Abstract: A shutter disk having a tuned coefficient of thermal expansion is provided herein. In some embodiments, a shutter disk having a tuned coefficient of thermal expansion may include a body formed from a first material comprising at least two components, wherein a ratio of each of the at least two components to one another is selected to provide a coefficient of thermal expansion of the body that is substantially similar to a coefficient of thermal expansion of a second material to be deposited atop the body.

Abstract: Methods for fabricating sub-lithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.

Abstract: An apparatus and associated method for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate includes a deposition head wherein a source material is sublimated. A distribution manifold is provided with a plurality of passages defined therethrough for passage of the sublimated source material to the substrate. A shutter plate is disposed above the distribution manifold and includes a plurality of passages therethrough that align with the passages in the distribution manifold in a first position of the shutter plate. The shutter plate is movable to a second position wherein the shutter plate blocks the passages in the distribution manifold to flow of sublimated material therethrough. A lifting mechanism is configured between the shutter plate and the distribution manifold to lift and move the shutter plate between the first and second positions without sliding the shutter plate on the distribution manifold.

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

Abstract: A point source assembly for a thin film deposition device having a chamber for holding a substrate, includes a crucible configured for holding and vaporizing a deposition material therein, where the crucible is configured for operative engagement to the chamber, an opening in the crucible configured for directing therefrom a vaporized form of the deposition material, where the opening includes a longitudinal line extending through the center of the crucible opening, and means operatively engaged to the crucible for facilitating rotational movement of the crucible for varying the orientation of the longitudinal line relative to the position of the substrate in the chamber.

Abstract: A substrate processing apparatus capable of preventing the abnormal discharge from being generated on a substrate. A housing chamber houses the substrate. A mounting stage arranged in the housing chamber, is configured to enable the substrate to be mounted thereon. A disc-like electrode structure is connected to a high-frequency power supply, and connected to a gas supply apparatus via at least one gas supply system. The electrode structure has therein at least one buffer chamber and a plurality of connecting sections connected to the gas supply system. The buffer chamber is communicated with the inside of the housing chamber via a number of gas holes, and is communicated with the gas supply system via the plurality of connecting sections. The plurality of connecting sections for the buffer chamber are arranged on the circumference of a circle centering around the center of the electrode structure at equal intervals.

Abstract: A thin film deposition apparatus and a method of manufacturing an organic light-emitting display device using the thin film deposition apparatus. The thin film deposition apparatus includes a plurality of thin film deposition assemblies, each of which includes: a deposition source that discharges a deposition material; a deposition source nozzle unit that is disposed at a side of the deposition source and includes a plurality of deposition source nozzles; a patterning slit sheet that is disposed opposite to the deposition source nozzle unit and includes a plurality of patterning slits arranged in a first direction; and a barrier plate assembly that is disposed between the deposition source nozzle unit and the patterning slit sheet, in the first direction. The barrier plate assembly includes a plurality of barrier plates that partition a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces.

Abstract: Thermal management of film deposition processes. In one aspect, a deposition system includes a vacuum chamber defining an evacuated interior volume, a deposition source disposed within the interior volume, a substrate holder disposed within the interior volume and arranged to hold a substrate with a first surface of the substrate facing the deposition source and a second surface of the substrate disposed facing away from the deposition source, and a heat sink disposed to have a first side of the heat sink in radiative thermal contact with the second surface of the substrate held by the substrate holder, the first side of the heat sink comprising a collection of features having a longitudinal dimension that is four or more times larger than a lateral dimension between the features, the features thereby dimensioned and aligned to reflect, multiple times in succession, radiative thermal emissions of the second surface of the substrate.

Abstract: A deposition apparatus includes a coating chamber and a coating zone within the coating chamber for coating work pieces. A heating source heats the coating zone, and a thermal hood within the coating chamber is located adjacent to the coating zone for controlling a temperature of the coating zone.

Abstract: A thin film deposition apparatus that forms a thin film on a substrate includes: a deposition source that discharges a deposition material; a deposition source nozzle unit that is disposed at a side of the deposition source and includes a plurality of deposition source nozzles; a patterning slit sheet that is disposed opposite to the deposition source nozzle unit and includes a plurality of patterning slits; and a blocking member that is disposed between the substrate and the deposition source, wherein the thin film deposition apparatus is separated from the substrate by a predetermined distance, the substrate is moved relative to the thin film deposition apparatus, and the blocking member is moved along with the substrate to screen at least one portion of the substrate.

Abstract: A heat equalizer includes a container structure having a heating block in which a working fluid is held for heating and vaporizing a material to be heated, a heater placed at the bottom of the container structure, and a material feed pipe allowing the outside and the inside of the container structure to communicate with each other. In the heating block, as a flow path in which the material to be heated flows, a main header pipe connected to the material feed pipe and extending in the horizontally, and a riser pipe branching from the main header pipe and extending vertically are formed. As a condensation path in which the working fluid is cooled and condensed, condensation holes formed respectively on the opposite sides of the riser pipe and extending horizontally, and a condensation pit formed under the riser pipe are formed. Between the condensation holes and the condensation pit, the main header pipe is placed.

Abstract: A process chamber includes a wafer support to mount a wafer to be processed in the process chamber, with the wafer having an annular edge exclusion area. A first electrically grounded ring extends in an annular path radially outward of the edge exclusion area and is electrically isolated from the wafer support. A second electrode is configured with a center area opposite to the wafer support. A second electrically grounded ring extends in an annular path radially outward of the second electrode and the edge exclusion area. The second electrically grounded ring is electrically isolated from the center area. An annular mount section has a DC bias ring, and the DC bias ring opposes the edge exclusion area when the wafer is present. A DC control circuit is provided for applying a DC voltage to the DC bias ring.

Abstract: A crucible (50) of the present invention includes: an opening (55a) from which vapor deposition particles are injected toward a film formation substrate on which a film is to be formed; a focal point member (54a), provided so as to face the opening (55a), which reflects vapor deposition particles injected from the opening (55a); and a revolution paraboloid (55b) which reflects, toward the film formation substrate, vapor deposition particles which have been reflected by the focal point member (54a).

Abstract: A plasma processing apparatus includes a processing gas supplying unit for supplying a desired processing gas to a processing space between an upper electrode and a lower electrode which are disposed facing each other in an evacuable processing chamber. The plasma processing apparatus further includes a radio frequency (RF) power supply unit for applying an RF power to one of the lower and the upper electrode to generate plasma of the processing gas by RF discharge and an electrically conductive RF ground member which covers a peripheral portion of the electrode to which the RF power is applied to receive RF power emitted outwardly in radial directions from the periphery portion of the electrode to which the RF power is applied and send the received RF power to a ground line.

Abstract: A side gas injector for a plasma reaction chamber is provided. The side gas injector includes a circular distribution plate and a cover plate. The circular distribution plate includes an injection hole for injecting a reaction gas and a distribution channel part for distributing the reaction gas such that the reaction gas introduced from the injection hole can be radially simultaneously jetted in a plurality of positions along an inner circumference surface of the distribution plate. The cover plate is coupled to a top of the distribution plate and seals a top of the distribution channel part.

Abstract: A vapor deposition apparatus includes a linear head including a plurality of nozzles, and an angle controller controlling an inclined angle of the linear head. The angle of inclination of the linear head can be varied so as to position different portions of the linear head at different distances from the surface of a substrate.

Abstract: A vapor deposition apparatus includes a deposition chamber, an umbrella-shaped supporting member, a plurality of coating precursor sources. The umbrella-shaped supporting member is received in the deposition chamber. The supporting member is configured for supporting a number of workpieces. The coating precursor sources oppose the supporting member. Each coating precursor source includes a stationary sleeve and a moveable member moveably received in the stationary sleeve. The moveable member defines a recess for receiving a coating material in a top end of the moveable member opposing the supporting member. The moveable members are moveable relative to the respective stationary sleeve such that a distance between the supporting member and the coating material in each recess can be adjusted.

Abstract: The present invention provides an evaporation device for which maintenance is readily conducted, and further, provides an electrode cover which can prevent an evaporation material from being adhered to electrodes. Moreover, the present invention provides an evaporation device including an evaporation chamber; a holding portion for holding an object to be treated; an evaporation source; an electrode; an electrode cover; and a power supply, in which the evaporation chamber includes the holding portion in an upper portion, and includes the evaporation source, the electrode, and the electrode cover in a lower portion; the electrode cover covers at least a part of an exposed surface of the electrode; the electrode and the power supply are electrically connected.

Abstract: The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate, and a first grid in the first ion beam generator, and a second grid in the second ion beam generator are configured so as to be asymmetrical to each other.

Abstract: A method and apparatus for improving coating of a substrate.