Patents Examined by K Fernandez
  • Patent number: 6677597
    Abstract: The invention relates to an apparatus and a method for the feedback control of a grid scanner in ion therapy. An apparatus of that kind for the feedback control of a grid scanner has scanner magnet current supply devices for ion beam scanner magnets that deflect horizontally and vertically with respect to the middle of the ion beam, the supply devices being controlled by control and read-out modules for the scanner magnets. Furthermore, the apparatus has a location-sensitive detector for location measurement, which is controlled by means of a control and read-out module. A sequence control device controls the activation and read-out sequence among the devices of the apparatus, the apparatus also having in the sequence control device a circuit arrangement having a feedback loop between the control and read-out modules for the scanner magnets and the control and read-out module of the location-sensitive detector.
    Type: Grant
    Filed: March 2, 2001
    Date of Patent: January 13, 2004
    Assignee: Gesellschaft fuer Schwerionenforschung mbH
    Inventors: Thomas Haberer, Wolfgang Ott
  • Patent number: 6671045
    Abstract: An apparatus and method for measuring optical signal-to-noise ratio in optical communications includes (1) a variable optical band-pass filter (VOBPF) that passes the amplified output beam when the beam wavelength is the same as the passing wavelength of the VOBPF; (2) a 1×4 beam distributor for distributing the passing beam of the VOBPF into four streams; (3) a measuring device for measuring Stokes parameters S0, S1, S2, S3 from the four distributed beams; (4) a calculating device for calculating the optical signal power by finding the power of the polarized component of the amplified output beam from the Stokes parameters S1, S2, and S3; (5) a calculating device for calculating the noise power by finding the power of the noise included in the amplified output beam from Stokes parameter S0 and the optical signal power; and (6) a dividing device for calculating the ratio Power ⁢   ⁢ of ⁢   ⁢ O
    Type: Grant
    Filed: October 5, 2000
    Date of Patent: December 30, 2003
    Assignee: Korea Advanced Institute of Science & Technology
    Inventors: Chang Hee Lee, Sang Yung Shin, Kwang Uk Chu
  • Patent number: 6657192
    Abstract: In a method for determining the degree of charge-up induced by plasma used for manufacturing a semiconductor device and an apparatus therefor, a predetermined region on a surface of a wafer on which a plasma process has been performed is repeatedly scanned with a primary electron beam. Secondary electrons generated by a reaction between the primary electron beam and the surface of the wafer that are emitted to the outside of the surface of the wafer are collected. The degree of charge-up induced at the surface of the wafer by the plasma used during the plasma process is determined from the change in the amount of collected secondary electrons. Determination as to whether a contact hole is opened or as to the degree of degradation of a gate insulating layer is made based on the degree of charge-up.
    Type: Grant
    Filed: August 17, 2000
    Date of Patent: December 2, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ji-soo Kim, Wan-jae Park, Kyoung-sub Shin
  • Patent number: 6657191
    Abstract: A means and method are disclosed for multiplexing a plurality of samples from multiple sprayer devices to be efficiently transferred to a mass analyzer for subsequent analysis. Sample sprays are formed from a plurality of sprayers, which are desolvated to form the sample ions. The sample ions are then selected from one of the sprayers for transportation into a mass analyzer. To accomplish this, the apparatus of the invention comprises a multi-part capillary wherein a first section thereof is connected to a motor which is able to move this first section from one sprayer to the next. This first section may be a flexible tube-like structure loosely mounted in an aperture of a cone-shaped end of a motor which rotates such that the sampling orifice may be aligned with different sprayers at different times to sequentially and repetitively sample ions produced by each of the plurality of sprayers.
    Type: Grant
    Filed: March 2, 2001
    Date of Patent: December 2, 2003
    Assignee: Bruker Daltonics Inc.
    Inventor: Melvin A. Park
  • Patent number: 6642513
    Abstract: Sample traps or wipes are provided for a detection system for detecting contraband materials. The sample trap is formed from an open weave glass fabric coated with a thin layer of Teflon and roughened to cut through the surface of Teflon and to break some of the glass fibers. Alternatively, the sample trap is non-woven felt fabric made of high temperature polyamide fiber. The sample traps are used in a detector, such as an ion trap mobility spectrometer. The detector includes a desorber which feeds dry air from a manifold above and below the sample trap through a series of holes along the mouth of the desorber. The dry air passes through the trap and purges out unwanted atmospheric constituents that could otherwise affect the performance of the detector. The purged air passes to the outside atmosphere, thus creating a dry curtain at the entry to the desorber.
    Type: Grant
    Filed: October 1, 1999
    Date of Patent: November 4, 2003
    Assignee: General Electric Company
    Inventors: Anthony Jenkins, William J. McGann, Joseph Napoli, Kevin Perry
  • Patent number: 6617596
    Abstract: An accelerator (10) generates an electron beam (22) of selected energy that is swept (16) up and down. A conveyor (32) moves items (30) through the electron beam for irradiation treatment. An array (40a) of inductive electron beam strength detectors is disposed on a down stream side of the item to detect the energy of the electron beam exiting the item at the plurality of altitudes. The electron beam strength entering and leaving the item are communicated to a processor (54) which determines the absorbed dose of radiation absorbed by the item. The dose information is archived (56) or compared by a parameter adjustment processor (58) with target doses and deviations are used to control one or more of MeV or beam current of the electron beam, the sweep rate, and the conveying speed of the items. Each of the detectors includes a vacuum chamber in which two current transformers (60, 62) disposed on either side of a metal foil layer (64).
    Type: Grant
    Filed: November 17, 2000
    Date of Patent: September 9, 2003
    Assignee: Steris Inc.
    Inventor: Sergey Alexandrovich Korenev
  • Patent number: 6583407
    Abstract: The present invention relates to a method for selectively delivering ions to a mass analyzer operating in a vacuum region. The method involves providing a dielectric conduit having an axial bore originating in an inlet opening that communicates with an ion source and terminating in an exit opening disposed within the vacuum region. A gas stream comprising an ion having a polarity and traveling at a drift velocity is flowed through the bore from the inlet opening toward the exit opening. A motion component is altered in a manner that does not substantially depend on the polarity of the ion to effect a change in the drift velocity of the ion. The invention also provides an apparatus to carry out the method.
    Type: Grant
    Filed: August 23, 2000
    Date of Patent: June 24, 2003
    Assignee: Agilent Technologies, Inc.
    Inventors: Steven M. Fischer, Charles W. Russ, IV
  • Patent number: 6580067
    Abstract: The present invention is to provide a monitoring device making it possible to measure the concentration of a target trace gas which has an ionization efficiency changed by the affect of impurities and which is absorbed on a pretreatment portion or piping, at a high accuracy and at real time, by adding an internal standard having a known concentration to the target trace gas. The concentration of the target trace gas is measured while an internal standard having substantially the same properties (such as ionization efficiency change and vapor pressure) as the target trace gas is added. The ion strengths of the target trace gas and the internal standard are compared to calibrate the concentration of the target trace gas. According to the present invention, the concentration of the target trace gas in gas containing impurities can be online measured at a real time and at high accuracy while being continuously calibrated.
    Type: Grant
    Filed: November 15, 2000
    Date of Patent: June 17, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Masuyoshi Yamada, Yuichiro Hashimoto, Minoru Sakairi, Yasuaki Takada, Masami Sakamoto, Tomoyuki Tobita
  • Patent number: 6576893
    Abstract: A quadrupole ion trapping device has a ring electrode (11) and two end-cap electrodes (12, 13). Ions are introduced into a trapping region (15) of the ion trapping device via a hole (14) in a first of the end-cap electrodes (12) and are retarded by application of a DC retarding voltage to the second of the end-cap electrodes (13). The retarding voltage is removed when the retarted ions are about to change their direction of motion towards the first end-cap electrode (12), and an ion trapping field is established by applying a radio frequency voltage to the ring electrode (11) when the ions are inside the ion trapping device.
    Type: Grant
    Filed: August 8, 2000
    Date of Patent: June 10, 2003
    Assignee: Shimadzu Research Laboratory, (Europe), Ltd.
    Inventors: Eizo Kawato, Alan Joseph Smith
  • Patent number: 6573519
    Abstract: This adjusting method can determine the precise deflection amount of mask deflectors corresponding to each aperture pattern by precisely measuring the position of the beam deflected by the mask deflectors in relation to that of each aperture pattern in an electron beam exposure apparatus, comprising an electron gun, a block mask, plural mask deflectors that deflect the electron beam so as to pass through one of the plural aperture patterns selectively, convergent devices that converge the electron beam onto a specimen, and deflectors that deflect the electron beam on the specimen.
    Type: Grant
    Filed: August 30, 2000
    Date of Patent: June 3, 2003
    Assignee: Advantest Corporation
    Inventor: Akio Takemoto
  • Patent number: 6559456
    Abstract: A calibration pattern is drawn on a substrate using a charged particle beam. The substrate is developed, and the position of the developed calibration pattern is detected to check the relationship between the position of the stage and the reference position of the charged particle beam. On the basis of the check result, the reference position of the charged particle beam is corrected, and a pattern is drawn on the substrate on which the pattern is to be drawn.
    Type: Grant
    Filed: October 20, 1999
    Date of Patent: May 6, 2003
    Assignee: Canon Kabushiki Kaisha
    Inventor: Masato Muraki
  • Patent number: 6555830
    Abstract: The microcolumn configuration of the present invention provides for emission noise reduction through the use of a screened beam-limiting aperture for monitoring the electron beam current. This novel approach utilizes a screening aperture located between the emitter and the beam-limiting aperture, which screening aperture collects most of the current transmitted by the first lens of the electron beam column. In order to achieve good noise suppression, the screening aperture should let through only the portion of the beam where the electrons are correlated. The current collected by the beam-limiting aperture is then used as a reference signal in the image processing. The elimination of this noise increases the detection sensitivity of an inspection tool. This reduces the total number of required pixels and therefore increases the throughput of the tool.
    Type: Grant
    Filed: August 15, 2000
    Date of Patent: April 29, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Marian Mankos, Tai-Hon Philip Chang, Kim Y. Lee, Ming Yu
  • Patent number: 6555834
    Abstract: In a lithographic apparatus using exposure radiation of a relatively short wavelength, e.g. 157 or 126 nm, a laminar flow of N2 is provided across parts of the beam path in or adjacent to moving components of the apparatus. The laminar flow is faster than the maximum speed of the moving components and the diffusion rate of air thereby minimizing the contamination of the N2 by mixing with air. Laminar flow may be ensured by providing partitions to divide the beam path into separate spaces, by covering rough or non-planar surfaces in components on or adjacent to the laminar flow and by providing aerodynamic members.
    Type: Grant
    Filed: November 3, 2000
    Date of Patent: April 29, 2003
    Assignee: ASML Netherlands B.V.
    Inventor: Erik R. Loopstra
  • Patent number: 6528798
    Abstract: A process for manufacturing an electrostatic element for steering a charged particle beam. A cylindrical, non-conductive body having a bore therethrough is assembled with a cylindrical, conductive core also having a bore therethrough and sized to fit within the bore of the body. The core is secured within the bore of the body, and then longitudinally extending slots are cut completely through the core to create pole pieces that are electrically isolated from each other.
    Type: Grant
    Filed: November 21, 2000
    Date of Patent: March 4, 2003
    Assignee: Schlumberger Technologies Inc.
    Inventor: Michael R. Busky
  • Patent number: 6521887
    Abstract: An ungated, time-of-flight ion mass spectrograph utilizing a continuous ion beam that is rastered (swept) by electrostatic deflection plates at the entrance of a time-of-flight drift tube is described. After an ion is deflected, it follows a trajectory in the drift tube that depends on the phase of the raster and is detected by a position-sensitive detector. The detected position provides information concerning the time when the ion entered the drift tube. This information, when combined with knowledge of the raster voltage at the time that the ion was detected, provides a method for determining the time-of-flight of the ion in the drift tube. Using the time-of-flight and the distance traveled in the drift tube, which is also determined by the detected position of the ion, ion speed is determined. Ion mass-per-charge ratio can then be determined for a monoenergetic ion beam.
    Type: Grant
    Filed: May 12, 1999
    Date of Patent: February 18, 2003
    Assignee: The Regents of the University of California
    Inventors: Herbert O. Funsten, David J. McComas
  • Patent number: 6521897
    Abstract: A collimating grid for an ion source located after the exit grid. The collimating grid collimates the ion beamlets and disallows beam spread and limits the beam divergence during transients and steady state operation. The additional exit or collimating grid prevents beam divergence during turn-on and turn-off and prevents ions from hitting the periphery of the target where there is re-deposited material or from missing the target and hitting the wall of the vessel where there is deposited material, thereby preventing defects from being deposited on a substrate to be coated. Thus, the addition of a collimating grid to an ion source ensures that the ion beam will hit and be confined to a specific target area.
    Type: Grant
    Filed: November 17, 2000
    Date of Patent: February 18, 2003
    Assignee: The Regents of the University of California
    Inventors: Walter B. Lindquist, Patrick A. Kearney
  • Patent number: 6472662
    Abstract: To obtain data pertaining to the surface characteristics of a sample, a control method adjusts a tilted rastered E-beam to in SEM to a first/next tilt condition and navigates the SEM-beam to a sample site. The system performs a fine alignment step. Then the system scans a region of a sample to acquire a waveform. The system analyzes the waveform to determine the DESL value for each edge of interest. The system tests whether there is sufficient information available for each structural edge. If NO, the system repeats the above steps starting by changing the value of the tilt angle to acquire another waveform. If YES, the system determines the height and sidewall angles for each structural edge. Then the system reports the sidewall angle and the structure height for each edge of the structure under test. The system then corrects the critical dimension measurement determined from 0 degrees tilt scanning.
    Type: Grant
    Filed: August 30, 2000
    Date of Patent: October 29, 2002
    Assignee: International Business Machines Corporation
    Inventor: Charles Neill Archie
  • Patent number: 6459081
    Abstract: A solution containing nonvolatile salts is pumped from a pump to an electrospray nebulization probe in the LC/MS interface, and spouted out from a tip of the probe into an atmospheric pressure environment in a form of fine liquid droplets having charges. The sample ions contained in the droplets are deflected by a deflector and enter into a mass analysis portion through an ion sampling aperture to be mass analyzed. On the other hand, the nonvolatile salts travel straight without being affected by the deflector, and collide against and are collected on a wall of a particle collector. The collected salts are precipitated in a form of crystals. The collected salts are washed away by spraying a particle washing solution from the washing nozzle. The above-described structure can provide an atmospheric pressure ionization mass spectrometer which can prevent effects of nonvolatile salts on the mass analysis without deteriorating the vacuum condition of the mass analysis portion by the preventing action.
    Type: Grant
    Filed: August 20, 2001
    Date of Patent: October 1, 2002
    Assignee: Hitachi, Ltd.
    Inventor: Yoshiaki Kato
  • Patent number: 6444981
    Abstract: A scanning electron microscope using the retarding method and the boosting method includes a sample holder for holding a sample on the sample holder; a shield electrode arranged between an object lens and the sample, in which an aperture for passing said primary electron beam is formed; a negative-voltage applying circuit for applying a negative voltage to the sample holder and the shield electrode; an acceleration tube located in an electron-beam passing hole in the object lens, provided to pass a primary electron beam, for further accelerating the primary electron beam; and a control electrode located between the acceleration tube and the sample, in which an aperture whose size is smaller than the aperture formed in said shield electrode is provided to pass the primary electron beam, a positive voltage in the positive direction to the negative voltage being applied to the control electrode, superimposed on the negative voltage.
    Type: Grant
    Filed: October 26, 1999
    Date of Patent: September 3, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Hideo Todokoro, Sho Takami, Makoto Ezumi
  • Patent number: 6437329
    Abstract: A system for analyzing a film and detecting a defect associated therewith includes a scanning probe microscope having a nanotube tip with a material associated therewith which exhibits a characteristic that varies with respect to a film composition at a location corresponding to the nanotube tip. The system also includes a detection system for detecting the material characteristic and a controller operatively coupled to the detection system and the scanning probe microscope. The controller configured to receive information associated with the detected characteristic and use the information to determine whether the film contains a defect at the location corresponding to the nanotube tip. The invention also includes a method of detecting a film composition at a particular location of a film or substrate. The method includes associating a material exhibiting a characteristic which varies with respect to a film composition with a nanotube tip of a scanning probe microscope and detecting the characteristic.
    Type: Grant
    Filed: October 27, 1999
    Date of Patent: August 20, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Sanjay K. Yedur, Bhanwar Singh, Bryan K. Choo