Patents Examined by Kathleen Duda
  • Patent number: 11366386
    Abstract: A patterning process, including: forming the first resist film from first resist material containing an acid generator and thermosetting compound having a hydroxy group and/or carboxy group protected by an acid-labile group; forming the second resist film on first resist film from a second resist material containing a metal compound (A) and a sensitizer; irradiating the first and second resist film with a high energy beam or an electron beam to perform pattern exposure to deprotect the hydroxy group and/or carboxy group in a pattern exposed portion of first resist film and to form a crosslinked portion of the component (A) with the deprotected hydroxy and/or carboxy group on the pattern exposed portion; and developing the second resist film with a developer to give a metal film pattern composed of the crosslinked portion. This provides a method for forming a thin film resist pattern with higher resolution and higher sensitivity.
    Type: Grant
    Filed: May 17, 2019
    Date of Patent: June 21, 2022
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tsukasa Watanabe, Tsutomu Ogihara
  • Patent number: 11361878
    Abstract: The present invention relates to a method for manufacturing an insulating layer which can minimize the degree of warpage caused by polymer shrinkage at the time of curing and secure the stability of a semiconductor chip located therein, and a method for manufacturing a semiconductor package using an insulating layer obtained from the manufacturing method of the insulating layer.
    Type: Grant
    Filed: July 2, 2018
    Date of Patent: June 14, 2022
    Assignee: LG CHEM, LTD.
    Inventors: Woo Jae Jeong, You Jin Kyung, Byung Ju Choi, Bo Yun Choi, Kwang Joo Lee, Min Su Jeong
  • Patent number: 11360388
    Abstract: Techniques herein include processes and systems by which a reproducible CD variation pattern can be mitigated or corrected to yield desirable CDs from microfabrication patterning processes, via resolution enhancement. A repeatable portion of CD variation across a set of wafers is identified, and then a correction exposure pattern is generated. A direct-write projection system exposes this correction pattern on a substrate as a component exposure, augmentation exposure, or partial exposure. A conventional mask-based photolithographic system executes a primary patterning exposure as a second or main component exposure. The two component exposures when combined enhance resolution of the patterning exposure to improve CDs on the substrate being processed without measure each wafer.
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: June 14, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Anton deVilliers, Ronald Nasman, Jeffrey Smith
  • Patent number: 11327396
    Abstract: A mask blank for manufacturing a transfer mask. A thin film (2) includes a material containing a metal, silicon, and nitrogen; a ratio of metal content[atom %] to the total content [atom %] of metal and silicon in the thin film (2) is 15% or less. When the thin film is subjected to an analysis of a secondary ion mass spectrometry and a distribution of a secondary ion intensity of silicon in depth direction, a ratio of 1.6 or less is obtained of (i) a maximum peak [Counts/sec] of a secondary ion intensity of silicon at a surface layer region, which is opposite from a transparent substrate (1), of the thin film (2), divided by (ii) an average value [Counts/sec] of a secondary ion intensity of silicon in a depth direction of an inner region, which is a region excluding the surface layer region and a vicinity region with an interface, of the transparent substrate (1) of the thin film (2).
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: May 10, 2022
    Assignee: HOYA CORPORATION
    Inventors: Atsushi Kominato, Toshiyuki Suzuki
  • Patent number: 11320738
    Abstract: In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: May 3, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Wei Wang, Ching-Yu Chang, Shang-Wern Chang, Yen-Hao Chen
  • Patent number: 11300881
    Abstract: A photolithography patterning stack and method for repairing defects in the stack. The stack includes an organic planarization layer, a hardmask layer, and a plurality of patterned photoresist lines in contact with the hardmask layer. A plurality of trenches is situated between the plurality of patterned photoresist lines. Each trench exposes a portion of the hardmask layer. A repairing layer is formed in contact with and only bonded to surfaces of the plurality of patterned photoresist lines. The method includes forming a photolithographic patterning stack. The stack includes at least a hardmask layer formed on one or more underlayers and a photoresist layer formed in contact with the hardmask layer. The photoresist layer is patterned into a plurality of patterned portions. A repairing layer is formed in contact with and only bonded to surfaces of each patterned portion of the plurality of portions.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: April 12, 2022
    Assignee: International Business Machines Corporation
    Inventors: Luciana Meli Thompson, Jing Guo, Nelson Felix, Ekmini Anuja De Silva
  • Patent number: 11294286
    Abstract: A photo mask for manufacturing a semiconductor device includes a first pattern extending in a first direction, a second pattern extending in the first direction and aligned with the first pattern, and a sub-resolution pattern extending in the first direction, disposed between an end of the first pattern and an end of the second pattern. A width of the first pattern and a width of the second pattern are equal to each other, and the first pattern and the second pattern are for separate circuit elements in the semiconductor device.
    Type: Grant
    Filed: February 27, 2019
    Date of Patent: April 5, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ru-Gun Liu, Chin-Hsiang Lin, Cheng-I Huang, Chih-Ming Lai, Chien-Wen Lai, Ken-Hsien Hsieh, Shih-Ming Chang, Yuan-Te Hou
  • Patent number: 11294285
    Abstract: A method for manufacturing the circuit board comprises following steps of forming a silver layer on each of two opposite surfaces of an insulating substrate, and forming a copper layer on each silver layer, thereby obtaining a middle structure; defining at least one through-hole on the middle structure, and each through-hole extending through each copper layer; forming a copper wiring layer on the copper layers to cover each through-hole and a portion region of the copper layers, the copper wiring layer comprising a copper conductive structure passing through each through-hole, the copper conductive structure connecting the copper layers; removing the copper layers not covered by the copper wiring layer; and etching the silver layers to form a silver wiring layer corresponding to the copper wiring layer, wherein a first etching liquid, which does not etch the copper wiring layer, is used for etching the silver layers.
    Type: Grant
    Filed: April 8, 2020
    Date of Patent: April 5, 2022
    Assignees: HongQiSheng Precision Electronics (QinHuangDao) Co., Ltd., Avary Holding (Shenzhen) Co., Limited.
    Inventors: Xian-Qin Hu, Mei Yang, Jun Dai
  • Patent number: 11281107
    Abstract: Methods for performing a lithography process are provided. The method for performing a lithography process includes forming a resist layer over a substrate and exposing a portion of the resist layer to form an exposed portion between unexposed portions. The method for performing a lithography process further includes developing the resist layer to remove the exposed portion of the resist layer such that an opening is formed between the unexposed portions and forming a post treatment coating material in the opening and over the unexposed portions of the resist layer. The method for performing a lithography process further includes reacting a portion of the unexposed portions of the resist layer with the post treatment coating material by performing a post treatment process and removing the post treatment coating material.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: March 22, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Hui Weng, Ching-Yu Chang, Chin-Hsiang Lin
  • Patent number: 11249399
    Abstract: A photolithography method, a method of preparing a flexible substrate and a photoresist drying device are provided. The photolithography method includes: providing a base substrate on which a material layer to be etched is formed, in which the base substrate includes an intermediate region and a peripheral region surrounding the intermediate region; coating a layer of photoresist on the base substrate, in which the photoresist is coated in the intermediate region and the peripheral region, and is formed to cover the material layer to be etched; and drying the photoresist and simultaneously performing a first exposure process on the photoresist coated in the peripheral region.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: February 15, 2022
    Assignees: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Cheng Tang, Zebin Sun, Zhen Zhen, Hao Zhang, Shitao Zhang, Xinxing Fan, Xudong Zhang
  • Patent number: 11249398
    Abstract: A method for producing a plated shaped structure, includes applying a photosensitive resin composition on a substrate to form a photosensitive resin coating film. The photosensitive resin composition includes: (A) a resin whose solubility in alkali is capable of being increased by an action of an acid; (B) a photoacid generator; and (C) a compound which is capable of being decomposed by an action of an acid to form a primary or secondary amine. The photosensitive resin coating film is exposed to light. The photosensitive resin coating film is developed after the exposing to light to form a resist pattern. A plating process is performed using the resist pattern as a mask.
    Type: Grant
    Filed: September 4, 2019
    Date of Patent: February 15, 2022
    Assignee: JSR CORPORATION
    Inventors: Hirokazu Sakakibara, Hirokazu Itou, Tomoyuki Matsumoto, Kazuto Watanabe
  • Patent number: 11243469
    Abstract: A substrate processing apparatus includes a development processor and a reversal film former, and processes a substrate having one surface on which a resist film made of a photosensitive material is formed. The development processor forms a resist pattern on the one surface of the substrate by performing development processing on a resist film using a development liquid. A reversal film former forms a reversal film having etch resistance higher than that of the resist film on the one surface of the substrate to cover the resist pattern while regulating a temperature of the substrate in a certain range after the development processing is performed by the development processor.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: February 8, 2022
    Inventors: Masahiko Harumoto, Koji Kaneyama, Yuji Tanaka, Masaya Asai
  • Patent number: 11231649
    Abstract: A patterning process, including steps of: forming the first resist film from the first resist material containing a thermosetting compound having a hydroxy group and/or a carboxy group each protected by an acid-labile group, an acid generator, and a sensitizer; irradiating the first resist film with a high energy beam or an electron beam to perform pattern exposure to deprotect the hydroxy group and/or carboxy group in a pattern exposed portion; forming the second resist film from second resist material containing (A) metal compound on the first resist film, and forming a crosslinked portion wherein the component (A) and deprotected hydroxy group and/or deprotected carboxy group are crosslinked on the pattern exposed portion; and developing the second resist film with a developer to give a metal film pattern composed of the crosslinked portion. This provides a method for forming a thin film resist pattern with higher resolution and higher sensitivity.
    Type: Grant
    Filed: May 17, 2019
    Date of Patent: January 25, 2022
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tsukasa Watanabe, Tsutomu Ogihara
  • Patent number: 11226562
    Abstract: A method of manufacturing a semiconductor structure includes providing a mask including a first substrate; a first mask layer disposed over the first substrate, including a plurality of first recesses extended through the first mask layer; a second mask layer disposed over the first mask layer and including a plurality of second recesses extended through the second mask layer; providing a second substrate including a photoresist disposed over the second substrate; and projecting a predetermined electromagnetic radiation through the mask towards the photoresist, wherein the first mask layer is at least partially transparent to the predetermined electromagnetic radiation, the second mask layer is opaque to the predetermined electromagnetic radiation, and at least a portion of the second mask layer is disposed between two of the plurality of second recesses.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: January 18, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yung-Yao Lee, Yi-Ping Hsieh
  • Patent number: 11215927
    Abstract: Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: January 4, 2022
    Assignees: SAMSUNG ELECTRONICS CO., LTD., NISSAN CHEMICAL CORPORATION
    Inventors: Ju-Young Kim, Hyunwoo Kim, Makoto Nakajima, Satoshi Takeda, Shuhei Shigaki, Wataru Shibayama
  • Patent number: 11209728
    Abstract: Present disclosure provide a method for fabricating a mask, including obtaining a target pattern to be imaged onto a substrate, providing a first scattering bar and a second scattering bar adjacent to consecutive edges of the target pattern, identifying a first length of the first scattering bar and a second length of the second scattering bar, connecting the first scattering bar and the second scattering bar when any of the first length and the second length is smaller than a predetermined value, identifying a separation between the first scattering bar and the second scattering bar subsequent to identifying the first length and the second length, disposing the first scattering bar and the second scattering bar in a first fashion when the separation is equal to zero, and disposing the first scattering bar and the second scattering bar in a second fashion when the separation is greater than zero.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: December 28, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Huang-Ming Wu, Jiun-Hao Lin, Jia-Guei Jou, Chi-Ta Lu, Chi-Ming Tsai
  • Patent number: 11209736
    Abstract: A method for manufacturing a photomask is provided. The method includes: receiving a substrate having a hard mask disposed thereover; forming a patterned photoresist over the hard mask; patterning the hard mask using the patterned photoresist as a mask; and removing the patterned photoresist. The removing of the patterned photoresist includes: oxidizing organic materials over the substrate; applying an alkaline solution onto the patterned photoresist; and removing the patterned photoresist by mechanical impact. A method for cleaning a substrate and a photomask are also provided.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: December 28, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yu-Hsin Hsu, Hao-Ming Chang, Shao-Chi Wei, Sheng-Chang Hsu, Cheng-Ming Lin
  • Patent number: 11199778
    Abstract: A method of making an adhesion layer of an extreme ultraviolet (EUV) stack is presented. The method includes grafting an ultraviolet (UV) sensitive polymer brush on a hardmask, the polymer brush including a UV cleavable unit, depositing EUV resist over the polymer brush, exposing the EUV resist to remove the EUV resist in exposed areas by applying a developer, and flooding the exposed area with a UV light and a solvent developer to remove exposed portions of the polymer brush.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: December 14, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jing Guo, Bharat Kumar, Ekmini A. De Silva, Jennifer Church, Dario Goldfarb, Nelson Felix
  • Patent number: 11187984
    Abstract: A resist patterning method includes a resist layer forming step, a patterned exposure step, a flood exposure step, and a developing step. In the resist layer forming step, a resist layer is formed on a substrate. In the patterned exposure step, a sensitizer is produced from a sensitizer precursor in the resist layer. In the flood exposure step, flood exposure is performed on the resist layer in which the sensitizer has been produced to produce an acid from a strong acid generator. In the developing step, the resist layer is developed. The patterned exposure step includes: producing a strong acid from the strong acid generator; producing the sensitizer through a reaction between the strong acid and the sensitizer precursor; producing a weak acid through a reaction between the strong acid and a base; and producing the sensitizer through a reaction between the weak acid and the sensitizer precursor.
    Type: Grant
    Filed: November 25, 2016
    Date of Patent: November 30, 2021
    Assignee: OSAKA UNIVERSITY
    Inventor: Seiichi Tagawa
  • Patent number: 11175582
    Abstract: This disclosure relates to a photosensitive stacked structure that includes first and second layers, in which the first layer is a photosensitive, dielectric layer and the second layer is a photosensitive layer. The dissolution rate of the first layer in a developer is less than the dissolution rate of the second layer in the developer.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: November 16, 2021
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Sanjay Malik, Raj Sakamuri, Ognian N. Dimov, Binod B. De, William A. Reinerth, Ahmad A. Naiini