Abstract: A wavelength beam combining device includes: a light source unit comprising a plurality of laser light sources, each being configured to emit a laser beam with a predetermined wavelength width; a light condensing member configured to condense the laser beams emitted from the light source unit; a diffraction grating on which the laser beams condensed by the light condensing member are incident; a resonator mirror disposed in an optical path of a diffracted beam from the diffraction grating; and an output control unit configured to turn off, among the plurality of laser light sources, at least laser light sources located farthest from an optical axis of the light condensing member, to reduce an output of the wavelength beam combining device relative to an output of the wavelength beam combining device when all the plurality of laser light sources are turned on.

Abstract: A light source device includes: a base comprising a bottom portion and a peripheral wall portion; a semiconductor laser located on the bottom portion; a cap connected to an upper surface of the peripheral wall portion, wherein the cap and the base define a sealed space; a translucent portion located in the peripheral wall portion or the cap, the translucent portion being configured to transmit a beam emitted from the semiconductor laser; and first and second lead terminals located in the sealed space and crossing from a first inner surface of the peripheral wall portion to a second inner surface of the peripheral wall portion. The semiconductor laser is located between the two lead terminals. The translucent portion is located on an optical axis of the beam emitted from the semiconductor laser.

Abstract: A method, apparatus and system for coherent beam combining (CBC) in high energy fiber laser (HEL) systems include generating a reference interference pattern of a signal source including at least two single-mode optical signals, capturing and evaluating the reference interference pattern, maximizing an intensity of the selected area of the captured, reference interference pattern, increasing a linewidth of the optical signals generating the reference interference pattern until the reference interference pattern is degraded, and adjusting a delay time of one of the at least two single-mode optical signals until the reference interference pattern is recovered, by adjusting a value of a delay of a delayed RF signal with a broaden linewidth to a respective EO linewidth broadening modulator in at least one channel of the at least two single-mode optical signals while evaluating the interference pattern on a display device.

Abstract: A laser apparatus includes a controller that selects one of a first gas control and a second gas control based on gas pressure measured by a pressure sensor. The first gas control causes at least one of first laser gas and second laser gas is supplied to a chamber such that the gas pressure in the chamber after the first gas control is higher than the gas pressure in the chamber before the first gas control. The second gas control causes at least the first laser gas is supplied to the chamber and causes a part of the laser gas in the chamber is exhausted such that a difference between the gas pressure in the chamber before the second gas control and the gas pressure in the chamber after the second gas control is smaller than a difference between the gas pressure in the chamber before the first gas control and the gas pressure in the chamber after the first gas control.

Abstract: A system is disclosed which includes a laser which has a calibrated optical power and a calibrated tolerance. The system includes a driving circuit configured to generate a first current pulse and a second current pulse. The system includes a primary observer module configured to observe a first and second primary input. The system includes one or more secondary observer modules configured to observe one or more first and one or more second secondary inputs. The system includes a controller communicatively coupled to the laser, driving circuit, primary observer module, and the one or more secondary observer modules. The controller is configured to receive an information packet, calculate an optical power, determine a deviation of the optical power from the calibrated optical power, compare the deviation with the calibrated tolerance, and perform an action if the deviation exceeds the calibrated tolerance.

Abstract: A method for preparing a stencil to receive a plurality of IC units, the method comprising the steps of: providing a metal substrate having an array of apertures; applying an adhesive surface to said substrate; removing portions of said adhesive surface corresponding to the apertures in the metal substrate.

Abstract: A laser apparatus includes: a cooling capacity control means which controls the cooling capacity of a heat receiving/cooling unit; a surrounding member which surrounds a dew condensation prevention target unit including a heat generating unit and which reaches a surrounding member equilibrium temperature higher than the maximum dew point temperature within a housing as the temperature of the heat generating unit is increased; and a temperature detection means which detects the temperature of the surrounding member, a control unit compares, while a current output command is being output to a laser power supply unit, a surrounding member temperature with a switching temperature previously set lower than the surrounding member equilibrium temperature and when the surrounding member temperature is lower than the switching temperature, the control unit controls the cooling capacity control means such that the cooling capacity of the heat receiving/cooling unit is a low level whereas when the surrounding member tem

Abstract: A system includes a master oscillator configured to generate a low-power optical beam. The system also includes a planar waveguide (PWG) amplifier having one or more laser diode pump arrays, a planar waveguide, and a light pipe. The one or more laser diode pump arrays are configured to generate pumplight. The planar waveguide is configured to generate a high-power optical beam using the low-power optical beam and the pumplight. The light pipe is configured to substantially homogenize the pumplight and to inject the homogenized pumplight into the planar waveguide. The light pipe is also configured to inject the low-power optical beam into the planar waveguide.

Abstract: A waveguide-coupled Silicon Germanium (SiGe) photodetector. A p-n silicon junction is formed in a silicon substrate by an n-doped silicon region and a p-doped silicon region, a polysilicon rib is formed on the silicon substrate to provide a waveguide core for an optical mode of radiation, and an SiGe pocket is formed in the silicon substrate along a length of the polysilicon rib and contiguous with the p-n silicon junction. An optical mode of radiation, when present, substantially overlaps with the SiGe pocket so as to generate photocarriers in the SiGe pocket. An electric field arising from the p-n silicon junction significantly facilitates a flow of the generated photocarriers through the SiGe pocket. In one example, such photodetectors have been fabricated using a standard CMOS semiconductor process technology without requiring changes to the process flow (i.e., “zero-change CMOS”).

Abstract: An optical device includes a first substrate, having first and second surfaces, and a second substrate having a third surface. The first substrate includes: a laser unit, having an active layer and emitting light into the first substrate from the active layer; a reflecting mirror, having a plane obliquely intersecting an optical axis of light emitted from the laser unit, and being formed on the first surface so as to reflect the light toward the second surface; and a convex lens, being formed in a region on the second surface, the region including an optical axis of the light reflected by the reflecting mirror. The second substrate is provided with a grating coupler and an optical waveguide on the third surface, the optical waveguide having light incident on the grating coupler propagating therethrough.

Abstract: An optical transmitter and a method for driving the optical transmitter include emitting an optical signal using a laser having a lasing cavity with a first section and a second section, performing, using a first heater thermally coupled to the first section, a first temperature control on the first section using a first control signal, and performing, using a second heater thermally coupled to the second section, a second temperature control on the second section using a second control signal. The first temperature control is independent from the second temperature control.

Abstract: A laser oscillation device includes a laser oscillation unit, which is a laser oscillation part that generates multiple first laser beams having different wavelengths from one another, multiple sensors having different sensitivity characteristics from one another each representing light-receiving sensitivity for the wavelengths of the multiple first laser beams, to each output first voltages dependent on outputs of the multiple first laser beams. The laser oscillation device includes a computing unit that corrects the multiple first voltages using the sensitivity characteristics of the multiple sensors, and controls the laser oscillation unit based on multiple second voltages which correspond to multiple first voltages obtained after the correction.

Abstract: A method for monolithically depositing a monocrystalline IV-IV layer that glows when excited and that is composed of a plurality of elements of the IV main group, in particular a GeSn or Si—GeSn layer, the IV-IV layer having a dislocation density less than 6 cm?2, on an IV substrate, in particular a silicon or germanium substrate, including the following steps: providing a hydride of a first IV element (A), such as Ge2H6 or Si2H6; providing a halide of a second IV element (B), such as SnCl4; heating the substrate to a substrate temperature that is less than the decomposition temperature of the pure hydride or of a radical formed therefrom and is sufficiently high that atoms of the first element (A) and of the second element (B) are integrated into the surface in crystalline order, wherein the substrate temperature lies, in particular, in a range between 300° C. and 475° C.

Abstract: A laser chamber may include a first discharge electrode, a second discharge electrode, a fan making a laser gas flow through a discharge space between the first and second discharge electrodes, a first insulating member disposed on upstream side and downstream side of the first discharge electrode in the laser gas flow, a first metal damper member disposed on upstream side of the second discharge electrode and a second insulating member disposed on downstream side of the second discharge electrode in the laser gas flow, and a second metal damper member disposed on downstream side of the second insulating member in the laser gas flow. In a boundary portion between the second metal damper member and the second insulating member, a first discharge space side surface of the second metal damper member may be located further toward the opposite side to the discharge space than a second discharge space side surface of the second insulating member.

Abstract: A semiconductor laser (100) and a method for processing the semiconductor laser are provided, so that modulation bandwidth can be increased.

Abstract: A method includes forming a first semiconductor device, wherein the first semiconductor device includes a top surface and a bottom surface, and wherein the first semiconductor device includes a metal layer having an exposed first surface. The method also includes forming a Electromagnetic Interference (EMI) layer over the top surface and sidewalls of the first semiconductor device, wherein the EMI layer electrically contacts the exposed first surface of the metal layer. The method also includes forming a molding compound over the EMI layer.

Abstract: Disclosed herein is a semiconductor laser device that has a higher heat dissipation property, comprising: a base; a block protruding from a first surface of the base; a laser chip being joined onto a side face rising upward from the first surface, and allowing heat generated to be transferred to the block; a cap covering the block and be fixed on the first surface; a window provided in the cap and allowing the light emitted from the laser chip to pass through; at least one lead pin penetrating the base, one end of the lead pin protruding inside the cap, and any of the lead pin being positioned at an opposite side of the block with respect to the laser chip; and a pinless region extending in a range of the base corresponding to a rear side of the block and provided with none of pins including the lead pin.

Abstract: A laser for high power applications. The laser is a lamp driven slab design with a face to face beam propagation scheme and an end reflection that redirects the amplified radiation back out the same input surface. Also presented is a side to side larger amplifier configuration, permitting very high average and peak powers due to the electrical efficiency of absorbing energy into the crystal, optical extraction efficiency, and scalability of device architecture. Cavity filters adjacent to pump lamps convert the unusable UV portion of the pump lamp spectrum into light in the absorption band of the slab laser thereby increasing the overall pump efficiency. The angle of the end reflecting surface is changed to cause the exit beam to be at a different angle than the inlet beam, thereby eliminating the costly need to separate the beams external to the laser with the subsequent loss of power.

Abstract: A method for operating a laser device, including providing a laser pulse in a resonator so that the laser pulse circulates in the resonator, the laser pulse having a carrier wave; determining an offset frequency (f0) of the frequency comb corresponding to the laser pulse, the frequency comb having a plurality of laser modes (fm) at a distance (frep) from one another, the frequencies of which can be described by the formula: fm=m*frep+f0, m being a natural number, and varying the offset frequency (f0) by varying a geometric phase (??) that is imparted to the carrier wave of the laser pulse per resonator circulation.

Abstract: A transistor (100), including a planar semiconducting substrate (36), a source (42) formed on the substrate, a first drain (102) formed on the substrate, and a second drain (104) formed on the substrate in a location physically separated from the first drain. At least one gate (38, 40) is formed on the substrate and is configured to selectably apply an electrical potential to the substrate in either a first spatial pattern, which causes a first conductive path (62) to be established within the substrate from the source to the first drain, or a second spatial pattern, which causes a second conductive path to be established within the substrate from the source to the second drain.