Abstract: A circuit board processing system includes a wash tank configured to contain cleaning fluid, and a positioning subsystem configured to immerse a set of circuit boards into the wash tank. The system further includes a flow control subsystem having (i) a first set of nozzles disposed within the wash tank, (ii) a second set of nozzles disposed within the wash tank, and (iii) a controller. The controller is configured to direct the cleaning fluid through the first set of nozzles to provide a flow of the cleaning fluid in a first direction relative to the set of circuit boards. The controller is further configured to direct the cleaning fluid through a second set of nozzles to provide a flow of the cleaning fluid in a second direction relative to the set of circuit boards after providing the flow of the cleaning fluid in the first direction.

Abstract: A system for recycling reusable resin mold products recovered from discarded apparatuses is disclosed. This recycling system includes a crushing system for crushing resin mold products one kind by one kind into crushed resinous pieces and packing the same in a bag, a classification system for irradiating a light beam to the resin in the bag and classifying the bags into respective kinds of resins based on a reflected beam therefrom, a cleaning system for separately cleaning the respective kind of crushed resinous pieces taken out of the bag to remove foreign matters adhered onto the surfaces of the crushed resinous pieces therefrom, and a recovery system for recovering the cleaned crushed resinous pieces.

Abstract: A method of remote plasma cleaning a processing chamber of CVD equipment, which has high cleaning rates, low cleaning operational cost and high efficiency, is provided. The method comprises supplying cleaning gas to the remote plasma-discharge device; activating the cleaning gas inside the remote plasma-discharge device; and bringing the activated cleaning gas into the processing chamber and which is characterized in that a mixed gas of F2 gas and an inert gas are used as the cleaning gas. A concentration of the F2 gas is 10% or higher. The F2 gas, which is a cleaning gas, is supplied to the remote plasma-discharge device from an F2 gas cylinder by diluting F2 gas at a given concentration by an inert gas.

Abstract: A lift-off procedure is provided which enables prevention of damage to a wiring pattern caused by contact of a metal being peeled off from a wafer with a wiring pattern at a time of lift-off procedure. A wafer having a surface on which a pattern is formed which contains a pattern portion to be removed is soaked into a chemical liquid at an angle at which the surface faces downward.

Abstract: A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.

Abstract: The present invention comprises methods and compositions for affecting indoor air quality, such as by reducing particulates in indoor air and providing allergen control comprising using surfactant-free cleaning compositions to remove particulate matter such as soils and stains from fibers and surfaces comprising fibers such as indoor carpeting and upholstery, and to prevent redeposition of particles and other soil or stain components on indoor environmental surfaces.

Abstract: This invention provides a cleaning method of silicon wafer for obtaining a silicon wafer in which micro roughness thereof under spatial frequency of 20/?m is 0.3 to 1.5 nm3 in terms of power spectrum density, by passing a process of oxidizing the silicon wafer with ozonized water and a process of cleaning said oxidized silicon wafer with hydrofluoric acid. Consequently, it is possible to remove surface adhering pollutant such as particles and metallic foreign matter with the surface structure of silicon wafer flattened up to atomic level by annealing maintained.

Abstract: In a dishwasher having a washing chamber capable of accommodating upper and lower racks, a detergent dispensing assembly includes a housing defining a compartment for receiving detergent. A lid is pivotally connected to the housing for selectively pivoting between closed and dispensing positions. A shield, which is spaced away from the lid, extends in front of the lid to ensure that an object within the washing chamber does not prevent the lid from freely moving between the closed and dispensing positions during a wash cycle.

Abstract: A semiconductor processing chamber having a silicon containing pre-coat is provided. The chamber includes a top electrode in communication with a power supply and a processing chamber defined within a base, a sidewall extending from the base, and a top disposed on the sidewall. The processing chamber has an outlet enabling removal of fluids within the processing chamber and includes a substrate support where an outer surface of the substrate support coated with the removable silicon containing coating, wherein the silicon containing coating is a compound consisting essentially of silicon and one of bromine and chlorine. The chamber includes an inner surface defined by the base, the sidewall and the top, where the inner surface is coated with a removable silicon containing coating.

Abstract: A wafer chuck is configured to hold a wafer efficiently for spin process cleaning of wafer edges and back sides. A first group of retractable tips extend to hold the wafer during a first portion of the cleaning period. A second group of retractable tips extend to hold the wafer during a second portion of the cleaning period. Residues left between the tips and the wafer edge areas during the first portion of the cleaning period are removed during the second portion. The change from the first group of tips to the second group of tips occurs while the wafer is rotating.

Abstract: An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.

Abstract: A method for removing polymer containing residues from a semiconductor wafer including metal containing features including providing a semiconductor wafer having a process surface including metal containing features said process surface at least partially covered with polymer containing residues; and, subjecting the semiconductor wafer to a series of cleaning steps including sequentially exposing the process surface to at least one primary solvent and at least one intermediate solvent the at least one intermediate solvent comprising an ammonium nitrate containing solution.

Abstract: A method and apparatus for connecting an engine flushing system for flushing the lubrication system of an engine having a detachable engine lubricant filter contained within a casing is disclosed, which may comprise at least one flushing system connection unit adapted to connect the flushing system to at least one of the engine lubricant inlet portion and engine lubricant outlet portion of the detachable lubricant filter through the casing of the detachable engine lubricant filter. The flushing connection unit may comprise a first flushing connection unit adapted to connect the flushing system to the engine lubricant inlet portion and engine lubricant outlet portion of the detachable lubricant filter, through the casing of the detachable engine lubricant filter; and a second flushing connection unit adapted to connect the flushing system to the lubrication system of the engine through an opening utilized for mechanically measuring the level of lubricant in the lubrication system of the engine.

Abstract: A high pressure water stream (14) is discharged onto a surface to be cleaned. An ozone/water stream (16) is discharged on the same surface for sanitizing the surface. The high pressure water and ozone/water streams (14, 16) are discharged simultaneously along closely adjacent paths that are either parallel (FIG. 3) or concentric (FIG. 2). The water pressure is at least about 100 p.s.i. and is preferably between 100 p.s.i. and 1000 p.s.i. The nozzles that discharge the streams (14, 16) may be movable relative to the object(s) that receives the high pressure water and ozone/water (FIG. 1) Or, they may be fixed and the object may be movable relative to them (FIG. 4).

Abstract: Methods and compositions for on-line cleaning of internal surfaces of selected sections of a hydrocarbon fuel burning gas turbine and associated heat recovery equipment, during operation. Cleaning solutions containing graphite and/or molybdenum-based particles and oil soluble corrosion inhibitors, aromatic solvents, and surfactants are selectively introduced directly into the combustion chamber (combustor) of the gas turbine, into the fuel stream, water washing system, or the combustion air system (hot gas path). The cleaning process dislodges unwanted ash deposit buildup and, thereby restores the gas turbine to rated power. When introduced into the compressor section, the particles impinge on the metal surfaces, cleaning them prior to entering the hot gas section where the process may be repeated. They may also be carried through the exhaust to additionally clean attendant heat recovery equipment, if present.

Abstract: Disclosed is a substrate processing method including a substrate rotating step for rotating a substrate with the substrate held almost horizontally within a chamber; a peripheral edge processing step for discharging a processing liquid to a lower surface of the substrate rotated in the substrate rotating step and causing the processing liquid to flow around an upper surface of the substrate at a peripheral edge thereof from the lower surface of the substrate to process the peripheral edge of the upper surface of the substrate in the chamber; and a both-surface processing step for discharging the processing liquid to both the surfaces of the substrate rotated in the substrate rotating step to process both the surfaces of the substrate in the chamber.

Abstract: Methods for cleaning a chamber of semiconductor device manufacturing equipment are disclosed. An illustrated method comprises supplying cleaning gas into a chamber to start a cleaning process; detecting the intensity of a wavelength for the cleaning gas; fixing a valve at a predetermined position to control the pressure in the chamber; detecting the pressure in the chamber during some period of the cleaning time, the cleaning time being from the beginning of the cleaning process to the time when the intensity of the wavelength is settled at a predetermined value; and stopping supplying the cleaning gas into the chamber to complete the cleaning process.

Abstract: An apparatus and a method is provided for decoupling a cavitation in a liquid from an acoustic energy used to induce the cavitation. Broadly speaking, a pressure adjustment is used to control an acoustically induced cavitation in a liquid contained within a wafer cleaning apparatus, wherein the cavitation is defined by an amount and a size of gas bubbles. An increase in a pressure within the wafer cleaning apparatus results in a suppression of the cavitation. Conversely, a decrease in the pressure within the wafer cleaning apparatus results in an enhancement of the cavitation. Thus, independent control of the cavitation is provided without regard to the acoustic energy or a chemistry of the liquid. Controlling the cavitation allows for a safe and efficient wafer cleaning operation that can be customized to address specific requirements dictated by a particular wafer configuration.

Abstract: A washing method has a nonaqueous washing process of washing an object to be washed using a nonaqueous solution, an intermediate washing process of washing the object to be washed using a solution having solubility relative to both an aqueous solution and the nonaqueous solution after said nonaqueous washing process; and an aqueous washing process of washing the object to be washed with the aqueous solution after said intermediate washing process. When an intermediate washing process is performed between the nonaqueous washing process and the aqueous washing process, the nonaqueous solution adhered to the object to be washed in the nonaqueous washing process is removed in the intermediate washing process, and replaced by a solution having solubility relative to both the nonaqueous solution and the aqueous solution, so as to prevent the nonaqueous solution from being introduced into the aqueous solution used in the aqueous washing process.

Abstract: The invention relates to an apparatus for scarifying the interior surface of a sewer pipe. The apparatus consists of a chassis, with an outer frame coupled to the chassis and an inner frame slidably coupled to the outer frame. Two extendible arms are attached to opposite sides of the inner frame. Each arm has a nozzle assembly mounted on the end, each nozzle assembly having a plurality of fluid jets for spray water onto the interior surface of the pipeline. The nozzle assembly may be pivotally mounted to allow for greater control of the fluid jets. The apparatus further includes a propulsion system for movement of the apparatus along the pipeline.