Abstract: A laser diode chip is described, comprising including: an n-type semiconductor region, a p-type semiconductor region, and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, an n-type contact and a p-type contact, at least one heating element arranged on a side of the laser diode chip facing the p-type semiconductor region, the heating element functioning as a resistance heater, and at least one metallic seed layer, wherein the heating element comprises a part of the seed layer, and wherein the p-type contact is arranged on a further part of the seed layer.

Abstract: A semiconductor laser includes an active region, a first distributed-Bragg-reflector region disposed contiguously with the active region, and a second distributed-Bragg-reflector region. The first distributed-Bragg-reflector region is formed contiguously with one side of the active region in a waveguide direction and includes a first diffraction grating. The second distributed-Bragg-reflector region is formed contiguously with to the other side of the active region in the waveguide direction and includes a second diffraction grating. The first diffraction grating includes recessed portions formed through a diffraction grating layer formed in the first distributed-Bragg-reflector region and convex portions adjacent to the recessed portions. The diffraction grating layer is made of a dielectric material.

Abstract: A light-emitting device includes an insulating base member having thermal conductivity of 10 W/m·K or more; a light-emitting element provided on a front surface side of the base member; a first rear surface wire that is provided on a rear surface side of the base member and is connected to one of a cathode electrode and an anode electrode of the light-emitting element; a second rear surface wire that is provided on the rear surface side of the base member and is connected to the other one of the cathode electrode and the anode electrode; and a reference potential wire that is provided on the rear surface side of the base member and is connected to an external reference potential.

Abstract: A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: growing a first cladding layer with a {0001} growth plane; growing a guide layer on the first cladding layer; forming holes which are two-dimensionally periodically arranged within the guide layer; etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and growing an active layer and a second cladding layer on the first embedding layer, The step includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.

Abstract: An active laser medium for emitting a light beam by laser effect includes an X—F2-doped crystal, wherein X is a chemical element from the alkaline-earth family and F is fluorine. The crystal is doped with trivalent ions including: a first category of optically active dopant ions, in which each dopant ion is an ion of a first rare earth; and a second category of optically inactive dopant ions, referred to as buffer ions, in which each dopant ion is an ion of a rare earth different from the first rare earth. The second category of dopant ions has at least ions of a second rare earth and ions of a third rare earth, different from one another. The invention provides an active laser medium that can be used to obtain both a desired emission spectrum shape and a high thermal conductivity.

Abstract: The present disclosure describes various linear VCSEL arrays, as well as VCSEL array chips incorporating such linear VCSEL arrays, and modules, host devices and other apparatus into which one or more of the linear VCSEL arrays are integrated. Implementations can include, for example, varying the aperture size of the VCSELs, tapering the shape of the transmission line, and/or changing the density of the VCSELs.

Abstract: Provided is a laser device in which: a laser medium doped with ytterbium emits light upon absorption of excitation light; the light emitted by the laser medium is amplified to obtain output light; and the output light is outputted in the form of a plurality of pulses. In the laser device, a spatial filter is disposed in the optical path of the light emitted by the laser medium or is disposed in the optical path of the output light outputted from an optical resonator, the spatial filter being configured to filter out a portion of the light or of the output light around the optical axis.

Abstract: A dielectric-grating waveguide free-electron laser device generating coherent or laser-like radiation is provided. An electron beam propagates next to a dielectric waveguide with a built-in grating structure to generate highly confined coherent or laser-like radiation in the waveguide through the Bragg resonance, the backward-wave resonance, or the Fabry-Perot resonance provided by the grating-waveguide structure. The dielectric-grating waveguide can be made of linear optical materials or nonlinear optical materials or combination of linear and nonlinear optical materials to enable versatile functionalities, such as laser generation, laser-wavelength conversion, and laser signal processing. Owing to the build-up of the laser modes inside the dielectric waveguide, coherent or laser-like Smith-Purcell radiation is also generated above the grating via coupling and bunching of the electrons with the surface mode fields.

Abstract: Provided is a tunable laser source including a plurality of optical waveguides, at least three optical resonators provided between the plurality of optical waveguides and optically coupled to the plurality of optical waveguides, the at least three optical resonators having different lengths, and at least one optical amplifier provided on at least one of the plurality of optical waveguides, wherein a ratio of a first length of a first optical resonator of the at least three optical resonators to a second length of a second optical resonator of the at least three optical resonators is not an integer.

Abstract: The passively q-switched diode end-pumped solid-state laser is used the gain medium made of Er:Yb doped crystal and the Q-switch made of Co2+:MgAl2O4 crystal. The optical elements are optimally designed for the resonator to achieve pulse energy in a range 0.5 mJ?E?2 mJ with the pulse width in a range of 4 ns-15 ns. The resonator is appropriate to use in laser rangefinders, target designator, and other products in military and civilian applications.

Abstract: The surface emitting laser device according to the embodiment includes a substrate, a first metal layer disposed on the substrate, a second metal layer disposed on the first metal layer, and a third metal layer disposed between the first metal layer and the second metal layer. The first to third metal layers may include different materials, and the second metal layer may include copper (Cu). The third metal layer may prevent diffusion of copper from the second metal layer into the first metal layer.

Abstract: A fiber laser system including: fiber laser units each including an excitation light source; a combiner that combines laser beams generated by the respective fiber laser units; and a controller that controls strength of a driving current supplied to each of the excitation light sources and reduces a difference in power between the respective laser beams.

Abstract: A drive device according to the present disclosure includes a drive circuit (10) and a detection circuit (20). The drive circuit (10) drives a plurality of channels on an individual basis. The plurality of channels includes a plurality of light emitting elements (5). The detection circuit (20) collectively detects abnormalities of all the channels. Further, the drive device (10) is electrically and mechanically connected, with a plurality of microbumps (4), to a light emitting element array that includes the plurality of light emitting elements (5).

Abstract: In an embodiment, the gain-guided semiconductor laser includes a semiconductor layer sequence and electrical contact pads. The semiconductor layer sequence includes an active zone for radiation generation, a waveguide layer, and a cladding layer. The semiconductor layer sequence further includes a current diaphragm layer which is electrically conductive along a resonator axis (R) in a central region and electrically insulating in adjoining edge regions. Transverse to the resonator axis (R), the central region includes a width of at least 10 ?m and the edge regions includes at least a minimum width. The minimum width is 3 ?m or more. Seen in plan view, the semiconductor layer sequence as well as at least one of the contact pads on the semiconductor layer sequence are continuous components extending in the central region as well as on both sides at least up to the minimum width in the direction transverse to the resonator axis (R) adjoining the central region and beyond the central region.

Abstract: A surface-emitting semiconductor laser including: an active layer including a nitride semiconductor; a first semiconductor layer of a first electrical conduction type and a second semiconductor layer of a second electrical conduction type that are opposed to each other with the active layer therebetween; and a current confinement layer that is opposed to the active layer with the second semiconductor layer therebetween and has an opening, in which a side surface of the current confinement layer is inclined at at least a portion of a peripheral edge of the opening.

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

Abstract: [Object] To provide a vertical cavity surface emitting laser element and an electronic apparatus that have high light emission efficiency. [Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: an active layer; a first cladding layer; and an intermediate layer. The first cladding layer is provided on the active layer. The intermediate layer is provided on the first cladding layer, electrons in the intermediate layer having potential higher than potential of electrons in the first cladding layer, holes in the intermediate layer having potential higher than potential of holes in the first cladding layer.

Abstract: A semiconductor laser device is provided with a semiconductor layer including an active layer and a plurality of cladding layers sandwiching the active layer. The active layer includes a stripe-shaped active region, a pair of first refractive index regions and a pair of second refractive index regions sandwiching the active layer and the pair of first refractive index regions. When ? is the laser oscillation wavelength, na is the effective refractive index of the active region, nc is the effective refractive index of the first refractive index regions, nt is the effective refractive index of the second refractive index regions, w is the width of the active region, and m is a positive integer, the semiconductor laser device satisfies na>nt>nc, and the conditions of equations (5), (8) and (9).

Abstract: A semiconductor light emitting device includes: a semiconductor light emitting element including a substrate and a plurality of light emitters arranged along an upper surface of the substrate; a first base disposed below a lower surface of the substrate; and a first bonding layer which bonds the semiconductor light emitting element to the first base. In the semiconductor light emitting device, a thermal conductivity of the substrate is higher than a thermal conductivity of the first bonding layer, and a thickness of the first bonding layer is less on one end side than on an other end side in an arrangement direction in which the plurality of light emitters are arranged.

Abstract: A detection circuit (20) according to the present disclosure includes a multiple-input one-output operational amplifier (30). The operational amplifier (30) includes a first transistor group (31) and a second transistor (32). The first transistor group (31) includes plural transistors connected in parallel such that operating voltages for plural light emitting elements (5) are inputted individually to gates of the plural transistors, the gates being non-negated input terminals of the operational amplifier. The second transistor (32) cooperates with the first transistor group (31) to form a differential configuration and has a gate which is a negated input terminal of the operational amplifier and to which an output from an output terminal is negatively fed back.