Abstract: A method and system for the megasonic cleaning of one or more substrates that reduces damage to the substrate(s) resulting from the megasonic energy. The substrates are supported in a process chamber and contacted with a cleaning solution comprising a cleaning liquid having carbon dioxide gas dissolved in the cleaning liquid in such amounts that the carbon dioxide gas is at a supersaturated concentration for the conditions within the process chamber. Megasonic energy is then transmitted to the substrate. The cleaning solution provides protection from damage resulting from the application of megasonic/acoustical energy. In another aspect, the invention is a system for carrying out the method. The invention is not limited to carbon dioxide but can be used in conjunction with any gas that, when so dissolved in a cleaning liquid, protects substrates from being damaged by the application of megasonic/acoustical energy.

Abstract: A method is provided for treating an object. In this method, a treating chemical is introduced to a bath under conditions effective to at least partially envelop the object to be treated in eddy currents of the bath liquid, followed by introducing non-treating liquid into the bath under conditions effective to at least partially envelop the object to be treated in eddy currents of the bath liquid. An apparatus for carrying out this method is also provided. This method is particularly beneficial for objects used in precision manufacturing by treatment with solutions, such as semiconductor wafers or similar substrates.

Abstract: An active rinse shield designed to protect electrofill chemical baths from excessive dilution during rinse sprays on the semiconductor wafer. The shield uses overlapping blades to cover the bath, making a physical barrier between the bath chemistry and the wafer rinse water. The blades are interconnecting ribs that actuate around a common pivot axis. A linear mechanical actuator controls the blade movement, moving the top-most blade, which in turn, moves an adjacent lower blade. Each upper blade is interconnected to an adjacent lower blade by upper and lower ledges, a pivot boss and interlocking cut, and a curved ledge on each blade's body surface. The interconnecting features allow the blades to move one another out for extension or in for retraction. The interlocking blades are inclined above one another, forming grooves to redirect the rinse water away from the chemical bath.

Abstract: A semiconductor device is inspected and cleaned by applying a vacuum to the area in which the semiconductor device is positioned. Micro-sized particulates that are brushed off the semiconductor device during cleaning are drawn off by the vacuum.

Abstract: The present invention relates to process and methods, as well as compositions and systems for use in laundering smoke-damaged garments. In particular, the present invention utilizes ozonated water to treat the smoke-damaged garments.

Abstract: A cleanling apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.

Abstract: A method for cleaning a manufacturing apparatus, includes introducing a cleaning gas including fluorine so as to flow from upstream toward an outlet port in a reaction chamber; and flowing a protective gas which reacts with the fluorine from a vicinity of the outlet port of the reaction chamber as an introduction position.

Abstract: There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. A mixture of H2 and N2 gas is used as a first processing gas. By absorbing potential in a grounded grid or baffle between a plasma generator and a substrate, only radicals are passed to the substrate, and HF gas is used as a second processing gas. Thus a native oxide layer, a chemical oxide layer, or a damaged portion formed on the silicon substrate during etching is removed in annealing step with H2 flow. The environment of a chamber is maintained constant by introducing a conditioning gas after each wafer process. Therefore, process repeatability is improved.

Abstract: Pluralities of ultrasonic transducers are arranged on the bottom wall of the cleaning tank. The output power of the ultrasonic oscillator is supplied to the transducers through the switching unit, which switches the drive mode between a first mode in which all the ultrasonic transducers are supplied with the output power and thus are excited, and a second mode in which only a part or parts of the ultrasonic transducers are supplied with the output power generated by the ultrasonic oscillator. The first mode is used when cleaning substrates not-resistant to vibration, and the second mode is used when cleaning substrates resistant to vibration.

Abstract: A wafer cleaning method and system including a combined high frequency signal, a low frequency signal, and in one embodiment a biased voltage signal, allows cleaning particles and impurities off of fine-structured wafers, through application of an acoustic field to the wafer through a cleaning liquid which fosters micro-bubble formation for effective cleaning while buffering micro-bubble growth which would otherwise damage the wafer.

Abstract: A method for manufacturing a group III nitride compound semiconductor device includes irradiating a surface of a wafer with ultraviolet rays to thereby clean a resist residue from the surface of the wafer, the surface including a group III nitride compound semiconductor. The ultraviolet rays cause a reaction of oxygen molecules to form stimulated oxygen atoms having a strong oxidative power at the surface.

Abstract: The present invention relates to methods and apparatuses for the use of atmospheric pressure non-thermal plasma to clean and sterilize the surfaces of liquid handling devices.

Abstract: The apparatus for cleaning a wafer includes an energy concentration relieving member positioned at the side of the wafer. An elongated portion of a probe extends over and substantially parallel to the wafer surface. A vibrator is attached to a rear end of the probe for vibrating the probe such that the elongated portion transfers acoustic vibrational energy to the wafer and dislodges debris.

Abstract: A high pressure water stream (14) is discharged onto a surface to be cleaned. An ozone/water stream (16) is discharged on the same surface for sanitizing the surface. The high pressure water and ozone/water streams (14, 16) are discharged simultaneously along closely adjacent paths that are either parallel (FIG. 3) or concentric (FIG. 2). The water pressure is at least about 100 p.s.i. and is preferably between 100 p.s.i. and 1000 p.s.i. The nozzles that discharge the streams (14, 16) may be movable relative to the object(s) that receives the high pressure water and ozone/water (FIG. 1) Or, they may be fixed and the object may be movable relative to them (FIG.

Abstract: A high pressure water stream(14) is discharged onto a surface to be cleaned. An ozone/water stream(16) is discharged on the same surface for sanitizing the surface. The high pressure water and ozone/water streams(14,16) are discharged simultaneously along closely adjacent paths that are either parallel (FIG. 3) or concentric (FIG. 2). The water pressure is at least about 100 p.s.i. and is preferably between 100 p.s.i. and 2000 p.s.i. The nozzles that discharge the streams (14,16) maybe movable relative to the object(s) that receives the high pressure water and ozone/water (FIG. 1). Or, they may be fixed and the object may be movable relative to them (FIG. 4).

Abstract: A high pressure water stream (14) is discharged onto a surface to be cleaned. An ozone/water stream (16) is discharged on the same surface for sanitizing the surface. The high pressure water and ozone/water streams (14, 16) are discharged simultaneously along closely adjacent paths that are either parallel (FIG. 3) or concentric (FIG. 2). The water pressure is at least about 100 p.s.i. and is preferably between 100 p.s.i. and 1000 p.s.i. The nozzles that discharge the streams (14, 16) may be movable relative to the object(s) that receives the high pressure water and ozone/water (FIG. 1) Or, they may be fixed and the object may be movable relative to them (FIG. 4).

Abstract: A method for spinning a wafer to enable rinsing and drying is provided. The method includes engaging the wafer at a wafer processing plane and spinning the wafer. The method further includes moving a wafer backside plate from a first position to a second position as spinning of the wafer proceeds to an optimum spinning speed. The second position defines a reduced gap between an under surface of the wafer and a top surface of the wafer backside plate. The method also includes repositioning the wafer backside plate from the second position to the first position as the spinning reduces in speed. The first position defines an enlarged gap to enable loading and unloading of the wafer from the engaged position.

Abstract: A substrate is cleaned by supplying an ultrasonically-agitated cleaning liquid onto the substrate from a nozzle provided above the substrate while spinning the substrate. The substrate being cleaned is spun at a rotational speed of 2600 rpm or more and 3500 rpm or less, or at a rotational speed of 260×V/D (rpm) or more and 350×V/D (rpm) or less, where D (mm) is a diameter of the nozzle and V (mm/sec) is a moving velocity of the nozzle.

Abstract: Organic matter and metal impurities present on the surface of a photomask are removed. Foreign matter still adhering to the surface of the photomask is removed with H2 gas dissolved water. The photomask is dried. Thus provided is a method of washing a photomask in a manner which permits attaining an effect of removing foreign matter equivalent or superior to that of a conventional method with a small amount of chemical solution and reducing the amounts of chemicals and high purity water.

Abstract: Described are methods, systems, and chemistries for cleaning various components of semiconductor process equipment. A method in accordance with one embodiment cleans articles with differently contaminated interior and exterior surfaces by using those articles to separate a cleaning vessel into separate chambers, one chamber for the interior surface and one for the exterior surface. Different chemistries are then applied to the differently contaminated surfaces. This embodiment reduces the required volume of etchant, and consequently saves the cost, treatment, and disposal of toxic chemicals. One embodiment further reduces the requisite etchant volume using one or more volume-displacement elements that displace some of the etchant volume.