Abstract: A shunt resistor includes a resistive body and a pair of electrodes each bonded to the resistive body. The resistive body has an obverse surface and a reverse surface that face in mutually opposite directions. The two electrodes are separate from each other in a first direction perpendicular to the thickness direction of the resistive body. The resistive body has two ends separate from each other in the first direction. The obverse surface of the resistive body includes a pair of intentionally curved portions that are located at the two ends of the resistive body.

Abstract: A resistor includes a resistive element, a protective film, and a pair of electrodes. The resistive element is made of a metal plate. The protective film is formed on the upper surface of the resistive element. The plated layers are formed to cover the electrodes. The electrodes are separated from each other with the protective film therebetween and are formed at both ends of the upper surface of the resistive element. The electrodes are formed by printing metal-containing paste.

Abstract: A ceramic electronic component that includes a ceramic element, and a coating film and external electrodes on a surface of the ceramic element. The coating film includes cationic elements from a constituent element of the ceramic element, which are ionized and deposited from the ceramic element, and a resin. The surface of the coating film is recessed relative to a surface of wrapping parts of the external electrodes on the surface of the ceramic element.

Abstract: A PTC circuit protection device, includes: two PTC units, each of the PTC units including a first insulating layer, a first electrically conductive layer, a PTC polymeric layer, a second electrically conductive layer, a second insulating layer, a first electrode, a second electrode; an insulating bridge layer interconnecting the first insulating layers of the PTC units; and first and second gaps formed between the PTC units and located at two opposite sides of the insulating bridge layer.

Abstract: A temperature adjustment control device includes a heat diffusion layer, a heat flux sensor, and a temperature changing body provided in this order from a surface making contact with a human body. The heat flux sensor is disposed on the temperature changing body and outputs a sensor signal corresponding to a heat flux. The heat diffusion layer is disposed opposite to the temperature changing body through the heat flux sensor. The heat flux sensor outputs the sensor signal corresponding to the heat flux passing through the heat flux sensor in a direction in which the heat diffusion layer, the heat flux sensor, and the temperature changing body are arranged. A control portion controls a start and a stop of the power supply to the temperature changing body based on the sensor signal outputted from the heat flux sensor.

Abstract: A resistor element includes a base substrate having first and second surfaces opposing each other; a resistor layer disposed on the first surface of the base substrate; first and second terminals disposed on opposing end portions of the base substrate, respectively, and electrically connected to opposing sides of the resistor layer, respectively; a third terminal disposed between the first terminal and the second terminal on the second surface of the base substrate and spaced apart from the first terminal and the second terminal; and electrostatic discharge (ESD)-preventing members connecting the first terminal and the third terminal to each other and connecting the second terminal and the third terminal to each other.

Abstract: A chip resistor includes a base member, a resistive element formed on the base member, a first inner electrode held in contact with a first end portion of the resistive element, a second inner electrode held in contact with a second end portion of the resistive element, a first reverse surface electrode reaching a first end portion of the base member, and a second reverse surface electrode reaching a second end portion of the base member. The length of the first and the second reverse surface electrodes is in a range of 2/10 to 3/10 of the length of the base member. Also, the length of the first and the second reverse surface electrodes is greater than the length of the first and the second inner electrodes.

Abstract: A process for producing a multilayer varistor (MLV) if remained its size unchanged as prior arts is favorable to outstandingly increase overall current-carrying area and improve the performance of final produced MLV; and the MLV has laminated a lower cap, an inner-electrode stack formed from piling up several inner-electrode gaps (g), and an upper cap into a unity, and at least satisfies the condition that the lower cap and the upper cap has a thickness smaller than a thickness of the inner-electrode gap (g), but equal to or greater than 0.1 times of the thickness of the inner-electrode gap (g).

Abstract: A resistor includes a first resistor element. The first resistor element is connected to at least a first electrical terminal and a second electrical terminal. The first resistor element is configured to directly contact cooling media on at least two surfaces of the first resistor element in order to transfer heat away from the first resistor element. The resistor may also include a second resistor element connected to at least the first electrical terminal and the second electrical terminal, where the second resistor element is configured to directly contact the cooling media on at least two surfaces of the second resistor element in order to transfer heat away from the second resistor element.

Abstract: A metal resistance strain gage with a high gage factor is provided. The electrical resistance strain gage includes a strain sensitive metallic element and has a chemical composition on a weight basis of approximately 63% to 84% Ni and approximately 16% to 37% Fe and a gage factor greater than 5.

Abstract: The present technology is directed toward a resistor and method of manufacturing the resistor. One or more layers of insulative material are formed on a length of resistive material. Portions of the one or more layers insulative material are removed from the resistive material in a pattern based on a predetermined approximate dimension and predetermined approximate resistance value. A first set of one or more conductive layers are formed on the portions of the resistive material exposed by the insulative coating to form a plurality of conductive pads on the resistive material between the patterned insulative material. The sets of conductive pads are probed to measure a preliminary resistance value between the sets of conductive pads.

Abstract: A shunt resistor according to the present invention includes a pair of electrode plates spaced apart from each other in a plate surface direction and a resistive alloy plate that connects the pair of electrode plates and that has a predetermined set resistance value. A surface of the resistive alloy plate is provided with a visually recognizable character string pattern that is formed by laser processing and that indicates the set resistance value of the resistive alloy plate, and a surface area and a carving depth of the character string pattern are set in such a manner that the resistive alloy plate has the set resistance value.

Abstract: A switch comprising an interior cavity and a switching element movably disposed within the interior cavity to define a first position and a second position, the second position being different from the first position. A biasing element imparts a biasing force to the switching element to place the switching element in either the first or the second position until an external force imparted to the switching element exceeds the biasing force, thereby causing the switching element to move to the other one of the first or the second position. A biasing force-adjusting element is cooperatively engaged with the biasing element, wherein a magnitude of the biasing force is adjustable using the biasing force-adjusting element. An electrically-conductive contact, coupled to the switching element, defines a first switching state when the switching element is in the first position and a second switching state when the switching element is in the second position.

Abstract: A method for fabricating a varistor device is presented. In an embodiment the method includes providing a base body for the varistor device, wherein the base body comprises a ceramic material, providing a basic material for a base metal electrode region on the base body, exposing the base body with the basic material to a temperature under a protective gas atmosphere such that the base metal electrode region is formed and firmly connected to the base body and completing the varistor device.

Abstract: A low-ohmic chip resistor with high conductivity is fabricated. The chip resistor has an electrode of a base metal or base-metal alloy. The base-metal or base-metal-alloy electrode and a resistor layer are fabricated through thick-film printing with sintering at a low temperature in the air. Therein, a thick-film paste made of a cheap low-reduction-potential metal (such as aluminum (Al) or nickel (Ni)) is formed through screen-printing and sintering. Then, the layer of the cheap low-reduction-potential metal is used as a sacrificial layer to be immersed in a metal solution having a high reduction potential. Therein, a wet chemical alternation reaction is processed for obtaining a metal electrode having the high reduction potential. Or, the sacrificial layer may be immersed in a mixed solution of several different metal having high reduction potential to process wet chemical alternation reaction for obtaining an alloy of metal mixed with different composition.

Abstract: A metal strip resistor is provided. The metal strip resistor includes a metal strip forming a resistive element and providing support for the metal strip resistor without use of a separate substrate. There are first and second opposite terminations overlaying the metal strip. There is plating on each of the first and second opposite terminations. There is also an insulating material overlaying the metal strip between the first and second opposite terminations. A method for forming a metal strip resistor wherein a metal strip provides support for the metal strip resistor without use of a separate substrate is provided. The method includes coating an insulative material to the metal strip, applying a lithographic process to form a conductive pattern overlaying the resistive material wherein the conductive pattern includes first and second opposite terminations, electroplating the conductive pattern, and adjusting resistance of the metal strip.

Abstract: A rotary variable resistor includes an insulating substrate, a resistor pattern and a current collector pattern that are provided on the insulating substrate, a rotor that is mounted on the insulating substrate in a rotatable manner, and a slider that is mounted on the rotor and makes sliding contact with the resistor pattern and the current collector pattern to cause the resistor pattern and the current collector pattern to be conducted to each other. When a maximum dimension of the resistor pattern, which defines a variable resistor, is Z [mm] and electric linearity is L [%], Z?4.0 and Z×L<10 are satisfied.

Abstract: An electrical switching apparatus includes a body and a display apparatus. The body has a housing, a handle partially extending through the housing, separable contacts located within the housing, an operating mechanism structured to open and close the separable contacts, a main printed circuit board located within the housing, and a number of electrical rating settings associated with the main printed circuit board. Each of the number of electrical rating settings has a magnitude. The display apparatus is electrically connected to the main printed circuit board and is structured to display the magnitude of at least one of the number of electrical rating settings.

Abstract: A chip resistor includes: a resistor body having a front surface and a mounting surface which face in opposite directions; a pair of electrodes which are disposed on both sides of the resistor body with the resistor body sandwiched therebetween and are in electrical conduction with the resistor body; and a protective film covering a portion of the resistor body, wherein a plurality of grooves, which does not penetrate through the resistor body, is formed in the front surface of the resistor body.

Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: CrxAlyNz (0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using a Cr—Al alloy sputtering target.