit a light beam across the gap that may be interrupted with an opaque vane. The optical-interrupter uses conventional LEDs for both the light source and a light receiver. An integrated circuit comparator may be used to provide an adjustable threshold for the determination of whether the light beam is blocked.

Abstract: An optoelectronic sensor for recognizing object edges of objects moved relative to the sensor, has a light transmission device with at least one light transmitter, in particular at least two light transmitters, for generating a respective collimated or focused transmitted light beam. The sensor has at least two light receivers for imaging a light spot produced by the respective transmitted light beam on an object, wherein the two light receivers are arranged on two mutually opposite sides of the light transmission device, and has an evaluation unit which is designed to compare the two reception intensities of the two images of the respective light spot taken by the two light receivers with one another and to evaluate the result of the respective comparison to recognize an object edge.

Abstract: A solid-state imaging device includes plural photodiodes which are formed in a photodiode area of a unit pixel with no element separating area interposed therebetween and in which impurity concentrations of pn junction areas are different from each other.

Abstract: The present invention provides a CMOS type semiconductor image sensor module in which the aperture ratio of the pixel is improved and at the same time chip use efficiency is attempted to be improved and furthermore, simultaneous shuttering of all the pixels is made possible, and a method of manufacturing the same. The semiconductor image sensor module of the present invention is constituted by laminating a first semiconductor chip including an image sensor in which a plurality of pixels, each constituted by a photoelectric conversion element and transistors, are arranged, and a second semiconductor chip including an A/D converter array. Preferably, a third semiconductor chip including a memory element array is further laminated. Also, a semiconductor image sensor module of the present invention is constituted by laminating a first semiconductor chip provided with the aforesaid image sensor and a fourth semiconductor chip provided with an analog type nonvolatile memory array.

Abstract: A color filter is formed using a simple manufacturing method, and bias application to a pixel separating electrode allows sensitivity in low illumination intensity to be improved. In a solid-state imaging element, in which a plurality of unit pixel sections are disposed two dimensionally on a side closer to a front surface of a semiconductor substrate or a semiconductor layer, each unit pixel section having a light receiving section for generating a signal charge by light irradiation, an adjoining unit pixel section is formed in the same color to allow for lesser alignment accuracy of the color filter. A pixel separating electrode is formed in the adjoining unit pixel section, and a signal charge is shared by bias application during low illumination intensity, thereby improving an effective photodiode area.

Abstract: A readout apparatus and method for processing spatially distributed signals is disclosed. The readout apparatus and method may reduce/eliminate the impact gain variations among a plurality of sensing channels. This is done by continuously varying the dispersion properties of a signal distribution device, which may induce a spatial shift of the signal distribution during data acquisition, allowing the distributed signals to move across the sensor area. Shifting of the distributed signals may occur multiple times, hence eliminating the impact of gain variation across the sensor array. The accumulated data may be re-assembled subsequently to complete the readout operation.

Abstract: A light emitting unit array including a plurality of micro-light emitting diodes (?-LEDs) is provided. The micro-light emitting diodes are arranged in an array on a substrate, and each of the micro-light emitting diodes includes a reflection layer, a light emitting structure, and a light collimation structure. The light emitting structure is disposed on the reflection layer, and includes a first type doped semiconductor layer, an active layer, and a second type doped semiconductor layer that are stacked sequentially. At least a portion of the first type doped semiconductor layer, the active layer, and the second type doped semiconductor layer are sandwiched between the reflection layer and the light collimation structure.

Abstract: Disclosed are methods and systems for optoelectronic detection and location of moving objects. The disclosed methods and systems capture one-dimensional images of a field of view through which objects may be moving, make measurements in those images, select from among those measurements those that are likely to correspond to objects in the field of view, make decisions responsive to various characteristics of the objects, and produce signals that indicate those decisions. The disclosed methods and systems provide excellent object discrimination, electronic setting of a reference point, no latency, high repeatability, and other advantages that will be apparent to one of ordinary skill in the art.