Abstract: A photoelectric conversion element of the present invention includes: a first electrode being linear; a second electrode; and an electrolyte. The first electrode and the second electrode are disposed via the electrolyte. The first electrode includes a first linear material which includes a copper wire and a metal coating which coats the copper wire and a dye-carrying porous oxide semiconductor layer disposed on an outer circumference of the first linear material.

Abstract: A solar panel backside film used in solar panel constructions. The film comprises a PET film having a net peak area as measured by differential scanning calorimetry of about ?15 J/g to about 5 J/g measured from the endpoint of the glass transition (Tg) up to 230° C., and an additive to opacify the PET film. A polymeric layer is adhered to the PET film to create a solar panel backside film. The solar panel backside film generally has a reflectivity of 50% or greater at a point in the visible range of light. Additionally, the solar panel backside film, when applied to a solar panel and exposed to 2000 hours at 85° C. and 85% relative humidity, does not result in exfoliation or visible cracks in the PET film.

Abstract: A multi-junction photovoltaic cell includes at least two P-N junctions electrically connected to each other in series. Each P-N junction includes a P-type absorber layer and a N-type emitter layer, each P-type absorber layer including a plurality of alternating thin film layers of zinc telluride and lead telluride, wherein zinc telluride and lead telluride have respective bandgaps when in bulk thickness and the effective bandgap of each P-type absorber layer is between the respective bandgaps. The effective bandgap of at least one P-type absorber layer is different from that of at least one other P-type absorber layer.

Abstract: A method and system for using a method of pre-equilibrium ballistic charge carrier refraction comprises fabricating one or more solid-state electric generators. The solid-state electric generators include one or more of a chemically energized solid-state electric generator and a thermionic solid-state electric generator. A first material having a first charge carrier effective mass is used in a solid-state junction. A second material having a second charge carrier effective mass greater than the first charge carrier effective mass is used in the solid-state junction. A charge carrier effective mass ratio between the second effective mass and the first effective mass is greater than or equal to two.

Abstract: A photovoltaic module may include a transparent conductive layer on a substrate a first submodule including a first plurality of photovoltaic cells connected in series and a second submodule including a second plurality of photovoltaic cells connected in series.

Abstract: Integrated solar modules are provided. In one example, a corner cap for coupling to a solar module is described. The solar module has a solar panel and a frame circumscribing the solar panel. The corner cap includes a first wall and a second wall. The first wall and the second wall define a corner angle substantially the same as an angle defined by a corner of the solar module. The corner cap includes a flange extending from the corner cap. The flange is configured for coupling the corner cap to a solar module.

Abstract: This disclosure is directed to apparatuses, systems, and methods associated with the stowing, deploying, and deployment of a solar cell array. With reference to some exemplary embodiments this disclosure teaches apparatuses, systems, and methods directed to a solar cell array system that is a relatively lightweight, compact, and self-contained structure that securely stores, protects, and deploys the solar array. With reference to some exemplary embodiments this disclosure teaches apparatuses, systems, and methods for deploying a solar cell array that is held in the deployed configuration by self-contained compressive force and tensile force members such that no loads are carried through the solar cell panels.

Abstract: In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a transparent layer; a first porous layer disposed on the transparent layer, wherein the first porous layer comprises a plurality of pores extending through a thickness of the first porous layer; a first semiconductor material disposed in the plurality of pores to form a patterned first semiconductor layer; and a second semiconductor layer disposed on the first porous layer and the patterned first semiconductor layer, wherein the patterned first semiconductor layer is substantially transparent. Method of making a photovoltaic device is also provided.

Abstract: The present disclosure provides a catalyst-free growth mode of defect-free Gallium Arsenide (GaAs)-based nanoneedles on silicon (Si) substrates with a complementary metal-oxide-semiconductor (CMOS)-compatible growth temperature of around 400° C. Each nanoneedle has a sharp 2 to 5 nanometer (nm) tip, a 600 nm wide base and a 4 micrometer (?m) length. Thus, the disclosed nanoneedles are substantially hexagonal needle-like crystal structures that assume a 6° to 9° tapered shape. The 600 nm wide base allows the typical micro-fabrication processes, such as optical lithography, to be applied. Therefore, nanoneedles are an ideal platform for the integration of optoelectronic devices on Si substrates. A nanoneedle avalanche photodiode (APD) grown on silicon is presented in this disclosure as a device application example. The APD attains a high current gain of 265 with only 8V bias.

Abstract: Techniques for improving energy conversion efficiency in photovoltaic devices are provided. In one aspect, an antimony (Sb)-doped film represented by the formula, Cu1-yIn1-xGaxSbzSe2-wSw, provided, wherein: 0?x?1, and ranges therebetween; 0?y?0.2, and ranges therebetween; 0.001?z?0.02, and ranges therebetween; and 0?w?2, and ranges therebetween. A photovoltaic device incorporating the Sb-doped CIGS film and a method for fabrication thereof are also provided.

Abstract: A solar cell includes a back electrode, a silicon substrate, a doped silicon layer and an upper electrode. The back electrode is located on and electrically connected to a lower surface of the silicon substrate. A number of cavities are formed on an upper surface of the silicon substrate. The doped silicon layer is located on the inside surface of the cavities. The upper electrode is located on the upper surface of the silicon substrate. The upper electrode includes a carbon nanotube structure.

Abstract: A dye-sensitized solar cell includes a negative electrode, a positive electrode, a photoelectrode mounted between the negative electrode and the positive electrode, and an electrolyte located between the photoelectrode and the positive electrode. The photoelectrode is adapted to absorb a dye. The photoelectrode includes a dense layer, a scattering layer and a carrier transport layer. The dense layer, the scattering layer and the carrier transport layer are stacked one upon another. The dense layer is formed by titanium dioxide nanoparticles having a diameter of 15-20 nm. The scattering layer is formed by titanium dioxide nanospheres having a diameter of 200-500 nm. The carrier transport layer is formed by titanium dioxide nanotubes having a length of 300-800 nm. Furthermore, a photoelectrode for the dye-sensitized solar cell, as well as a method for producing the photoelectrode, are also disclosed.

Abstract: A photovoltaic a substrate having a plurality of individual serially connected solar cells defined thereon. A bus tape is applied along respective ones of said cells at generally opposite longitudinal ends of the substrate for collecting the charge generated by the plurality of solar cells. A conductive member is interconnected between the bus tapes and is disposed beneath the bus tapes and in direct conductive contact with the respective cells. A junction box is configured for delivering the generated charge to an external load or other component, with the conductive member connected to the junction box.

Abstract: The present invention provides an integrated wiring member (46, 47, 48) for a solar cell module, including a first wiring member, a second wiring member, and an insulating and protecting film for insulating the first wiring member and the second wiring member from each other. Herein, the first wiring member and the second wiring member are integrated with each other through the insulating and protecting film.

Abstract: A method of transferring electrons with a light energy conversion material is described. The material includes a silica porous material having silicon atoms chemically bonded with an organic group that is an electron donor in a skeleton thereof, and an electron acceptor disposed in at least one portion among a pore, the skeleton and the outer circumference of the porous material. The method includes absorbing light energy by the organic group and transferring electrons excited by the light energy to the electron acceptor.

Abstract: A solar cell with an electrode lead-out structure that a unitary cell to be easily mounted on and removed from a connection side substrate is provided. A solar cell has a power generation electrode including a transparent electrode, a collector electrode, and a power generation layer formed on a translucent substrate and is arranged opposite an opposite electrode so that the power generation layer is sandwiched between the power generation electrode and the opposite electrode. A through-hole is formed in a substantially central portion of the translucent substrate. Another through-hole is formed in another substrate and its periphery forms an annular exposed portion that does not overlap the opposite electrode. A lead-out portion for the collector electrode is formed on the exposed portion. Metal thin films are connected together to form lead-out portions. Thus, a positive electrode and a negative electrode are led out in the same direction.

Abstract: A solar energy harvester comprises: an elongated stationary solar irradiance converter assembly; a concentrator comprised of a substantially flat array of flat reflective heliostatic slats disposed at tilt angles to concentrate the sun onto the converter assembly, said slats each rotating in elevation about a north-south axis; sun sensor detecting the efficacy of concentration as the sun traverses; and control circuitry and drive motor positioning the collector in elevation according to the sun sensor so that the slat array tracks and faces the sun whenever the solar incident energy is greater than a selectable threshold level.

Abstract: A thin film type solar cell and a method for manufacturing the same is disclosed, the thin film type solar cell comprising a substrate; front electrodes arranged at fixed intervals on the substrate by separating parts for dividing the solar cell into a plurality of unit cells, wherein each separating part is interposed between the front electrodes; semiconductor layer patterns arranged at fixed intervals on the front electrodes by the interposed separating parts; rear electrodes arranged at fixed intervals on the semiconductor layer patterns by the interposed separating parts; and auxiliary electrodes to electrically connect the front electrodes with the rear electrodes, in which the front electrode is electrically connected with the rear electrode through the use of auxiliary electrode, so that it is possible to minimize the laser-scribing procedure for dividing the solar cell into the plurality of unit cells, thereby preventing the particles from being generated.

Abstract: A dye-sensitized solar cell is provided, wherein it can be produced by a relatively easy and simple process and ensures high conversion efficiency even in cases where the thickness of the porous semiconductor layer is increased. The dye-sensitized solar cell 10 includes, in the interior of or on the conductive-substrate-side surface of the porous semiconductor layer 16, conductive metal film 20, such as a film of tungsten, having a large number of randomly located penetrations 24. Penetrations 24 of the conductive metal film 20 are formed by forming a fine-particle layer on the surface of the porous semiconductor layer, forming a conductive metal film on the surface of the fine-particle layer, and making the fine-particle layer disappear by heating or solvent-cleaning.

Abstract: The present invention provides a photoelectric conversion device in which changes in photoelectric conversion efficiency with time can be inhibited. The photoelectric conversion device according to the present invention includes: a pair of electrodes; an electrolytic solution disposed between the pair of electrodes; and a sealing portion that links the pair of electrodes and is provided around the electrolytic solution. At least part of the sealing portion includes at least one inorganic sealing portion constituted by an inorganic material and at least one resin sealing portion constituted by a material including a resin. The inorganic sealing portion and the resin sealing portion are disposed along a direction connecting the pair of electrodes.