Abstract: In testing thin-film magnetic heads, first, a back surface opposite to a medium facing surface of each of a plurality of thin-film magnetic heads is attached to a first surface of a first plate of a jig, the jig including the first plate of rubber having the first and second surfaces facing toward opposite directions, and a second plate greater in rigidity than the first plate and bonded to the second surface of the first plate. Next, the plurality of thin-film magnetic heads and the jig are mounted on a metal plate having a flat top surface, such that the medium facing surfaces of the thin-film magnetic heads touch the top surface of the metal plate. Next, heat-generating components of the plurality of thin-film magnetic heads mounted on the metal plate are energized.

Abstract: The device includes two supports and a primary conductive strip. The primary conductive strip includes a neutral surface, a first side, and a second side. The primary conductive strip is connected one of directly and indirectly on the first side to the two supports such that the primary conductive strip is constrained in two dimensions and movable in one dimension. The device also includes a primary distributed feedback fiber laser. The primary distributed feedback fiber laser includes a fiber axis. The primary distributed feedback fiber laser is connected to the primary conductive strip along one of the first side and the second side such that there is a positive distance between the neutral surface of the primary conductive strip and the fiber axis of the primary distributed feedback fiber laser.

Abstract: An apparatus for determining a resonant frequency of a wind turbine tower is provided. The apparatus includes a processing unit configured to receive an acceleration measurement value, the acceleration measurement value representative of the acceleration of the wind turbine tower in the direction parallel to a rotor rotational axis of the wind turbine and/or in the direction perpendicular to both the rotor rotational axis and the tower axis of the wind turbine. The apparatus includes a memory configured to store a series of acceleration measurement values, and the processing unit includes a Fourier transform module configured to calculate a spectral vector based on calculating a convolution-based fast Fourier transform of the series of acceleration measurement values, and includes a resonant frequency calculation module configured to calculate the tower resonant frequency based on the calculated spectral vector.

Abstract: The evaluation method of a separator for a nonaqueous electrolyte battery according to the present invention includes: placing opposite an upper jig 21 serving also as a conductive electrode and a lower jig 23 serving also as a conductive electrode in both sides of the separator sample 22; and measuring the relationship between an applied voltage and a passed current between the upper jig 21 and the lower jig 23 while applying a pressure to between the upper jig 21 and the lower jig 23 to evaluate the separator. At this time, by fitting a foreign material 28 in any shape between the separator sample 22 and one of the upper jig 21 and the lower jig 23, an evaluation of the separator simulating the presence of a foreign material affecting adversely the separator can be performed.

Abstract: A position sensing assembly includes a bearing element and a helically shaped rotational member used to drive a portion of a sensor assembly, such as a Digital Rotary Magnetic Encoder. Interaction between the bearing element and a helically shaped rotational member minimizes the presence of backlash in the position sensing assembly. Accordingly, as an actuator assembly drives both a control element, such as a flight control surface, and the position sensing assembly, the sensor assembly generates an output signal that accurately reflects the position of the control element.

Abstract: A CMOS device configuration in which a complete CMOS inverter is contained in the space normally required for a single NMOS transistor of equivalent geometry. A first polysilicon layer of normal thickness and N+ doping is used for the N channel gate, and a second polysilicon layer is deposited conformally over the oxide which encapsulates the first polysilicon layer. The second polysilicon layer is thin and doped p-type. The second layer is only lightly doped initially, and is then doped more heavily by a low-energy implantation. The portions of the second poly layer which are adjacent to the sidewalls of the gate level in first poly will be shielded from the heavy implantation, and will therefore provide relatively lightly doped p-type channel regions, to form a pair of PMOS polysilicon transistors addressed by the N+ first poly gate electrode. Preferably the channel doping of these polysilicon transistors is at least 10.sup.17.

Abstract: A new and improved thin film field effect transistor has increased operating current and speed. The transistor includes a drain, an insulator, and a source formed in layers and vertically arranged with respect to a substrate and each other. The drain, however, and source layers form a plurality of non-coplanar surfaces with respect to the substrate. The device further includes a deposited semiconductor material overlying the non-coplanar surfaces to form a plurality of current conduction channels between the drain and source. A gate insulator overlies the semiconductor material, and a gate electrode overlies the gate insulator. The devices can also include carrier injection structure including a doped semiconductor material electrically coupled to the drain, the source, and the deposited semiconductor material for increasing the injection of current conduction carriers in the current conduction channels.

Abstract: A transistor is formed about a recess in the planar surface of a substrate of silicon. A pair of insulating spacers is provided in the recess, each abutting a respective side of the recess. Gate oxide is formed in the recess between the insulating spacers. A gate electrode is provided having one base overlying the gate oxide and the other base substantially coplanar with the planar surface. A source region extends from one side of the channel underlying the gate oxide to the planar surface. A drain region extends from the other side of the channel underlying the gate oxide to the planar surface.

Abstract: A dynamic random access memory cell including a storage capacitor defined by an electrode and dielectric layers on both sides of said electrode and a transistor for controlling the charge on said storage capacitor.