Abstract: A plasma CVD (chemical vapor deposition) apparatus of the capacitance coupling type for effecting the chemical vapor deposition on a drum which includes an air tight chamber made of an electrically conductive material, a support provided in the chamber for supporting the drum inside the chamber in an electrically insulated relationship with the chamber, and an RF power source for supplying RF power to the drum. The chamber is grounded and, therefore, the plasma is generated between the drum and inside wall of the chamber. The apparatus is provided with means for providing a smooth surface on the drum. The drum can be used as a photoreceptor for use in an electrophotographic copying machine.

Abstract: Substrates are disposed in a reaction chamber having a gas inlet and a gas outlet and a mixture gas containing at least a semiconductor material gas and a carrier gas is introduced into the reaction chamber in such a state in which a gas in the reaction chamber is exhausted therefrom. An electromagnetic field is applied to the mixture gas to ionize it into a mixture gas plasma in the reaction chamber, by which a semiconductor material is deposited on each substrate. In this case, the semiconductor material thus deposited on each substrate becomes a non-crystalline semiconductor by holding the atmospheric pressure in the reaction chamber below 1 atm and maintaining the substrate at a temperature lower than a temperature at which the semiconductor material on the substrate becomes crystallized.The reaction chamber is provided with a gas ionizing region on the side of the gas inlet and a semiconductor depositing region on the side of the gas outlet.

Abstract: The disclosure is of a method to improve the antithrombogenicity which results when heparin is attached to a polymeric surface. The polymeric surface is activated by treatment with a plasma. The surface thus activated is rendered receptive to the binding of a surface active agent. The surface active agent in turn reacts with heparin to provide a polymeric surface of exceptional antithrombogenicity when contacted with blood for an extended period of time.

Abstract: An erase gate is formed for erasing data from a floating gate in a semiconductor memory device having the floating gate and a control gate.Furthermore, in order to achieve electrical insulation between the erase gate and the control gate, an insulating film formed between the erase gate and the control gate is made thicker than an insulating film formed between the floating gate and the erase gate.

Abstract: A magnetic recording medium having a thin magnetic recording metal film formed on one surface of a non-magnetic base is disclosed. A thin cured epoxy resin film comprising an epoxy resin having an epoxy equivalent of from 400 to 3,000 and a curing agent made of an aliphatic amine having two or more amino groups and three or more amino active hydrogen atoms in the molecular chain is formed on either the thin magnetic metal film or the surface of the non-magnetic base opposite the thin magnetic metal film or both. A process for producing such magnetic recording medium is also disclosed.

Abstract: A process for fabricating self-aligned regions of metal silicide on bipolar integrated circuits having self-aligned polycrystalline silicon emitters and base contacts includes the steps of depositing a layer of polycrystalline silicon across the surface of the structure, patterning the polycrystalline silicon to define the emitters and base contacts as well as resistors and diodes, heating the structure to transfer desired conductivity dopants from the polycrystalline silicon into the underlying structure, forming a protective layer over those regions of the structure where metal silicide is not desired, depositing a layer of refractory metal across the entire structure, and reacting the refractory metal with the underlying silicon to form metal silicide.

Abstract: Evaporation cell for a liquid compound suitable for molecular jet epitaxy on a substrate from a compound which is liquid at ambient temperature and which comprises in per se known manner a cell containing said liquid compound in a main ultravacuum enclosure, the cell being provided with heating means. It comprises a preliminary vacuum enclosure tightly connected to the main enclosure and having a first opening provided with a valve and a pipe for forming and regulating the preliminary vacuum in the preliminary vacuum enclosure, an upwardly oriented second opening linked with a chamber containing a large free surface area reservoir for receiving a liquid compound stock, as well as a third downwardly oriented opening linked with a disassemblable reservoir for emptying the liquid compound, while in the preliminary vacuum enclosure is provided a three-way cock connecting the cell containing the liquid compound either to the large surface reservoir, or to the disassemblable reservoir.

Abstract: An electrochromic device comprises an oxidative-coloration layer between a pair of electrodes, said oxidative-coloration layer being composed of a film of a metal oxyhydroxide represented by the formula:MOx(OH)ywherein M is a metal of group VIII of the periodic table, x is a number satisfying 0<x<1, and y is a number satisfying 1<y<2.

Abstract: A method is disclosed for the fabrication of an air supported crossover bridge which consists of a polyimide coating being set over the metalized device. Then, supports are defined for the crossover and the crossover is added. Once the crossover has been added the excess is removed and the polyimide layer is removed leaving the air supported bridge.

Abstract: Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier.

Abstract: Optical devices which reduce the risk of damage by high energy laser pulses re made by applying particles to the surface of optical components. The particles serve as plasma initiation sites. The particles are made of material capable of producing large numbers of free electrons when illuminated above a preselected power level. Above the preselected power level, transmittance or reflectance of the optical component is limited by the plasma created by the free electrons.

Abstract: New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopants, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant source comprises a dopant containing porous, inert, rigid dimensionally stable and thermal shock resistant reaction sintered Si.sub.3 N.sub.4 carrier material.

Abstract: A process for forming an overcoated electrophotographic imaging member comprising applying on an electrophotographic imaging member a coating in liquid form comprising a cross-linkable siloxanol-colloidal silica hybrid material having at least one silicon bonded hydroxyl group per every three --SiO-- units on the electrophotographic imaging member and a hydrolyzed ammonium salt of an alkoxy silane having the formula ##STR1## wherein R.sub.1, R.sub.2, and R.sub.3 are independently selected from the group consisting of aliphatic and substituted aliphatic radicals having 1 to 4 carbon atoms, R.sub.4 is selected from the group consisting of aliphatic radicals, substituted aliphatic radicals and the group ##STR2## wherein y is a number from 2 to 4, and R.sub.

Abstract: A door panel having an insulating foam core and a pair of rigid inner and outer skins preferably formed of steel or other metal. The skins have side flanges with hook portions that mechanically interlock. The interlocking flanges provide a method of mechanically attaching the inner and outer skins of the panel to each other by utilizing the compression and spring back of the core during assembly. A resilient thermal barrier element is interposed between the interlocking flanges to prevent them from making direct contact with each other while at the same time sealing the joint, the thermal barrier element also including a cushioning bead engagable with a similar bead of another door panel to provide a weather seal therebetween. The method of making the panel is also disclosed.

Abstract: A device for applying a treatment medium, especially in foam form, to a running web of material, especially a rug web, with an application beam extending transversely to the web of material, the application beam having a longitudinal slot, through which the treatment medium emerges onto the web of material. On the side opposite the slot an elastic cushion which presses the web of material against the sliding surface of the application beam is arranged on the back of the web of material. The cushion may be an inflatable elastic hollow body or a foam material cushion.

Abstract: The formwork element of brick size is intended to form horizontal wall projections on which e.g. an outer clinker masonry can be bricked up. The formwork element comprises an inner wall (10), an outer wall (12) connected therewith via stems (42,44,45) and an outwardly projecting formwork part (14). The cavity of the latter, via one or several breaks (24,26) provided in the outer wall (12), is in communication with the interspace between the latter and the inner wall (10). In order to adjust the load-bearing part of the inner wall (10) to the part (28,30,32) of reduced load-bearing capacity of outer wall (12) and to avoid a sloping position of the wall, inner wall (10) at least on the upper side in the area (60,62) opposite break (24,26) of the outer wall (12) is depressed, with the close tongue-grooving engagement (16,20) being maintained. The protruding form-locking part (14), on the bottom side, is formed in a manner rising in oblique upward direction.

Abstract: The electrical conductivity of solid, impregnable materials, such as cellulose-based insulating materials, can be increased by supplying to the solid impregnable material a substance with the ability, during polymerization of a pyrrole compound comprising at least one of the substances pyrrole and N-methylpyrrole, to give a polymer with higher electrical conductivity than the solid impregnable material, as well as a pyrrole compound of the kind stated, whereafter the pyrrole compound is transformed into a polymer in the solid, impregnable material.

Abstract: A production control process includes a method of highlighting pinholes in a surface layer (37), such as a photoresist layer, of an article (31), such as a semiconductor wafer. The photoresist typically covers a dielectric base layer, such as an oxide layer (28). After a typical photoresist application, a typical test wafer (31) is submitted to an etching operation wherein pinhole sized defects in the photoresist layer (37) cause like defects to be etched through the underlying oxide layer (28). Thereafter, the wafer is submitted to an electrolytic treatment step, wherein the preferred process involves treating a positive photoresist in an alcohol with the wafer being cathodically coupled into the treating circuit. Activating light can be used simultaneously with the treatment. As an alternative, the photoresist is exposed prior to the electrolytic treatment of the wafer.

Abstract: Apparatus for electrostatically flock-coating elongated workpieces on a conveyor belt, wherein flock charged by an electrostatic field drops upon a workpiece from a feed opening located above the workpiece to be flock-coated, and excess flock is collected at the bottom of the apparatus and returned to the feed opening, which includes a stationary cylindrical inner housing having a substantially horizontal longitudinal axis and formed with a feed opening, the feed opening being elongated and located in a region of the cylindrical housing on an upper apex line thereof, the housing being also formed with a discharge gap in a lower region thereof whereat the conveyor belt is simultaneously disposed; a cylindrical outer jacket coaxially surrounding and spaced from the cylindrical inner housing and being rotatable about the inner housing; and elastic transport strips disposed in the space between the inner housing and the outer jacket and fastened to the outer jacket, the elastic transport strips extending along ge

Abstract: Can end disks have annular, curled rims on which a sealing composition is applied as a coat to form airtight seals when the end disks are subsequently attached to can bodies. The sealing composition is sprayed onto the curled rim of each can end disk by an overlying spray nozzle while the disk is being rotated on a rotary rest in a coating machine. For detecting uncoated regions on the curled rim of the can end disk, a photodetector is positioned over the rim of the disk on the rotary rest, with a preassigned angular spacing between the photodetector and the spray nozzle. The detection of uncoated regions is essentially concurrent with the application of the sealing composition. Since the output from the photodetector represents a nonfaulty uncoated region (i.e. a region not yet coated), in addition to a possible faulty uncoated region (i.e.