Abstract: A reactor and method for seeded growth of nano-products such as carbon nanotubes, wires and filaments in which selected precursors are introduced into the reactor which is heated to a temperature sufficient to induce nano-product formation from interaction between the precursor gases and a nanopore templated catalyst. The selected precursors are segregated in the reactor through a plate defining two chambers which are sealed off from each other except for a void space provided in the plate. The void space is closed off by a membrane having nanopores and a catalyst formed as a layer. Atomic transfer of material from the selected precursors to form the nano-products on the catalyst layer in the other of the chambers occurs by diffusion through the catalyst layer to form the nano-product on the other of the chambers absent a pressure drop between the two chambers.

Abstract: A method or control strategy in a coating apparatus for use in a coating process can include controlling differential gas pressures among multiple selected localized zones in a coating chamber with respect to each other. The controlled differential gas pressure of the multiple selected localized zones is used to influence how a coating deposits on at least one component. The localized zones can be selected from a first localized zone around the component, a second localized zone adjacent the source of coating material, a third localized zone that diverges from the second localized zone toward the first localized zone, and a fourth localized zone that circumscribes at least the third localized zone.

Abstract: A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.

Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.

Abstract: Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a method of depositing a cobalt layer atop a substrate includes: (a) providing a substrate to a substrate support that is rotatable between two processing positions; (b) exposing the substrate to a cobalt containing precursor at a first processing position to deposit a cobalt layer atop the substrate, wherein the substrate at the first processing position is at a first temperature; (c) rotating the substrate to a second processing position; and (d) annealing the substrate at the second processing position to remove contaminants from the cobalt layer, wherein the substrate at the second processing position is at a second temperature greater than the first temperature.

Abstract: The present invention relates to a method for manufacturing components, in particular components of turbomachines, such as aircraft engines, wherein an additive method is used at least partially for the manufacture of the component (1), wherein at least one surface region (3) of the additively manufactured portion of the component (1) is provided with a smoothing layer (2), which is deposited by vapor deposition. In addition, the invention relates to a correspondingly manufactured component of a turbomachine.

Abstract: A system and method for ceramic doping of carbon fiber materials is disclosed. A carbon fiber preform may be made of carbonized oxidized PAN fibers and may be placed in contact with a nanoparticle suspension having nanoparticles and a dispersion medium. The nanoparticles may impregnate the carbon fiber preform, causing it to become a doped carbon fiber preform. The doped carbon fiber preform may be densified. The doped carbon fiber preform may be densified by conventional CVI processing techniques. The doped carbon fiber preform may be densified by thermal gradient CVI.

Abstract: A graphene producing method which is capable of increasing a size of each domain of graphene. A plasma CVD film formation device that activates a catalyst metal layer formed on a wafer; modifies the same into an activated catalyst metal layer; decomposes a C2H4 gas as a low reactivity carbon-containing gas by plasma in a space that opposes the wafer; and decomposes a C2H2 gas as a high reactivity carbon-containing gas by heat in the space.

Abstract: A method of forming a thin film on a substrate which includes a step of contacting a surface with a precursor compound having a transition metal and one or more alkyl-1,3-diazabutadiene ligands is provided. The resulting modified surface is then contacted with an activating compound.

Abstract: A glass sheet semiconductor deposition system (20) for coating semiconductor material on glass sheets is performed by conveying the glass sheets vertically suspended at upper extremities thereof by a pair of conveyors (38) through a housing (22) including a vacuum chamber (24). The glass sheets are conveyed on shuttles (42) through an entry load station (26) into the housing vacuum chamber (24), through a heating station (30) and at least one semiconductor deposition station (32, 34) in the housing (22), and to a cooling station (36) prior to exiting of the system through an exit load lock station (28). The semiconductor deposition station construction includes a deposition module (102) and a radiant heater (104) between which the vertical glass sheets are conveyed for the semiconductor deposition.

Abstract: The present application provides methods and apparatus for processing ceramic fibers for the manufacture of ceramic matrix composites (CMCs). One method may include providing at least one frame including a planar array of unidirectional ceramic fibers extending across a void thereof. The method may further include depositing a coating on the ceramic fibers of the at least one frame via a chemical vapor deposition (CVD) process. The method may also include impregnating the coated ceramic fibers with a slurry including a ceramic matrix precursor composition to form at least one CMC prepreg, such as a prepreg tape. The ceramic fibers may be substantially SiC fibers, for example.

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Abstract: Systems and methods are provided for material processing. An example apparatus includes a process-kit component containing a first groove and a second groove. The first groove and the second groove are disposed to form a pattern on a surface of the process-kit component. The process-kit component is configured to be placed into a chamber to reduce material deposition on one or more parts of the chamber during material processing.

Abstract: Described herein are precursors and methods for forming silicon-containing films.

Abstract: Systems and methods of reducing outgassing of a substance within a reaction chamber of a reactor are disclosed. Exemplary methods include depositing a barrier layer within the reaction chamber and using a scavenging precursor to react with species on a surface of the reaction chamber. Exemplary systems include gas-phase deposition systems, such as atomic layer deposition systems, which include a barrier layer source and/or a scavenging precursor source fluidly coupled to a reaction chamber of the system.

Abstract: A coating system for coating a part (10), such as a turbine blade or vane, has a mask (14) positioned adjacent to a first portion (16) of the part (10) to be coated and a mechanism (30) for moving the mask (14) relative to the part (10). The mechanism (30) may be a gear mechanism or a magnetic mechanism.

Abstract: Niobium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Niobium-containing films on one or more substrates via vapor deposition processes using the Niobium-containing film forming compositions.

Abstract: A plasma-enhanced chemical vapor deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.

Abstract: STEP 1 (Pressure increasing step) increases pressure within a raw material container to first pressure by supplying carrier gas to the inside of the raw material container by PCV. STEP 2 (Pressure decreasing step) decreases the pressure within the raw material container to second pressure by operating an exhaust device and discarding the raw material gas from a raw material gas supply pipe via an exhaust bypass pipe. STEP 3 (Stabilization step) stabilizes the vaporization efficiency for vaporizing the raw material inside the raw material container by operating the exhaust device and discarding the raw material gas while introducing the carrier gas into the raw material container. STEP 4 (Film forming step) supplies the raw material gas to the inside of the processing container via the raw material gas supply pipe and deposits a thin film on a wafer by CVD.

Abstract: Disclosed is a rotation/revolution type vapor phase growth apparatus that allows for automatic meshing between an external gear and an internal gear. In the apparatus, on tooth side surfaces of at least one kind of a plurality of external gear members provided rotatably in a circumferential direction of an outer periphery of a disk-shaped susceptor and a ring-shaped fixed internal gear member having an internal gear to mesh with the external gear members, there is provided a guide slope that abuts against a tooth side surface of the other kind of the gear member(s) to guide both kinds of the gear members into a meshed state when both kinds of the gear members move from a non-meshed state to the meshed state.