Abstract: Reinforced diamond nozzles and methods of making the same for fluid jet cutting applications are provided. An example method includes forming or providing a tubular diamond body having a jet passage extending therethrough and establishing a protective casing around the tubular diamond body so that an entirety or substantially an entirety of an outer circumferential surface area of the tubular diamond body is directly contacted and reinforced by the protective casing. Establishing the protective casing around the tubular diamond body may include thermal spraying, casting, direct metal laser sintering, or other fabrication techniques.

Abstract: The present invention relates to a method of producing a cord for a power transmission belt, the method including: a first treatment step of treating an untreated yarn of a cord for a power transmission belt with a first treatment agent including a resin component (A) to obtain a first treated yarn; and a second treatment step of treating the first treated yarn with a second treatment agent including a condensate (B1) of resorcin and formaldehyde, an unmodified latex (B2), and an acid-modified diene-based polymer (B3) to obtain a second treated yarn.

Abstract: A method of manufacturing a metal fabric or membrane, the method comprises providing an ink comprising a plurality of semiconductor particles disposed in a first solvent. The method comprises applying the ink to a fabric or membrane to obtain a fabric or membrane comprising a plurality of semiconductor particles. Finally, the method comprises contacting the fabric or membrane comprising the plurality of semiconductor particles with a deposition solution comprising a second solvent, an autocatalytic agent, and metal cations to thereby cause a reaction to occur such that the metal cations are reduced and at least partially displace the semiconductor particles, to thereby provide a metal fabric or membrane.

Abstract: Methods for forming phosphosilicate glass layers are disclosed. Exemplary methods include forming a silicon-containing layer overlying the substrate and depositing a phosphorus-containing layer overlying the substrate. The deposited phosphorus-containing layer can include P2O3 and/or exhibit a melting temperature less than or equal to 500° C. The deposited phosphorus-containing layer can be heated to flow and oxidized to provide desired properties.

Abstract: A method may include providing a fluid material, solidifying the fluid material, providing a substrate, and depositing the solidified fluid material on the substrate. Providing the fluid material may include providing a mold, and filling the mold with the fluid material. Solidifying the fluid material may include solidifying the fluid material in a mold, and removing the solidified fluid material from the mold. Providing the substrate may include preparing the substrate for deposition of the solidified fluid material, and adjusting the temperature of the substrate. Depositing the solidified fluid material on the substrate may include fixturing the substrate, and loading the solidified fluid material in a deposition tool. The fluid material may include a liquid phase component, and a solid phase component. The solid phase component may include particles suspended in the liquid phase component. The liquid phase component may include a gallium alloy.

Abstract: A method of sealing a surface is provided, the method comprising the steps of providing a metallic composition; providing a propellant; heating the metallic composition to above the melting point of the metallic composition to provide at least partially liquid metallic composition; accelerating the at least partially liquid metallic composition towards the surface by means of the propellant; and applying the at least partially liquid metallic composition to the surface.

Abstract: A method for depositing Parylene onto a substrate includes operating a first pyrolysis chamber at a first set of parameters to cause cracking of dimers into monomers at the first set of parameters and operating a second pyrolysis chamber at a second set of parameters to cause cracking of dimers into monomers at the second set of parameters. The method includes mixing the monomers at the first set of parameters with monomers at the second set of parameters together and polymerizing the mixture as a protective coating.

Abstract: Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.

Abstract: A method is provided for making a multilayer functional fiber, where the method includes: providing a scaffold fiber; disposing a first electrode layer enclosing the scaffold fiber; disposing a functional layer enclosing the first electrode layer, the functional layer having a functional characteristic varying as a function of longitudinal position along the functional layer; disposing a second electrode layer enclosing the functional layer; and disposing a cladding layer enclosing the second electrode layer. In another aspect, a multilayer functional fiber is provided produced by, for instance, the above-noted method.

Abstract: Examples of the present technology include semiconductor processing methods that may include generating a plasma from a deposition precursor in a processing region of a semiconductor processing chamber. The plasma may be generated at a delivered power within a first period of time when plasma power is delivered from a power source operating at a first duty cycle. The methods may further include transitioning the power source from the first duty cycle to a second duty cycle after the first period of time. A layer may be deposited on a substrate in the processing region of the semiconductor processing chamber from the generated plasma. The layer, as deposited, may be characterized by a thickness of 50 ? or less. Exemplary deposition precursors may include one or more silicon-containing precursors, and an exemplary layer deposited on the substrate may include an amorphous silicon layer.

Abstract: Methods and systems for forming high aspect ratio features on a substrate are disclosed. Exemplary methods include forming a first carbon layer within a recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the methods or systems are also disclosed.

Abstract: In exemplary embodiment, a method of top-selective deposition using a flowable carbon-based film on a substrate having a recess defined by a top surface, sidewall, and a bottom, includes steps of: (i) depositing a flowable carbon-based film in the recess of the substrate in a reaction space until a thickness of the flowable carbon-based film in the recess reaches a predetermined thickness, and then stopping the deposition step; and (ii) exposing the carbon-based film to a nitrogen plasma in an atmosphere substantially devoid of hydrogen and oxygen so as to redeposit a carbon-based film selectively on the top surface.

Abstract: A method of producing a negative electrode, which includes: providing a negative electrode roll on which a negative electrode structure is wound, the negative electrode structure includes a negative electrode current collector and a negative electrode active material layer on at least one surface of the negative electrode current collector; providing a pre-lithiation bath containing a pre-lithiation solution, which is sequentially divided into an impregnation section, a pre-lithiation section, and an aging section; impregnating the negative electrode structure with the pre-lithiation solution while unwinding the negative electrode structure from the negative electrode roll and moving the same through the sections. The pre-lithiation is performed by disposing a lithium metal counter electrode, which is spaced apart from the negative electrode structure and impregnated with the pre-lithiation solution, in the pre-lithiation section and electrochemically charging the negative electrode structure.

Abstract: Some embodiments of the invention belongs to a technical field of NdFeB magnet processing, and mainly relates to a device and method for improving the coercivity of ring-shaped NdFeB magnet. A layer of heavy rare earth coating is sprayed on the inner and outer surfaces of the ring-shaped NdFeB magnet by the device, and then the ring-shaped NdFeB magnet sprayed with the heavy rare-earth coating is subjected to diffusion treatment to improve the coercivity of the ring-shaped NdFeB magnet. The invention uses heavy rare earth slurry as the diffusion source, combined with spraying technology, can quickly and uniformly cover a layer of heavy rare earth coating on the inner and outer surfaces of the ring-shaped NdFeB magnet, and the coercivity of the ring-shaped NdFeB magnet is improved after heat treatment.

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a first plasma treatment and subjecting the substrate to a second plasma treatment. Thus the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a material on the lower surface.

Abstract: The present disclosure is directed to a showerhead for distributing plasma. The showerhead includes a perforated tile coupled to a support structure. A dielectric window is disposed over the perforated tile. An electrode is coupled to the dielectric window. An inductive coupler is disposed over the dielectric window. At least a portion of the inductive coupler is angled relative to at least a portion of the electrode.

Abstract: Methods and systems for forming a forming a nitrogen-containing carbon film and structures formed using the methods or systems are disclosed. Exemplary methods include providing a precursor with carbon-terminated carbon-nitrogen bonds. The methods can further include providing a reactant to the reaction chamber.

Abstract: The electrode production method disclosed herein has the steps of: preparing an electrode mix paste that contains at least an active material and a solvent; applying the electrode mix paste onto the surface of a collector; and drying a coating film made up of the electrode mix paste applied on the collector. The step of drying includes a residual heat period, a constant rate drying period, and a falling rate drying period. The coating film is pressed at least one time in the falling rate drying period, and the pressing is carried out under conditions such that film thickness of the coating film is not lower than 80% relative to 100% as the film thickness prior to the pressing.

Abstract: Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.

Abstract: The present invention relates to a method of deposition of thin metal layers on different substrates by electroless chemical method. In the method of the invention, the potential of the plating solution, i.e. a solution from which the metal deposition is carried out, is controlled with a redox buffer. The appropriate plating solution is also disclosed.