Abstract: In an embodiment a sensor element includes at least one carrier having a top side and a bottom side, the top side being electrically insulating, at least one functional layer including a material with a temperature-dependent electrical resistance, the functional layer being arranged on the carrier, at least two electrodes arranged on the carrier at a distance from one another and at least two contact pads configured for electrically contacting the sensor element, wherein a respective contact pad is arranged directly on a partial region of one of the electrodes, wherein the sensor element is configured to measure a temperature, and wherein the sensor element is configured for direct integration into an electrical system as a discrete component.

Abstract: To provide a thick film resistor paste for a resistor having a smaller resistance change rate and excellent surge resistance, a thick film resistor using the thick film resistor paste, and an electronic component provided with the thick film resistor. A thick film resistor paste comprises a lead-ruthenate-containing glass powder and an organic vehicle, the lead-ruthenate-containing glass powder comprises 10 to 70 mass % of lead ruthenate, a glass composition of the lead-ruthenate-containing glass powder comprises 3 to 30 mass % of silicon oxide, 30 to 90 mass % of lead oxide. 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heat dissipating structures and methods of manufacture. The structure includes: a thin film resistor within a back end of the line structure; and a heat dissipating structure below the thin film resistor, the heat dissipating structure includes a top plate with a slotted configuration and being within the back end of the line structure.

Abstract: A method for manufacturing a multilayer varistor includes: a first step including providing a multilayer stack in which a plurality of green sheet layers, each containing a Zn oxide powder as a main component and a Pr oxide powder as a sub-component, and a plurality of internal electrode paste layers, each containing a Pd powder, are alternately stacked; and a second step including forming a sintered compact, including an internal electrode inside, by baking the multilayer stack. The second step includes: a first sub-step including baking the multilayer stack by setting an oxygen concentration in an atmosphere at 1000 ppm by volume or less while increasing a temperature from 500° C. to 800° C.; and a second sub-step including baking, after the first sub-step, the multilayer stack by setting the oxygen concentration in the atmosphere at 1000 ppm by volume or more while increasing the temperature to a maximum allowable temperature.

Abstract: A sensor device according to the present invention includes: a sensor element including a temperature-sensitive resistor; and a protective cover that protects the sensor element, wherein the sensor element has a shape extending long along one direction, and the protective cover surrounds a periphery of the sensor element with a plurality of support pillars extending obliquely with respect to a longitudinal direction of the sensor element. It is preferable that the plurality of support pillars intersect in a lattice-like manner.

Abstract: A protection adapter for the overvoltage protection of an electrical operating device in a high-voltage line. The protection adapter has a first adapter interface for electrically conductively coupling to an open-air interface of the high-voltage line, a second adapter interface for electrically conductively coupling to an operating-means interface of an electrical operating device, a connecting line for electrically conductively coupling the first adapter interface and the second adapter interface, and an electrically insulating insulation sheath which surrounds at least the connecting line. The protection adapter has a characteristic impedance for reducing electrical surges from the high-voltage line. There is also described a system with a high-voltage line, an electrical operating device, and a protection adapter.

Abstract: An over-voltage circuit protection device includes a voltage-dependent resistor component, and a printed circuit board (PCB) component connected to the voltage-dependent resistor component through first and second conductive lead layers. The PCB component includes a PCB body, a first conductive portion, a second conductive portion, at least one first conductive via and at least one second conductive via. The first and second conductive portions are disposed on the PCB body, and are electrically insulated from each other. The first and second conductive vias extend through the PCB body, and are defined by via-defining walls respectively covered by the first and second conductive portions.

Abstract: Systems for disconnecting a surge arrester. One embodiment provides a surge arrester comprising a housing, a connecting interface configured to connect to an electrical power grid, and a disconnector device coupled to the connecting interface. A metal oxide varistor stack is coupled to the disconnector device, and a ground side connection is coupled to the metal oxide varistor stack, the ground side connection configured to connect to a system ground. The disconnector device is configured to disconnect the connecting interface from the system ground based on a predetermined disconnection condition.

Abstract: A thermistor cable is formed from a tubing and a plurality of thermistor conductors bundled within the tubing, wherein each thermistor conductor forms a junction with a shared thermistor conductor to form a thermistor junction, and each thermistor junction is attached to a support cable in a thermistor bundle. The cable is formed by pulling the thermistor bundle into the tubing.

Abstract: The present invention relates to a shunt resistor for current detection. The shunt resistor (1) includes: a resistance element (5) having a plate shape; and electrodes (6, 7) connected to both end surfaces (5a, 5b) of the resistance element (5), wherein the electrodes (6, 7) have cut portions (11, 12), respectively, the cut portions (11, 12) extending parallel to joint portions (8, 9) of the resistance element (5) and the electrodes (6, 7), and each of the cut portions (11, 12) is located at a position where a relationship Y?0.80X-1.36 holds, where Y is a distance from each joint portion (6, 7) to each cut portion (11, 12), and X is a length of the joint portions (6, 7) in a width direction of the electrodes (6, 7).

Abstract: A power contactor including: a fixed part; a movable part able to come into contact with the fixed part and to move between an open position and a closed position of the contactor, the movable part including at least one power contact; an auxiliary contact and a pyrotechnic actuator, the auxiliary contact and the pyrotechnic actuator being placed in parallel with the power contact, and the pyrotechnic actuator being configured to be triggered during a levitation of the contactor in such a way as to move the contactor into the open position; and a motor configured to actuate the movable part and to put it in contact with the fixed part characterized in that the power contact and the auxiliary contact are desynchronized in such a way that when the contactor is closed, the power contact comes into contact with the fixed part before the auxiliary contact.

Abstract: To provide a thick film resistor paste for a resistor having no abnormalities of cracks in appearance and sufficient surge resistance, especially for low resistance, while using lead borosilicate glass, a thick film resistor using the thick film resistor paste, and an electronic component provided with the thick film resistor. A thick film resistor paste comprises a ruthenium-oxide-containing glass powder and an organic vehicle, the ruthenium-oxide-containing glass powder comprises 10 to 60 mass % of ruthenium oxide, a glass composition of the ruthenium-oxide-containing glass powder comprises 60 mass % or less of silicon oxide, 30 to 90 mass % of lead oxide, 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

Abstract: A shunt resistor (1) includes: a resistance element (3); a first electrode (5A) and a second electrode (5B) coupled to both sides of the resistance element (3); a first fusion material (6A) and a second fusion material (6B) electrically coupled to the first electrode (5A) and the second electrode (5B), respectively, the first fusion material (5A) and the second fusion material (5B) haying electric conductivity; and at least one board (10) coupled to the first electrode (5A) and the second electrode 15B) by the first fusion material (6A) and the second fusion material (6B). The first fusion material (6A) is arranged in a first through-hole (7A) formed in the first electrode (5A) or the board (10), and the second fusion material (6B) is arranged it as second through-hole (7B) formed in the second electrode (5B) or the board (10).

Abstract: A resistor is provided with a resistance body and a pair of electrodes connected to the resistance body (a first electrode body, a second electrode body), the resistance body being arranged so as to be at least separated away from a substrate board (a circuit board) when mounted on the substrate board (the circuit board), wherein the resistor has the oxide film on at least one of the resistance body and each of the electrodes (the first electrode body, the second electrode body) at a boundary portion (a bonded portion, a bonded portion) between the resistance body and each of the electrodes (the first electrode body, the second electrode body) on the mounting surface of the resistor.

Abstract: A variable resistor includes: a first substrate having a first main surface; a resistor disposed on the first main surface; a first wiring pattern disposed on the first main surface and connected to the resistor; a spacer having an opening; a second substrate that: has second and third main surfaces, and is disposed on the first substrate via the spacer such that the second main surface is opposed to the first main surface; a connecting body that is: disposed on the second main surface such that the connecting body is disposed in the opening, and configured to electrically connect to the resistor by pushing of a pusher from the third main surface; and a second wiring pattern. A resistance value between the first wiring pattern and the second wiring pattern is changed based on a pushing position of the pusher.

Abstract: A manufacturing method of a resistor contains: a step of forming a resistor base material by stacking an electrode material, a resistive material, and an electrode material in this order and by bonding the electrode material, the resistive material, and the electrode material by applying pressure in the stacked direction; a step of passing the resistor base material through a die, the die being formed with an opening portion having a dimension smaller than an outer dimension of the resistor base material; and a step of obtaining an individual resistor from the resistor base material passed through the die.

Abstract: A current sensing device including: an insulating resin substrate; a current sensing element arranged in the resin substrate; a current wire provided via an insulating layer with respect to the current sensing element to flow a current through the current sensing element; a plurality of current vias connecting the current sensing element and the current wire through the insulating layer; and a voltage sensing via connected to the current sensing element to measure a voltage drop.

Abstract: A microelectronic device includes a resistive differential alignment monitor (RDAM), including a first variable-width resistor and a second variable-width resistor, which are members of a conductor level. Each of the resistors include a wide portion and a narrow portion. The RDAM further includes a vertical connector to each of the wide portion and the narrow portion of the first variable-width resistor, and to the wide portion and the narrow portion of the second variable-width resistor. The vertical connectors are members of a vertical connector level. Test terminals are coupled to the vertical connectors. The vertical connectors to the first variable-width resistor and the vertical connectors to the second variable-width resistor are separated by equal distances and are oriented anti-parallel to each other. The RDAM may be used to estimate a misalignment distance between the members of the vertical connector level and the members of the conductor level.

Abstract: A multilayer varistor has a stack structure including a plurality of layers stacked in a third direction. The multilayer varistor includes a first internal electrode electrically connected to a first external electrode, a second internal electrode electrically connected to the second external electrode, and a third internal electrode electrically connected to the third external electrode. The first internal electrode is disposed between the second internal electrode and the third internal electrode in the third direction.

Abstract: A sensor assembly, a force detection device and method, and construction machinery, the sensor assembly comprising a connecting part used for connecting a base to be tested and a bearing part used for bearing, the bearing part being connected to the connecting part, the bearing part comprising at least two sensing units with different measuring ranges, and the at least two sensing units being arranged to have a different initial gap (b1, b2) from the connecting part, so that corresponding initial gap (b1, b2) are eliminated when a load applied to the bearing part reaches different extents. The different initial gaps (b1, b2) are eliminated by means of the load reaching a different extent, so that the sensing units with different measuring ranges can provide detection feedback in the respective working conditions in which the units have the highest measurement precision and thereby ensure the accuracy of detection results.