Abstract: The present application discloses an array substrate. The array substrate includes a sub-pixel having a first light emitting area and a second light emitting area structurally different from the first light emitting area. The sub-pixel includes a first electrode on a base substrate; a first light emitting layer in the first light emitting area and a second light emitting layer in the second light emitting area, the first light emitting layer and the second light emitting layer made of a same material and on a side of the first electrode distal to the base substrate; and a first tuning layer between the first light emitting layer and the first electrode in the first light emitting area.

Abstract: A thin film transistor and a preparation method thereof, an array substrate and a display apparatus are provided. The preparation method includes an operation of forming a low temperature poly silicon active layer; a substrate has a first region and a second region; and the step includes: forming a buffer layer on the first region and the second region of the substrate, the buffer layer having a thickness at a portion corresponding to the first region greater than that at a portion corresponding to the second region; or, forming the buffer layer on the first region of the substrate; forming an amorphous silicon layer on the buffer layer; performing laser crystallization processing on the amorphous silicon layer so as to convert the amorphous silicon layer into a poly silicon layer; and removing the poly silicon layer on the second region, and forming the low temperature poly silicon active layer on the first region.

Abstract: A Kerr Mode Locked (“KLM”) laser is configured with a resonant cavity. The gain medium, selected from polycrystalline transition metal doped II-VI materials (“TM:II-VI), is cut at a normal angle of incidence and mounted in the resonant cavity so as to induce the KLM laser to emit a pulsed laser beam at a fundamental wavelength. The pulses of the emitted laser beam at the fundamental wavelength each vary within a 1.8-8 micron (“?m”) wavelength range, have a pulse duration equal to or longer than 30-35 femtosecond (“fs”) time range and an average output power within a mW to about 20 watts (“W”) power range. The disclosed resonant cavity is configured with a plurality of spaced apart reflectors, two of which flank and are spaced from the gain medium which is pumped to output a laser beam at a fundamental wavelength and its higher harmonic wavelengths. The gain medium is mounted on a translation mechanism operative to controllably displace the gain medium along a waist of the laser beam.

Abstract: The circuit includes a first transistor; a second transistor whose first terminal is connected to a gate of the first transistor for setting the potential of the gate of the first transistor to a level at which the first transistor is turned on; a third transistor for setting the potential of a gate of the second transistor to a level at which the second transistor is turned on and bringing the gate of the second transistor into a floating state; and a fourth transistor for setting the potential of the gate of the second transistor to a level at which the second transistor is turned off. With such a configuration, a potential difference between the gate and a source of the second transistor can be kept at a level higher than the threshold voltage of the second transistor, so that operation speed can be improved.

Abstract: Provided is an electrochemical luminescent cell 10 having a luminescent layer 12 and electrodes 13, 14 provided on each surface of the luminescent layer 12. The luminescent layer 12 comprises an organic polymeric luminescent material and a combination of at least two organic salts. In particular, the luminescent layer preferably comprises a combination of at least two types of ionic liquids represented by formula (1) (wherein R1, R2, R3 and R4 each represent an optionally-substituted alkyl group, alkoxy alkyl group, trialkylsilylalkyl group, alkenyl group, alkynyl group, aryl group or heterocylic group. R1, R2, R3 and R4 may be the same or different. M represents N or P. X? represents an anion.

Abstract: A method for varying the wavelength of a free electron laser (FEL) by applying an energy dither to the charged particles supplying the FEL. Bunches of charged particle beams are accelerated by cavities that are operated at a harmonic of the bunch repetition rate. The method involves adding one or more secondary radiofrequency accelerator cavities after the primary beam transport and near the wiggler to apply a fluctuation between individual bunches with a pseudo-random distribution. The secondary radiofrequency accelerator cavities provide fine variations of the beam energy about a nominal operating point. Operating a free electron laser (FEL) with a 1% change in the electron beam energy via the added secondary cavities will result in a 2% wavelength variation of the FEL output.

Abstract: A laser diode control circuit includes: a LD driver circuit for driving a laser diode; a direct current component remover circuit for generating a feedback signal based on a detected signal; a first conversion and filter circuit for generating a first filtered signal based on the feedback signal; a first rectifier for rectifying the first filtered signal to generate a first rectified signal; a reference signal generator for generating a reference signal; a second conversion and filter circuit for generating a second filtered signal based on the reference signal; a second rectifier for rectifying the second filtered signal to generate a second rectified signal; a rectified signals processing circuit for generating a processed signal based on the first and second rectified signals; and a comparator for generating a comparison signal based on the processed signal.

Abstract: A laser structure includes a substrate, a buffer layer formed on the substrate and a light emitting diode (LED) formed on the buffer layer. A photonic crystal layer is formed on the LED. A monolayer semiconductor nanocavity laser is formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED, wherein the LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.

Abstract: A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

Abstract: In at least one illustrative embodiment, a laser may include a ceramic body defining a chamber containing a laser gas. The chamber may include first and second slab waveguide sections extending along parallel first and second axes and a third slab waveguide section extending along a perpendicular third axis. Respective first ends of the first and second slab waveguide sections may be positioned adjacent opposite ends of the third slab waveguide section.

Abstract: A method for applying an energy dither to a charged particle beam in order to vary the wavelength of the charged particle beam. Bunches of charged particle beams are accelerated by cavities that are operated at a harmonic of the bunch repetition rate. One or more secondary radiofrequency accelerator cavities are added near the wiggler after the primary beam transport to apply a fluctuation between individual bunches with a pseudo-random distribution. The secondary radiofrequency accelerator cavities provide fine variations of the beam energy about a nominal operating point. Operating a free electron laser (FEL) with a 1% change in the electron beam energy via the secondary cavity will result in a 2% wavelength variation of the FEL output.

Abstract: A tunable laser configured in a small package subassembly including a gain chip positioned in the interior space between first and second tunable filter subassemblies. The tunable laser is packaged in either a rectangular or cylindrical housing, with an electrical input interface positioned at one end of the housing.