Abstract: An apparatus for projection lithography is disclosed. The apparatus has at least one magnetic doublet lens. An aperture scatter filter is interposed between the two lenses of the magnetic doublet lens. The aperture scatter filter is in the back focal plane of the magnetic doublet lens system, or in an equivalent conjugate plane thereof. The apparatus also has two magnetic clamps interposed between the two lenses in the magnetic doublet lens. The clamps are positioned and configured to prevent substantial overlap of the magnetic lens fields. The magnetic clamps are positioned so that the magnetic fields from the lenses in the magnetic doublet lens do not extend to the aperture scatter filter.

Abstract: A lithographic projection apparatus has a radiation system for supplying a projection beam of radiation, a mask table provided with a mask holder for holding a mask, a substrate table provided with a substrate holder for holding a substrate, a projection system for imaging an irradiated portion of the mask onto a target portion of the substrate, first driving means, for moving the mask table in a given reference direction substantially parallel to the plane of the table, second driving means, for moving the substrate table parallel to the reference direction so as to be synchronous with the motion of the mask table.

Abstract: A novel technique utilizing the precision of printed circuit board design and the physical versatility of thin, flexible substrates is disclosed to produce a new type of ion reflector. A precisely defined series of thin conductive strips (traces) are etched onto a flat, flexible circuit board substrate. Preferably, the thin conductive strips are further apart at one end of the substrate and get increasingly closer towards the other end of the substrate. The flexible substrate is then rolled into a tube to form the reflector body, with the conductive strips forming the rings of the ion reflector. The spacing between the traces, and hence the ring spacing, can be readily varied by adjusting the conductor pattern on the substrate sheet during the etching process. By adjusting the spacing between the rings, the characteristics of the field created by the reflectron can be easily customized to the needs of the user.

Abstract: An ion source assembly 10 is disclosed, the assembly comprising a source sub assembly having an ion source 20, an extraction electrode 40 and an electrically insulating high voltage bushing 60 to support the extraction electrode 40 relative to the ion source 20. The ion source assembly further includes a chamber 70 having an exit aperture to allow egress of ions to an ion implanter. The chamber 70 encloses one or more further electrodes 80,90. The source sub assembly is mounted to the chamber 70 via a hinge 150. This allows ready access to the inner walls of the chamber 70, which in turn allows easier maintenance and cleaning of the further electrodes 80,90 as well as the inner walls of the chamber 70. Preferably, a liner 160 is employed on the inner walls of the chamber 70.

Abstract: In a particle-optical imaging lithography system, an illuminating system comprising a particle source and a first electrostatic lens arrangement produces a particle beam which penetrates a mask foil provided with an orifice structure positioned in the particle beam path. This structure is imaged on a substrate plane by a projection system comprising a second electrostatic lens arrangement. The first and second lens arrangements each comprise, on their respective sides facing the mask holding device, at least one pre- and post-mask electrode, respectively. By applying different electrostatic potentials to the pre- and post-mask electrodes and to the mask foil, the mask foil and the pre-mask electrode form a grid lens with negative refracting power, and the mask foil and the post-mask electrode also form a grid lens with negative refracting power.

Abstract: There is disclosed an OMEGA energy filter comprising three magnetic field regions and producing small aberrations. The electron beam trajectory from the entrance window plane to the slit plane is continuously deflected into an omega-shaped form. Three magnetic field regions M1, M23, and M4 having deflection angles &PHgr;, 2&PHgr;, and &PHgr;, respectively, are arranged in turn from the incident side. The deflection angle &PHgr; is set such that 102°_. . . &PHgr;_. . . 115°. The radius of curvature R3 of the beam in the magnetic field region having the deflection angle 2&PHgr; is set less than the radius of curvature R4 of the beam in the magnetic field regions having the deflection angle &PHgr;.

Abstract: An electron beam blanking method and system for selectively interrupting the flow of electrons during an electron beam lithographic process minimizes electron beam movement during blanking as the electron beam reaches a target lithographic mask. A first deflection plate pair deflects electrons flowing in the electron beam in the direction of the target lithographic mask. The first deflection plate pair includes a first tapered gap that is formed so that electrons which enter the first tapered gap before the initialization of a blanking voltage experience progressively greater electric field as they pass through the plates for controlling the cumulative deflection as the electrons travel through the first deflection plate pair.