Abstract: Provided is a quantum dot having a core-shell structure, wherein a core includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell is disposed on the core and includes a Group II-VI compound, wherein the quantum dot further includes phosphorus and fluorine, and the quantum dot does not include cadmium.

Abstract: In an aspect, a Co2Z-type ferrite comprises oxides of at least Me, Co, Mo, Li, and Fe; wherein Me is at least one of Ba or Sr. In another aspect, the Co2Z-type ferrite comprises a Z-type hexaferrite an amount of lithium molybdate. In another aspect, the Co2Z-type ferrite has a formula Li2MoO4·BaxSr3-xCo2+y?zMe?yMe?zFe24-2y-mO41, wherein Me? is at least one of Ti, Mo, Ru, Ir, Zr, or Sn; Me? is at least one of Zn, Mn, or Mg; x is 0 to 3; y is 0 to 1.8; z is 0 to 1.8; and m is ?4 to 4. In yet another aspect, a method of making a Co2Z-type ferrite comprises milling an initial Co2Z-type ferrite and Li2MoO4 to form a mixed ferrite; and calcining the mixed ferrite to form the Co2Z-type ferrite.

Abstract: A cadmium free quantum dot including a core that includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell that is disposed on the core and includes a zinc chalcogenide, wherein the quantum dot further includes magnesium and the mole ratio of Te:Se is greater than or equal to about 0.1:1 in the quantum dot; a production method thereof; and an electronic device including the same.

Abstract: An object is to improve quality of a nitride crystal. A crystal represented by a composition formula InxAlyGa1-x-yN (satisfying 0?x?1, 0?y?1, and 0?x+y?1), wherein the concentration of carbon in the crystal is less than 1×1015 cm?3, and the concentration of an electron trap E3 that exits in an energy range from 0.5 eV to 0.65 eV from a lower end of a conduction band in the crystal is less than 1×1014 cm?3.

Abstract: A rare earth aluminate sintered compact including rare earth aluminate phosphor crystalline phases and voids, wherein an absolute maximum length of 90% or more by number of rare earth aluminate phosphor crystalline phases is in a range from 0.4 ?m to 1.3 ?m, and an absolute maximum length of 90% or more by number of voids is in a range from 0.1 ?m to 1.2 ?m.

Abstract: A magnetic microcapsule, preparation method thereof and a magnetic film are disclosed, relating to microcapsule technology. The microcapsules use a combination of cationic and anionic polymers as the shell material, forming spindle-shaped, durable spheres to enhance strength. The core material contains at least two types of magnetic particles with different strengths, allowing adjustable magnetic forces to improve writing, erasure, and contrast. It also includes non-magnetic particles, an oil-based solvent, and a suspension stabilizer, forming a stable cross-linked network and electrostatic adsorption layer to prevent sedimentation and ensure smooth writing and lasting marks. The resulting magnetic film offers excellent responsiveness, enabling quick and thorough erasure by adjusting the magnetic pen's force and frequency.

Abstract: An electrochemical half-cell includes an electrical terminal lead in contact with a solid electrolyte, wherein the solid electrolyte includes a doped high-entropy oxide. The electrochemical half-cell can be used as either a reference half-cell or a measuring half-cell. Methods of manufacturing the solid electrolyte and the electrochemical half-cell are further disclosed.

Abstract: An ink composition that contains light-emitting nanocrystalline particles, a photopolymerizable component containing at least one photopolymerizable compound and having a Hansen solubility parameter ?p of 3.0 MPa0.5 or more, and a phosphite compound with a partial structure represented by the following formula (1). [In the formula (1), X1 to X3 independently denote an oxygen atom or a sulfur atom, R1 denotes an alkyl group, and * denotes a bonding arm.

Abstract: The present disclosure teaches an article of manufacture using an industrial (or commercial) manufacturing process. The article of manufacture comprises an infrared (IR) luminescent material that emits in the IR wavelength range (e.g., from approximately seven-hundred nanometers (˜700 nm) to approximately one millimeter (˜1 mm)) after being excited by incident wavelengths of between ˜100 nm and ˜750 nm (or visible light). In other words, once the material has been exposed to visible light, the material will continue to emit in the IR wavelength range for a period of time, even when the material is no longer exposed to the visible light.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax [MFy]:Mn+4 I includes combining a first solution comprising a source of A and a second solution comprising H2MF6 in the presence of a source of Mn, to form the Mn+4 doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and wherein a value of a Hammett acidity function of the first solution is at least ?0.9. Particles produced by the process may have a particle size distribution with a D50 particle size of less than 10 ?m.

Abstract: A cadmium free quantum dot including a core including a first semiconductor nanocrystal, and a semiconductor nanocrystal shell disposed on the core, a composition of the semiconductor nanocrystal shell being different from a composition of the first semiconductor nanocrystal, a production method thereof, and a device including the same are disclosed. The semiconductor nanocrystal shell includes a zinc chalcogenide, the zinc chalcogenide includes selenium, tellurium, sulfur, or a combination thereof, and the quantum dot further alkaline an alkaline earth metal.

Abstract: The present disclosure relates to a method for obtaining lead-free piezoelectric materials, including: Step S100, adjusting the T/O phase boundary of a first lead-free piezoelectric material: for the first lead-free piezoelectric material, adjusting the T/O phase boundary between the tetragonal phase T and the orthorhombic phase O to be near the room temperature by doping; Step S200, further adjusting the C/T phase boundary and the O/R phase boundary: further adjusting the C/T phase boundary between the cubic paraelectric phase C and the tetragonal phase T, and the O/R phase boundary between the orthorhombic phase O and the rhombohedral phase R by doping, so as to enable the C/T phase boundary and the O/R phase boundary to approach the T/O phase boundary; and Step S300, obtaining second lead-free piezoelectric materials: obtaining multiple second lead-free piezoelectric materials with different piezoelectric constants d33 and different Curie temperatures TC in the process.

Abstract: A hexagonal ferrite magnetic powder is significantly more useful for achieving simultaneously both the enhancement of the recording density and the enhancement of the SNR of a magnetic recording medium. The hexagonal ferrite magnetic powder contains Bi at a Bi/Fe molar ratio in a range of 0.035 or less, has a saturation magnetization ?s of 42.0 Am2/kg or more and a Dx volume calculated based on the crystallite diameters of 1,800 nm3 or less. A method for producing hexagonal ferrite magnetic powder includes a step of performing a treatment of immersing hexagonal ferrite magnetic powder containing Bi in a solution having dissolved therein a compound X that forms a complex with Bi, so as to elute a part of Bi existing in the hexagonal ferrite magnetic powder into the solution.

Abstract: A semiconductive composite material comprising a non-polar organic polymer, a polar organic copolymer, and an electrical conducting effective amount of an ultra-low-wettability carbon black. Also a method of making the composite material; a crosslinked polyethylene product made by curing the composite material; manufactured articles comprising a shaped form of the inventive composite material or product; and methods of using the inventive composite material, product, or articles.

Abstract: Luminescent diamond is made subjecting a volume of diamond grains and catalyst material to high-pressure/high-temperature (HPHT) conditions. A pressure apparatus and/or a pressure cell is specially configured to impose a differential or asymmetric pressure onto the diamond volume during the HPHT conditions. This subjects the diamond grains to differential strain that increases the degree of plastic deformation of the diamond grains to increase the formation of nitrogen vacancy centers. Diamond pellets formed by such process and subjected to differential pressure can have an aspect ratio, or an aspect ratio change, of greater than one. The temperature of the HPHT process is 1.800° C. or less to facilitate desired nitrogen migration to preferentially promote formation of NV centers over NVN and N3 centers in the diamond pellets to provide a degree of luminescence in a red wavelength spectrum greater than diamond pellets formed by some other HPHT processes.

Abstract: The present invention relates to a method of manufacturing gallium nitride quantum dots, and more particularly, to a method of manufacturing gallium nitride quantum dots doped with metal ions, which uses a wet-based synthesis method capable of lowering the fluorescence energy of pure gallium nitride by introducing metal ions into pure gallium nitride.

Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.

Abstract: Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

Abstract: Provided are a directionally assembled flexible MOF hydrogel, a preparation method and a proton conduction application thereof. The prepared method includes: mixing a transition metal salt and L-Glu to prepare a mixed aqueous solution; putting the mixed aqueous solution into a reaction kettle to react at a constant reaction temperature in a range from 80° C. to 200° C. for a reaction period of 1-5 hours, to thereby obtain a reacted aqueous solution; cooling the reacted aqueous solution to room temperature; and washing the reacted aqueous solution after the cooling with deionized water and absolute ethanol, to thereby obtain the directionally assembled flexible MOF hydrogel, L-Glu-M (M?Zr, Fe, or Co), for sealing and storing. The preparation method is simpler and easier to operate, and the directionally assembled flexible MOF hydrogel has great prospects in the field of proton conducting technologies.

Abstract: This disclosure concerns a method of making a ligand for Quantum Dot functionalization, a method of making a functionalized Quantum Dot (QD) with a ligand, and a method of making a transparent luminescent quantum dot thiol-yne nanocomposite with tailorable optical, thermal, and mechanical properties. The prepolymer solution and functionalized Quantum Dot can be used in additive manufacturing.