Abstract: An etching method includes disposing a target substrate within a chamber. The target substrate has a first silicon oxide film formed on a surface of the target substrate by a chemical vapor deposition method or an atomic layer deposition method, a second silicon oxide film that includes a thermally-oxidized film and a silicon nitride film. The second silicon oxide film and the silicon nitride are formed adjacent to the first silicon oxide film. The etching method further includes supplying an HF gas and an alcohol gas or water vapor into the chamber to selectively etch the first silicon oxide film with respect to the second silicon oxide film and the silicon nitride film.

Abstract: An apparatus for removing a coating from a lengthwise section of an optical fiber includes a heater at least partially defining an elongate heating region configured for receiving the lengthwise section of the optical fiber, wherein the heater is configured for heating the heating region to a temperature above a thermal decomposition temperature of the at least one coating; a sensor configured for providing a signal indicative of explosive removal of the at least one coating from the lengthwise section of the optical fiber; and at least one device operatively associated with the sensor and the heater for receiving and processing the at least one signal from the sensor, and deactivating the heater. The at least one device may be configured for determining how much time passes between occurrence of the heater being deactivated and the at least one coating being removed from the lengthwise section of the optical fiber.

Abstract: A substrate processing apparatus and method includes, a plate that has a size equal to or larger than a principal face of the substrate, and has a horizontal and flat liquid holding face opposing the principal face of the substrate from below. A processing liquid supply unit supplies a processing liquid to the liquid holding face. A control unit controls the processing liquid supply unit and a movement unit to supply the processing liquid to the liquid holding face to form a processing liquid film, a contact step of bringing the principal face of the substrate and the liquid holding face close to each other to bring the principal face of the substrate into contact with the processing liquid film, and a liquid contact maintenance step of maintaining the processing liquid in contact with the principal face of the substrate.

Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device structure includes forming a film over a substrate. The semiconductor device structure includes forming a first mask layer over the film. The semiconductor device structure includes forming a second mask layer over the first mask layer. The second mask layer exposes a first portion of the first mask layer. The semiconductor device structure includes performing a plasma etching and deposition process to remove the first portion of the first mask layer and to form a protection layer over a first sidewall of the second mask layer. The first mask layer exposes a second portion of the film after the plasma etching and deposition process. The semiconductor device structure includes removing the second portion using the first mask layer and the second mask layer as an etching mask.

Abstract: A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is provided. The method includes exciting the plasma generating source with an RF signal having RF frequency. The method further includes pulsing the gas source, using at least a first gas pulsing frequency, such that a first process gas is flowed into the chamber during a first portion of a gas pulsing period and a second process gas is flowed into the chamber during a second portion of the gas pulsing period, which is associated with the first gas pulsing frequency. The second process gas has a lower reactant-gas-to-inert-gas ratio relative to a reactant-gas-to-inert-gas ratio of the first process gas. The second process gas is formed by removing at least a portion of a reactant gas flow from the first process gas.

Abstract: Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting a reference spectrum. The reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectrum is empirically selected for particular spectrum-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectrum-based endpoint logic. The method includes obtaining a current spectrum. The current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved. The determining is based on the reference and current spectra.

Abstract: A method of patterning a gate stack on a substrate is described. The method includes preparing a gate stack on a substrate, wherein the gate stack includes a high-k layer and a gate layer formed on the high-k layer. The method further includes transferring a pattern formed in the gate layer to the high-k layer using a pulsed bias plasma etching process, and selecting a process condition for the pulsed bias plasma etching process to achieve a silicon recess formed in the substrate having a depth less than 2 nanometer (nm).

Abstract: A substrate cleaning method includes: a first step in which a cleaning liquid is ejected from a nozzle N2 to a central portion of a wafer W; a second step in which a dry gas is ejected from a nozzle N3 to the central portion of the wafer W to form a dry area; a third step in which the cleaning liquid is ejected from the nozzle N2 while the nozzle N2 is moved from a central side of the wafer W to a peripheral side thereof; a fourth step in which a width of an intermediate area generated between a wet area and the dry area is acquired; and a fifth step in which, when the width of the intermediate area exceeds a predetermined threshold value, a process parameter is changed such that the width of the intermediate area becomes the threshold value or less.

Abstract: Provided is a cleaning solution and its applications. The cleaning solution comprises a mixture of a basic chemical compound and a solvent solution. In some embodiments, the basic chemical compound is tetramethylammonium hydroxide (TMAH) and the solvent solution includes a solution of water and at least one of propylene glycol ethyl ether (PGEE), propylene glycol monomethylether (PGME), and propylene glycol monomethylether acetate (PGMEA). The cleaning solution is effective in removing silicon-containing material off a surface of a system or a surface of a semiconductor substrate. In some embodiments, the system comprises a pipeline for delivering the silicon-containing material in semiconductor spin-coating processes. In some embodiments, the system comprises a drain for collecting waste fluid in semiconductor spin-coating processes.

Abstract: A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL and a portion of the magnetoresistive stack. The method can further include depositing a photoresist layer on the hard mask before the first etching process and removing the photoresist layer from the hard mask following the first etching process. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.

Abstract: A microelectronic method for etching a layer to be etched, including: modifying the layer to be etched from a surface of the layer to be etched and over a depth corresponding to at least a portion of thickness of the layer to be etched to form a film, with the modifying including implanting light ions into the layer to be etched; and removing the film includes a selective etching of the film relative to at least one layer underlying the film.

Abstract: A method for performing a Chemical Mechanical Polishing (CMP) process includes applying a CMP slurry solution to a surface of a hardened fluid material on a substrate, the solution comprising an additive to change a bonding structure on the surface of the hardened fluid material. The method further includes polishing the surface of the hardened fluid material with a polishing head.

Abstract: A method of etching exposed silicon on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a hydrogen-containing precursor. The combination reacts with the patterned heterogeneous structures to remove an exposed silicon portion faster than a second exposed portion. The silicon selectivity results from the presence of an ion suppressor positioned between the remote plasma and the substrate processing region. The methods may be used to selectively remove silicon faster than silicon oxide, silicon nitride and a variety of metal-containing materials. The methods may be used to remove small etch amounts in a controlled manner and may result in an extremely smooth silicon surface.

Abstract: A knife cleaner for a commercial kitchen is mounted on a countertop or prep table with suction cups or similar devices, and provides three separate compartments for washing, rinsing, and sanitizing solutions. A removable cap provides a channel guide leading downward into each of the three compartments. The wash channel guide provides scrub brush components to remove food particles and other debris. The cleaner is disassembled easily without tools for cleaning purposes.

Abstract: Method for preparing a particulate material including particles of an element of group IVa, an oxide thereof or an alloy thereof, the method including: (a) dry grinding particles from an ingot of an element of group IVa, an oxide thereof or an alloy thereof to obtain micrometer size particles; and (b) wet grinding the micrometer particles dispersed in a solvent carrier to obtain nanometer size particles having a size between 10 to 100 nanometers, optionally a stabilizing agent is added during or after the wet grinding. Method can include further steps of (c) drying the nanometer size particles, (d) mixing the nanometer size particles with a carbon precursor; and (e) pyrolyzing the mixture, thereby forming a coat of conductive carbon on at least part of the surface of the particles. The particulate material can be used in fabrication of an anode in an electrochemical cell or electrochemical storage energy apparatus.

Abstract: An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.

Abstract: A substrate processing method includes a phosphoric acid processing step of supplying a phosphoric acid aqueous solution, which contains silicon and has a silicon concentration lower than a saturation concentration, to a front surface of a substrate, a liquid volume reducing step of reducing a volume of the phosphoric acid aqueous solution on the substrate, after the phosphoric acid processing step, and a rinse replacing step of supplying a rinse liquid having a temperature lower than that of the phosphoric acid aqueous solution supplied to the front surface of the substrate in the phosphoric acid processing step to the front surface of the substrate covered with the phosphoric acid aqueous solution at least partially, after the liquid volume reducing step.

Abstract: An etching method of etching a multilayered film includes etching a multilayered film by generating plasma within a processing vessel of a plasma processing apparatus. In the etching of the multilayered film, a first processing gas containing a hydrogen gas, a hydrogen bromide gas, a fluorine-containing gas, a hydrocarbon gas, a hydrofluorocarbon gas and a fluorocarbon gas is supplied from a first supply unit configured to supply a gas toward a central region of the processing target object and a second supply unit configured to supply a gas toward outer region than the central region; a second processing gas containing a hydrocarbon gas and a fluorocarbon gas is supplied from either one of the first supply unit and the second supply unit; and the first processing gas and the second processing gas are excited.

Abstract: Microneedles with sharpened tips are fabricated without any reduction to the shaft diameter below the tip. By sharpening the tip and not the entire length of the microneedle, their mechanical strength is maintained. The microneedles are fabricated out of a wafer substrate using lithography and deep reactive-ion etching (DRIE). By controlling the timing of the DRIE as the photoresist depletes, the sharpness and angle of the tips are controlled.

Abstract: An etching method for etching an object to be processed in a processing chamber including a first electrode and a second electrode disposed facing the first electrode and configured to receive the object to be processed thereon is provided that includes steps of intermittently supplying first high frequency power to either the first electrode or the second electrode while supplying second high frequency power lower than the first high frequency power to the second electrode, supplying a process gas containing hydrogen bromide HBr and oxygen O2 into the processing chamber, and etching a poly silicon film deposited on the object to be processed into a mask pattern of a silicon-containing oxide film patterned by a spacer double patterning method by plasma generated from the process gas.