Abstract: There is provided by this invention a unique ion source for depositing thin films on a substrate in a vacuum chamber that neutralizes the positive electric charges that develop on the substrate and vacuum chamber apparatus that may cause arcing and degradation of the film deposition. A power supply with a reversing voltage waveform is utilized that neutralizes the electric charge on the substrate and the vacuum chamber apparatus. A power supply applies an ac voltage to the anode of the ion source and a rectified ac voltage to the cathode. The ground terminal of the power supply is connected to the vacuum chamber. The rectifying circuit is comprised of zener diodes that clamp the voltage in the circuit from spikes during plasma ignition and a capacitor connected to negatively bias the cathode when there is no plasma discharge.

Abstract: A method includes removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. A replacement for the removed deposition chamber liner piece is provided into the chamber by passing the replacement through said passageway. A liner apparatus includes a plurality of pieces which when assembled within a selected semiconductor substrate deposition processor chamber are configured to restrict at least a majority portion of all internal wall surfaces which define said semiconductor substrate deposition processor chamber from exposure to deposition material within the chamber. At least some of the pieces are sized for passing completely through a substrate passageway to the chamber through which semiconductor substrates pass into and out of the chamber for deposition processing.

Abstract: An apparatus and method is provided for positioning and utilizing a Faraday shield in direct exposure to a plasma within an inductively coupled plasma etching apparatus. Broadly speaking, the Faraday shield configuration maintains a condition of an etching chamber window. At a minimum, positioning the Faraday shield between the window and the plasma prevents erosion of the window resulting from plasma sputter and shunts heat generated by an etching process away from the window.

Abstract: A plasma processing apparatus for providing plasma processing to an object placed inside a processing chamber includes a vacuum chamber, a process gas feeder feeding gas into the vacuum chamber, a wafer electrode disposed within the vacuum chamber for mounting the object, a wafer bias power generator supplying bias voltage to the wafer electrode, and a plasma generator for generating plasma within the vacuum chamber. The wafer bias power generator includes a clip circuit for clipping either a positive-side voltage or a negative-side voltage to a predetermined voltage.

Abstract: A plasma source assembly including an outer shield, a dielectric chamber wall, and a helical coil provided between the outer shield and the dielectric chamber wall. The plasma source assembly also includes a coil support assembly configured to facilitate repeatable performance of the helical coil. Preferably, the assembly includes a plenum cooling plate that is configured to supply cooling fluid to a first cooling rod provided within a resonator cavity defined by the chamber wall and the outer shield, and receive cooling fluid from a second cooling rod provided within the resonator cavity. The assembly preferably also includes a spacer provided between the first cooling rod and the second cooling rod, and coil insulators having holes configured to receive the helical coil.

Abstract: A plasma source using a combination of concentric coils and ferromagnetic cores drives a radio frequency magnetic flux with controlled radial magnitude variation through a window into a reduced pressure process chamber, to provide improved plasma generation efficiency and ease of process uniformity adjustment.

Abstract: A plasma processing method includes controlling a pressure of an interior of a vacuum chamber to a specified pressure by exhausting the interior of the vacuum chamber while supplying gas into the interior of vacuum chamber. While the pressure of the interior of the vacuum chamber is being controlled, high-frequency power is supplied to one end of a first conductor which is opened at another end, and which is configured as a vortex. Also, grounding one end of a second conductor which is opened at another end and which is configured as a vortex. Finally, electromagnetic waves from the first conductor and the second conductor radiate into the vacuum chamber, generating plasma in the vacuum chamber and processing a substrate placed on the electrode within the vacuum chamber.

Abstract: A plasma generating device, has a plurality of cavities shaped like half-ellipsoids, a plasma cavity, and microwave sources. The present invention takes advantage of geometrical properties of the propagation of electromagnetic waves by enclosing an electromagnetic field in the microwave range in overlapping cavities that together are shaped like a plurality of half ellipsoids. Each of the cavities has a first focus and a second focus, with the first foci of the cavities place close to each other. Microwaves entering the cavities at the second foci propagate inside the cavity and are focused at the first foci. The area around the first foci of both half ellipsoids forms a plasma cavity, providing a large volume filled with a microwave field. Thereby an increased volume of an electromagnetic field and thus of a plasma is achieved.

Abstract: A method and apparatus for depositing a uniform coating on a large area, planar surface using an array of multiple plasma sources and a common reactant gas injector. The apparatus includes at least one array of a plurality of plasma sources, wherein each of the plurality of plasma sources includes a cathode, an anode, and an inlet for a non-reactive plasma source gas disposed in a plasma chamber, and a common reactant gas injector disposed in a deposition chamber that contains the substrate. The common reactant gas injector provides a uniform flow of at least one reactant gas to each of the multiple plasmas generated the multiple plasma sources through a single delivery system. The at least one reactant gas reacts with the plurality of plasmas to form a uniform coating on a substrate.

Abstract: In a microwave plasma processing apparatus that uses a radial line slot antenna, the efficiency of cooling of a shower plate is optimized and simultaneously the efficiency of microwave excitation is optimized, by causing a radiation surface of the radial line slot antenna to make an intimate contact with a cover plate that forms a part of an outer wall of the processing chamber and makes an intimate contact with the shower plate.

Abstract: A plasma confining assembly for minimizing unwanted plasma formations in regions outside of a process region in a process chamber is disclosed. The plasma confining assembly includes a first confining element and second confining element positioned proximate the periphery of the process region. The second confining element is spaced apart from the first confining element. The first confining element includes an exposed conductive surface that is electrically grounded and the second confining element includes an exposed insulating surface, which is configured for covering a conductive portion that is electrically grounded. The first confining element and the second confining element substantially reduce the effects of plasma forming components that pass therebetween.

Abstract: In a microwave plasma processing apparatus that uses a radial line slot antenna, a slot plate (16) is formed by a material having a thermal expansion rate close to the wave retardation plate (18), or depositing a metal on a dielectric plate constituting the wave retardation plate (18). An intimate contact between the wave retardation plate and a slot plate constituting a microwave radiation surface is improved so as to prevent an abnormal electric discharge.

Abstract: The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is at least about 0.15, more desirably about 0.2–0.25.

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and further includes a plasma confinement arrangement. The plasma confinement arrangement includes a magnetic array disposed inside of the chamber. The magnetic array has a plurality of magnetic elements that are disposed around a plasma region within the process chamber.

Abstract: A reaction chamber for carrying out substrate coating methods is disclosed, having at least one opening in at least one outer wall in which an HF feedthrough is inserted in a pressure or vacuum tight manner. The reaction chamber is further characterized by a combination of the following features: a support plate with coolant channels, and at least one opening for an HF line; an HF line collar in the zone disposed in the reaction chamber, a first seal on the collar; a first disc from an insulating material between a second seal on the support plate and the first seal on the collar; a thread in the zone outside the reaction chamber, a screw element being screwed onto the thread, all configured to prevent an electrical contact between the HF line and the support plate being established or an arc-over between the HF line and the support plate occurring.

Abstract: A plasma CVD apparatus is used to form thin films of excellent uniform thickness on both surfaces of a substrate without the step of turning a substrate over, and includes two connected vacuum chambers, each of which is equipped with a plurality of electrode array layers therein, whereby at least a pair of substrate holders are transported between adjacent electrode array layers in a first vacuum chamber to form a first thin film on the one surface of substrates facing the electrode array layers, and then transported into a second vacuum chamber so that the other surface of the substrates faces to an electrode array layer to form a second thin film on the other surface.

Abstract: A plasma processing apparatus comprises a plate that separates a high frequency induction antenna from a vacuum chamber. The plate comprises a nonmagnetic metal plate that has an opening and a dielectric material member that seals the opening. The area of the nonmagnetic metal plate is larger than the area of the dielectric material member.

Abstract: An apparatus for controlling the voltage applied to a shield interposed between an induction coil powered by a power supply via a matching network, and the plasma it generates, comprises a shield, a first feedback circuit, and a second feedback circuit. The power supply powers the shield. The first feedback circuit is connected to the induction coil for controlling the power supply. The second feedback circuit is connected to the shield for controlling the voltage of the shield. Both first and second feedback circuits operate at different frequency ranges. The first feedback circuit further comprises a first controller and a first sensor. The first sensor sends a first signal representing the power supplied to the inductive coil to the first controller. The first controller adjusts the power supply such that the power supplied to the inductor coil is controlled by a first set point. The second feedback circuit further comprises a second sensor, a second controller, and a variable impedance network.

Abstract: An improved deposition baffle, that is provided to protect a dielectric window from conductive deposits, is provided in high-density-plasma apparatus having slots with features therein which spatially distribute the transmitted RF power density through a baffle. The features form connections and current paths across the slot boundaries on the side of the baffle that faces the plasma, away from the window through which a coil couples RF power, thereby minimizing interference with the inductive coupling. In one embodiment, bridges across the slots on the plasma side of the baffle improve the flux distribution through the baffle. In another embodiment, blades in and parallel to the slots, on the coil side of the baffle but which are supported by connections on the plasma side of the baffle, reduce the formation of plasma in the slots and prevents resputtering of material from the slot boundaries.

Abstract: A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH4 and H2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH4 and H2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma. High frequency voltages applied to the coils are the same in phase and directions of current flowing through adjacent portions of the coils are the same.