Abstract: A PTC device comprises a laminated substrate, a first PTC material layer, a second PTC material layer, a first metal layer and a second metal layer. The laminated substrate comprises a first conductive layer, a second conductive layer and an insulating layer laminated between the first and second conductive layers. The first PTC material layer is disposed on the first conductive layer, and the second PTC material layer is disposed on the second conductive layer. The first metal layer is disposed on the first PTC material layer, and the second metal layer is disposed on the second PTC material layer. The insulating layer has a through hole filled with PTC material to form a PTC connecting member of which one end connects to the first PTC material layer and another end connects to the second PTC material layer.

Abstract: A thin film resistor element is provided with a tantalum nitride (TaN) layer on an upper surface of a substrate, a tantalum pentoxide (Ta2O5) layer disposed on the tantalum nitride layer, and two electrode layers separately disposed on the tantalum pentoxide layer or on both ends of the tantalum nitride layer and the tantalum pentoxide layer. The thin film resistor element of the present invention can reduce the oxidation rate of the resistor layer to maintain a constant resistance value at high temperatures generated during use.

Abstract: An object is to provide a method for manufacturing a resistor capable of suppressing variations in the thickness of a thermally conductive layer interposed between a resistive body and electrode plates. The method for manufacturing a resistor according to the present invention includes a step of forming an unhardened thermally conductive layer on a surface of a resistive body, a step of bringing the thermally conductive layer into a semi-hardened state, and a step of bending electrode plates respectively disposed at both sides of the resistive body, further hardening the thermally conductive layer, and performing adhesion between the resistive body and the electrode plates via the thermally conductive layer.

Abstract: A force sensing resistor (FSR) that is constructed with a first substrate made of polyimide disposed underneath a second substrate that is resistive and flexible. A handheld controller for an electronic system may include the FSR having a first substrate made of polyimide. The FSR may be mounted on a planar surface of a structure within the controller body, such as a structure mounted within a handle of the controller body, and/or a structure that is mounted underneath at least one thumb-operated control that is included on a head of the controller body. The FSR may be configured to measure a resistance value that corresponds to an amount of force applied to an outer surface of the handle and/or an amount of force applied to the at least one thumb-operated control.

Abstract: A ceramic member comprising a compound oxide of La, E and Mn, wherein AE is (i) Ca, or (ii) contains Ca and at least one of Sr and Ba with a total amount of Sr and Ba to a total of Ca, Sr and Ba of not more than 5 mol %, and a crystal system in a surface of the ceramic member is a monoclinic system.

Abstract: Disclosed is a sensor for detecting temperature of an aircraft. The sensor comprises a temperature sensor elongated with respect to an axis. The temperature sensor comprises a sheath elongated with respect to the axis. The temperature sensor comprises a central conductor disposed within the sheath and elongated with respect to the axis having a conductor material defining a conductor temperature coefficient having a conductor coefficient magnitude. The temperature sensor comprises an optical fiber disposed within the sheath. The temperature sensor comprises a thermistor disposed within the sheath and surrounding the central conductor, the thermistor having thermistor material defining a thermistor temperature coefficient defining a thermistor coefficient magnitude greater than the conductor coefficient magnitude.

Abstract: A power resistor comprises a tubular housing composed of metal and a resistor element received therein, wherein the housing has four side walls that extend along a longitudinal axis of the housing between two ends and define a rectangular cross-section. The housing comprises four edges of the four side walls at at least one of the two ends. Two of the four side walls have a respective incision at their edges for introducing a fastening element and the two other side walls have a respective clearance in alignment with the oppositely disposed incision to facilitate a placement of a tool at a fastening element introduced into the respective incision.

Abstract: A thermistor element includes an element body made of ceramic and including first and second end surfaces opposite to each other and a peripheral surface located between the first end surface and the second end surface, first and second external electrodes respectively covering the first and second end surfaces and portion of the peripheral surface adjacent to the respective first and second end surfaces. The first and second external electrodes include electrode layers including an underlayer and a metal plating layer, the underlayer of the first external electrode includes, adjacent to or in a vicinity of the second external electrode, two second external electrode side corner portions that are thin and adjacent to each other, and the underlayer of the second external electrode includes, adjacent to or in a vicinity of the first external electrode, two first external electrode side corner portions that are thin and adjacent to each other.

Abstract: The heat generating apparatus according to the present invention includes: a positive temperature coefficient thermistor heat generating element including an electrode layer; a first electrode terminal; a second electrode terminal; a holder configured to house the positive temperature coefficient thermistor heat generating element; and a heat conductive sheet, in which the heat conductive sheet includes a graphite particle and a polymer compound, a major axis direction of the graphite particle is substantially orthogonal to the surface of the positive temperature coefficient thermistor heat generating element, and the positive temperature coefficient thermistor heat generating element and the holder are assembled in a state in which they are biased so as to apply pressure to the heat conductive sheet.

Abstract: A magnetoresistor device includes a magnetoresistor, a protection layer, a first conductive structure, and a second conductive structure. The magnetoresistor is disposed over a substrate. The protection layer is formed over a portion of the magnetoresistor. The first conductive structure is disposed over the protection layer and includes a lower barrier layer and a metal layer disposed over the lower barrier layer. The second conductive structure is disposed over the substrate and partially covers the magnetoresistor. The second conductive structure includes the lower barrier layer and the metal layer disposed over the lower barrier layer.

Abstract: An object of the present disclosure is to provide a chip resistor that reduces a possibility of occurrence of a mounting failure. The chip resistor of the present disclosure includes: insulating substrate; a pair of first upper-face electrodes that is provided at both end portions of an upper face of insulating substrate; and resistor that is provided on the upper face of insulating substrate and is formed between the pair of first upper-face electrodes. The chip resistor also includes: a pair of second upper-face electrodes that is formed on upper faces of the pair of first upper-face electrodes and is connected to resistor; and protective film that is provided to cover exposed resistor and part of the pair of second upper-face electrodes.

Abstract: A varistor includes a substrate; first and second electrodes disposed on an upper side and a lower side of the substrate, respectively; a core varistor body surrounded by the substrate and disposed between the first and second electrodes; first and second terminals having at least portions disposed on one side and the other side of the substrate, respectively, and electrically connected to the first and second electrodes, respectively; and a cover varistor body covering the core varistor body and disposed in a level higher than an upper surface of the substrate or disposed in a level lower than a lower surface of the substrate.

Abstract: A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.

Abstract: A method includes blending a dielectric material including a titanate with a carbon-based ink to form a modified carbon-based ink. The method also includes printing the modified carbon-based ink onto a structure. The method further includes curing the printed modified carbon-based ink on the structure at a temperature that does not exceed about 250° C. In addition, the method includes processing the cured printed modified carbon-based ink to form a thick film resistor. An amount of the dielectric material blended with the carbon-based ink does not exceed about 15% by weight of the modified carbon-based ink. The modified carbon-based ink has a resistivity that is at least double a resistivity of the carbon-based ink. The thick film resistor may be configured to handle up to about 200 mA of current without fusing and/or handle up to about 1.0 W of power without fusing.

Abstract: A chip resistor includes an upper electrode provided on a substrate, a resistor element connected to the upper electrode, and a side electrode connected to the upper electrode. The side electrode, arranged on a side surface of the substrate, has two portions overlapping with the obverse surface and reverse surface of the substrate, respectively. An intermediate electrode covers the side electrode, and an external electrode covers the intermediate electrode. A first protective layer is disposed between the upper electrode and the intermediate electrode, and held in contact with the upper electrode and the side electrode. The first protective layer is more resistant to sulfurization than the upper electrode. A second protective layer is disposed between the first protective layer and intermediate electrode, and held in contact with the first protective layer, side electrode and intermediate electrode.

Abstract: A ruthenium oxide powder having a rutile crystal structure is provided, wherein a crystallite diameter D1, calculated from a peak of a (110) plane measured by an X-ray diffraction method, is 25 nm or more and 80 nm or less, a specific surface area diameter D2, calculated from a specific surface area, is 25 nm or more and 114 nm or less, and a ratio of the crystallite diameter D1 (nm) to the specific surface area diameter D2 (nm) satisfies a following formula (1). 0.70?D1/D2?1.

Abstract: Device structures and fabrication methods for an on-chip resistor. A dielectric layer includes a trench with a bottom and a sidewall arranged to surround the bottom. A metal layer is disposed on the dielectric layer at the sidewall of the trench. The metal layer includes a surface that terminates the metal layer at the bottom of the trench to define a discontinuity that extends along a length of the trench.

Abstract: A compact and refined chip resistor, with which a plurality of types of required resistance values can be accommodated readily with the same design structure, was desired. The chip resistor is arranged to have a resistor network on a substrate. The resistor network includes a plurality of resistor bodies arrayed in a matrix and having an equal resistance value. A plurality of types of resistance units are respectively arranged by one or a plurality of the resistor bodies being connected electrically. The plurality of types of resistance units are connected in a predetermined mode using connection conductor films and fuse films. By selectively fusing a fuse film, a resistance unit can be electrically incorporated into the resistor network or electrically separated from the resistor network to make the resistance value of the resistor network the required resistance value.

Abstract: Herein disclosed is a voltage dividing resistor comprising a resistance bar and a plurality of dividing connectors. The resistance bar has a first end and a second end and provides a first current path, which stretches from the first end to the second end along the resistance bar. The distance between the first end and the second end is less than the length of the first current path. The first and second ends are configured to be electrically connected to a power source. The dividing connectors are electrically connected to different locations on the first current path. Each of the dividing connectors has a contact pad. The resistance bar is not coplanar with the contact pads. A divided voltage is obtained from a pair of dividing connectors chosen from the plurality of dividing connectors.

Abstract: A PTC thermistor element for a tempering device may include a main body, which may have a positive temperature coefficient. The main body may have PTC thermistor components, a core, and ceramics components at least in the core. The PTC thermistor components may have a positive temperature coefficient, and the ceramics components may have a thermal conductivity of at least 2.5 W/mK. The ceramics components may be disposed in a distributed manner.