Abstract: An apparatus for plasma treatment comprises: an outer chamber for plasma generation, which is connected to a gas introduction portion for plasma generation; a coil for plasma generation, which is provided along the periphery of the outer chamber for plasma generation; and a treatment chamber, which is arranged below the outer chamber for plasma generation. In this apparatus for plasma treatment, inside the outer chamber for plasma generation, an inner chamber having a cross-sectional area smaller than that of the outer chamber for plasma generation is provided coaxially with the outer chamber for plasma generation such that the area between the inner periphery of the outer chamber and the outer periphery of the inner chamber is a plasma generation zone.

Abstract: Disclosed is an apparatus and method for controlling boiling condition of hot H3PO4 solution by adjusting the vapor extracting rate thereof, wherein an acid tank filled with hot H3PO4 solution to a level surface is located in a treatment room and a temperature thermocouple is arranged above the level surface of the hot H3PO4 solution to monitor the vapor temperature near the level surface of the H3PO4 solution. The vapor temperature is used to adjust the extracting rate of the treatment room by control of a damper connected to an outlet of the treatment room. According to the present invention, the treatment apparatus and method can control the boiling condition of the hot H3PO4 solution thereof by properly adjusting the extracting rate, and therefore avoid defects and loss of control in manufacturing processes.

Abstract: A grid protects a manometer diaphragm from plasma. A plasma chamber is used to generate a plasma. A manometer is used to measure the pressure in the plasma chamber. A grounded electrically conductive grid is used to screen out ions in the plasma before they reach a diaphragm in the manometer. The grid may be formed in a centering ring. A pipe may be used to connect the manometer to the plasma chamber. The centering ring may be placed in the joint in the pipe, with the centering ring and grid being grounded to the pipe.

Abstract: A single, or common, ion beam source is utilized for ion beam deposition (IBD) of defect-free multilayer coatings, e.g., multilayer, carbon-based protective overcoats for magnetic and/or magneto-optical (MO) data recording/information storage and retrieval media such as hard disks. According to the inventive methodology, a plurality of source gas supply means for supplying a single IBD source with different source gases for each of the layers of the multilayer are selectively operated in “vent” and “run” modes by means of a plurality of valves, the opening and closing of which are determined by a programmable gas flow controller. The inventive method and apparatus advantageously provide IBD of multilayer coatings with minimum cross-contamination of individual layers, at a reduced equipment cost and size obtained by elimination of the need for separate ion beam sources and associated vacuum pump means for each constituent layer of the multilayer.

Abstract: A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.

Abstract: A discharge tube is assembled from three sections formed of metal. A first discharge tube element and a second discharge tube element are connected with an insulator for forming a discharging gap and vacuum-sealing interposed between connecting flanges of both discharge tube elements along with an O-ring. The first discharge tube element and a third discharge tube element and a third discharge tube element are connected in a similar manner, and a discharge gap is formed between adjacent discharge tube elements. A high-frequency power supply is connected to each discharge tube element. Respective discharge tube elements are provided with cooling medium flow paths separately each other.

Abstract: A method for in-situ descum/hot bake/dry etch a polyimide photoresist layer and a passivation layer in a singe process chamber is disclosed. A process chamber that can be used for conducting in-situ a descum, a hot bake and a dry etch process sequentially in the same chamber is also disclosed. In the method, a process chamber equipped with a wafer platform and a wafer backside heating and cooling device is first provided, followed by the step of positioning a wafer that has a passivation layer and a patterned polyimide photoresist layer on top of the platform. An oxygen plasma is then generated in the chamber cavity to conduct a descum process, followed by flowing a heated inert gas onto a backside of the wafer to conduct a hot bake process. A cooling inert gas is then flown onto the wafer backside and an etchant gas is flown into the chamber to conduct a dry etch process for forming a via opening in the wafer.

Abstract: A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and semiconductor plate are positioned to prevent substantial coil generated electric field components from being incident on the semiconductor plate. During a first interval the coil produces an RF electromagnetic field that results in a plasma that strips photoresist from a semiconductor wafer. During a second interval the semiconductor plate and another electrode produce an RF electromagnetic field that results in a plasma that etches electric layers, underlayers and photoresist layers from the wafer.

Abstract: A vacuum chamber with a cover with a first section, a second section, and a pocket between the first section and second section is provided. The vacuum chamber has a main cavity to which the first section is adjacent. The vacuum chamber may be used for plasma processing, which may require a critical element to be supported by the first section. The pocket is in fluid communication with the main cavity. When a vacuum is created in the main cavity, the pressure is also reduced in the pocket. As a result, the second section of the cover is deformed by the vacuum in the pocket. However, the vacuum in the pocket helps to prevent the first section from deforming, providing better support for the critical element.

Abstract: In an apparatus for initial ion cleaning, vapor metal deposition and protective coating of objects by vacuum deposition, an improved high voltage high current feedthru fitting with improved anti-fouling arc-resistant characteristics. The apparatus includes a vacuum chamber for receiving the objects which are held on a movable rack or support. A metal such as aluminum is vaporized centrally in the chamber in a well known fashion after the chamber has been substantially evacuated of air molecules for uniform vapor deposition of the metal atop exposed surfaces of the objects. The improved feedthru fitting is connected through a wall of an elongated housing which is connected over an elongated opening formed through a chamber side wall. An elongated conductive preferably aluminum rod is disposed within the housing along the opening into the chamber interior generally coextensive with two apertured delivery tubes or members positioned within the housing.

Abstract: Inductively-coupled plasma reactors for anisotropic and isotropic etching of a substrate, as well as chemical vapor deposition of a material onto a substrate. The reactor system comprises a processing chamber with a plasma shaping member contained therein. In one embodiment, the plasma shaping member extends from a portion of the top wall of the processing chamber, downward into the chamber, and it is generally positioned above the center of the substrate. The shaping member may be a separate piece of hardware attached to the top wall of the chamber, or it may be an integral part of the wall itself. Preferably, the plasma shaping member has a recessed portion in the middle and an extended portion located at a distance outside that of the recessed region. The plasma shaping member may be fabricated from virtually any material since it is at an electrically floating potential during processing of the substrate.

Abstract: A carbon deposition chamber is provided with several advantages. The gas mixture used within the deposition process is expressed from tubing through three zones, which are each individually determined with needle valves. The substrate is permitted to rotate back-and-forth to permit more even deposition of carbon films onto the substrate. The heating filaments are permitted to expand and contract without breakage by permitting the electrode attached to one end of the filaments to move freely as the filaments change in length. The substrate and the heating filaments are cooled to a temperature to prevent carbonization by permitting a cooling fluid to be passed through tubing connected to these elements in a heat sink like manner.

Abstract: Disclosed is an apparatus for generating ICP, which has a heater having a hot wire as a heating source for heating elements in a chamber and inner wall of the chamber and also efficiently transfers heat of the heater through a heat transferring gas to the elements in the chamber and the inner wall of the chamber. According to the present invention, the elements in the chamber and the inner wall of the chamber can be heated up to a temperature of about 200° C., thereby reducing the adhesion of the by-product served as the source generating the undesirable particles. In addition, since the hot wire having a longer life span than the halogen lamp is used as heat radiating means, the life span of the apparatus is also increased.

Abstract: A Faraday shield for use with a plasma reactor has a variable shielding efficiency. The shield is divided into numerous shield segments that may each be selectively grounded or ungrounded. The rate of transition between fully ungrounded and fully grounded states is controllable so as to maintain stable plasma conditions in the plasma reactor during the transitional period. The time rate of change of the shielding efficiency can be controlled at a predetermined rate once plasma strike is achieved, or can be made conditional to successful matching at the previous shield setting. When the Faraday shield is fully grounded, the amount of on-wafer and on-chamber contamination is reduced by reducing the rate of sputtering of chamber surfaces.

Abstract: An apparatus configured to generate a time-varying magnetic field through a field admission window of a plasma processing chamber to create or sustain a plasma within the chamber by inductive coupling. The apparatus includes a magnetic core presenting a pole face structure,—an inductor means associated with the magnetic core, arranged to generate a time-varying magnetic field through the pole face structure, and—a device for injecting gas into the chamber and through the chamber and through the magnetic core.

Abstract: The present invention provides a plasma processing apparatus, comprising a chamber for applying a film depositing treatment or an etching treatment to a target object by utilizing plasma, and a gate liner covering the surface of the open portion of a chamber gate for transferring the target object into and out of the chamber so as to prevent the chamber gate from being affected by the plasma. A gate aspect ratio, which is a ratio of the depth of the open portion of the chamber gate to the length in the short-side direction, is determined in accordance with the anode/cathode ratio, which is a ratio in area of the anode region to the cathode region within the chamber, so as to prevent an abnormal discharge within the gate space.

Abstract: The present invention provides a plasma enhanced chemical vapor deposition method and apparatus for reducing the hydrogen concentration in amorphous silicon carbide films deposited on a substrate. The process combines a noble gas such as helium with a silicon source such as silane and a carbon source such as methane in the reaction zone of a CVD chamber. The resulting silicon carbide films have a low concentration of hydrogen and high compressive stress. The films are preferably produced with a plasma generated by a mixture of high and low radio frequency.

Abstract: A method for detecting an etching endpoint and a plasma etching apparatus and a plasma etching system using such a device are disclosed, in which time series data of a signal corresponding to the amount of light of the plasma light generated during the plasma etching process are arithmetically processed, so that the change of light amount is corrected and an etching endpoint is detected from the time series data after the correction.

Abstract: To protect a dielectric window in an inductively coupled plasma reactor from depositions of coating or etched material from the plasma, a dielectric insert is placed inside of the chamber closely adjacent the window. Where a slotted shield inside of the window protects the window from deposition, but has slots through which some material can pass in a direction toward the window, the insert is placed between the window and the shield. The insert is formed of a material that is compatible with the process being carried out on a semiconductor wafer within the chamber. Where the window and shield are planar, an unprocessed wafer of the same type and material as the wafer being processed is used for the insert.

Abstract: A plasma processing system efficiently couples radiofrequency energy to a plasma confined within a vacuum processing space inside a vacuum chamber. The plasma processing system comprises a frustoconical dielectric window, an inductive element disposed outside of the dielectric window, and a frustoconical support member incorporated into an opening in the chamber wall. The support member has a frustoconical panel that mechanically supports a frustoconical section of the dielectric window. The dielectric window is formed of a dielectric material, such as a ceramic or a polymer, and has a reduced thickness due to the mechanical support provided by the support member. The processing system may include a gas source positioned above the substrate support for introducing the process gas into the vacuum processing space.