Abstract: Semiconductor memory devices and methods include a flash memory cell array fabricated in a well, with memory cells in the same column connected to each other in series and connected to a respective bit line. The memory devices also include a column decoder, a data register buffer unit, a row decoder, an erase control unit, and an input/output buffer unit. In one or more embodiments, the erase control unit applies voltages to the well to erase the memory cells in a manner that avoids breaking down p-n junctions formed by transistors fabricated in the well. In another embodiment, high voltage transistors are used to selectively isolate the bit lines from and couple the bit lines to a peripheral circuit in pairs so that each high voltage transistor is shared by two bit lines.

Abstract: A flash controller for managing at least one MLC non-volatile memory module and at least one SLC non-volatile memory module. The flash controller is adapted to determine if a range of addresses listed by an entry and mapped to said at least one MLC non-volatile memory module fails a data integrity test. In the event of such a failure, the controller remaps said entry to an equivalent range of addresses of said at least one SLC non-volatile memory module. The flash controller is further adapted to determine which of the blocks in the MLC and SLC non-volatile memory modules are accessed most frequently and allocating those blocks that receive frequent writes to the SLC non-volatile memory module and those blocks that receive infrequent writes to the MLC non-volatile memory module.

Abstract: A solid state drive (SSD) device includes a first nonvolatile memory package, a second nonvolatile memory package, and a controller. The first nonvolatile memory package includes a first buffer chip and a plurality of first nonvolatile memory chips. The second nonvolatile memory package includes a plurality of second nonvolatile memory chips. The controller controls the first nonvolatile memory package and the second nonvolatile memory package. The first buffer chip communicates a first address signal and a first data with the controller, and selectively communicates the first data with one of the plurality of first nonvolatile memory chips and the plurality of second nonvolatile memory chips based on the first address signal.

Abstract: The present disclosure discloses a feedback field-effect electronic device using a feedback loop operation and an array circuit using the feedback field-effect electronic device. According to one embodiment of the present disclosure, the array circuit includes a plurality of feedback field-effect electronic devices in which the source region of a diode structure and the drain region of an access electronic device are connected in series, wherein the diode structure is connected to a bit line and a first word line, the access electronic device is connected to a source line and a second word line, and a random access operation is performed by selectively applying voltage to the bit line and the first and second word lines.

Abstract: A semiconductor device constituting a decoder circuit for memory selection and having a smaller area is provided by using surrounding gate transistors (SGTs), which are vertical transistors. In a decoder circuit formed by a plurality of MOS transistors arranged in m rows and n columns, the MOS transistors that constitute the decoder circuit are arranged on a planar silicon layer formed on a substrate. Each has a structure including a drain, a gate, and a source arranged in a vertical direction, the gate surrounding a semiconductor pillar. The planar silicon layer is formed by a first active region of a first conductivity type and a second active region of a second conductivity type, and the regions are connected to each other via a conductive region formed on the surface of the planar silicon layer. Consequently, a semiconductor device that constitutes a decoder circuit having a smaller area is provided.

Abstract: Disclosed is an in-memory computing device including a memory array with non-volatile memory cells arranged in rows and columns; a multiple row decoder to activate at least two cells in a column of the memory array at the same time to generate a parametric change in a bit line connected to at least one cell in the column; and circuitry to write data associated with the parametric change into the memory array. Additionally disclosed is a method of computing inside a memory array including non-volatile memory cells arranged in rows and columns, the method includes activating at least two cells in a column of the memory array at the same time to generate a parametric change in a bit line connected to at least one cell in the column; and writing data associated with the parametric change into the memory array.

Abstract: Storage of data in a cache system is controlled by a cache monitor. A cache line is filled in response to a memory instruction from a cache client. The cache monitor includes a predictor table and update logic. An entry in the predictor table comprises an instruction identifier that associates the entry with a memory instruction and, for each cache in the system, a reuse counter. The update logic is configured to update a reuse counter table dependent upon cache behavior in response to memory instructions. Storage of data a first data address in cache in response to a memory instruction having a first instruction identifier, is dependent upon reuse counter values in an entry of the predictor table associated with first instruction identifier. Reuse counters are updated dependent upon cache behavior. A Bloom filter or other data structure may be used to associate data addresses with a memory instruction.

Abstract: Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile memory, the device operating as volatile memory when power is applied to the device, and the device storing data from the volatile memory as non-volatile memory when power to the device is interrupted.

Abstract: The present disclosure includes apparatuses and methods for in data path compute operations. An example apparatus includes an array of memory cells. Sensing circuitry is selectably coupled to the array. A plurality of shared input/output (I/O) lines provides a data path. The plurality of shared I/O lines selectably couples a first subrow of a row of the array via the sensing circuitry to a first compute component in the data path to move a first data value from the first subrow to the first compute component and a second subrow of the respective row via the sensing circuitry to a second compute component to move a second data value from the second subrow to the second compute component. An operation is performed on the first data value from the first subrow using the first compute component substantially simultaneously with movement of the second data value from the second subrow to the second compute component.

Abstract: The present disclosure relates generally to systems, methods and tools for coordinating the activities of a contractor and a user during a setup process of a building control system. In some instances, an application program for a mobile device may provide contractors and users with different user experiences when configuring a building device, where the contractor is provided with additional features and functionality.

Abstract: The present disclosure relates generally to systems, methods and tools for coordinating the activities of a contractor and a user during a setup process of a building control system. In some instances, a contractor may install a building device and then partially configure the building device. The contractor may then send an invite, such as an electronic invite, to a customer that invites the customer to complete the configuration of the installed building device.

Abstract: A memory circuit including a plurality of elementary cells distributed in a plurality of arrays, each including N columns, N being an integer greater than or equal to 2, wherein: each column of each array includes a first local bit line directly connected to each of the cells in the column; each column of each array includes a first general bit line coupled to the first local bit line of the column by a first coupling circuit; and the first general bit lines of the columns of same rank j of the different arrays, j being an integer in the range from 0 to M?1, are coupled together.

Abstract: There may be provided an electronic device, and more particularly, a semiconductor memory device and a method of operating the same. The semiconductor memory device may include a memory cell array including a plurality of memory cells. The semiconductor memory device may include an operation control signal generator configured to receive a request for performing a target operation from the controller configured to control the semiconductor memory device and to generate a synchronizing signal for performing the target operation. The semiconductor memory device may include a temperature detect circuit configured to detect temperatures of the plurality of memory cells in response to the synchronizing signal.

Abstract: A semiconductor device includes a first die connected to a first channel, the first die comprising a first memory chip; and a second die connected to a second channel, the second die comprising a second memory chip, the first and second channels being independent of each other and a storage capacity and a physical size of the second die being the same as those of the first die. The first and second dies are disposed in one package, and the package includes an interconnection circuit disposed between the first die and the second die to transfer signals between the first memory chip and the second memory chip.

Abstract: The apparatuses and methods described herein may operate to measure a voltage difference between a selected access line and a selected sense line associated with a selected cell of a plurality of memory cells of a memory array. The voltage difference may be compared with a reference voltage specified for a memory operation. A selection voltage(s) applied to the selected cell for the memory operation may be adjusted responsive to the comparison, such as to dynamically compensate for parasitic voltage drop.

Abstract: A method for managing a plurality of data blocks of a data storage device includes steps of: reading a plurality of data pages in the data blocks which having valid data; updating a plurality of access counts of the data pages in the data blocks; determining whether an access count of the data block is greater than or equal to an access count threshold, wherein the access count of the data block is selected from one of the access counts of the data pages therein; and when the determination is positive, storing data in the data block into a spare data block of the data blocks. The access count threshold is updated when an erase count of the data block is determined to be greater than or equal to an erase count threshold. A method of data management for a data storage device is also provided.

Abstract: After a predetermined period of time in a life cycle of a flash memory device, a plurality of reliability values corresponding to a plurality of reads of one or more of the plurality of memory cells are generated; each of the reads using a variation of a predetermined read level voltage. An offset voltage is then identified, offset from the read level voltage. The offset voltage corresponds to a zero crossing point in the range of the reliability values. Once the offset voltage is identified, the read level voltage is set to a calibrated voltage based on the offset voltage.

Abstract: Systems and methods for wire feed speed control are disclosed. An example welding power supply includes a control panel comprising one or more input elements, and control circuitry. The control panel is configured to receive a first input relating to a material thickness and receive a second input to place the welding power supply in a first mode of operation, wherein the first input relates to a wire diameter. The control circuitry is configured to place the welding power supply in the first mode of operation when the first input is received from the one or more input elements; determine a coarse wire feed speed when the welding power supply is in the first mode of operation; receive a third input to fine tune the coarse wire feed speed; and fine tune the coarse wire feed speed based on the received third input.

Abstract: A tunable resistive element, comprising a first terminal, a second terminal, a dielectric layer and an intercalation layer. The dielectric layer and the intercalation layer are arranged in series between the first terminal and the second terminal. The dielectric layer is configured to form conductive filaments of oxygen vacancies on application of an electric field. The intercalation layer is configured to undergo a topotactic transition comprising an oxygen intercalation in combination with a change in the resistivity of the intercalation layer. A related memory device and a related neuromorphic network comprise resistive memory elements as memory cells and synapses respectively and a corresponding design structure.

Abstract: A semiconductor device includes: first and second terminal switches connected correspondingly between the first and second terminals of a sense amplifier and corresponding first and second nodes; first and second recycle switches connected correspondingly between the first and second nodes and corresponding third and fourth nodes; and first and second capacitors connected correspondingly between the third and fourth nodes; and wherein the first and second recycle switches are configured to selectively connect the first and second capacitors correspondingly to the first and second nodes in phases including as follows: during a recovery phase in which first and second gleaned amounts of charge (first and second gleaned charges) are recovered from corresponding selected ones of bit lines; and during a reuse phase in which the first and second gleaned charges are reused from correspondingly onto selected corresponding ones of the array of bit lines.