Abstract: A switch assembly includes a switch unit including a button and an arm extending from the button along a height direction, the arm including first and second contact portions spaced apart from each other along a longitudinal direction; and a slider unit extending along a width direction and including a nose to contact the first and second contact portions respectively at first and second engagement positions. The switch assembly provides a reduced need for space and enhanced friendliness in touch and feel.

Abstract: A composite electronic component includes a capacitor device and a resistor device disposed on one another in a heightwise direction. The capacitor device includes a capacitor body, a first external electrode, and a second external electrode. The resistor device includes a base portion, a resistor body, a first upper surface conductor, a second upper surface conductor, a first lower surface conductor, a second lower surface conductor, a first end surface connection conductor, and a second end surface connection conductor. An upper surface of the base portion of the resistor device faces a lower surface of the capacitor body of the capacitor device, the first upper surface conductor and the first external electrode are electrically connected, and the second upper surface conductor and the second external electrode are electrically connected.

Abstract: A composite electronic component includes an electronic element mounted on a resistance element in a height direction. The electronic element includes an electronic element body, and first and second external electrodes separated from each other in a length direction. The resistance element includes a base portion, a resistor disposed on an upper surface of the base portion, and first and second upper surface conductors on the upper surface of the base portion. The first and second upper surface conductors are separated from each other in the length direction, and the resistor is located between the first and second upper surface conductors. A dimension in the height direction of the resistor is smaller than both a dimension in the height direction of the first external electrode of a portion located on a lower surface of the electronic element body, and a dimension in the height direction of the second external electrode of a portion located on a lower surface of the electronic element body.

Abstract: A ceramic material has a composition represented by Cax?NaxMny?MyO12, wherein M denotes at least one of Ni and Cu, and x?, x, y?, and y satisfy any of (a), (b), and (c) in which x?+x=X and y?+y=Y: 0.9 7.0 ? X Y < 1.0 7.0 ; ( a ) at a condition of X Y = 1.0 7.0 , 0.03 8 ? x X + Y < 0.30 8 ? ? and ? ? 0 ? y X + Y ? 0.35 8 ; and ( b ) 1.0 7.0 < X Y ? 1.0 6.9 .

Abstract: A chip resistor includes an insulating substrate, a resistive element provided on an upper surface of the insulating substrate, a pair of upper-surface electrodes provided on respective ones of both end portions of an upper surface of the resistive element so as to expose a part of the upper surface of the resistive element from the upper-surface electrodes, and a protective layer that covers the part of the resistive element and that does not cover the pair of upper-surface electrodes. The pair of upper-surface electrodes have exposed upper surfaces and exposed edge surfaces, respectively. Each of the edge surfaces of the pair of upper-surface electrodes does not project outward from respective one of the edge surfaces of the insulating substrate. The chip resistor can reduce a temperature coefficient of resistance to improve the temperature coefficient of resistance.

Abstract: A resistor comprises a substrate, an upper ohmic region disposed on a selective one of an upper surface and a lower surface of the substrate and a lower ohmic region disposed on the other one of the upper surface and the lower surface of the substrate. An upper metal conducting layer overlies on the substrate and the upper ohmic region, and a lower metal conducting layer overlies on the lower ohmic region. When the upper and lower metal conducting layers are electrified, the upper ohmic region and the lower ohmic region are electrically connected, and a contact interface between the substrate and the upper metal conducting layer forms an enlarged depletion region to block electrical conduction therebetween. As a result, a resistance value of the resistor is increased when an applied voltage on the resistor is increased.

Abstract: A varistor device includes a main body, a conductive area, a specific-melting-point metallic pin, and an elastic unit. The main body has a first surface, and the conductive area is located at the first surface. The specific-melting-point metallic pin has a first section and a second section. The first and the second sections are one-piece formed. The first section is fixedly disposed on the conductive area. The second section has a specific melting point such that the second section melts when a current flows between the first surface and the second section so as to expose the second section to a temperature greater than the specific melting point. The elastic unit has an end connected to the second section, and the elastic unit provides an elastic force to the second section to break the second section so as to cut off the current when the second section melts.

Abstract: A voltage divider circuit assembly includes resistors, an external electrostatic shield, and internal electrostatic shield(s). The resistors are in series with each other between input terminals that receive an input voltage. An external resistor is disposed between sensing terminals that conduct an output voltage that is the input voltage divided by the resistors in the series. The external shield is conductively coupled with the series of the resistors with the external resistor disposed outside of the external shield and the other resistor(s) inside the external shield. The internal shield(s) are conductively coupled with the resistors and disposed inside the external shield. A first internal resistor is disposed inside the external shield and outside of the internal shield(s). One or more remaining resistors are inside the internal shield(s). The shields divide parasitic capacitances to enable the measurement of dynamically changing high voltage input signals.

Abstract: The resistor includes a chip resistive element which includes a resistive element and metal electrodes and which is formed on first surface of a ceramic substrate, metal terminals electrically joined to the metal electrodes, and an Al member formed on the second surface side of the ceramic substrate, wherein the ceramic substrate and the Al member are joined using an Al—Si-based brazing filler metal, the metal electrodes and the metal terminals are joined to each other using a solder, and a degree of bending of an opposite surface of the Al member opposite to a surface on the ceramic substrate side is in a range of ?30 ?m/50 mm to 700 ?m/50 mm.

Abstract: Provided is a thin-film resistor that has a higher resistance value than the conventional thin-film resistors while retaining excellent TCR characteristics. The thin-film resistor includes a substrate, a pair of electrodes formed on the substrate, and a resistive film connected to the pair of electrodes. The resistive film includes a first resistive film and a second resistive film, the second resistive film having a different TCR from that of the first resistive film, and each of the first resistive film and the second resistive film contains Si, Cr, and N as the main components.

Abstract: A terminal-thermistor assembly may include a thermistor and a terminal. The thermistor may include a body encasing a temperature-sensing element. The terminal may include a shaft and a housing disposed on an end of the shaft. The housing may include a cavity, a protrusion extending into the cavity and a cantilevered spring element. The spring element may be resiliently flexible between a first position in which a space between the spring element and the protrusion is less than a thickness of the body of the thermistor and a second position in which the space between the spring element and the protrusion is equal to the thickness of the body. A first surface of the thermistor body may contact the spring element and a second surface of the thermistor body opposite the first surface may contact the protrusion when the body is received within the cavity.

Abstract: The invention relates to a chip resistor. A method of manufacturing a chip resistor comprises the steps of: (a) applying a conductive paste on an insulating substrate, wherein the conductive paste comprises, (i) 40 to 80 weight percent (wt. %) of a conductive powder; (ii) 1 to 14 wt. % of a glass frit, (iii) 0.01 to 3 wt. % of magnesium oxide (MgO), and (iv) 10 to 55 wt. % of an organic vehicle, wherein the wt. % is based on weight of the conductive paste; (b) firing the applied conductive paste to form the front electrodes.

Abstract: An electronic device includes a support member, an ornamental member that is assembled to face one face of the support member, and an operating member that is disposed on the support member to be partially exposed to the outside through the ornamental member. The operating member includes a body that is positioned on one face of the support member to be exposed through the ornamental member, and at least one pair of fastening pieces, each of which extends from the body to be fastened to the support member. Other embodiments are also disclosed.

Abstract: The invention is to provide a chip resistor suitable for lowering an initial resistance value. A chip resistor 1 according to the present invention is provided with: an insulating substrate 2; a pair of front electrodes 3 which are provided on a front surface of the insulating substrate 2 so as to face each other with a predetermined interval therebetween; a resistive element 4 which is provided so as to bridge the front electrodes 3; a pair of auxiliary electrodes 5 which are provided so as to cover the front electrodes 3 and overlap end portions of the resistive element 4; and the like. The chip resistor 1 is configured such that: the front electrodes 3 are formed of a material which contains 1 to 5 wt % Pd and the balance Ag; and the auxiliary electrodes 5 are formed of a material which contains 15 to 30 wt % Pd and a metal material (e.g. Au) lower in resistivity than Pd and the balance Ag.

Abstract: A circuit protection device includes a metal oxide varistor (MOV), a spring terminal and a thermal disconnect coupling the spring terminal to the MOV. A gas discharge tube (GDT) is coupled to the MOV. The spring terminal is biased such that upon occurrence of an overvoltage condition, heat generated by the MOV melts the thermal disconnect and allows the spring terminal to be displaced away from the MOV, thereby creating an opening circuit.

Abstract: A chip resistor element includes an insulating substrate, a resistor layer, first and second internal electrodes, a resistor protection layer, first and second electrode protection layers, and first and second external electrodes. The resistor layer is on the insulating substrate, the first and second internal electrodes are on respective sides of the resistor layer, and the resistor protection layer covers the resistor layer and extends onto portions of the internal electrodes. The first electrode protection layers are on the first and second internal electrodes so as to overlap with portions of the resistor protection layer and contain first conductive powder particles and resin, while the second electrode protection layers are disposed on the first electrode protection layers and contain second conductive powder particles and resin. A content of resin in the second electrode protection layer is lower than in the first electrode protection layer.

Abstract: A chip resistor includes first and second electrodes spaced apart from each other, a resistor element arranged on the first and the second electrodes, a bonding layer provided between the resistor element and the two electrodes, and a plating layer electrically connected to the resistor element. The first electrode includes a flat outer side surface, and the resistor element includes a side surface facing in the direction in which the thirst and the second electrodes are spaced. The outer side surface of the first electrode is flush with the side surface of the resistor element. The plating layer covers at least a part of the outer side surface of the first electrode in a manner such that the covering portion of the plating layer extends from one vertical edge of the outer side surface to the other vertical edge.

Abstract: An electronic apparatus having a switch device capable of suppressing collision noise is disclosed. The switch device is equipped with a first fixed contact and a second fixed contact, and a metal dome that serves as a movable contact movable in a direction to be contacted with or separated from the first fixed contact. In a configuration in which the metal dome is moved to provide an electrical contact or a separation between the metal dome and the first fixed contact, whereby the first fixed contact and the second fixed contact are electrically connected therebetween, a conductive layer made of an anisotropic conductive sheet is provided between the first fixed contact and the metal dome.

Abstract: Provided is a chip resistor having wide and flat end-face electrodes on a surface thereof and having increased connection reliability between upper electrodes and the end-face electrodes.

Abstract: A voltage nonlinear resistor ceramic comprises: a Zn oxide; a Co oxide; an R (specific rare earth) oxide; a Cr oxide; an M1 (Ca, Sr) oxide; an M2 (Al, Ga, In) oxide; and strontium titanate. When content of the Zn oxide is assumed to be 100 mole portion in terms of Zn, content of the Co oxide is 0.30 to 10 mole portion in terms of Co, content of the R oxide is 0.10 to 10 mole portion in terms of R, content of the Cr oxide is 0.01 to 2 mole portion in terms of Cr, content of the M1 oxide is 0.10 to 5 mole portion in terms of M1, content of the M2 oxide is 0.0005 to 5 mole portion in terms of M2, and content of the strontium titanate is 0.10 to 5 mole portion in terms of SrTiO3.