Abstract: A reflector includes a low refractive index layer and a high refractive index layer. The low refractive index layer has a first average refractive index and has a laminated structure in which an AlN layer and a GaN layer are alternately laminated. The high refractive index layer has a second average refractive index higher than the first average refractive index and includes an InGaN layer.

Abstract: A micro light emitting diode display includes a display module and a hydrophobic layer. The display module includes a substrate, an electrode layer, and a micro light emitting diode device. The substrate has a first surface, a second surface opposite to the first surface and at least one air passage extending from the first surface to the second surface. The electrode layer is disposed on and in contact with the first surface of the substrate. The air passage has an opening on the first surface of the substrate, and the electrode layer is spaced apart from the opening. The micro light emitting diode device is disposed on the electrode layer and has a light emitting area that is less than or equal to 2500 ?m2. The hydrophobic layer at least partially covers a side of the display module.

Abstract: The present invention provides one or more injection-lockable whistle-geometry semiconductor ring lasers, which may be cascaded, that are integrated on a common silicon-on-insulator (SOI) substrate with a single-frequency semiconductor master laser, wherein the light output from the semiconductor master laser is used to injection-lock the first of the semiconductor ring lasers. The ring lasers can be operated in strongly injection-locked mode, while at least one of them is subjected to direct injection current modulation.

Abstract: A pulse stretching fiber oscillator (or laser cavity) may comprise a chirped fiber Bragg grating (CFBG) and an optical circulator arranged such that a first portion of a beam that is transmitted through the CFBG continues to propagate through the laser cavity while a second portion of the beam that is reflected from the CFBG is stretched and chirped by the CFBG and directed out of the laser cavity by the optical circulator. Accordingly, a configuration of the CFBG and the optical circulator in the laser cavity may enable pulse stretching contemporaneous with outcoupling, which may prevent deleterious nonlinear phase from accumulating prior to stretching.

Abstract: A method of forming a flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package comprising: forming a VCSEL pillar array; applying a dielectric layer to the VCSEL pillar array, the dielectric layer filling trenches in between pillars forming the VCSEL pillar array and covering the pillars; planarizing the VCSEL pillar array to remove the dielectric layer covering the pillars exposing a metal layer on a top surface of the pillars; applying a metal coating on the metal layer on a top surface of the pillars, the metal layer defining a contact pattern of the VCSEL pillar array; and applying solder on the metal coating to flip chip mount the VCSEL pillar array to a substrate package.

Abstract: Included are: a laser light source which emits a plurality of laser beams; an aspherical lens which the plurality of laser beams emitted from the laser light source enters and which converts the plurality of laser beams into convergent beams; and a phosphor which is irradiated with the convergent beams from the aspherical lens as excitation beams to generate fluorescence, wherein the plurality of laser beams have different spread angles in a horizontal direction and a vertical direction and enter the aspherical lens while arranged in a direction in which the spread angle is smaller, from among the horizontal direction and the vertical direction, and the aspherical lens has a function of equalizing a light intensity in a direction in which the spread angle is larger, from among the horizontal direction and the vertical direction.

Abstract: A line beam irradiation apparatus (1000) includes a work stage (200), a line beam source (100) for irradiating a work (300) placed on the work stage (200) with a line beam; and a transporting device (250) for moving at least one of the work stage (200) and the line beam source (100) such that an irradiation position of the line beam on the work moves in a direction transverse to the line beam. The line beam source includes a plurality of semiconductor laser devices and a support for supporting the plurality of semiconductor laser devices. The plurality of semiconductor laser devices are arranged along a same line extending in a fast axis direction, and the laser light emitted from emission regions of respective ones of the semiconductor laser devices diverge parallel to the same line to form the line beam.

Abstract: An AlGaInPAs-based semiconductor laser device includes a substrate, an n-type clad layer, an n-type guide layer, an active layer, a p-type guide layer composed of AlGaInP containing Mg as a dopant, a p-type clad layer composed of AlInP containing Mg as a dopant, and a p-type cap layer composed of GaAs. Further, the semiconductor laser device has, between the p-type guide layer and the p-type clad layer, a Mg-atomic concentration peak which suppresses inflow of electrons, moving from the n-type clad layer to the active layer, into the p-type guide layer or the p-type clad layer.

Abstract: A first current generator circuit generates a first current having a current value variable in accordance with a first control signal. A second current generator circuit generates a second current by limiting the first current so as to have a current value variable in accordance with a second control signal. A third current generator circuit generates a third current by limiting the second current so as to have a current value variable in accordance with a third control signal, and supplies the third current to the semiconductor laser element. Rates at which the first and second control signals change are set to be lower than a rate at which the third control signal changes.

Abstract: A laser system includes: A. a solid-state laser apparatus configured to output a pulse laser beam having light intensity distribution in a Gaussian shape that is rotationally symmetric about an optical path axis; B. an amplifier including a pair of discharge electrodes and configured to amplify the pulse laser beam in a discharge space between the pair of discharge electrodes; and C. a conversion optical system configured to convert the light intensity distribution of the pulse laser beam output from the amplifier into a top hat shape in each of a discharge direction of the pair of discharge electrodes and a direction orthogonal to the discharge direction.

Abstract: A method of an optical member comprises: providing a light transmissive member or a heat dissipating member in which a metal film and an optical film having a larger thickness than a thickness of the metal film are formed in separate regions of an upper face of a main body of the light transmissive member or an upper face of a main body of the heat dissipating member, providing a wavelength conversion member in which a metal film is formed on a lower face of a main body of the wavelength conversion member, and bonding the metal film of the light transmissive member or the metal film of the heat dissipating member to the metal film of the wavelength conversion member via a metal adhesive while positioning the optical film directly under a wavelength conversion part of the wavelength conversion member.

Abstract: Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.

Abstract: In various embodiments, laser apparatuses include thermal bonding layers between various components and creep-mitigation systems for preventing or retarding movement of thermal bonding material out of the thermal bonding layers.

Abstract: Method and systems are disclosed for generating amplified output laser pulses with individually predefined pulse energies at individually predefined times at an output by providing a pulse sequence of input laser pulses having the same pulse energy and the same temporal pulse interval smaller than the temporal pulse interval between two adjacent output laser pulses, selecting the input laser pulses that arrive at the output at or about the predefined times, amplifying the selected input laser pulses with an optical amplifier, wherein at least one sacrificial laser pulse is inserted into the pulse sequence of the selected input laser pulses before the subsequent one of the two successive input laser pulses to be amplified, and reducing the pulse energies of the amplified input laser pulses to predefined pulse energies by time-controlled partial decoupling depending on their pulse intervals from the corresponding immediately preceding amplified input or sacrificial laser pulse.

Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.

Abstract: A light-emitting device includes: a substrate; a laminated structure provided at the substrate and having a plurality of columnar parts; and an electrode provided on a side opposite to a side of the substrate, of the laminated structure. The columnar part has: a first semiconductor layer; a second semiconductor layer having a different electrical conductivity type from the first semiconductor layer; and an active layer provided between the first semiconductor layer and the second semiconductor layer.

Abstract: An InP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light, being composed of six regions: a left DFB semiconductor laser, a bidirectional SOA, a left passive optical waveguide region, a doped passive optical waveguide region, a right passive optical waveguide region, and a right DFB semiconductor laser, specifically including: an N+ electrode layer, an N-type substrate, an InGaAsP lower confinement layer, an undoped InGaAsP multiple quantum well active region layer, doped particles, distributed feedback Bragg gratings, an InGaAsP upper confinement layer, a P-type heavily doped InP cover layer, a P-type heavily doped InGaAs contact layer, a P+ electrode layer, a light-emitting region, and isolation grooves. It effectively solves problems of bulky volume of the existing chaotic laser source, the time-delay signature of chaotic laser, narrow bandwidth, and low coupling efficiency of the light and the optical waveguide.

Abstract: A light emitter device (100) comprises a substrate (10) and a photonic crystal (20), which is arranged on the substrate (10) and comprises pillar- and/or wall-shaped semiconductor elements (21), which are arranged periodically standing out from the substrate (10), wherein the photonic crystal (20) forms a resonator, in which the semiconductor elements (21) are arranged in a first resonator section (22) with a first period (d1), in a second resonator section (23) with a second period (d2) and in a third resonator section (24) with a third period (d3), wherein on the substrate (10) the second resonator section (23) and the third resonator section (24) are arranged on two mutually opposing sides of the first resonator section (22) and the second period (d2) and the third period (d3) differ from the first period (d1), the first resonator section (22) forms a light-emitting medium and the third resonator section (24) forms a coupling-out region, through which a part of the light field in the first resonator sectio

Abstract: A fiber laser producing a beam of ultrashort laser pulses at a repetition rate greater than 200 MHz includes a linear fiber resonator and a fiber branch. Ultrashort laser pulses are generated by passive mode-locking and circulate within the linear fiber resonator. Each circulating laser pulse is split into a portion that continues propagating in the linear fiber resonator and a complementary portion that propagates through the fiber branch and is then returned to the linear fiber resonator. The optical length of the linear fiber resonator is an integer multiple of the optical length of the fiber branch. The repetition rate of the ultrashort laser pulses is the reciprocal of the propagation time of the laser pulses through the fiber branch.

Abstract: An optical device including a Vertical-Cavity Surface-Emitting Laser (VCSEL) light source and a lens array is provided. The VCSEL light source is configured to emit light with at least one light dot. The lens array is configured to receive light emitting from the VCSEL light source and then project a structured light. The structured light includes a dot pattern having number of light dots. Plural convex lenses are arranged along a first surface of the lens array. The convex lenses are configured to generate the light dots of the dot pattern.