Abstract: A method performed with an image sensor having a pixel array. At least one frame of a scene may be obtained using the pixel array. At least one region of interest (ROI) is identified within the frame. Subsequent frames of the scene are obtained, which involves controlling the pixel array to perform high resolution imaging with respect to the at least one ROI and low resolution imaging using analog binning with respect to remaining regions of the frames.

Abstract: An imager device includes a pixel sensor configured to receive and convert incident radiation into a pixel signal and a readout circuit configured to receive the pixel signal from the pixel sensor, generate a received signal strength indicator (RSSI) value based on the pixel signal, and generate a digital signal based on the RSSI value and the pixel signal.

Abstract: Described herein are embodiments of a mobile device case that allows a mobile device camera to view and/or capture images from multiple fields of view. The case may allow the mobile device camera to simultaneously capture image information from multiple different directions relative to the camera or mobile device. The fields of view may not be contiguous fields of view, such that there is a gap or other discontinuity between the fields of view. One field of view may be a field visible from or facing a surface of the mobile device on which the camera is disposed (e.g., the back of the mobile device) and another field of view may be one visible from or facing a different surface of the mobile device. Also described are embodiments of techniques for configuring a mobile device to capture and/or process images from multiple fields of view.

Abstract: A system for image acquisition with reduced noise using SPADs is configured to perform a plurality of sequential exposure and readout operations. Each exposure and readout operation includes (i) applying a set of shutter operations to configure each SPAD pixel of the SPAD array to enable photon detection, and (ii) for each SPAD pixel of the SPAD array, reading out a number of photons detected during the set of shutter operations. The system is also configured to generate an image based on the number of photons detected for each SPAD pixel during each of the plurality of sequential exposure and readout operations.

Abstract: A system for providing high resolution image output for pilotage and two color operation for threat detection is disclosed. The system comprises a focal plane array comprising a plurality of pixels arranged into groups of equal numbers, wherein each pixel comprises at least two detectors for receiving electromagnetic energy and a readout integrated circuit.

Abstract: A solid-state imaging element including a well improves area efficiency while reducing malfunction of a circuit on the well. The solid-state imaging element includes a first well, a second well, a first circuit, and a second circuit. The first well contains an impurity having a polarity identical to a polarity of an impurity in a substrate. The second well contains an impurity having a polarity identical to the polarity of the impurity in the substrate and is disposed adjacent to the first well. The first circuit is disposed on the first well and generates noise in a predetermined period. The second circuit is disposed on the second well and generates noise in a period different from the predetermined period.

Abstract: An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.

Abstract: A ramp signal output circuit includes a first reference current source transistor to which a current is supplied from a current source, a first line connecting a gate of the first reference current source transistor and a gate of a first current source transistor, a branch point where a second line branches from the first line, a first ramp signal generation unit connected to the first current source transistor, and a second ramp signal generation unit connected to a second current source transistor, wherein the second line is connected to a gate of the second current source transistor.

Abstract: A camera system including an imaging device that captures a first image by a normal exposure including only one exposure and that captures a second image by a multiple exposure including a plurality of exposures; and a control circuit. The the imaging device captures the second image in a first frame period, and the control circuit determines, based on the second image captured in the first frame period, whether to capture an image by the normal exposure or capture an image by the multiple exposure in a second frame period following the first frame period.

Abstract: An abnormal-pixel detecting device includes an image sensor and an image processor. The image sensor is configured to capture an image of a subject. The image processor is configured to calculate: a ratio between a first plurality of pixel values captured by the image sensor and a second plurality of pixel values whose reference position is shifted relative to the first plurality of pixel values in a main scanning direction to obtain a third plurality of pixel values; and detect an abnormal pixel in the third plurality of pixel values.

Abstract: The photoelectric conversion device includes pixels arranged in a plurality of columns, a plurality of output lines from which signals are output from the pixels, and a plurality of column circuits provided corresponding to the plurality of output lines. The column circuit includes first and second sample-and-hold circuits for holding first and second signals. The sample-and-hold circuits include first switches provided between the output line and each unit capacitor, and second switches provided between first electrodes of adjacent unit capacitors. The second electrodes of the unit capacitor of the first sample-and-hold circuit are connected to each other by a first interconnection, and the second electrodes of the unit capacitor of the second sample-and-hold circuit are connected to each other by a second interconnection. The second switches are arranged along a first direction parallel to the plurality of columns, and the first and second interconnections extend along the first direction.

Abstract: There is provided an image sensor employing an avalanche diode. The image sensor includes a plurality of pixel circuits arranged in a matrix, a plurality of pulling circuits, a plurality of output circuits and a global current source circuit. Each of the plurality of pixel circuits includes a single photon avalanche diode and a P-type or N-type select switch transistor. Each of the plurality of pulling circuits is arranged corresponding to one pixel circuit column. The global current source circuit is used to form a current mirror with each of the plurality of pulling circuits. Each of the plurality of output circuits is shared by at least two pixel circuits.

Abstract: It is an object of the present invention to provide a technique for reducing the variation of a bias voltage. An analog-to-digital converter comprises a comparator including a first amplifier and a second amplifier inputted one output of the first amplifier. The first amplifier is a differential type of amplifier, and includes one input terminal for receiving a signal and the other input terminal for receiving a reference signal which changes with a predetermined slope. The second amplifier is a single-ended type amplifier, and determines an auto zero voltage based on the amplified voltage by an auto zero operation of the first amplifier and includes a self-bias circuit using the auto zero voltage as a bias voltage. The comparator is plural, the comparators are plurality which arranged in a row direction, and outputs a digital value based on an analog voltage inputted to the other input terminal in parallel operation.

Abstract: A semiconductor apparatus includes a stack of first and second chips each having a plurality of pixel circuits arranged in a matrix form. The pixel circuit of the a-th row and the e1-th column is connected to the electric circuit of the p-th row and the v-th column. The pixel circuit of the a-th row and the f1-th column is connected to the electric circuit of the q-th row and the v-th column. The pixel circuit of the a-th row and the g1-th column is connected to the electric circuit of the r-th row and the v-th column. The pixel circuit of the a-th row and the h1-th column is connected to the electric circuit of the s-th row and the v-th column.

Abstract: The present disclosure provides an image sensor and an image collection system. The image sensor includes: a pixel collection circuitry array including a plurality of pixel collection circuitries, each pixel collection circuitry being configured to monitor a change in a light intensity in a field of view and enter a triggered state when the change in the light intensity meets a predetermined condition; a boundary triggered pixel determination array configured to determine a boundary triggered pixel collection circuitry in the pixel collection circuitries in the triggered state; and a reading unit configured to respond to the boundary triggered pixel collection circuitry and output address information about the boundary triggered pixel collection circuitry.

Abstract: The imaging device includes a pixel including a photoelectric converter, a first switch, a charge holding portion, and an output unit, an output line, a readout circuit unit connected to the output line, and a control unit. The readout circuit unit includes an amplifier circuit, a second switch between the output line and the amplifier circuit, and a comparator comparing the amplified pixel signal with a reference signal. The control unit performs outputting a pixel signal by transferring the charge in the photoelectric converter to the charge holding portion, determining a level of the pixel signal amplified by the amplifier circuit, and setting a gain of the amplifier circuit in accordance with a result of determination, and sets the second switch to off during the first switch is in on and until the output unit is settled after the first switch transitions from on to off.

Abstract: An image sensor includes first conductive patterns on a first surface of a substrate, and second conductive patterns between the first conductive patterns and the first surface, in which at least one of the first conductive patterns or the second conductive patterns includes a time constant adjustment pattern and neighboring conductive patterns, in which the time constant adjustment pattern extends in a first direction that is parallel to the first surface and the neighboring conductive patterns extend in the first direction and are most adjacent to the time constant adjustment pattern. The time constant adjustment pattern includes one or more time constant adjustment portions that protrude in a second direction that is parallel to the first surface and is perpendicular to the first direction, and the one or more time constant adjustment portions do not overlap the neighboring conductive patterns in the second direction.

Abstract: The photoelectric conversion device includes a pixel unit configured to output first and second signals from columns of first and second regions, and a processing circuit including a first processing circuit including first and third memories, a second processing circuit including second and fourth memories, and a data exchange circuit. The first memory stores the first and second signals output from the first region, and the second memory stores the first and second signals output from the second region. The data exchange circuit stores the first signals read out from the first and second memories in the third memory, and stores the second signals read out from the first and second memories in the fourth memory. The processing circuit outputs the first signals stored in the third memory from the first processing circuit, and outputs the second signals stored in the fourth memory from the second processing circuit.

Abstract: A solid state imaging element according to an embodiment includes: a converter (14) that converts an analog pixel signal read out from a pixel into a bit value, successively for each of a plurality of bits, on the basis of a threshold voltage set according to a conversion history of the bit converted before a target bit; a plurality of voltage generation units (102a and 102b) that each generate a plurality of reference voltages; and a setting unit (12d) that sets the threshold voltage using the reference voltage selected from the reference voltages generated by each of the voltage generation units on the basis of a conversion result.

Abstract: An image sensing device and an image sensing method are provided. The image sensing device includes a pixel array and a readout circuit. The pixel array includes multiple sensing sub-pixels arranged in an array. During a first exposure period of a frame period, the sensing sub-pixels are simultaneously exposed to respectively store multiple first sensing signals in multiple storage units of the sensing sub-pixels. During multiple first readout periods of the frame period, the readout circuit sequentially reads out the first sensing signals stored in the storage units during different periods. During each of multiple dynamic sensing periods of the frame period, all or part of the sensing sub-pixels are reset and then simultaneously exposed again, and the readout circuit then simultaneously reads out multiple second sensing signals of the sensing sub-pixels.