Abstract: An optical emission array includes an optical input portion configured to provide a parent laser source for the optical emission array, and an optical output portion including a plurality of child laser emitters. Each child laser emitter of the plurality of child laser emitters is injection-locked to the parent laser source. The optical emission array further includes at least two optical distribution branches (i) disposed between the optical input portion and the optical output portion, and (ii) optically connecting at least two child laser emitters of the plurality of child laser emitters, respectively, to the parent laser source.

Abstract: Provided is a sequential-pulse single-frequency laser power amplification apparatus, which comprises a sequence control unit for modulating and switching a source laser to output a primary laser, and a power amplification unit for amplifying the primary laser to output a secondary laser. Also provided is a sequence controllable multi-laser system comprising a plurality of single-frequency and/or multi-frequency laser power amplification apparatuses. This allows a single ultra-narrow linewidth laser device to meet the experimental requirements of multiple platforms in an atomic experiment, achieving high performance at low costs.

Abstract: A method of incorporating a control structure within a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming an active region over the first mirror, forming a spacer on a surface of the active region, forming a control structure on a surface of the spacer, and forming a second mirror over the control structure. The active region and the spacer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence. The second mirror is formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The control structure is formed using a chemical etching process during a transition period between the MBE phase and the MOCVD phase of the multiphase growth sequence.

Abstract: A solid-state laser system includes a gain medium having an optical resonator defined therein. The gain medium is co-doped with first and second active elements. The first active element is Er3+ and the second active element is Ho3+ or Dy3+. The solid-state laser system also includes a pump source coupled to the gain medium for pumping the gain medium with pump light.

Abstract: An optical semiconductor device includes an active layer having a plurality of quantum dot layers. The plurality of quantum dot layers include: a first quantum dot layer doped with a p-type impurity; and a second quantum dot layer doped with an n-type impurity and having an emission wavelength different from that of the first quantum dot layer.

Abstract: A laser apparatus includes a semiconductor laser element, a waveform calculation unit for calculating input waveform data, a driver circuit for supplying a drive current having a temporal waveform according to the input waveform data to the semiconductor laser element, an optical amplifier for amplifying laser light output from the semiconductor laser element, and a light waveform detection unit for detecting a waveform of laser light after the amplification output from the optical amplifier. The waveform calculation unit compares the waveform of the laser light after the amplification detected by the light waveform detection unit with a target waveform, adjusts a temporal waveform of the input waveform data, and brings the waveform of the laser light after the amplification close to the target waveform.

Abstract: A resonating optical amplifier includes a laser pump cavity defined by a first mirror and a second mirror with a laser pump gain medium configured within a first portion of the laser pump cavity and a Raman amplifier within a second portion of the laser pump cavity. A circulating pump-laser light is introduced to the laser pump gain medium forming a pump signal that is configured to bi-directionally propagate along a beam path within the laser pump cavity. The Raman amplifier is positioned in line with the beam path of the pump signal and operable to impart gain on a seed pulse. The seed pulse and the pump signal are co-aligned and linearly polarized.

Abstract: In the light emitting device, each of columnar parts includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is disposed between a substrate and the light emitting layer, a laminated structure has a third semiconductor layer of the first conductivity type disposed between the substrate and the plurality of columnar parts, a first electrode is electrically connected to the first semiconductor layer via the third semiconductor layer, a contact hole is disposed in an insulating layer at a position overlapping the first electrode when viewed from a stacking direction of the first semiconductor layer and the light emitting layer, the first wiring layer is provided to the insulating layer, and the first wiring layer is electrically connected to the first electrode v

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

Abstract: Embodiments herein describe using a birefringent element (e.g., a half-wave plate, full-wave plate, birefringent crystal, or metasurface) or a band-pass filter to reduce the laser line broadening induced by the soliton self-frequency shift. The birefringent element may a free space element that is part of the laser cavity. Due to dispersion, different frequencies (or colors) of light in the laser travel through the birefringent element at different speeds. This dispersion results in the birefringent element introducing slightly different polarization shifts for the different frequencies of light in the laser. When this light passes through a polarizer (which is set to filter out polarizations different from a desired polarization), the polarizer attenuates or extinguishes the frequencies that do not have the polarization of the design frequency of the birefringent element.

Abstract: The invention relates to a laser device comprising a laser source (1), which is configured to emit pulsed laser radiation (2) with a spectrum in the form of a frequency comb having a plurality of equidistant spectral lines, an optical modulator (3), which is configured to shift the frequency of the laser radiation (2), and a control unit (10), which is configured to control the modulator (3) by means of a control signal (6). It is the object of the present invention to demonstrate an improved way, compared to the prior art, of generating an optical frequency comb that is stabilized in terms of the CEO frequency, in which the CE phase is also adjustable. To this end, the invention proposes that the laser radiation (2) emitted by the laser source (1) is stabilized in terms of the carrier-envelope frequency. Furthermore, the invention relates to a method of generating an optical frequency comb.

Abstract: A light-emitting diode (LED) display panel includes a substrate, a driver circuit array on the substrate and including a plurality of pixel driver circuits arranged in an array, an LED array including a plurality of LED dies each being coupled to one of the pixel driver circuits, a micro lens array including a plurality of micro lenses each corresponding to and being arranged over at least one of the LED dies, and an optical spacer formed between the LED array and the micro lens array.

Abstract: A laser device includes: a traveling wave type resonator comprising a first mirror and a second mirror; and a laser medium disposed between the first mirror and the second mirror. The first mirror and the second mirror are disposed such that round-trip light that travels in round trips in the resonator has a focus inside the laser medium. The laser device is configured such that: excitation light incident on the resonator is superimposed on the round-trip light at the focus and narrowed to be thinner than the round-trip light, ZR×?<0.5 is satisfied, where ZR is a Rayleigh length of the excitation light and ? is an absorption coefficient of the laser medium with respect to the excitation light, and a round-trip Gouy phase shift of the resonator has a value excluding 2?×n/m where m is an integer of less than 15 and n is an integer of equal to or less than m.

Abstract: A first conductive pattern (13) is provided on an upper surface of the submount (7). A GND pattern (9) is provided on a lower surface of the submount (7). A lower surface electrode (21) of a capacitor (3) is bonded to the first conductive pattern (13) with solder (22). An upper surface electrode (23) of the capacitor (3) is connected to a light emitting device (2). A terminating resistor (4) is connected to the first conductive pattern (13). The first conductive pattern (13) has a protruding portion (25) which protrudes outside from the capacitor (3) in planar view. A width of the protruding portion (25) is narrower than a width of the capacitor (3).

Abstract: Various designs of semiconductor lasers may comprise a waveguide having a front region that is configured to support a plurality of transverse laser cavity modes and a rear region that support only one transverse laser cavity mode. These front and rear regions may be disposed between front and rear reflectors and may provide optical gain. Some such designs may be useful for providing higher power single mode semiconductor lasers.

Abstract: The present invention relates to a device for generating laser radiation. An object of the present invention is to indicate a laser diode which simultaneously has a high degree of efficiency and a low degree of far field divergence. The diode laser according to the invention comprises a current barrier (5), characterized in that the current barrier (5) extends along a third axis (X), wherein the current barrier (5) has at least one opening, and a first width (W1) of the opening of the current barrier (5) along the third axis (X) is smaller than a second width (W2) of the metal p-contact (8) along the third axis (X).

Abstract: Embodiments are directed to a photonic device that includes a first substrate defining a surface and a trench forming a depression along a portion of the surface, and a second substrate coupled with the surface and extending from the surface to form a raised portion around the trench. The photonic device can also include a laser die positioned within the trench, such that the laser die is surrounded by the second substrate, and an optical material positioned within a region between the laser die and the second substrate. The photonic device can further include a third substrate coupled with the second substrate such that the second substrate is positioned between the first substrate and the third substrate such that the second substrate is configured to at least partially isolate the laser die from mechanical stress exerted on the optical device.

Abstract: A wavelength-tunable laser emission device includes a cavity delimited by a first and a second Sagnac mirror. The cavity has an amplifying medium and a tunable spectral filter using the Vernier effect. The filter includes at least three resonant rings arranged in cascade, each resonant ring integrating a loop mirror with wavelength tunable reflectivity.

Abstract: The present disclosure relates to a laser system/package that is configured to enable the detection of a change in an optical device that is intended to alter light emitted from the laser. The system is designed to measure an electric or magnetic field that is affected by the optical device. As a result, changes in the optical device, for example because the optical device has been damaged or dislodged or removed, should be detected by a corresponding change in the electric or magnetic field.

Abstract: An electronic device is provided. The electronic device includes a substrate, a semiconductor unit, a wall, and a light-transmitting member. The semiconductor unit is mounted on the substrate. The wall is disposed on the substrate and surrounds the semiconductor unit. The wall includes two exterior wall components and two interior wall components. The two exterior wall components are spaced apart from each other, so that two gaps are formed between the two exterior wall components. The two gaps are in spatial communication with an installation area that is surrounded by the two exterior wall components. The two interior wall components are arranged in the installation area and spaced apart from each other. The two interior wall components correspond in position to the two gaps and respectively shade parts of the two gaps. The light-transmitting member is disposed on the wall and covered on the semiconductor unit.