Patents Examined by Lynne Edmondson
  • Patent number: 11661547
    Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.
    Type: Grant
    Filed: May 26, 2020
    Date of Patent: May 30, 2023
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG SDI CO., LTD., SAMSUNG DISPLAY CO., LTD.
    Inventors: Shin Ae Jun, Taekhoon Kim, Garam Park, Yong Seok Han, Eun Joo Jang, Hyo Sook Jang, Tae Won Jeong, Shang Hyeun Park
  • Patent number: 11655414
    Abstract: The present disclosure teaches an article of manufacture using an industrial (or commercial) manufacturing process. The article of manufacture comprises an infrared (IR) luminescent material that emits in the IR wavelength range (e.g., from approximately seven-hundred nanometers (˜700 nm) to approximately one millimeter (˜1 mm)) after being excited by incident wavelengths of between ˜100 nm and ˜750 nm (or visible light). In other words, once the material has been exposed to visible light, the material will continue to emit in the IR wavelength range for a period of time, even when the material is no longer exposed to the visible light.
    Type: Grant
    Filed: April 2, 2021
    Date of Patent: May 23, 2023
    Assignee: Battle Sight Technologies, LLC
    Inventors: Nicholas R. Ripplinger, Christopher J. Vogt
  • Patent number: 11639465
    Abstract: A phosphor is specified. The phosphor has the general molecular formula: (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, -E=Eu, Ce, Yb and/or Mn, XC?N and XD=C. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; 3.5?u?4; 3.5?v?4; (?0.2)?w?0.2 and 0?m<0.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: May 2, 2023
    Assignee: OSRAM OLED GMBH
    Inventors: Markus Seibald, Dominik Baumann, Tim Fiedler, Stefan Lange, Hubert Huppertz, Daniel Dutzler, Thorsten Schroeder, Daniel Bichler, Gudrun Plundrich, Simon Peschke, Gregor Hoerder, Gina Maya Achrainer, Klaus Wurst
  • Patent number: 11639469
    Abstract: A semiconductor nanocrystal particle including a transition metal chalcogenide represented by Chemical Formula 1, the semiconductor nanocrystal particle having a size of less than or equal to about 100 nanometers, and a method of producing the same: M1M2Cha3??Chemical Formula 1 wherein M1 is Ca, Sr, Ba, or a combination thereof, M2 is Ti, Zr, Hf, or a combination thereof, and Cha is S, Se, Te, or a combination thereof.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: May 2, 2023
    Assignees: SAMSUNG ELECTRONICS CO., LTD., THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO
    Inventors: Jihyun Min, Eun Joo Jang, Hyo Sook Jang, Ankit Jain, Edward Sargent, Oleksandr Voznyy, Larissa Levina, Sjoerd Hoogland, Petar Todorovic, Makhsud Saidaminov
  • Patent number: 11631794
    Abstract: A thermoelectric material of the present invention includes copper, tin, and sulfur, wherein a ratio A/B of the number A of copper atoms to the number B of tin atoms is 0.5 to 2.5 and a content of a metal element other than copper and tin is 5 mol % or less with respect to total metal elements. Additionally, the thermoelectric material of the present invention has a thermal conductivity less than 1.0 W/(m·K) at 200 to 400° C.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: April 18, 2023
    Assignee: NIPPON SHOKUBAI CO., LTD.
    Inventors: Takeo Akatsuka, Hironobu Ono, Shinya Maenosono, Mikio Koyano
  • Patent number: 11615901
    Abstract: A ferrite sintered magnet comprises a plurality of main phase grains containing a ferrite having a hexagonal structure, wherein at least some of the main phase grains are core-shell structure grains each having a core and a shell covering the core; and wherein the minimum value of the content of La in the core is [La]c atom %; the minimum value of the content of Co in the core is [Co]c atom %; the maximum value of the content of La in the shell is [La]s atom %; the maximum value of the content of Co in the shell is [Co]s atom %; [La]c+[Co]c is 3.08 atom % or more and 4.44 atom % or less; and [La]s+[Co]s is 7.60 atom % or more and 9.89 atom % or less.
    Type: Grant
    Filed: January 31, 2020
    Date of Patent: March 28, 2023
    Assignee: TDK Corporation
    Inventors: Hiroyuki Morita, Masanori Ikeda, Yoshitaka Murakawa, Shogo Muroya
  • Patent number: 11613500
    Abstract: Disclosed herein are embodiments of composite hexagonal ferrite materials formed from a combination of Y phase and Z phase hexagonal ferrite materials. Advantageously, embodiments of the material can have a high resonant frequency as well as a high permeability. In some embodiments, the materials can be useful for magnetodielectric antennas.
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: March 28, 2023
    Assignee: Skyworks Solutions, Inc.
    Inventors: Michael David Hill, Srinivas Polisetty, Constance M. Griffith
  • Patent number: 11597878
    Abstract: A method for producing a rare earth aluminate fluorescent material, including: preparing, as raw materials, cerium oxide having a crystallite diameter in a range of 200 ? or more and 1,600 ? or less, a compound containing at least one kind of a rare earth element Ln selected from the group consisting of Y, La, Lu, Gd, and Tb, a compound containing Al, and depending on necessity a compound containing at least one kind of an element M1 selected from the group consisting of Ga and Sc, wherein a total molar ratio of the rare earth element Ln and cerium is 3, a total molar ratio of Al and the element M1 is a product of a parameter k in a range of 0.95 or more and 1.05 or less and 5, a molar ratio of cerium is a product of a parameter n in a range of 0.005 or more and 0.050 or less and 3, and a molar ratio of the element M1 is a product of a parameter m in a range of 0 or more and 0.02 or less, the parameter k, and 5; and subjecting a mixture of the raw materials to a heat treatment to provide a calcined product.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: March 7, 2023
    Assignee: NICHIA CORPORATION
    Inventors: Atsushi Yoshinari, Shoji Hosokawa
  • Patent number: 11597010
    Abstract: Provided is a plurality of flaky magnetic metal particles of embodiments, each flaky magnetic metal particle having a flat surface having either or both of a plurality of concavities and a plurality of convexities, the concavities or convexities being arranged in a first direction and each having a width of 0.1 ?m or more, a length of 1 ?m or more, and an aspect ratio of 2 or higher; and a magnetic metal phase containing at least one primary element selected from the group consisting of iron (Fe), cobalt (Co), and nickel (Ni). The flaky magnetic metal particles have an average thickness of between 10 nm and 100 ?m inclusive, and the average value of the ratio of the average length within the flat surface with respect to the thickness is between 5 and 10,000 inclusive.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: March 7, 2023
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hiroaki Kinouchi, Tomohiro Suetsuna, Takahiro Kawamoto, Yasuyuki Hotta
  • Patent number: 11587705
    Abstract: Provided is an electromagnetic-wave absorber composition and an electromagnetic-wave absorber that can favorably absorb a plurality of electromagnetic waves of different frequencies in a high frequency band in or above the millimeter-wave band. The electromagnetic-wave absorber composition includes a magnetic iron oxide that magnetically resonates at a high frequency in or above the millimeter-wave band and a resin binder. The electromagnetic-wave absorber composition has two or more extrema separated from each other on a differential curve obtained by differentiating a magnetic property hysteresis loop at an applied magnetic field intensity of from 16 kOe to ?16 kOe. The electromagnetic-wave absorber includes an electromagnetic-wave absorbing layer formed of the above-described electromagnetic-wave absorber composition.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: February 21, 2023
    Assignee: Maxell, Ltd.
    Inventors: Masao Fujita, Toshio Hiroi
  • Patent number: 11584887
    Abstract: Provided are an inorganic fluorescent nanoparticle composite that can suppress the degradation of inorganic fluorescent nanoparticles when sealed in glass and a wavelength conversion member using the inorganic fluorescent nanoparticle composite. An inorganic fluorescent nanoparticle composite 1 is made up by including: an inorganic fluorescent nanoparticle 2; and an inorganic fine particle 3 deposited on a surface of the inorganic fluorescent nanoparticle 2.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: February 21, 2023
    Assignee: NIPPON ELECTRIC GLASS CO., LTD.
    Inventor: Tamio Ando
  • Patent number: 11588076
    Abstract: A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi4Al3N9, SrSiAl2O3N2, BaSi2N2O2, ALi3XO4, M*(1?x*?y*?z*) Z*z*[A*a*B*b*C*c*D*d*E*e*N4-n*On*], and combinations thereof.
    Type: Grant
    Filed: April 17, 2018
    Date of Patent: February 21, 2023
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Ion Stoll, Alexander Baumgartner, Alexander Wilm
  • Patent number: 11573176
    Abstract: A luminescent material is disclosed with emission in the near infrared wavelength range, the luminescent material including Sc1-x-yAyRE:Crx, wherein MO=P3O9, BP3O12, SiP3O12; A=Lu, In, Yb, Tm, Y, Ga, Al, where 0?x?0.75, 0?y?0.9. A wavelength converting structure including the luminescent phosphor is also disclosed.
    Type: Grant
    Filed: March 24, 2020
    Date of Patent: February 7, 2023
    Assignee: Lumileds LLC
    Inventor: Peter Josef Schmidt
  • Patent number: 11566174
    Abstract: A phosphor is specified. The phosphor has the general molecular formula: (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, -E=Eu, Ce, Yb and/or Mn, XC=N and XD=C. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; 3.5?u?4; 3.5?v?4; (?0.2)?w?0.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: January 31, 2023
    Assignee: OSRAM OLED GMBH
    Inventors: Markus Seibald, Dominik Baumann, Tim Fiedler, Stefan Lange, Hubert Huppertz, Daniel Dutzler, Thorsten Schroeder, Daniel Biehler, Simon Peschke
  • Patent number: 11569013
    Abstract: This ferrite magnet has a magnetoplumbite structure and is characterized in that, when representing the composition ratios of the total of each metal element A, R, Fe and Me with expression (1) A1-xRx(Fe12-yMey)z, the Fe2+ content (m) in the ferrite magnet is greater than 0.1 mass % and less than 5.4 mass % (in expression (1), A is at least one element selected from Sr, Ba, Ca and Pb; R is at least one element selected from the rare-earth elements (including Y) and Bi, and includes at least La, and Me is Co, or Co and Zn). The invention makes it possible to achieve a ferrite magnet with increased Br.
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: January 31, 2023
    Assignee: TDK CORPORATION
    Inventors: Junnichi Nagaoka, Hitoshi Taguchi
  • Patent number: 11566175
    Abstract: A wavelength converter 100 includes: a first phosphor 1 composed of an inorganic phosphor activated by Ce3+; and a second phosphor 2 composed of an inorganic phosphor activated by Ce3+ and different from the first phosphor. At least one of the first phosphor and the second phosphor is particulate. The first phosphor and the second phosphor are bonded to each other by at least one of a chemical reaction in a contact portion between the compound that constitutes the first phosphor and a compound that constitutes the second phosphor and of adhesion between the compound that constitutes the first phosphor and the compound that constitutes the second phosphor.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: January 31, 2023
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Shozo Oshio, Takeshi Abe
  • Patent number: 11560516
    Abstract: An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.
    Type: Grant
    Filed: October 2, 2019
    Date of Patent: January 24, 2023
    Assignee: Mitsubishi Chemical Corporation
    Inventor: Byungchul Hong
  • Patent number: 11555148
    Abstract: An ultraviolet light emitting phosphor for mercury-free lamps is a phosphor composed of a phosphate containing at least two metal elements selected from the group consisting of group 13 elements and lanthanoid series elements, and is excited to emit ultraviolet by irradiation with vacuum ultraviolet rays or an electron beam.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: January 17, 2023
    Assignee: DYDEN CORPORATION
    Inventors: Tanamachi Nobutsugu, Tanno Hiroaki, Fukushima Tomoko, Nishihara Terutaka
  • Patent number: 11549057
    Abstract: A quantum dot luminescent material and a method of producing thereof. The quantum dot luminescent material includes a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, and an electron injection layer. The quantum dot luminescent layer is located on the hole transport layer, and the quantum dot luminescent layer includes uniformly distributed perovskite nanodots.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: January 10, 2023
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventors: Bo He, Yongwei Wu, Pei Jiang
  • Patent number: 11549009
    Abstract: The present invention relates to a composition for 3D printing, a 3D printing method using the same, and a three-dimensional comprising the same, and provides a composition for 3D printing capable of realizing a three-dimensional shape having precision and excellent curing stability.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: January 10, 2023
    Inventors: Sang Bum Ahn, Jin Kyu Lee, Hyeok Jeong