Abstract: The invention relates to the field of methods of depositing a material on a substrate. It relates to a method of depositing, onto a substrate, a material that acts as a thermal barrier and that prior to deposition is in powder form. The powder is introduced into the plasma jet of a first plasma torch and into the plasma jet of at least one second plasma torch, the first plasma torch and at least the second plasma torch being disposed in an enclosure and oriented in such a manner that their plasma jets cross, so as to create a resultant plasma jet in which the powder is vaporized, the substrate being placed on the axis of the resultant plasma jet.

Abstract: A system for recycling includes a processing chamber, a reclamation reservoir and a mixing reservoir. The processing chamber is configured to receive a deposition gas deposited onto a semiconductor layer. The processing chamber has an exhaust to discharge an unused portion of the deposition gas as an effluent gas. The reclamation reservoir is in fluid communication with the processing chamber. The reclamation reservoir is configured to receive and store the effluent gas from the processing chamber. The mixing reservoir is in fluid communication with the reclamation reservoir and the processing chamber. The mixing reservoir is configured to mix the effluent gas with a virgin gas to form a recycled deposition gas. The mixing reservoir supplies the recycled deposition gas to the processing chamber to deposit an additional portion of the semiconductor layer.

Abstract: Chambers for processing a bevel edge of a substrate are provided. One such chamber includes a bottom electrode defined to support a substrate in the chamber. The bottom electrode has a bottom first level for supporting the substrate and a bottom second level near an outer edge of bottom electrode. The bottom second level is defined at a step below the bottom first level. Further included is a top electrode oriented above the bottom electrode. The top electrode having a top first level and a top second level, where the top first level is opposite the bottom first level and the top second level is opposite the bottom second level. The top second level is defined at a step above the top first level. A bottom ring mount oriented at the bottom second level is included. The bottom ring mount includes a first adjuster for moving a bottom permanent magnet toward and away from the top electrode. Further included is a top ring mount oriented at the top second level.

Abstract: An apparatus for coating a substrate using physical vapor deposition, including a vacuum chamber wherein a coil is placed for keeping an amount of conductive material in levitation and for heating and evaporating that material, using a varying electric current in the coil. Isolating member are placed in the coil to isolate the coil from the levitated material. The isolating member is part of a container made of non-conductive material. The container has one or more openings for guiding evaporated conductive material to the substrate to be coated. A method for coating a substrate using physical vapor deposition is also presented.

Abstract: The hydrophobicizing apparatus includes a vaporizing surface forming member of which surface is located in a vaporizing room; a vaporizing surface heating unit that heats the vaporizing surface forming member; a liquid chemical supply port that supplies a liquid chemical for a hydrophobicizing process on the surface of the vaporizing surface forming member; a gas inlet port that introduces a carrier gas into the vaporizing room; an outlet port that supplies a hydrophobicizing gas vaporized in the vaporizing room; and a processing chamber that performs the hydrophobicizing process on a substrate accommodated therein by the hydrophobicizing gas supplied through the outlet port. With this configuration, the hydrophobicizing gas of a high concentration can be supplied onto the substrate. Further, since the stored liquid chemical is not in contact with the carrier gas when a process is not being performed, degradation of the liquid chemical is suppressed.

Abstract: An electron beam vapor deposition apparatus includes a coating chamber including a coating zone for depositing a coating on a work piece. A coating device includes at least one crucible for presenting at least one source coating material. The coating device includes a first deposition mode of depositing the at least one source coating material and a second deposition mode of depositing the at least one source coating material. At least one electron beam source evaporates the at least one source coating material for deposit onto the work piece. A controller is configured to control a speed of movement of the work piece in the coating zone during the coating operation in response to the first deposition mode and the second deposition mode.

Abstract: Disclosed is a substrate processing apparatus in which a plurality of rod-like ceramic heaters are arranged in the form of islands and affixed to the top plate of a process chamber so as to face a wafer, and the lower end portion of each ceramic heater is provided with a metal catalyst layer in such a manner that the metal catalyst layer faces a gas discharge hole of a gas diffusion plate. Consequently, the metal catalyst layer is indirectly heated by the ceramic heater (a resistance heating wire), thereby activating a processing gas.

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.

Abstract: A mask frame assembly for thin film deposition including a frame having an opening portion and a support portion, and a mask having a deposition area in a position corresponding to the opening portion, wherein the mask includes a first layer including the deposition area and a peripheral portion disposed outside the deposition area and a second layer including a first surface and a second surface opposite to the first surface, at least a part of the first surface of the second layer faces the first layer and contacts the peripheral portion, and the second surface is welded to the support portion of the frame.

Abstract: There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.

Abstract: A barrel susceptor for supporting semiconductor wafers in a heated chamber having an interior space. Each of the wafers has a front surface, a back surface and a circumferential side. The susceptor includes a body having a plurality of faces arranged around an imaginary central axis of the body. Each face has an outer surface and a recess extending laterally inward into the body from the outer surface. Each recess is surrounded by a rim defining the respective recess. The susceptor also includes a plurality of ledges extending outward from the body. Each of the ledges is positioned in one of the recesses and includes an upward facing support surface for supporting a semiconductor wafer received in the recess. Each of the support surfaces is separate from the outer surface of the respective face.

Abstract: Provided is a method of manufacturing an organic light emitting device including the step of forming an electron injection layer. The step of forming the electron injection layer includes the steps of: vaporizing in a container a dopant material as a raw material of a dopant; causing the vaporized dopant material to pass a heated medium between the container and the substrate; and forming the organic compound into the electron injection layer. According to the method the organic light emitting device which has high electron injection efficiency and can be driven at a low voltage can be obtained.

Abstract: One aspect involves: supporting a workpiece with workpiece support structure that includes spaced support parts, a support section supporting the support parts, and a workpiece holding adhesive on each support part, where the adhesives engage respective regions of a surface portion on the workpiece; and supplying a coating material toward a different surface portion of the workpiece. A different aspect involves: supporting a workpiece with workpiece support structure that includes a workpiece support member with a surface portion extending approximately parallel to a direction, and a workpiece support part having two adhesive portions that respectively engage the surface portion on the support member and a surface portion on the workpiece; and supplying a coating material in the direction, toward a different surface portion of the workpiece.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes.

Abstract: Prior to wafer processing, pressure ratio control is executed on a divided flow rate adjustment means so as to adjust the flow rates of divided flows to achieve a target pressure ratio with regard to the pressures in the individual branch passages. As the processing gas from a processing gas supply means is diverted into first and second branch pipings under the pressure ratio control and the pressures in the branch passages then stabilize, the control on the divided flow rate adjustment means is switched to steady pressure control for adjusting the flow rates of the divided flows so as to hold the pressure in the first branch passage at the level achieved in the stable pressure condition. Only after the control is switched to the steady pressure control, an additional gas is delivered into the second branch passage via an additional gas supply means.

Abstract: The present invention relates to an evaporation source used in a vacuum deposition apparatus for forming an organic film or a metal film. The present invention provides an evaporation source including: a crucible accommodating a deposition material and having an opening portion through which the deposition material passes; a mesh member installed in the opening portion of the crucible and having a plurality of holes; and thermally conductive balls coated on the mesh member. Here, the thermally conductive balls are provided to cover the deposition material having a predetermined interval with the deposition material, not being mixed with the deposition material filling the crucible.

Abstract: Apparatus for a deposition system includes a sealing apparatus that seals the drive shaft from the deposition material to prevent the deposition material from adhering to the drive shaft, a moving apparatus to reduce the weight of a shelf on the drive shaft, and a collision-preventing apparatus that measures the distance between a shelf and an adjacent article.

Abstract: A film coating system for coating an object includes a working station and an isolating device. The object is disposed on the working station, and the isolating device is utilized to isolate the object. The isolating device includes a body generating a first power, a first working fluid, a second working fluid, a first guiding portion and a second guiding portion. The first guiding portion guides the first working fluid to pass through the body, thereby forming a first working region to coat the object thereon. The second guiding portion guides the second working fluid excited by the first power of the body to pass through the body, thereby forming a second working region to separate the first working region from the object.

Abstract: Vacuum treatment installation particularly for plasma coating workpieces, has an arrangement for boosting and/or igniting a glow discharge plasma for the treatment of workpieces, and at least one hollow body of electrically conductive material, the hollow body including a hollow space and at least one entrance opening through which charge carriers flow in order to make possible ignition and operation of a plasma or to boost an existing plasma. The hollow body is electrically connected to workpieces so that the hollow body is essentially at workpiece potential. The hollow space is formed such that when an electric signal is applied to the hollow body, at least in a certain pressure and voltage range, geometric conditions for the ignition of a discharge in the interior of the hollow body are satisfied, and the at least one hollow body is not a workpiece carrier.