Abstract: A method for managing an electronic circuit (2) including a thermal protection device (12) interrupting the operation of the electronic circuit when a measured temperature exceeds a predetermined threshold, includes counting the electronic circuit operation interruptions and interrupting the operation of the electronic circuit when the number of counted interruptions reaches a predetermined value and when no reset has taken place. The corresponding circuit includes: a counter (16); linking elements between the counter and the thermal protection device such that the counter can indicate the number of operation interruptions caused by the thermal protection device; and elements for resetting the counter.

Abstract: A semiconductor apparatus is provided, comprising: a power semiconductor element which is connected between a first terminal on a high-potential side and a second terminal on a low-potential side; a first gate control section which controls a gate potential of the power semiconductor element according to a control signal; a discharge circuit which is discharges charges that are charged by the gate of the power semiconductor element; a second gate control section which controls the gate potential of the power semiconductor element according to a collector current of the power semiconductor element; a feedback section which feedbacks the charges to the gate of the power semiconductor element according to the collector potential of the power semiconductor element; and a current cutting off section which cuts off currents flowing from the first terminal to the gate of the power semiconductor element according to the control signal.

Abstract: Micro-electromechanical switch (MEMS) devices can be fabricated using integrated circuit fabrication techniques and materials. Such switch devices can provide cycle life and insertion loss performance suiting for use in a broad range of applications including, for example, automated test equipment (ATE), switching for measurement instrumentation (such as a spectrum analyzer, network analyzer, or communication test system), and uses in communication systems, such as for signal processing. MEMS devices can be vulnerable to electrical over-stress, such as associated with electrostatic discharge (ESD) transient events. A solid-state clamp circuit can be incorporated in a MEMS device package to protect one or more MEMS devices from damaging overvoltage conditions. The clamp circuit can include single or multiple blocking junction structures having complementary current-voltage relationships, such as to help linearize a capacitance-to-voltage relationship presented by the clamp circuit.

Abstract: The present invention provides an overcurrent detection circuit, an overcurrent detection method, a load circuit, and a portable device. The overcurrent detection circuit comprises: a first overcurrent detection sub-circuit and a second overcurrent detection sub-circuit; wherein: the first overcurrent detection sub-circuit is configured to perform overcurrent detection for a switch circuit when a voltage of an output terminal of the switch circuit is greater than or equal to a preset threshold; and the second overcurrent detection sub-circuit is configured to perform overcurrent detection for the switch circuit when the voltage of the output terminal of the switch circuit is less than the preset threshold.

Abstract: An integrated circuit includes a voltage regulating circuit in the form of only one transistor, or a group of several transistors in parallel, that are connected between first and second terminals configured to be coupled to an antenna. A control circuit operates to make the voltage regulating circuit inactive when a pulse generated by an electrostatic discharge event appears at one of the first and second terminals, regardless of the direction of flow of the pulse between the first and second terminals. An electrostatic discharge circuit is further provided to address the electrostatic discharge event.

Abstract: A surge suppression device includes a micro electromechanical system (MEMS) switch electrically connected to a current path. Additionally, the surge suppression device includes a transient voltage suppression (TVS) device electrically connected in series to the MEMS switch. The surge suppression device is configured to protect electronic components from voltage surges or current surges.

Abstract: A method is provided for manufacturing a plurality of arresters as a composite structure. A ceramic carrier having a plurality of holes and two electrode bodies are provided. The ceramic carrier and the two electrode bodies are assembled into a base under gas atmosphere. The ceramic carrier is located between the electrode bodies. The electrode bodies are soldered to the ceramic carrier. The base body is separated into a plurality of gas-filled arresters is carried out. In addition, a gas-filled arrester is provided which has a height of maximal 2 mm and electrode surfaces of maximal 1.2×1.2 mm2.

Abstract: An autonomous adaptive arc fault detection device includes a memory for storing data of arc fault tripping events detected on a circuit over a period of time. The device also includes a processor, in communication with the memory, for determining whether a newly detected arc fault tripping event is an unwanted tripping event based on a number of times a same type of tripping event, as the newly detected arc fault tripping event, has occurred, and inhibiting interruption of the circuit if the newly detected arc fault tripping event is determined to be an unwanted tripping event. The memory can store data, such as sensed or calculated electrical characteristic parameters defining a signature of a detected arc fault tripping event as well as a number of times a stored tripping event has occurred over a period of time.

Abstract: Overvoltage arresters are used to protect against overvoltages in electrical energy transmission systems. An overvoltage arrester has a discharge column which extends along a longitudinal axis and is clamped in between end fittings by a plurality of tensile elements which radially surround the discharge column and are secured in the end fittings. At least one of the end fittings has a first thread for attaching a connecting bolt. Furthermore, the end fitting has a fitting body with a second thread for receiving a pressure screw for generating an axial force on the discharge column. Accordingly the first and second threads overlap along an axial section.

Abstract: A vehicle is provided in which separation of positively charged airflow from a positively charged surface of a vehicle body can be prevented. A vehicle body is insulated from a road surface, and positive static charges accumulate on the vehicle body during propulsion. The vehicle comprises a self-discharge device adapted to decrease a positive potential of a window pane at which positively charged airflow flowing along a vehicle surface deviates therefrom during propulsion by discharging the static electricity through the airflow to produce negative ions according to the positive potential of the window pane.

Abstract: The electronic system according to the invention comprises a set of electronic devices, each electronic device comprising a memory and a communication module for communicating with one or more other devices of the set. This electronic system comprises a module for verifying the compatibility of each device with the other complementary device(s) with which said device is adapted to communicate, and a module for generating at least one deviation indicator when an incompatibility is detected between two devices. The memory comprises a compatibility table with said other complementary device(s), each compatibility table comprising a minimum required version number for each of the other complementary devices, and each verification module is adapted for comparing a version number of each other complementary devices with the minimum required version number.

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes three or more bipolar transistors that are configured to shunt current between a first node and a second node in response to an ESD pulse received between the first and second nodes and a diode connected in series with the three or more bipolar transistors and one of the first and second nodes. Each of the three or more bipolar transistors includes a collector comprising collector components, an emitter comprising emitter components, and a base structure comprising a substrate region or an active region. The emitter components are alternately located with respect to the collector components. The substrate region or the active region surrounds the collector components and the emitter components. Other embodiments are also described.

Abstract: In the examples provided herein, an electrostatic discharge (ESD) recording circuit has a first memristive element coupled to a pin of an integrated circuit. The first memristive element switches from a first resistance to a second resistance when an ESD event occurs at the pin, and the first resistance is less than the second resistance. The ESD recording circuit also has shunting circuitry to shunt energy from an additional ESD event away from the first memristive element.

Abstract: A direct-current circuit includes: a breaker that is inserted into the direct-current line and becomes a path for direct current when in a steady state; a resonance circuit connected in parallel with the breaker and superimposing resonance current on the direct current; and a first disconnector and a second disconnector connected to first and second connection points of the breaker and the resonance circuit, respectively, and forming a path for the direct current together with the breaker. The resonance circuit includes a series circuit that includes a capacitor and a reactor and generates the resonance current, a charging resistor for charging the capacitor with a direct-current potential of the direct-current line, a high-speed switch connected in series with the series circuit on the capacitor side and superimposing the resonance current on the direct current, and an arrester connected in parallel with the capacitor and the high-speed switch.

Abstract: An integrated circuit for protecting against transient electrical stress events includes a rail clamp device, and a trigger circuit including a resistive-capacitive (RC) filter, a drive circuit including a first inverter stage receiving an input signal from the RC filter, the drive circuit is configured to enable the rail clamp device during a transient electrical stress event, and a stress event detection circuit coupled to the RC filter. The drive circuit includes a configurable activation voltage which is controlled by the stress event detection circuit, wherein the activation voltage is reduced when the transient electrical stress event is detected.

Abstract: A switch device includes a common node that is connected to end nodes, such as that of computer interface ports. The switch device includes several switch circuits that can be connected in series to form a switch path between the common node and an end node. A switch circuit can include a main switch, such as a transistor that can be configured to withstand a positive or negative voltage surge by automatically changing the connection of its bulk.

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

Abstract: The present invention relates to an electrostatic discharge protection device containing a first insulating substrate and a second insulating substrate; a first opposing electrode and a second opposing electrode which two are disposed between the first insulating substrate and the second insulating substrate; external electrodes connected to the first opposing electrode and the second opposing electrode; and a discharge inducing section disposed apart from the front end of the first opposing electrode and the front end of the second opposing electrode.

Abstract: A relay control circuit for use with a relay having a coil voltage input. The relay control circuit includes a first input to receive a first voltage capable of energizing the relay from a de-energized state, a second input to receive a second voltage, less than the first voltage, that is capable of maintaining the relay in an energized state, and means, responsive to a relay control signal having one of a first state and a second state, for switchably coupling the coil voltage input to the first input for a period of time sufficient to energize the relay in response to the relay control signal having the first state, and for switchably coupling the coil voltage input to the second input in response to expiration of the period of time.

Abstract: In a semiconductor device, an IGBT and an SJMOSFET connected in parallel have respective gate terminals controlled independently of each other. When a high voltage occurs and a high current flows caused by short-circuit in an external circuit under a condition of ON state of the IGBT and SJMOSFET, an operational amplifier in the control IC detects the overcurrent through the IGBT and controls the gate signal to restrict the current through the IGBT. After that, the operational amplifier throttles the current through the IGBT according to a reference voltage of a capacitor decreasing by the discharge through a constant current source, thus conducting soft-OFF operation of the IGBT.