Abstract: The present invention relates to a semiconductor device and it is an object of the present invention to provide a semiconductor device that makes it easy to change a specification on driving of a power semiconductor element or control of a protection operation thereof. The semiconductor device includes a power semiconductor element, a main electrode terminal of the power semiconductor element, a sensor section that emits a signal corresponding to a physical state of the power semiconductor element, a sensor signal terminal connected to the sensor section, a drive terminal that supplies power to drive the power semiconductor element and a case that accommodates the power semiconductor element, the main electrode terminal, the sensor section, the sensor signal terminal and the drive terminal, and the sensor signal terminal and the drive terminal are provided so as to be connectable from outside the case.

Abstract: An arc fault identification unit for an electrical three-phase alternating current circuit with three phase conductors and a neutral conductor. The identification unit includes voltage sensors to periodically determine phase/neutral conductor voltage values and phase/phase voltage values current sensors to periodically determine phase conductor current variables which are used to determine the phase conductor current value and a value for the change in the electrical current over time per phase, and an evaluation unit connected to the voltage and current sensors. A current root mean square is compared with a current threshold value in each case and an excess current signal is emitted if the threshold value is exceeded; arc voltages are calculated and are compared with threshold values, with the result that arc fault identification signals are output.

Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to the ceramic puck. The thermally conductive base includes a plurality of thermal zones and a thermally managed material embedded in the thermally conductive base at the upper surface of the thermally conductive base in one or more of the plurality of thermal zones. The thermally managed material has different thermal conductive properties along a first direction and a second direction. The thermally conductive base further includes a plurality of thermal isolators that extend from the upper surface of the thermally conductive base towards a lower surface of the thermally conductive base between two or more of the plurality of thermal zones without contacting the lower surface of the thermally conductive base. Each of the plurality of thermal isolators provides a degree of thermal isolation.

Abstract: An integrated circuit includes a voltage regulating circuit in the form of only one transistor, or a group of several transistors in parallel, that are connected between first and second terminals configured to be coupled to an antenna. A control circuit operates to make the voltage regulating circuit inactive when a pulse generated by an electrostatic discharge event appears at one of the first and second terminals, regardless of the direction of flow of the pulse between the first and second terminals. An electrostatic discharge circuit is further provided to address the electrostatic discharge event.

Abstract: A power distribution system comprises a first power distribution unit coupled to an electrical power source and a second lower power distribution unit serially coupled to the first distribution unit and configured to supply to power to one or more loads. The first and second distribution units each comprise at least one solid state power controller configured to control current flow through the respective first and second distribution units. The first distribution unit further comprises control means configured to receive and analyze data related to measurements of downstream current and to interrupt the power within the first distribution unit when the received current measurements exceed a predetermined threshold. The system further includes a current monitoring component configured to measure the current flow to, or within, the second distribution unit, the current monitoring component configured to transmit current data to the control means within the first distribution unit for analysis.

Abstract: A GaN power switching device comprises a GaN transistor switch SW_MAIN has an integrated drain voltage sense circuit, which comprises GaN sense transistor SW_SEN and GaN sense resistor RSEN, which at turn-on form a resistive divider for sensing the drain voltage of SW_MAIN to provide a drain voltage sense output VDSEN. Fault detection logic circuitry of a driver circuit generates a fault signal FLT when VDSEN reaches or exceeds a reference voltage Vref, which triggers fast turn-off of the gate of SW_MAIN, e.g. within less than 100 ns of an overcurrent or short circuit condition. During turn-off, RSEN resets VDSEN to zero. For two stage turn-off, the driver circuit further comprises fast soft turn-off circuitry which is triggered first by the fault signal to pull-down the gate voltage to the threshold voltage, followed by a delay before full turn-off of the gate of SW_MAIN by the gate driver.

Abstract: A platen having improved thermal conductivity and reduced friction is disclosed. In one embodiment, vertically aligned carbon nanotubes are grown on the top surface of the platen. The carbon nanotubes have excellent thermal conductivity, thus improving the transfer of heat between the platen and the workpiece. Furthermore, the friction between the carbon nanotubes and the workpiece is much lower than that with conventional embossments, reducing particle generation. In another embodiment, a support plate is disposed on the platen, wherein the carbon nanotubes are disposed on the top surface of the support plate.

Abstract: A short-circuit protection circuit for a self-arc-extinguishing type semiconductor element includes a first protection circuit and a second protection circuit. The first protection circuit is configured to reduce a voltage between a control electrode and a first main electrode of the self-arc-extinguishing type semiconductor element when detecting overcurrent flowing between the first main electrode and a second main electrode. The second protection circuit is configured to: detect current flowing in an interconnection adapted to supply the drive voltage; determine, based on the detected current, whether the first protection circuit is in an operating state; and change the drive voltage to turn off the self-arc-extinguishing type semiconductor element when the first protection circuit is in the operating state.

Abstract: Electrical protection devices, such as for use with power systems for overvoltage protection, are disclosed. One electrical protection device includes a first electrical connection, a second electrical connection, a first electrical discharge device, and a second electrical discharge device. The first electrical discharge device includes a first conductive bus connected to the first electrical connection and a second conductive bus connected to the second electrical connection. The first electrical discharge device has a first breakdown voltage. The second electrical discharge device includes a third conductive bus connected to the first electrical connection and a fourth conductive bus connected to the second electrical connection. The second electrical discharge device has a second breakdown voltage.

Abstract: A semiconductor device includes an external terminal, a switching output stage that performs switching drive of a terminal voltage at the external terminal, an output control unit arranged to generate a drive signal for the switching output stage according to an input pulse signal, a counter arranged to count the number of pulses of the input pulse signal so as to generate a mask signal, a logical gate arranged to mask the input pulse signal according to the mask signal, and a comparator arranged to compare the terminal voltage with a predetermined threshold value voltage so as to generate a reset signal of the counter.

Abstract: A semiconductor device includes a main power semiconductor switching element, a current sense semiconductor switching element and a current sense semiconductor switching element protection circuit. The main power semiconductor switching element drives a load by switching. The current sense semiconductor switching element detects current flowing in the main power semiconductor switching element. The current sense semiconductor switching element protection circuit is provided between a gate of the main power semiconductor switching element and a gate of the current sense semiconductor switching element so as to protect the gate of the current sense semiconductor switching element at a reference potential different from that of the gate of the main power semiconductor switching element.

Abstract: The ceramic structure 10 includes a discoid ceramic base 12 and an electrode 14 buried in the ceramic base 12. The ceramic base 12 is a sintered body composed principally of alumina or a rare-earth metal oxide and has a thermal expansion coefficient of 7.5 to 9.5 ppm/K over the range of 40° C. to 1200° C. The electrode 14 is composed principally of metal ruthenium. The electrode 14 may be formed in the shape of a sheet. Alternatively, the electrode 14 may be patterned in the manner of a one-stroke sketch so as to extend over the entire cross section of the ceramic base 12.

Abstract: An embodiment electronic circuit includes an electronic switch comprising a load path, and a control circuit configured to drive the electronic switch and configured to operate in one of a first operation mode and a test mode. The control circuit comprises a test mode input and is configured to operate in the test mode based on a test signal received at the test mode input. The control circuit in the first operation mode is configured to generate a first protection signal based on a current-time-characteristic of a load current of the electronic switch and drive the electronic switch based on the first protection signal.

Abstract: An electrical link (8) between a DC high-voltage power source (2) and a user apparatus (5) including: an electrical conductor (4) surrounded by an insulating cover (4a), and an electrical protection device (3) that includes a conductive sleeve (7) arranged around the insulating cover (4a), a current generator (10) connected to a current injection point (30) of the conductive sleeve (7), a circuit breaker (9) arranged on the conductor and configured to cut off a current transiting through the conductor (4), and a detection module (11) connected to a current tap-off point (31) of the conductive sleeve (7) and to the circuit breaker (9) and configured to detect a current leak out of the conductor (4) and command the circuit breaker (9).

Abstract: In a protective relay device, a current differential relay computation unit determines whether or not a fault has occurred within a protected section based on an operating quantity and a restraint quantity. A disconnection detection unit computes a first amount of difference by subtracting the operating quantity a certain time period ago from the operating quantity at a present point in time, computes a second amount of difference by subtracting the restraint quantity the certain time period ago from the restraint quantity at the present point in time, and determines that a disconnection has occurred at one of first and second current transformers when a first determination condition that an absolute value of a sum of the first amount of difference and the second amount of difference is equal to or smaller than a first set value is satisfied.

Abstract: Provided is a control device that stops the power supply when the first FET is short-circuited. In the control device, a boost circuit increases the voltage of one end of a resistor on the boost circuit side to a predetermined voltage that is higher than the source voltage of the first FET. An AND circuit instructs the discharge circuit to decrease the voltage at the other end of the resistor when the voltage at the other end of the resistor is less than a threshold voltage if the AND circuit instructs the boost circuit to increase the voltage at the one end of the resistor on the boost circuit side. The threshold voltage exceeds the voltage at the one end of the resistor if the voltage at the one end of the resistor on the boost circuit is the predetermined voltage and if the first FET is short-circuited.

Abstract: A monitoring system for an enclosure having an arc quenching gas includes at least one fluid characteristic sensor in fluid communication with an interior the enclosure, and an electronic controller operatively coupled to the at least one fluid characteristic sensor. The electronic controller forecasts a maintenance event based on values received from the at least one fluid characteristic sensor.

Abstract: An overcurrent protection device according to an embodiment of the present disclosure may include a first electrode disposed substantially parallel to a second electrode. A material may be disposed between the first electrode and the second electrode. A plurality of conductive material nodules may be disposed in the material between the first electrode and the second electrode, including a first conductive material nodule at least partially contacting an inner surface of the first electrode and a second conductive material nodule at least partially contacting an inner surface of the second electrode and the first conductive material nodule. In response to an overcurrent condition the material may be configured to expand, such that the contact between the first electrode, the first conductive material nodule, the second conductive material nodule, and the second electrode is at least partially interrupted.

Abstract: An electrical circuit and a method for regulating current and providing a circuit breaker to the electrical circuit. The circuit includes a bidirectional cell including a set of forward switches for power flow during a forward mode of operation and a set of reverse switches for providing reverse power flow during a reverse mode of operation, a control inductor for controlling current flow during the reverse mode of operation, and a voltage clamping switch configured to provide the control inductor in the circuit during the reverse mode of operation and remove the control inductor from the circuit during the forward mode of operation. The circuit is operated in at least the reverse mode of operation.

Abstract: Embodiments of the present disclosure provide an arrangement for single wire communications (SWC) for an electronic device. In one instance, the arrangement may comprise a cable assembly to connect with the electronic device, wherein the cable assembly may include a wire to conduct SWC and a cover portion to cover a portion of the wire. The cover portion may comprise a ferro-dielectric material. The arrangement may further include a control logic coupled with the cable assembly, to adjust characteristics associated with the ferro-dielectric material, to tune a signal termination impedance value associated with the cable assembly. Other embodiments may be described and/or claimed.