Abstract: A current sense resistor and a method of manufacturing a current sensing resistor with temperature coefficient of resistance (TCR) compensation are disclosed. The resistor has a resistive strip disposed between two conductive strips. A pair of main terminals and a pair of voltage sense terminals are formed in the conductive strips. A pair of rough TCR calibration slots is located between the main terminals and the voltage sense terminals, each of the rough TCR calibration slots have a depth selected to obtain a negative starting TCR value observed at the voltage sense terminals. A fine TCR calibration slot is formed between the pair of voltage sense terminals.

Abstract: Particularly, it is an object to provide a circuit substrate that can reduce a field intensity near an electrode having a high potential. A circuit substrate of the present invention includes an insulated substrate, a thin-film resistive element, and electrodes electrically connected to both sides of the thin-film resistive element, the thin-film resistive element and the electrodes being disposed on a surface of the insulated substrate. The circuit substrate is characterized in that the thin-film resistive element has a pattern in which a resistance wire is repeatedly folded back, and a dummy wire for reducing a field intensity is provided on a high-potential electrode side.

Abstract: A plurality of resistors are disclosed herein. The resistor may include one or more resistive elements and a plurality of conductive portions. Openings or slots, which can be configured to adjust temperature coefficient or resistance (TCR) values of the resistor, are formed in the resistive elements. The shape, quantity, and orientation of the openings or slots can vary. In one aspect, header assemblies are provided for securing or holding pins relative to the resistors.

Abstract: A thermistor includes a thermistor element, a protective film formed on the surface of the thermistor element, and electrode portions formed on both end portions of the thermistor element, in which the protective film is formed of silicon oxide, and, as a result of observing a bonding interface between the thermistor element and the protective film, a ratio L/L0 of a length L of an observed peeled portion to a length L0 of the bonding interface in an observation field is 0.16 or less.

Abstract: An integrated circuit includes; a substrate including a single active region, a first active resistor formed on the substrate, and a transistor including a first junction area in the single active region. The first active resistor and the transistor are electrically connected through the first junction area. The first active resistor is formed between a first node and a second node included in the first junction area. The first node is connected to a first contact, and the second node is connected to a second contact.

Abstract: One aspect is a resistor component for surface mounting on a printed circuit board, including a ceramic substrate with a first side and an opposite second side. A sinterable metallization is at least in some regions arranged on the second side. A resistance element comprising a metal layer is arranged at least in some regions on the first side of the ceramic substrate with a first connection and a second connection. An insulation layer is arranged at least in some regions on the resistance element and the ceramic substrate. A first region on the first connection and a second region on the second connection remain uncovered by the insulation layer. A first contact pad electrically contacts the first connection via the first region, and a second contact pad electrically contacts the second connection via the second region.

Abstract: Provided is a varistor assembly capable of achieving good surge breakdown voltage while suppressing capacitance. The varistor assembly is obtained by connecting a plurality of varistor elements in parallel. Each varistor element includes: a sintered body obtained by sintering a laminate in which varistor layers and internal electrodes are alternately laminated; and a pair of external electrodes provided in a state where the internal electrodes are alternately connected on at least both end faces of this sintered body. Varistor element includes at least a plurality of first group varistor elements in which a value obtained by dividing a surface area of the sintered body by a volume of the sintered body is 1.9 mm?1 or more.

Abstract: Aspects of the disclosure relate to apparatus and methods for producing a downhole electrical component, having steps of providing a non-conductive polymer substrate, establishing an active area on the non-conductive polymer substrate, patterning the active area on the non-conductive polymer substrate with a conductive material through an additive manufacturing process and incorporating the patterned non-conductive polymer substrate into a final arrangement.

Abstract: Provided is a thermistor which has a smaller change in resistance value between before and after a heat resistance test and from which a high B constant is obtained, a method for manufacturing the same, and a thermistor sensor. The thermistor is a thermistor formed on a substrate and includes: an intermediate stacked portion formed on the substrate; and a main metal nitride film layer formed of a thermistor material of a metal nitride on the intermediate stacked portion, wherein the intermediate stacked portion includes a base thermistor layer formed of a thermistor material of a metal nitride and an intermediate oxynitride layer formed on the base thermistor layer, the main metal nitride film layer is formed on the intermediate oxynitride layer, and the intermediate oxynitride layer is a metal oxynitride layer formed through oxidation of the thermistor material of the base thermistor layer immediately below the intermediate oxynitride layer.

Abstract: An ignition resistor includes an ignition structure, an insulation substrate, a carrying base, and first and second conductor layers. The ignition structure includes an ignition portion, and first and second electrode portions respectively connected to two opposite ends of the ignition portion. The insulation substrate is disposed on the ignition structure and includes a filling portion including a hole exposing the ignition portion and configured to accommodate an ignition material, and a sidewall surrounding the hole. The carrying base is disposed under the ignition structure. The carrying base includes first and second electrodes respectively corresponding to the first and second electrode portions. The first and second electrodes and the ignition structure are located on two opposite sides of the carrying base. The first and second conductive layers electrically connect the first electrode portion and the first electrode, and the second electrode portion and the second electrode respectively.

Abstract: A resistor circuit, an artificial intelligence chip and a method for manufacturing the same are provided. The resistor circuit includes a stack structure. The stack structure includes resistive material layers and insulating layers stacked alternately. The resistor circuit includes at least two unit resistors electrically connected in series or parallel. The at least two unit resistors are respectively defined in the resistive material layers of different layers.

Abstract: A method is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. At least one TFR cap layer is formed, and a TFR etch defines a TFR element from the TFR film. A TFR contact etch forms TFR contact openings over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element. The TFR cap layer(s), e.g., SiN cap and/or oxide cap formed over the TFR film, may (a) provide an etch stop during the TFR contact etch and/or (b) provide a hardmask during the TFR etch, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer.

Abstract: Provided according to embodiments of the invention are varistor ceramic formulations that include zinc oxide (ZnO). In particular, varistor ceramic formulations of the invention may include dopants including an alkali metal compound, an alkaline earth compound, an oxide of boron, an oxide of aluminum, or a combination thereof. Varistor ceramic formulations may also include other metal oxides. Also provided according to embodiments of the invention are varistor ceramic materials formed by sintering a varistor ceramic formulation according to an embodiment of the invention. Further provided are varistors formed from such ceramic materials and methods of making such materials.

Abstract: A strain gauge includes a flexible substrate; and resistors each formed of a Cr composite film. The resistors include a first resistor and a second resistor that are formed on one side of the substrate, and include a third resistor and a fourth resistor that are formed on another side of the substrate. The first resistor, the second resistor, the third resistor, and the fourth resistor constitute a Wheatstone bridge circuit.

Abstract: A co-continuous mouldable polymeric composite with PTC effect has a matrix that comprises at least two immiscible polymers (HDPE, POM), and an electrically conductive filler (CB) in the matrix. At least one of said immiscible polymers is high-density polyethylene (HDPE), and at least one other of said immiscible polymers is polyoxymethylene (POM).

Abstract: A resistive material for sensing current contains particles having an electrically insulating property and a metal body having a three-dimensional network enclosing the particles, and a ratio of the metal body to the whole of the resistive material is 30 vol % or more and 80 vol % or less.

Abstract: A sensor for measuring a parameter at a measurement point of a surface by means of direct contact. The sensor includes a sensor element arranged movably in the sensor and a spring element that can resiliently absorb an application force with which sensor element is pressed against the measurement point.

Abstract: A manufacturing method of shunt resistor according to the present invention includes a step of calculating a difference between an initial resistance value and a desired resistance value as a resistance value to be adjusted, a step of providing a plurality of recess forming members capable of forming recesses each having a characteristic size in the surface of a resistive alloy plate, a recess determining step of determining the size and the number of the recesses necessary to be formed at the surface of the resistive alloy plate, and a recess forming step of forming the recesses according to the size and the number determined in the recess determining step by using the corresponding recess forming members.

Abstract: The present disclosure relates to a method for manufacturing an apparatus for determining and/or monitoring temperature of a medium comprising method steps as follows: arranging a sensor element in a sensor head, producing a vacuum in an internal volume of the sensor head, introducing at least one fill material into at least a portion of the internal volume of the sensor head, and closing the sensor head. The present invention relates, moreover, to a correspondingly manufactured apparatus.

Abstract: A heat utilizing device is provided in which the thermal resistance of the wiring layer is increased while an increase in electric resistance of the wiring layer is limited. Heat utilizing device has thermistor whose electric resistance changes depending on temperature; and wiring layer that is connected to thermistor. A mean free path of phonons in wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of wiring layer.